公开(公告)号：US20020126976A1

公开(公告)日：2002-09-12

申请号：US09874999

申请日：2001-06-07

Applicant: Bookham Technology plc

Inventor： Ian Edward Day

IPC: G02B006/122

CPC classification number: G02F1/025 ,  G02F2201/063 ,  G02F2201/122 ,  G02F2202/06 ,  G02F2202/105

Abstract: An electro-optic device is disclosed for altering the density of charge carriers within an integrated optical waveguide. The device includes a substrate, and an integrated optical waveguide extending across the substrate with two doped regions being provided such that an electrical signal can be applied across the doped regions to alter the density of charge carriers within the waveguide. The doped regions can each include a plurality of doped areas spaced apart from each other along the length of the waveguide.

Abstract translation: 公开了一种用于改变集成光波导内的电荷载流子密度的电光器件。 该器件包括衬底和跨越衬底延伸的集成光波导，其中提供两个掺杂区域，使得可以跨越掺杂区域施加电信号以改变波导内的电荷载流子的密度。 掺杂区域可以各自包括沿着波导的长度彼此间隔开的多个掺杂区域。

公开(公告)号：US20020122615A1

公开(公告)日：2002-09-05

申请号：US10037966

申请日：2001-12-21

Inventor： Oskar J. Painter ,  David W. Vernooy ,  Kerry J. Vahala

IPC: G02B006/26 ,  G02B006/10 ,  G02B006/28

CPC classification number: G02F1/3137 ,  B82Y20/00 ,  G02B6/10 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/132 ,  G02B6/266 ,  G02B6/30 ,  G02B2006/12097 ,  G02B2006/12128 ,  G02B2006/12142 ,  G02B2006/12145 ,  G02B2006/12147 ,  G02B2006/12159 ,  G02B2006/12176 ,  G02F1/011 ,  G02F1/0118 ,  G02F1/01708 ,  G02F1/225 ,  G02F2201/063 ,  G02F2201/307 ,  G02F2203/15

Abstract: A multi-layer laterally-confined dispersion-engineered optical waveguide may include one multi-layer reflector stack for guiding an optical mode along a surface thereof, or may include two multi-layer reflector stacks with a core therebetween for guiding an optical mode along the core. Dispersive properties of such multi-layer waveguides enable modal-index-matching between low-index optical fibers and/or waveguides and high-index integrated optical components and efficient transfer of optical signal power therebetween. Integrated optical devices incorporating such multi-layer waveguides may therefore exhibit low (

Abstract translation: 多层横向限制的色散工程光波导可以包括一个用于沿其表面引导光学模式的多层反射器叠层，或者可以包括两个多层反射器叠层，其间具有用于引导光学模式沿着 核心。 这种多层波导的分散特性使得低折射率光纤和/或波导与高折射率集成光学部件之间的模式折射率匹配和其间的光信号功率的有效传输。 因此，结合这样的多层波导的集成光学器件可能呈现低（<3dB）的插入损耗。 将有源层（电光，电吸收，非线性光学）结合到这样的波导中使得能够以相对低电压/低强度的控制信号主动地控制光学损耗和/或模态指数。 因此，结合这样的波导的集成光学器件可能表现出较低的驱动信号要求。

公开(公告)号：US5757986A

公开(公告)日：1998-05-26

申请号：US617810

申请日：1996-03-20

Applicant: Stephen James Crampton ,  Arnold Peter Roscoe Harpin ,  Andrew George Rickman

Inventor： Stephen James Crampton ,  Arnold Peter Roscoe Harpin ,  Andrew George Rickman

IPC: G02F1/015 ,  G02F1/025 ,  G02F1/313 ,  G02F1/035 ,  G02B6/10

CPC classification number: G02F1/025 ,  G02F1/3133 ,  G02F1/3138 ,  G02F2001/0152 ,  G02F2201/063 ,  G02F2202/105

Abstract: The device comprises a layer of silicon separated from a substrate by a layer of insulating material. A rib having an upper surface and two side surfaces is formed in the layer of silicon to provide a waveguide for the transmission of optical signals. A lateral doped junction is formed between the side surfaces of the rib such that an electrical signal can be applied across the junction to control the density of charge carriers across a substantial part of the cross-sectional area of the rib thereby actively altering the effective refractive index of the waveguide.

