公开(公告)号：US09892914B2

公开(公告)日：2018-02-13

申请号：US14918310

申请日：2015-10-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tsung-Han Ko ,  Ching-Yu Chang ,  Kuan-Hsin Lo

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/02

CPC classification number: H01L21/0271 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/02315 ,  H01L21/02318 ,  H01L21/02356 ,  H01L21/31138

Abstract: Disclosed is a method of forming a semiconductor device using a self-assembly (DSA) patterning process. The method includes forming a patterned feature over a substrate; applying an orientation material that includes a first polymer and a second polymer over the substrate, wherein the first polymer has a first activation energy and the second polymer has a second activation energy; baking the substrate at first temperature thereby forming a first orientation layer that includes the first polymer; baking the substrate at second temperature thereby forming a second orientation layer that includes the second polymer; and performing a directed self-assembly (DSA) process over the first and the second orientation layers.

公开(公告)号：US20180033638A1

公开(公告)日：2018-02-01

申请号：US15547688

申请日：2016-02-02

Applicant: LG Chem, Ltd.

Inventor： Se Jin Ku ,  Eun Young Choi ,  Sung Soo Yoon ,  No Jin Park ,  Jung Keun Kim ,  Je Gwon Lee ,  Mi Sook Lee

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31133 ,  B81C1/00087 ,  B81C2201/0149 ,  H01L21/02118 ,  H01L21/02356 ,  H01L21/0271 ,  H01L21/30655 ,  H01L21/31055 ,  H01L21/67

Abstract: The present invention relates to a process for selectively removing a block on one side using a wet etching process in connection with self-assembly block copolymer thin films that have etching-resisting properties different from each other. The present invention can form a vertical nanopore structure having a high aspect ratio, even in the case of a thick film which has a vertically oriented cylinder self-assembly structure and which has one or more periods, by overcoming the limit of the prior art, which cannot implement a vertical pore structure through wet etching.

公开(公告)号：US20170307976A1

公开(公告)日：2017-10-26

申请号：US15517505

申请日：2014-11-18

Applicant: Seagate Technology LLC

Inventor： XiaoMin YANG ,  Shuaigang XIAO ,  Kim Y. LEE ,  David S. KUO

IPC: G03F7/11 ,  G03F7/20 ,  G03F7/09

CPC classification number: G03F7/11 ,  B81C1/00031 ,  B81C2201/0149 ,  C08L53/00 ,  G03F7/0002 ,  G03F7/094 ,  G03F7/165 ,  G03F7/168 ,  G03F7/40 ,  G03F7/70 ,  H01L21/0274

Abstract: Provided herein is a method, including creating a first layer over a substrate, wherein the first layer is configured for directed self-assembly of a block copolymer thereover; creating a continuous second layer over the first layer by directed self-assembly of a block copolymer, wherein the second layer is also configured for directed self-assembly of a block copolymer thereover; and creating a third layer over the continuous second layer by directed self-assembly of a block copolymer. Also provided is an apparatus, comprising a continuous first layer comprising a thin film of a first, phase-separated block copolymer, wherein the first layer comprises a first chemoepitaxial template configured for directed self-assembly of a block copolymer thereon; and a second layer on the first layer, wherein the second layer comprises a thin film of a second, phase-separated block copolymer.

公开(公告)号：US09684235B2

公开(公告)日：2017-06-20

申请号：US14272587

申请日：2014-05-08

Applicant: JSR CORPORATION

Inventor： Yuji Namie ,  Shinya Minegishi ,  Tomoki Nagai ,  Takuo Sone

IPC: C08L53/00 ,  C08F297/00 ,  G03F7/00 ,  H01L21/033 ,  H01L21/308 ,  H01L21/3213 ,  B81C1/00 ,  C08F297/02

CPC classification number: C08F297/026 ,  B81C1/00031 ,  B81C2201/0149 ,  C08L53/005 ,  G03F7/0002 ,  G03F7/0035 ,  G03F7/70 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139

Abstract: A directed self-assembling composition for pattern formation includes a block copolymer. The block copolymer includes a polystyrene block having a styrene unit, and a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit. The block copolymer has a group that is bound to at least one end of a main chain of the block copolymer and that includes a hetero atom.

公开(公告)号：US09666443B2

公开(公告)日：2017-05-30

申请号：US14769426

申请日：2014-02-26

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Emiel Peeters

IPC: H01L21/31 ,  H01L21/3105 ,  B81C1/00 ,  H01L21/027 ,  H01L21/033 ,  G03F7/00 ,  H01L21/768

CPC classification number: H01L21/31058 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/76802

Abstract: Causing a self-assemblable block copolymer (BCP) having first and second blocks to migrate from a region surrounding a lithography recess of the substrate and a dummy recess on the substrate to within the lithography recess and the dummy recess, causing the BCP to self-assemble into an ordered layer within the lithography recess, the layer having a first block domain and a second block domain, and selectively removing the first domain to form a lithography feature having the second domain within the lithography recess, wherein a width of the dummy recess is smaller than the minimum width required by the BCP to self-assemble, the dummy recess is within the region of the substrate surrounding the lithography recess from which the BCP is caused to migrate, and the width between portions of a side-wall of the lithography recess is greater than the width between portions of a side-wall of the dummy recess.

公开(公告)号：US20170139326A1

公开(公告)日：2017-05-18

申请号：US15409125

申请日：2017-01-18

Applicant: Board of Regents The University of Texas System

Inventor： C. Grant Willson ,  Christopher Ellison ,  Michael Maher ,  Christopher Bates ,  Dustin Janes

IPC: G03F7/20 ,  G03F7/16 ,  C09D153/00 ,  G03F7/11

CPC classification number: G03F7/20 ,  B81C1/00031 ,  B81C2201/0149 ,  C09D153/00 ,  C09D153/005 ,  G03F7/0002 ,  G03F7/11 ,  G03F7/16

Abstract: A method for ordering block copolymers including forming a first layer having a first preference mode; and providing a reactive agent in selected regions of the first layer that modifies the selected regions to a second preference mode, wherein the selected regions define other regions of the first layer retaining the first preference mode thereby forming an alignment layer for block copolymers.

