公开(公告)号：US07005193B2

公开(公告)日：2006-02-28

申请号：US10426148

申请日：2003-04-29

Applicant: Andrew C. McNeil ,  Gary Li ,  Gary J. O'Brien

Inventor： Andrew C. McNeil ,  Gary Li ,  Gary J. O'Brien

IPC: B32B15/00 ,  G01P15/02 ,  C23F1/00

CPC classification number: B81B3/0078 ,  B81B2201/025 ,  G01P15/08 ,  G01P15/0802 ,  G01P15/0888 ,  G01P2015/0814 ,  Y10T428/24917

Abstract: A proof mass (11) for a MEMS device is provided herein. The proof mass comprises a base (13) comprising a semiconductor material, and at least one appendage (15) adjoined to said base by way of a stem (21). The appendage (15) comprises a metal (17) or other such material that may be disposed on a semiconductor material (19). The metal increases the total mass of the proof mass (11) as compared to a proof mass of similar dimensions made solely from semiconductor materials, without increasing the size of the proof mass. At the same time, the attachment of the appendage (15) by way of a stem (21) prevents stresses arising from CTE differentials in the appendage from being transmitted to the base, where they could contribute to temperature errors.

Abstract translation: 本文提供了用于MEMS器件的检测质量（11）。 检测质量块包括一个包括半导体材料的基底（13）和至少一个通过杆（21）与所述底座邻接的附属物（15）。 附件（15）包括可以设置在半导体材料（19）上的金属（17）或其他这样的材料。 与仅由半导体材料制成的类似尺寸的检验质量相比，金属与总体质量（11）相比增加，而不增加检测质量。 同时，通过杆（21）附接附件（15）可防止附件中产生的CTE差异的应力传输到基座，在那里它们可能导致温度误差。

公开(公告)号：US20040126920A1

公开(公告)日：2004-07-01

申请号：US10735171

申请日：2003-12-12

Inventor： Seung Do An ,  Kyoung Soo Kim ,  Ji Man Cho

IPC: H01L021/00

CPC classification number: B81C1/00301 ,  B81B2201/025 ,  B81B2207/095 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/038 ,  G01C19/5783 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10T428/24322

Abstract: The present invention provides a micro inertia sensor and a method of manufacturing the same, the micro inertia sensor includes a lower glass substrate; a lower silicon including a first border, a first fixed point and a side movement sensing structure; an upper silicon including a second border, a second fixed point being connected to a via hole, in which a metal wiring is formed, on an upper side, and an sensing electrode, which correspond to the first border, the first fixed point and the side movement sensing structure; a bonded layer by a eutectic bonding between the upper silicon and the lower silicon; and a upper glass substrate, being positioned on an upper portion of the upper silicon, for providing the via hole on which an electric conduction wiring is formed, thereby aiming at the miniaturization of the product and the simplification of the process.

公开(公告)号：US20040119125A1

公开(公告)日：2004-06-24

申请号：US10328923

申请日：2002-12-23

Applicant: Motorola Inc.

Inventor： Bishnu Gogoi ,  Raymond M. Roop

IPC: H01L021/76 ,  H01L021/36

CPC classification number: B81C1/00476 ,  B81B2201/025 ,  B81B2203/0307 ,  B81C2201/0109 ,  Y10S438/977

Abstract: A method for creating a MEMS structure is provided. In accordance with the method, an article is provided which comprises a substrate (101) and a single crystal semiconductor layer (105), and having a sacrificial layer (103) comprising a first dielectric material which is disposed between the substrate and the semiconductor layer. An opening (107) is created which extends through the semiconductor layer (105) and the sacrificial layer (103) and which exposes a portion of the substrate (101). An anchor portion (109) comprising a second dielectric material is then formed in the opening (107). Next, the semiconductor layer (105) is epitaxially grown to a suitable device thickness, thereby forming a device layer (111).