Abstract translation: PCT No.PCT / GB93 / 01983 Sec。 371日期：1996年3月20日 102（e）1996年3月20日PCT PCT 1993年9月21日PCT公布。 公开号WO95 / 08787 日期：1995年3月30日该装置包括通过一层绝缘材料与衬底分离的硅层。 在硅层中形成具有上表面和两个侧表面的肋，以提供用于传输光信号的波导。 在肋的侧表面之间形成横向掺杂结，使得电信号可以跨越结点施加，以控制跨越肋的横截面区域的大部分的电荷载流子的密度，从而主动地改变有效折射率 波导指数。

公开(公告)号：US5444802A

公开(公告)日：1995-08-22

申请号：US341929

申请日：1994-11-16

Applicant: Yasuo Shibata ,  Masahiro Ikeda

Inventor： Yasuo Shibata ,  Masahiro Ikeda

IPC: G02F1/35 ,  G02B6/00

CPC classification number: G02F1/3521 ,  G02F2201/063 ,  G02F2201/066 ,  G02F2201/30 ,  G02F2202/10

Abstract: A grating optical switch has at least one switch region for ON-OFF switch control of a signal light transmission and a signal light reflection, at least one input/output optical waveguide region for guiding the signal light to the switch, at least one coupler region for coupling the control light colinearly to the signal light and for guiding the control light to the switch region together with the signal light, and at least one separator region for separating the signal light and the control light. The switch region transmits the signal light when the control light is coupled while reflecting the signal light when the control light is not coupled.

Abstract translation: 光栅光开关具有用于信号光透射和信号光反射的ON-OFF开关控制的至少一个开关区域，用于将信号光引导至开关的至少一个输入/输出光波导区域，至少一个耦合器区域 用于将控制光共线耦合到信号光并将控制光与信号光一起引导到开关区域，以及用于分离信号光和控制光的至少一个分离器区域。 当控制光不耦合时，开关区域发射信号光，同时在控制光不耦合时反射信号光。

公开(公告)号：US4884858A

公开(公告)日：1989-12-05

申请号：US272828

申请日：1988-11-18

Applicant: Takashi Ushikubo ,  Hideaki Okayama ,  Masato Kawahara ,  Issei Asabayashi

Inventor： Takashi Ushikubo ,  Hideaki Okayama ,  Masato Kawahara ,  Issei Asabayashi

IPC: G02B6/12 ,  G02F1/025 ,  G02F1/313

CPC classification number: G02F1/3133 ,  G02F2201/063

Abstract: In an electro-optic distributed coupler switch having a parallel rib geometry, a coupling enhancement region formed of the same material as the upper cladding layers but of lower step height is located between the ribs. By increasing the electric field strength, the coupling enhancement region enables the coupling length L.sub.c to be reduced.

Abstract translation: 在具有平行肋几何形状的电光分布耦合器开关中，由与上包层相同的材料形成但具有较低台阶高度的耦合增强区域位于肋之间。 通过提高电场强度，耦合增强区域能够减小耦合长度Lc。

公开(公告)号：US20240345423A1

公开(公告)日：2024-10-17

申请号：US18624486

申请日：2024-04-02

Applicant: SUZHOU LYCORE TECHNOLOGIES CO., LTD.

Inventor： Hanxiao LIANG ,  Yipin SONG ,  Yingcong ZHOU ,  Haicang WU ,  Wenhao MAO ,  Shiwei SONG ,  Weiqi SUN ,  Qingyang YU ,  Zhouyu ZHANG

IPC: G02F1/01 ,  G02F1/21

CPC classification number: G02F1/0113 ,  G02F1/212 ,  G02F2201/063 ,  G02F2201/12

Abstract: A phase modulation module and an electro-optic modulator are provided. The phase modulation module has an input end face and an output end face and the phase modulation module comprises a substrate, an isolation layer, a waveguide layer, and an electrode layer which are arranged in sequence. The electrode layer includes a plurality of electrodes which are arranged at intervals and configured to form a modulating electric field region. The waveguide layer comprises a plate layer, a first ridge layer, and a second ridge layer which are arranged in sequence in a direction away from the substrate.

