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    Low dielectric substrate for high-speed millimeter-wave communication
    111.
    发明授权
    Low dielectric substrate for high-speed millimeter-wave communication 有权

    公开(公告)号：US12035461B2

    公开(公告)日：2024-07-09

    申请号：US18118915

    申请日：2023-03-08

    Applicant: SHIN-ETSU CHEMICAL CO., LTD.

    Inventor： Toshio Shiobara ,  Yusuke Taguchi ,  Ryunosuke Nomura

    IPC: H05K1/02 ,  H05K1/03

    CPC classification number: H05K1/024 ,  H05K1/0248 ,  H05K1/0306 ,  H05K2201/015 ,  H05K2201/0175 ,  H05K2201/0195 ,  H05K2201/0209

    Abstract: A low dielectric substrate for high-speed millimeter-wave communication includes a quartz glass cloth with a dielectric loss tangent of 0.0001 to 0.0015 and a dielectric constant of 3.0 to 3.8 at 10 GHz, and an organic resin with a dielectric loss tangent within 80% to 150% of the dielectric loss tangent of the quartz glass cloth at 10 GHz and a dielectric constant within 50% to 110% of the dielectric constant of the quartz glass cloth at 10 GHz. This provides a low dielectric substrate for high-speed millimeter-wave communication where the low dielectric substrate makes it possible to send signals that are stable and have excellent quality with no difference in propagation time between wirings even if the substrate has an uneven resin distribution and the quartz glass cloth above and below the wirings, and the difference in dielectric loss tangent between members has been reduced to lower transmission loss.

    WIRING SUBSTRATE AND PROCESS FOR PRODUCING IT
    118.
    发明申请
    WIRING SUBSTRATE AND PROCESS FOR PRODUCING IT 审中-公开

    公开(公告)号：US20190141833A1

    公开(公告)日：2019-05-09

    申请号：US16238586

    申请日：2019-01-03

    Applicant: AGC Inc.

    Inventor： Tomoya HOSODA ,  Tatsuya TERADA

    IPC: H05K1/03 ,  H05K1/02 ,  H05K1/11 ,  H05K3/42

    CPC classification number: H05K1/0373 ,  H01P3/00 ,  H01Q1/38 ,  H05K1/024 ,  H05K1/0393 ,  H05K1/115 ,  H05K3/422 ,  H05K3/427 ,  H05K2201/015 ,  H05K2201/0154 ,  H05K2201/0212 ,  H05K2203/072 ,  H05K2203/0776 ,  H05K2203/0779 ,  H05K2203/095

    Abstract: To provide a wiring substrate having excellent transmission characteristics, of which initial failure of a plating layer formed on an inner wall surface of a hole is suppressed regardless of the type of the pre-treatment applied to the inner wall surface of the hole, and of which the plating layer has favorable heat resistance, and a process for producing it.A wiring substrate 10 comprising an electrical insulator layer 20, a first conductor layer 32 formed on a first surface of the electrical insulator layer 20, a second conductor layer 34 formed on a second surface of the electrical insulator layer 20, and a plating layer 42 provided on an inner wall surface of a hole 40 which opens from the first conductor layer 32 through the second conductor layer 34; wherein the electrical insulator layer 20 has a heat resistant resin layer 22 containing a heat resistant resin and a resin powder; the resin powder is formed from a resin material containing a melt-formable fluororesin having a functional group such as a carbonyl group-containing group; the content of the resin powder is from 5 to 70 mass % to the heat resistant resin layer 22; and the electrical insulator layer 20 has a dielectric constant of from 2.0 to 3.5.

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