Abstract translation: 提供了一种用于产生MEMS结构的方法。 根据该方法，提供一种包括基板（101）和单晶半导体层（105）的制品，并且具有包括设置在基板和半导体层之间的第一介电材料的牺牲层（103） 。 产生一个开口（107），其延伸穿过半导体层（105）和牺牲层（103），并露出基底（101）的一部分。 然后在开口（107）中形成包括第二电介质材料的锚定部分（109）。 接下来，将半导体层（105）外延生长至合适的器件厚度，从而形成器件层（111）。

公开(公告)号：US20040048403A1

公开(公告)日：2004-03-11

申请号：US10639289

申请日：2003-08-11

Applicant: HRL Laboratories, LLC

Inventor： Randall L. Kubena ,  David T. Chang

IPC: H01L021/00

CPC classification number: B81C3/002 ,  B81B2201/0242 ,  B81B2201/025 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/058 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0842 ,  H01H1/0036 ,  H01H59/0009

Abstract: A three axis MEM tunneling/capacitive sensor and method of making same. Cantilevered beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arranged sensors having orthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is also defined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonator structure having a mating structure thereon. Contact structures for at least two orthogonally arranged sensors are formed together with mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer. The mating structures of the first substrate are disposed in a confronting relationship with the mating structures of the second substrate or wafer. A eutectic bonding layer associated with one of the mating structures facilitates bonding between the respective mating structures. At least a portion of the first substrate or wafer is removed to release the cantilevered beam structures and the resonator structure.

公开(公告)号：US06685844B2

公开(公告)日：2004-02-03

申请号：US09782393

申请日：2001-02-14

Applicant: David Boyd Rich ,  John C. Christenson

Inventor： David Boyd Rich ,  John C. Christenson

IPC: B81C100

CPC classification number: H01L21/67069 ,  B81B2201/025 ,  B81B2203/0118 ,  B81C1/00404 ,  B81C1/00587 ,  B81C2201/0132 ,  G01P15/0802 ,  G01P15/0888 ,  G01P15/125

Abstract: A process for forming a microelectromechanical system (MEMS) device by a deep reactive ion etching (DRIE) process during which a substrate overlying a cavity is etched to form trenches that breach the cavity to delineate suspended structures. A first general feature of the process is to define suspended structures with a DRIE process, such that the dimensions desired for the suspended structures are obtained. A second general feature is the proper location of specialized features, such as stiction bumps, vulnerable to erosion caused by the DRIE process. Yet another general feature is to control the environment surrounding suspended structures delineated by DRIE in order to obtain their desired dimensions. A significant problem identified and solved by the invention is the propensity for the DRIE process to etch certain suspended features at different rates. In addition to etching wider trenches more rapidly than narrower trenches, the DRIE process erodes suspended structures more rapidly at greater distances from anchor sites of the substrate being etched. At the masking level, the greater propensity for backside and lateral erosion of certain structures away from substrate anchor sites is exploited so that, at the completion of the etch process, suspended structures have acquired their respective desired widths.

公开(公告)号：US06674141B1

公开(公告)日：2004-01-06

申请号：US09629683

申请日：2000-08-01

Applicant: Randall L. Kubena ,  David T. Chang

Inventor： Randall L. Kubena ,  David T. Chang

IPC: H01L2982

CPC classification number: B81C3/002 ,  B81B2201/0242 ,  B81B2201/025 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/058 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0842 ,  H01H1/0036 ,  H01H59/0009

Abstract: A three axis MEM tunneling/capacitive sensor and method of making same. Cantilevered beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arranged sensors having orthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is also defined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonator structure having a mating structure thereon. Contact structures for at least two orthogonally arranged sensors are formed together with mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer. The mating structures of the first substrate are disposed in a confronting relationship with the mating structures of the second substrate or wafer. A eutectic bonding layer associated with one of the mating structures facilitates bonding between the respective mating structures. At least a portion of the first substrate or wafer is removed to release the cantilevered beam structures and the resonator structure.