公开(公告)号：US11988906B2

公开(公告)日：2024-05-21

申请号：US17873370

申请日：2022-07-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chan-Hong Chern

IPC: G02F1/025 ,  G02B6/12 ,  G02F1/225 ,  G02F1/21

CPC classification number: G02F1/025 ,  G02B6/12 ,  G02F1/225 ,  G02B2006/12097 ,  G02B2006/12142 ,  G02F1/212 ,  G02F2201/063 ,  G02F2203/50

Abstract: An optical phase-shifting device includes a ribbed waveguide portion on an insulating layer, the waveguide portion having a p-n or p-i-n junction extending in a longitudinal direction and having a height. A pair of slab portions are disposed adjacent the waveguide portion, one on each side of the ribbed waveguide portion and on the insulation layer. The slab portion have higher doping concentrations than the respective doping concentrations in the ribbed waveguide portion. At least a portion of each slab portion has a height increasing with distance from the waveguide portion, with the slab height being smaller than that of the waveguide portion at the junction between the waveguide portion and slab portion. A pair of contact portions are formed adjacent the respective slab portion and further away from the waveguide portion. A portion of each contact portion can also have a height varying with distance from the waveguide portion.

公开(公告)号：US20230367145A1

公开(公告)日：2023-11-16

申请号：US18358820

申请日：2023-07-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Feng-Wei KUO ,  Chewn-Pu JOU ,  Huan-Neng CHEN ,  Lan-Chou CHO

IPC: G02F1/01 ,  G02F1/225

CPC classification number: G02F1/0147 ,  G02F1/2257 ,  G02F1/212 ,  G02F2201/063

Abstract: A method of forming semiconductor device includes forming an active layer in a substrate including forming components of one or more transistors; forming an MD and gate (MDG) layer over the active layer including forming a gate line; forming a metal-to-S/D (MD) contact structure; and forming a waveguide between the gate line and the MD contact structure; forming a first interconnection layer over the MDG layer including forming a first via contact structure over the gate line; forming a second via contact structure over the MD contact structure; and forming a heater between the first and second via contact structures and over the waveguide.

公开(公告)号：US11815748B2

公开(公告)日：2023-11-14

申请号：US17540782

申请日：2021-12-02

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： James Dongyoon Oh ,  Hooman Abediasl ,  Gerald Cois Byrd ,  Karlheinz Muth ,  Yi Zhang ,  Aaron John Zilkie

IPC: G02F1/01 ,  G02F1/035 ,  G02F1/295 ,  G02B6/10 ,  G02F1/025 ,  G02F1/015

CPC classification number: G02F1/025 ,  G02F1/0157 ,  G02F2201/063 ,  G02F2203/21

Abstract: An optoelectronic device, including: a rib waveguide, the rib waveguide including: a ridge portion, which includes a temperature-sensitive optically active region, and a slab portion, positioned adjacent to the ridge portion; the device further comprising a heater, disposed on top of the slab portion wherein a part of the heater closest to ridge portion is at least 2 μm away from the ridge portion. The device may also have a heater provided with a bottom cladding layer, and may also include various thermal insulation enhancing cavities.

公开(公告)号：US11796888B2

公开(公告)日：2023-10-24

申请号：US17443420

申请日：2021-07-26

Applicant: LUXTERA LLC

Inventor： Attila Mekis ,  Subal Sahni ,  Yannick De Koninck ,  Gianlorenzo Masini ,  Faezeh Gholami

IPC: G02B1/00 ,  G02F1/225 ,  G02F1/025 ,  G02F1/25 ,  G02F1/21

CPC classification number: G02F1/2257 ,  G02F1/025 ,  G02F1/212 ,  G02F2201/063 ,  G02F2201/12

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.