公开(公告)号：US20150309818A1

公开(公告)日：2015-10-29

申请号：US14333764

申请日：2014-07-17

Applicant: NATIONAL APPLIED RESEARCH LABORATORIES

Inventor： HUI-LAN LEE ,  TE-LUNG LIU ,  JEN-WEI HU ,  MING CHEN

IPC: G06F9/455

CPC classification number: G06F9/45533 ,  G06F9/45558 ,  G06F2009/4557 ,  H04L49/70

Abstract: The present invention relates to a method of virtual machine migration, which uses the protocol of the software defined networking technology. When a virtual machine is migrated across domains, the local controller will be notified rapidly for submitting the information of the virtual machine to the switch in advance. Thereby, without modifying the network configuration, the migrated virtual machine can provide service continuously; the optimal routing is achieved and thus improving the problem of triangle routing effectively.

Abstract translation: 本发明涉及一种使用软件定义的网络技术协议的虚拟机迁移方法。 当虚拟机跨域迁移时，将快速通知本地控制器，提前将虚拟机的信息提交给交换机。 因此，在不修改网络配置的情况下，迁移的虚拟机可以连续提供服务; 实现最优路由，从而有效改善三角路由问题。

公开(公告)号：US09105481B2

公开(公告)日：2015-08-11

申请号：US14010713

申请日：2013-08-27

Applicant: National Applied Research Laboratories

Inventor： Chee-Wee Liu ,  Yen-Ting Chen

IPC: H01L29/04 ,  H01L29/165 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06 ,  H01L21/84 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/045 ,  H01L21/84 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, at least a first N-type germanium (Ge) structure and at least a first P-type Ge structure. The first N-type Ge structure is formed on the substrate and has two end parts and at least a first central part bonded between the two end parts thereof. The first central part is floated over the substrate, and a side surface of the first central part is a {111} Ge crystallographic surface. The first P-type Ge structure is formed on the substrate and has two end parts and at least a second central part bonded between the two end parts thereof. The side surface of the second central part is a {110} Ge crystallographic surface.

Abstract translation: 提供半导体结构。 半导体结构包括至少第一N型锗（Ge）结构和至少第一P型Ge结构的衬底。 第一N型Ge结构形成在基板上，并且具有两个端部和至少一个结合在其两个端部之间的第一中心部分。 第一中心部分浮在基板上，第一中心部分的侧表面是{111} Ge晶体表面。 第一P型Ge结构形成在基板上，并且具有两个端部和至少两个结合在其两个端部之间的第二中心部分。 第二中心部分的侧表面是{110} Ge晶体表面。

公开(公告)号：US09040333B2

公开(公告)日：2015-05-26

申请号：US14075472

申请日：2013-11-08

Applicant: NATIONAL APPLIED RESEARCH LABORATORIES

Inventor： Jia-Min Shieh ,  Chang-Hong Shen ,  Wen-Hsien Huang ,  Bau-Tong Dai ,  Jung Y. Huang ,  Hao-Chung Kuo

IPC: H01L31/062 ,  H01L27/142

CPC classification number: H01L27/142 ,  H01L31/03926 ,  H01L31/075 ,  H01L31/18 ,  Y02E10/548

Abstract: The invention discloses a method for fabricating power-generating module with solar cell. The method includes the steps of providing a flexible substrate; forming a solar cell unit on the flexible substrate by using a high density plasma at a temperature lower than about 150° C.; and forming a circuit unit on the flexible substrate; wherein the solar cell unit is coupled to the circuit unit, so as to provide the power needed for the operation of the circuit unit.

Abstract translation: 本发明公开了一种用于制造具有太阳能电池的发电模块的方法。 该方法包括提供柔性基板的步骤; 通过使用低于约150℃的高密度等离子体在柔性基板上形成太阳能电池单元; 以及在所述柔性基板上形成电路单元; 其中所述太阳能电池单元耦合到所述电路单元，以便提供所述电路单元的操作所需的功率。

公开(公告)号：US08975674B2

公开(公告)日：2015-03-10

申请号：US13672971

申请日：2012-11-09

Applicant: National Applied Research Laboratories

Inventor： Chun-Lin Chu ,  Shu-Han Hsu ,  Guang-Li Luo ,  Chee-Wee Liu

IPC: H01L27/088 ,  H01L29/12 ,  H01L29/267 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/32 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  H01L29/32 ,  H01L29/42392 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A bridge structure for use in a semiconductor device includes a semiconductor substrate and a semiconductor structure layer. The semiconductor structure layer is formed on a surface of the semiconductor substrate and a lattice difference is formed between the semiconductor structure layer and the semiconductor substrate. The semiconductor structure layer includes at least a first block, at least a second block and at least a third block, wherein the first block and the third block are bonded on the surface of the semiconductor substrate, the second block is floated over the semiconductor substrate and connected with the first block and the third block.