Abstract translation: 三轴MEM隧道/电容传感器及其制造方法。 至少两个正交布置的传感器和相关联的配合结构的悬臂梁结构被限定在第一衬底或晶片上，所述至少两个正交布置的传感器具有传感器灵敏度的正交方向。 还限定了至少第三传感器的谐振器结构，第三传感器在正交于两个正交布置的传感器的传感器灵敏度的正交方向的第三方向和在其上具有匹配结构的谐振器结构的灵敏度。 至少两个正交布置的传感器的接触结构与第二衬底或晶片上的配合结构一起形成，第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。 第一衬底的配合结构以与第二衬底或晶片的配合结构相对的关系设置。 与一个配对结构相关联的共晶粘合层便于各个配合结构之间的结合。 去除第一衬底或晶片的至少一部分以释放悬臂梁结构和谐振器结构。

公开(公告)号：US06544810B1

公开(公告)日：2003-04-08

申请号：US09652615

申请日：2000-08-31

Applicant: Daniel J. Koch ,  Paul L. Bergstrom

Inventor： Daniel J. Koch ,  Paul L. Bergstrom

IPC: H01L2100

CPC classification number: B81C1/00246 ,  B81B2201/025 ,  B81C2201/014 ,  B81C2203/0735

Abstract: A capacitively sensed micromachined component includes an electrically insulative substrate (120) having a first side (121) and a second side (122) opposite the first side. The component also includes a first layer (130) adjacent to the second side of the electrically insulative substrate where at least a first portion of the first layer located adjacent to the second side of the electrically insulative substrate is infra-red light absorbing and is also electrically conductive. The component further includes a diffusion and chemical barrier layer (240) encapsulating the first layer and the electrically insulative substrate. The component still further includes a capacitively sensed micromachined device (310) on the diffusion and chemical barrier layer.

Abstract translation: 电容感测的微加工部件包括具有第一侧（121）和与第一侧相对的第二侧（122）的电绝缘衬底（120）。 该部件还包括与电绝缘基板的第二侧相邻的第一层（130），其中位于电绝缘基板的第二侧附近的第一层的至少第一部分是红外光吸收，并且还 导电。 该组件还包括封装第一层和电绝缘衬底的扩散化学阻挡层（240）。 该部件还包括在扩散和化学阻挡层上的电容感应的微加工器件（310）。

公开(公告)号：US20020109207A1

公开(公告)日：2002-08-15

申请号：US09782393

申请日：2001-02-14

Inventor： David Boyd Rich ,  John C. Christenson

IPC: H01L027/082 ,  H01L027/102 ,  H01L029/70 ,  H01L031/11 ,  H01L029/06 ,  H01L021/302 ,  H01L021/461 ,  H01L021/00

CPC classification number: H01L21/67069 ,  B81B2201/025 ,  B81B2203/0118 ,  B81C1/00404 ,  B81C1/00587 ,  B81C2201/0132 ,  G01P15/0802 ,  G01P15/0888 ,  G01P15/125

Abstract: A process for forming a microelectromechanical system (MEMS) device by a deep reactive ion etching (DRIE) process during which a substrate overlying a cavity is etched to form trenches that breach the cavity to delineate suspended structures. A first general feature of the process is to define suspended structures with a DRIE process, such that the dimensions desired for the suspended structures are obtained. A second general feature is the proper location of specialized features, such as stiction bumps, vulnerable to erosion caused by the DRIE process. Yet another general feature is to control the environment surrounding suspended structures delineated by DRIE in order to obtain their desired dimensions. A significant problem identified and solved by the invention is the propensity for the DRIE process to etch certain suspended features at different rates. In addition to etching wider trenches more rapidly than narrower trenches, the DRIE process erodes suspended structures more rapidly at greater distances from anchor sites of the substrate being etched. At the masking level, the greater propensity for backside and lateral erosion of certain structures away from substrate anchor sites is exploited so that, at the completion of the etch process, suspended structures have acquired their respective desired widths.