公开(公告)号：US09613801B2

公开(公告)日：2017-04-04

申请号：US14858568

申请日：2015-09-18

Applicant: Tokyo Electron Limited

Inventor： Michael A. Carcasi ,  Mark H. Somervell ,  Benjamen M. Rathsack

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  B81C1/00 ,  G03F7/00 ,  H01L21/268 ,  H01L21/28 ,  H01L21/66

CPC classification number: H01L21/02345 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/268 ,  H01L21/28123 ,  H01L22/12 ,  H01L22/20

Abstract: A method of patterning a layered substrate is provided that includes forming a layer of a block copolymer on a substrate, annealing the layer of the block copolymer to affect microphase segregation such that self-assembled domains are formed, and annealing the layer of the block copolymer a second time to refine or modify the microphase segregation, where one of the annealing steps uses an absorption based heating method.

公开(公告)号：US20170091369A1

公开(公告)日：2017-03-30

申请号：US15377472

申请日：2016-12-13

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiroki YONEMITSU

IPC: G06F17/50 ,  G03F7/40

CPC classification number: G06F17/5072 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y40/00 ,  G03F7/00 ,  G03F7/0002 ,  G03F7/38 ,  G03F7/40

Abstract: According to one embodiment, a guide pattern data correcting method is for correcting guide pattern data of a physical guide for formation of a polymer material to be microphase-separated. The physical guide has a plurality of concave portions in the guide pattern data, and at least two concave portions out of the plurality of concave portions are connected to each other. The guide pattern data is subjected to correction by shifting or rotation of at least either of the two connected concave portions.

公开(公告)号：US20170073542A1

公开(公告)日：2017-03-16

申请号：US15256990

申请日：2016-09-06

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yuriko SEINO ,  Naoko Kihara

IPC: C09D153/00 ,  C08J7/12 ,  C09D133/12 ,  C09D183/10

CPC classification number: G03F7/165 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  B82Y40/00 ,  C08G77/44 ,  C09D133/12 ,  C09D153/00 ,  C09D183/10 ,  G03F7/0002 ,  G03F7/002 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/40 ,  H01L21/02118 ,  H01L21/0275 ,  H01L21/30604 ,  H01L21/31138 ,  H01L21/31144

Abstract: A self-organization material according to an embodiment includes a block copolymer and a top coat material. The block copolymer contains a first block and a second block. The second block has a surface free energy higher than that of the first block. The top coat material contains a first portion having a surface free energy higher than that of the first block and lower than that of the second block, and a second portion having a surface free energy lower than that of the first block. The first portion is one of a homopolymer miscible with both the first block and the second block, and a random copolymer having a repeating unit of the first block and a repeating unit of the second block. The second portion is one of an organic siloxane-containing polymer and a fluorine-containing polymer.

Abstract translation: 根据实施方案的自组织材料包括嵌段共聚物和顶涂层材料。 嵌段共聚物含有第一嵌段和第二嵌段。 第二块具有比第一块高的表面自由能。 顶涂层材料包含第一部分，其表面自由能高于第一块的表面自由能，并且低于第二块的表面自由能，并且第二部分具有比第一块低的表面自由能。 第一部分是与第一嵌段和第二嵌段都可混合的均聚物之一，以及具有第一嵌段的重复单元和第二嵌段的重复单元的无规共聚物之一。 第二部分是含有机硅氧烷的聚合物和含氟聚合物之一。

公开(公告)号：US09581899B2

公开(公告)日：2017-02-28

申请号：US13686058

申请日：2012-11-27

Applicant: International Business Machines Corporation

Inventor： Michael A. Guillorn ,  Kafai Lai ,  Jed W. Pitera ,  Hsinyu Tsai

IPC: G03F7/40 ,  G03F7/00 ,  H01L21/033 ,  H01L21/311 ,  B81C1/00 ,  H01L21/768 ,  B81B7/00 ,  G03F7/16

CPC classification number: G03F7/0002 ,  B81B7/0006 ,  B81B2203/0353 ,  B81B2207/07 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F7/0035 ,  G03F7/165 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144

Abstract: After formation of a template layer over a neutral polymer layer, a self-assembling block copolymer material is applied and self-assembled. The template layer includes a first linear portion, a second linear portion that is shorter than the first linear portion, and blocking template structures having a greater width than the second linear portion. The self-assembling block copolymer material is phase-separated into alternating lamellae in regions away from the widthwise-extending portion. The blocking template structures perturb, and cause termination of, the lamellae. A cavity parallel to the first and second linear portions and terminating in self-alignment to the blocking template structures is formed upon selective removal of a polymeric block component. The pattern of the cavity can be inverted and transferred into the material layer to form fins having different lengths.

Abstract translation: 在中性聚合物层上形成模板层之后，自组装嵌段共聚物材料被应用并自组装。 模板层包括第一直线部分，比第一直线部分短的第二直线部分，以及阻挡具有比第二直线部分更大的宽度的模板结构。 自组装嵌段共聚物材料在远离宽度方向延伸部分的区域中相分离成交替的薄片。 阻挡模板结构扰乱并导致薄片的终止。 在选择性去除聚合物嵌段组分时，形成平行于第一和第二直线部分并终止于与阻挡模板结构自对准的空腔。 空腔的图案可以反转并转移到材料层中以形成具有不同长度的翅片。