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    ELECTRODE FOR GENERATING PLASMA AND PLASMA PROCESSING APPARATUS USING SAME
    111.
    发明申请
    ELECTRODE FOR GENERATING PLASMA AND PLASMA PROCESSING APPARATUS USING SAME 有权
    用于生成等离子体和等离子体处理装置的电极

    公开(公告)号：US20070170156A1

    公开(公告)日：2007-07-26

    申请号：US11565179

    申请日：2006-11-30

    Applicant: Daisuke HAYASHI

    Inventor： Daisuke HAYASHI

    IPC: B23K9/00

    CPC classification number: H01J37/32559 ,  H01J37/32009 ,  H01J2237/2001

    Abstract: In an electrode for generating a plasma, disposed to face a surface of a substrate to perform a plasma processing on the surface of the substrate, the electrode includes a metal-based composite material formed by impregnating a metal into a base member made of a porous ceramic, and having a joint surface at least facing toward the entire surface of the substrate. The electrode also includes a conductive plate made of a plasma-resistant material melt-bonded by a metal to the joint surface of the metal-based composite material.

    Abstract translation: 在用于产生等离子体的电极中，设置成面对衬底的表面以在衬底的表面上执行等离子体处理，所述电极包括通过将金属浸渍到由多孔的基底构成的基底构件中形成的金属基复合材料 陶瓷，并且具有至少面向基板的整个表面的接合表面。 电极还包括由金属熔融粘合到金属基复合材料的接合表面的等离子体材料制成的导电板。

    Method of using an adhesive for temperature control during plasma processing
    112.
    发明授权
    Method of using an adhesive for temperature control during plasma processing 失效
    在等离子体处理中使用粘合剂进行温度控制的方法

    公开(公告)号：US07232591B2

    公开(公告)日：2007-06-19

    申请号：US10408261

    申请日：2003-04-08

    Applicant: Tomohiro Okumura ,  Toshinari Nitta

    Inventor： Tomohiro Okumura ,  Toshinari Nitta

    IPC: H05H1/24 ,  H01L21/306 ,  C23C16/00

    CPC classification number: H01L21/68721 ,  C03C17/23 ,  C03C19/00 ,  C03C2217/213 ,  C03C2218/153 ,  C03C2218/328 ,  H01J37/321 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67132 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68785

    Abstract: Provided is a plasma processing method and apparatus and a tray for plasma processing, which are able to improve temperature controllability of a substrate. If a vacuum chamber is evacuated by a pump while introducing a specified gas by a gas supply unit into the vacuum chamber and a high-frequency power is applied by a coil use high-frequency power supply to a coil while maintaining an interior of the vacuum chamber at a specified pressure, then plasma is generated in the vacuum chamber, and a substrate placed on a substrate electrode can be subjected to plasma processing. At this time, by providing an adhesive sheet between the substrate electrode and the substrate, temperature controllability of the substrate can be improved.

    Abstract translation: 提供了能够提高基板的温度可控性的等离子体处理方法和等离子体处理装置和托盘。 如果真空室被泵抽气，同时通过气体供应单元将特定气体引入真空室，并且通过线圈将高频电力施加到线圈上，同时保持真空内部 在真空室中产生等离子体，并且可以对放置在基板电极上的基板进行等离子体处理。 此时，通过在基板电极和基板之间设置粘合片，能够提高基板的温度控制性。

    Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control
    114.
    发明申请
    Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control 审中-公开
    使用多区域前馈热控制在等离子体反应器中处理工件的方法

    公开(公告)号：US20070091540A1

    公开(公告)日：2007-04-26

    申请号：US11409184

    申请日：2006-04-21

    Applicant: Paul Brillhart ,  Richard Fovell ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

    Inventor： Paul Brillhart ,  Richard Fovell ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

    IPC: H01T23/00

    CPC classification number: H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

    Abstract: A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes inner and outer zone evaporators inside respective inner and outer zones of the electrostatic chuck, while pressurizing inner and outer zones of a workpiece-to-chuck interface with a thermally conductive gas, and sensing conditions in the chamber including inner and outer zone temperatures near the workpiece. The method further includes obtaining the next scheduled change in RF heat load on the workpiece and using thermal modeling to estimate respective changes in thermal conditions of the coolant in the inner and outer zone evaporators, respectively, that would hold temperatures measured in the inner and outer electrostatic chuck zones, respectively, nearly constant by compensating for the next scheduled change in RF heat load, and making the respective changes in thermal conditions of the coolant in inner and outer zone evaporators prior to the time of the next scheduled change by a head start related to the thermal propagation delay through the electrostatic chuck.

