TEMPERATURE MEASUREMENT USING SILICON WAFER REFLECTION INTERFERENCE
    118.
    发明申请
    TEMPERATURE MEASUREMENT USING SILICON WAFER REFLECTION INTERFERENCE 审中-公开
    使用硅波反射干涉的温度测量

    公开(公告)号:US20150221535A1

    公开(公告)日:2015-08-06

    申请号:US14170201

    申请日:2014-01-31

    CPC classification number: H01L21/67248 G01K11/125

    Abstract: Temperature measurement of a silicon wafer is described using the interference between reflections off surfaces of the wafer. In one example, the invention includes a silicon processing chamber, a wafer holder within the chamber to hold a silicon substrate for processing, and a laser directed to a surface of the substrate. A photodetector receives light from the laser that is reflected off the surface directly and through the substrate and a processor determines a temperature of the silicon substrate based on the received reflected light.

    Abstract translation: 使用晶片表面之间的反射之间的干涉来描述硅晶片的温度测量。 在一个示例中,本发明包括硅处理室,用于保持用于处理的硅衬底的室内的晶片保持器,以及指向衬底表面的激光。 光电检测器接收来自激光器的光,该光从该表面直接反射并通过基板,并且处理器基于所接收的反射光来确定硅基板的温度。

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