Abstract translation: 用于半导体器件的桥结构包括半导体衬底和半导体结构层。 半导体结构层形成在半导体衬底的表面上，并且在半导体结构层和半导体衬底之间形成晶格差。 半导体结构层至少包括第一块，至少第二块和至少第三块，其中第一块和第三块结合在半导体衬底的表面上，第二块浮在半导体衬底上 并与第一块和第三块连接。

公开(公告)号：US08963569B2

公开(公告)日：2015-02-24

申请号：US13921973

申请日：2013-06-19

Applicant: National Applied Research Laboratories

Inventor： Yin-Cheng Chang ,  Da-Chiang Chang

IPC: G01R31/00 ,  G01R1/067

CPC classification number: G01R1/06761 ,  G01R1/06772 ,  G01R31/002 ,  G01R31/2886

Abstract: The present invention discloses a semiconductor chip probe for measuring conducted electromagnetic emission (EME) of a bare die and a conducted EME measurement apparatus with the semiconductor chip probe. The semiconductor chip probe comprises a substrate, a dielectric layer, an impedance unit, a measuring unit and a connection unit. The measurement apparatus comprises a semiconductor chip probe, a high frequency probe, a signal cable and a test receiver. The integrated passive component network designed and embedded inside the semiconductor chip probe forms the 1Ω or 150Ω impedance network. And the semiconductor chip probe is able to directly couple the EME conducted current or voltage from the test pin of the flipped chip under test to the test receiver for measurement.

Abstract translation: 本发明公开了一种用于测量裸片的传导电磁发射（EME）和带有半导体芯片探针的传导式EME测量装置的半导体芯片探针。 半导体芯片探针包括衬底，电介质层，阻抗单元，测量单元和连接单元。 测量装置包括半导体芯片探针，高频探针，信号电缆和测试接收器。 半导体芯片探针内部设计和嵌入的集成无源元件网络形成1＆OHgr; 或150＆OHgr; 阻抗网络。 并且半导体芯片探针能够将EME传导电流或电压从测试的被翻转芯片的测试引脚耦合到测试接收器进行测量。

公开(公告)号：US20140374834A1

公开(公告)日：2014-12-25

申请号：US13922354

申请日：2013-06-20

Applicant: National Applied Research Laboratories

Inventor： Guang-Li Luo ,  Chee-Wee Liu ,  Shu-Han Hsu ,  Chun-Lin Chu ,  Chih-Hung Lo

IPC: H01L27/092

CPC classification number: H01L27/0924 ,  H01L21/02381 ,  H01L21/02532 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/785 ,  Y10T428/12528

Abstract: A germanium (Ge) structure includes a substrate, a Ge layer and at least a Ge spatial structure. The Ge layer is formed on the substrate, and a surface of the Ge layer is a Ge {110} lattice plane. The Ge spatial structure is formed in the Ge layer and includes a top surface and a sidewall surface, wherein the top surface is a Ge {110} lattice plane and the sidewall surface is perpendicular to the top surface. An axis is formed at a junction of the sidewall surface and the top surface, and an extensive direction of the axis is parallel to a Ge [112] lattice vector on the surface of the Ge layer, therefore the sidewall surface is a Ge {111} lattice plane. Because Ge {111} surface channels have very high electron mobility, this Ge spatial structure may be applied for fabricating high-performance Ge semiconductor devices.

Abstract translation: 锗（Ge）结构包括基底，Ge层和至少Ge空间结构。 Ge层形成在基板上，Ge层的表面是Ge {110}晶格面。 Ge空间结构形成在Ge层中并且包括顶表面和侧壁表面，其中顶表面是Ge {110}晶格平面，并且侧壁表面垂直于顶表面。 在侧壁表面和顶表面的接合处形成轴线，并且轴的宽大方向平行于Ge层表面上的Ge [112]晶格矢量，因此侧壁表面是Ge {111 }晶格面。 由于Ge {111}表面通道具有非常高的电子迁移率，所以该Ge空间结构可用于制造高性能Ge半导体器件。

公开(公告)号：US20140352276A1

公开(公告)日：2014-12-04

申请号：US14070881

申请日：2013-11-04

Applicant: National Chiao Tung University ,  National Applied Research Laboratories

Inventor： Yen-Sen Chen ,  Men-Zen Wu ,  Jong-Shinn Wu ,  Alfred Lai ,  Jhe-Wei Lin ,  Tzu-Hao Chou

IPC: F02K9/00

CPC classification number: F02K9/72 ,  F05D2210/33 ,  F05D2240/35

Abstract: The present invention discloses a dual-vortical-flow hybrid rocket engine, including a main body and a nozzle communicating with an end of the main body. The main body includes a plurality of disk-like combustion chambers arranged longitudinally, and a central combustion chamber formed along the axial portion and communicating the disk-like combustion chambers. Each of the disk-like combustion chambers is provided with a plurality of oxidizer injection nozzles at its inner circumference surface. Inside the disk-like combustion chambers, the oxidizer is injected in nearly the tangent directions of the circumference, and the injection directions are opposite for the neighboring disk-like combustion chambers, which creates vortical flows with opposite rotating directions so as to increase the total residence time of the combustion reactions of the oxidizer and the solid-state fuel in the disk-like combustion chambers of the present invention.