    Abstract translation: 一种在等离子体反应器中处理工件的方法，所述等离子体反应器具有用于在反应室内支撑工件的静电卡盘，所述方法包括使冷却剂循环通过制冷回路，所述制冷回路在静电吸盘的内部和外部区域内包括内部和外部区域蒸发器 同时用导热气体对工件 - 卡盘界面的内部和外部区域加压，以及感测室中包括工件附近的内部和外部区域温度的条件。 该方法还包括获得工件上的RF热负荷的下一个预定的改变，并且使用热模型来分别估计在内部和外部区域蒸发器中的冷却剂的热条件的各自变化，其将保持在内部和外部测量的温度 通过补偿下一个预定的RF热负荷变化，分别使静电吸盘区域几乎恒定，并且在下一次预定的改变时间之前通过头部开始使得内部和外部区域蒸发器中的冷却剂的热条件的各自变化 与通过静电卡盘的热传播延迟有关。

    Plasma reactor with a multiple zone thermal control feed forward control apparatus
    118.
    发明申请
    Plasma reactor with a multiple zone thermal control feed forward control apparatus 有权
    具有多区域热控制前馈控制装置的等离子体反应器

    公开(公告)号：US20070089834A1

    公开(公告)日：2007-04-26

    申请号：US11408559

    申请日：2006-04-21

    Applicant: Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

    Inventor： Paul Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

    IPC: C23F1/00 ,  C23C16/00

    CPC classification number: H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

    Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and outer expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.

    Abstract translation: 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域 每当工件保持在表面上时形成的工件表面界面，以及静电卡盘的内部和外部区域内的内部和外部蒸发器，以及具有各自的内部和外部膨胀阀的制冷回路，用于控制冷却剂通过内部 和外部蒸发器。 反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和 外部温度传感器。 耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度 传感器分别更接近所需的温度。

    Lateral temperature equalizing system for large area surfaces during processing
    119.
    发明授权
    Lateral temperature equalizing system for large area surfaces during processing 有权
    加工过程中大面积表面横向温度均衡系统

    公开(公告)号：US07195693B2

    公开(公告)日：2007-03-27

    申请号：US10455491

    申请日：2003-06-04

    Applicant: Kenneth W. Cowans

    Inventor： Kenneth W. Cowans

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC classification number: H01L21/67109 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/32

    Abstract: In many processes used in fabricating semiconductors the wafer is seated on the top surface of a pedestal and heated in a high energy process step, such as plasma etching. The pedestal, chuck or platen may be cooling but the wafer gradually heats until the process can no longer continue. Where large, e.g. 300 mm diameter, wafers are being processed the temperature level across the wafer is difficult to maintain substantially constant. In this system and method the lateral temperature distribution is equalized by a heat sink structure in a chamber immediately under the wafer support on top of the pedestal. A number of spatially distributed wicking posts extend downwardly from a layer of wicking material across the top of the chamber, into a pool of a vaporizable liquid. At hot spots, vaporized liquid is generated and transported to adjacent condensation posts extending up from the liquid. The system thus passively extracts heat to equalize temperatures while recirculating liquid and assuring adequate supply. The free volume above and within the liquid, and the short distances between posts, assure adequate heat transfer rates.

    Abstract translation: 在用于制造半导体的许多工艺中，晶片位于基座的顶表面上，并在诸如等离子体蚀刻的高能量工艺步骤中加热。 基座，卡盘或压板可能会冷却，但晶片会逐渐加热，直到该过程不再继续。 哪里大，例如 直径为300毫米的晶圆正在被处理，晶圆上的温度水平难以保持基本恒定。 在该系统和方法中，横向温度分布由在基座顶部的晶片支撑件正下方的腔室中的散热器结构相等。 许多空间分布的吸液柱从芯吸层材料层向下延伸穿过室的顶部，进入可蒸发液体的池中。 在热点处，产生蒸发的液体并将其输送到从液体向上延伸的相邻冷凝柱。 因此，该系统被动地提取热量以平衡温度同时再循环液体并确保足够的供应。 液体内部和内部的自由体积以及柱之间的短距离保证了足够的传热速率。

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