Abstract translation: 用于通过深反应离子蚀刻（DRIE）工艺形成微机电系统（MEMS）器件的方法，在该方法中蚀刻覆盖空腔的衬底以形成破坏腔体以描绘悬浮结构的沟槽。 该过程的第一个一般特征是使用DRIE过程来定义悬挂结构，使得获得悬挂结构所需的尺寸。 第二个一般特征是专门功能的适当位置，例如粘性突变，易受DRIE过程引起的侵蚀。 另一个一般特征是控制由DRIE描绘的悬挂结构周围的环境，以便获得其期望的尺寸。 本发明识别和解决的一个重要问题是DRIE工艺以不同速率蚀刻某些悬挂特征的倾向。 除了比较窄的沟槽更快地蚀刻更宽的沟槽之外，DRIE工艺在距被蚀刻的衬底的锚定位置更远的距离处更快地侵蚀悬挂的结构。 在掩蔽层面，利用某些结构离开基底锚定位置的背面和侧向侵蚀的更大倾向，使得在蚀刻工艺完成时，悬挂结构已经获得了它们各自的期望宽度。

公开(公告)号：US20020051258A1

公开(公告)日：2002-05-02

申请号：US09886667

申请日：2001-06-21

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masaya Tamura

IPC: H04N001/46

CPC classification number: G01P15/125 ,  B81B7/0041 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/025 ,  B81C2203/0145 ,  G01C19/5719 ,  G01P1/02 ,  G01P15/0802 ,  G01P2015/0814

Abstract: A plane vibrator of an angular velocity sensor and a movable member of an acceleration sensor are provided in a spaced floating state on the same substrate. A lid is formed so as to cover and be spaced from the upper side of the plane vibrator and the movable member. A space defined by the substrate and the lid is sectioned into a angular velocity sensor space and an acceleration sensor space by use of a sectioning wall. The angular velocity sensor space is hermetically sealed to be in the vacuum state. The acceleration sensor space is hermetically sealed to be under atmospheric pressure. The plane vibrator is vibrated at a high frequency and a large amplitude so that the angular velocity detection sensitivity is enhanced. The movable member, even if vibration of the plane vibrator is transmitted thereto, is prevented from vibrating at a high frequency and a large amplitude, due to the damping effect of air. Thus, the acceleration detection sensitivity is enhanced.

Abstract translation: 角速度传感器的平面振动器和加速度传感器的可移动部件在相同的基板上以间隔的浮动状态设置。 盖子被形成为覆盖并与平面振动器和可动构件的上侧隔开。 由基板和盖子限定的空间通过使用分段壁分成角速度传感器空间和加速度传感器空间。 角速度传感器空间被密封以处于真空状态。 加速度传感器空间密封在大气压下。 平面振动器以高频和大振幅振动，从而增强角速度检测灵敏度。 由于空气的阻尼作用，即使是平面振动体的振动传递到可动构件也能够以高的频率和大的幅度振动。 因此，提高了加速度检测灵敏度。

公开(公告)号：US20230382713A1

公开(公告)日：2023-11-30

申请号：US17826181

申请日：2022-05-27

Applicant: Vanguard International Semiconductor Corporation

Inventor： RAMACHANDRAMURTHY PRADEEP YELEHANKA ,  RAKESH CHAND ,  HUP FONG TAN ,  ROHIT PULIKKAL KIZHAKKEYIL ,  WAI MUN CHONG

IPC: B81B3/00 ,  B81C3/00

CPC classification number: B81B3/0021 ,  B81C3/001 ,  B81C2203/0792 ,  B81B2201/025 ,  B81C2203/038

Abstract: A micro-electro-mechanical system (MEMS) device includes a first substrate, an interconnect layer, a MEMS device layer, a stopper and a second substrate. The interconnect layer is disposed on the first substrate and includes a plurality of conductive layers and a plurality of dielectric layer stacked alternately. The MEMS device layer is bonded on the interconnect layer and includes a proof mass. The stopper is disposed directly under the proof mass and spaced apart from the proof mass, where the stopper is surrounded by a portion of the interconnect layer, and the stopper includes a bottom portion constructed of one of the plurality of conductive layers, and a silicon-based layer disposed on the bottom portion. The second substrate includes a cavity and is bonded on the MEMS device layer.