HEXAGONAL BORON NITRIDE POWDER, METHOD FOR PRODUCING SAME, RESIN COMPOSITION AND RESIN SHEET

    公开(公告)号:US20200148537A1

    公开(公告)日:2020-05-14

    申请号:US16473455

    申请日:2017-12-26

    Abstract: A hexagonal boron nitride powder having an average longer diameter (L) of primary particles in the hexagonal boron nitride powder of more than 10.0 μm and 30.0 μm or less, an average thickness (D) of the primary particles in the hexagonal boron nitride powder of 1.0 μm or more, a ratio of the average longer diameter (L) to the average thickness (D), [L/D], of 3.0 or more and 5.0 or less, and a content of primary particles having a ratio of a longer diameter (1) to a thickness (d), [l/d], of 3.0 or more and 5.0 or less of 25% or more, a method for producing the hexagonal boron nitride powder, and a resin composition and a resin sheet each containing the hexagonal boron nitride powder.

    Magnetic recording medium substrate and hard disk drive

    公开(公告)号:US10593359B2

    公开(公告)日:2020-03-17

    申请号:US15621319

    申请日:2017-06-13

    Abstract: A magnetic recording medium substrate is provided in which a NiP type plating film is formed on a surface of an aluminum alloy substrate that includes Si in a range of 9.5 mass % or more and 11.0 mass % or less, Mn in a rage of 0.45 mass % or more and 0.90 mass % or less, Zn in a range of 0.32 mass % or more and 0.38 mass % or less, Sr in a range of 0.01 mass % or more and 0.05 mass % or less. In the alloy structure of the aluminum alloy substrate, an average particle diameter of Si particles is 2 μm or less, the film thickness of the NiP type plating film is 7 μm or more. An outer diameter of the magnetic recording medium substrate is 53 mm or more, the thickness is 0.9 mm or less, and the Young's modulus is 79 GPa or more.

    SINGLE CRYSTAL GROWTH METHOD
    115.
    发明申请

    公开(公告)号:US20200080229A1

    公开(公告)日:2020-03-12

    申请号:US16559875

    申请日:2019-09-04

    Inventor: Yohei Fujikawa

    Abstract: The present invention provides a single crystal growth method capable of suppressing the recrystallization of the raw material gas subjected to sublimation on the surface of the raw material, and suppressing the generation of different polytypes in the crystal growing single crystal. The single crystal growth method is carried out in a crucible comprising an inner bottom for providing a raw material and a crystal mounting part facing the inner bottom. The method comprises in the following order: providing the raw material in the inner bottom; covering at least a part of a surface of the raw material with a metal carbide powder in a plan view from the crystal mounting part; and growing a single crystal disposed in the crystal mounting part by sublimating the raw material by heating.

    SiC SINGLE CRYSTAL MANUFACTURING APPARATUS
    116.
    发明申请

    公开(公告)号:US20200080227A1

    公开(公告)日:2020-03-12

    申请号:US16558643

    申请日:2019-09-03

    Inventor: Kotaro Ishita

    Abstract: The present invention provides a SiC single crystal manufacturing apparatus, including a crystal growth vessel which has a source loading portion to hold a SiC source, and a lid which is provided with a seed crystal support to hold a seed crystal; an insulating material which has at least one through-hole and covers the crystal growth vessel; a heater which is configured to heat the crystal growth vessel; and a temperature measuring instrument which is configured to measure the temperature of the crystal growth vessel through the through-hole, wherein the inner wall surface of the through-hole of the insulating material is coated with a coating material which contains a heat-resistant metal carbide or a heat-resistant metal nitride.

    CURABLE RESIN COMPOSITION, CURED PRODUCT THEREOF, AND STRUCTURE INCLUDING CURED PRODUCT THEREOF

    公开(公告)号:US20200031973A1

    公开(公告)日:2020-01-30

    申请号:US16494511

    申请日:2018-04-04

    Abstract: A curable resin composition, which has excellent flowability and reactivity at the time of molding, with which a highly reliable cured product which has excellent heat resistance can be obtained by curing is provided. A curable resin composition comprising a polyalkenyl phenol compound (A) and a polymaleimide compound (B), wherein the polyalkenyl phenol compound (A) is a compound containing at least two structural units represented by the following formula (1): where R1 and R2 each independently represent a hydrogen atom, a C1-10 alkyl group, a C1-2 alkoxy group, or a hydroxy group, Q represents a C5-10 cycloalkylene group or a divalent organic group containing an alicyclic fused ring, and Y is an alkenyl group.

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