Abstract translation: 本发明公开了一种双涡旋混合火箭发动机，其包括主体和与主体的端部连通的喷嘴。 主体包括纵向布置的多个盘形燃烧室和沿轴向部分形成并连通圆盘状燃烧室的中心燃烧室。 每个盘状燃烧室在其内圆周表面上设置有多个氧化剂注入喷嘴。 在盘状燃烧室内部，氧化剂沿着圆周的切线方向喷射，并且相邻的盘状燃烧室的喷射方向相反，这形成相反旋转方向的涡旋流，从而增加总量 本发明的盘状燃烧室中的氧化剂和固体燃料的燃烧反应的停留时间。

公开(公告)号：US20140249756A1

公开(公告)日：2014-09-04

申请号：US14011753

申请日：2013-08-28

Applicant: National Applied Research Laboratories

Inventor： Ting-Yu Hsu ,  Shieh-Kung Huang

IPC: G08B21/10 ,  G01V1/00

CPC classification number: G08B21/10 ,  G01V1/008

Abstract: An earthquake early warning method for an earthquake detecting system includes utilizing support vector regression (SVR) method to build an earthquake detecting model according to the a plurality of vectors, wherein each of the vectors is corresponding to an earthquake information and a ground motion intensity; detecting a new earthquake information of a new earthquake and generating a specific vector according to the new earthquake information when the new earthquake occurs; and predicting a new ground motion intensity of the new earthquake according to the specific vector and the earthquake detecting model.

Abstract translation: 一种地震预警方法，包括利用支持向量回归（SVR）方法根据多个向量建立地震检测模型，其中每个向量对应于地震信息和地面运动强度; 在新的地震发生时，根据新的地震信息检测新的地震新地震信息，并产生特定的矢量; 并根据特定向量和地震检测模型预测新地震的新地面运动强度。

公开(公告)号：US20140132965A1

公开(公告)日：2014-05-15

申请号：US13799095

申请日：2013-03-13

Applicant: NATIONAL APPLIED RESEARCH LABORATORIES

Inventor： WEN-YI CHANG ,  FRANCO LIN ,  LUNG-CHENG LEE ,  HUNG-TA HSIAO ,  SHOU-I CHEN ,  YU-CHI SUNG ,  TAI-SHAN LIAO ,  CHIH-YEN CHEN

IPC: G01B11/02

CPC classification number: G01B11/02

Abstract: The present invention relates to a method for measuring cracks remotely and the device thereof. First, multiple laser spots with known a shape are projected onto a remote wall and beside a crack. Then, by using geometric calculations, the relative coordinates of the laser spots on the wail and the real distance can be given and used as the reference length of the crack. Next, a camera is used for taking a picture of the remote crack along with the laser spots; the image identification technology is used for calculating the relevant parameters of the crack. Thereby, to acquire the parameters of the crack, a user needs not to be present at the site for measuring at a short distance or placing a reference object, and thus providing safety and convenience.

Abstract translation: 本发明涉及一种远程测量裂缝的方法及其装置。 首先，将具有已知形状的多个激光点投影到远程壁上并在裂纹旁边。 然后，通过使用几何计算，可以给出激光点在距离上的相对坐标和实际距离，并用作裂纹的参考长度。 接下来，使用相机与激光点一起拍摄远程裂纹的图片; 图像识别技术用于计算裂纹的相关参数。 因此，为了获取裂纹的参数，用户不需要在现场进行短距离测量或放置参考对象，从而提供安全和方便。

公开(公告)号：US20140094023A1

公开(公告)日：2014-04-03

申请号：US13799957

申请日：2013-03-13

Applicant: NATIONAL APPLIED RESEARCH LABORATORIES

Inventor： Yao-Jen Lee ,  Po-Jung Sung ,  Da-Wei Heh ,  Fu-Ju Hou ,  Chih-Hung Lo ,  Fu-Kuo Hsueh ,  Hsiu-Chih Chen

IPC: H01L21/20

CPC classification number: H01L21/2022 ,  H01L21/28518

Abstract: A fabricating method of a semiconductor chip includes the following steps. Firstly, a substrate is provided, wherein an amorphous semiconductor layer is formed in a first surface of the substrate. Then, a first metal layer is formed on the amorphous semiconductor layer. Then, a thermal-treating process is performed to result in a chemical reaction between the first metal layer and a part of the amorphous semiconductor layer, thereby producing an amorphous metal semiconductor compound layer. Afterwards, a microwave annealing process is performed to recrystallize the amorphous metal semiconductor compound layer as a polycrystalline metal semiconductor compound layer.

Abstract translation: 半导体芯片的制造方法包括以下步骤。 首先，提供衬底，其中在衬底的第一表面中形成非晶半导体层。 然后，在非晶半导体层上形成第一金属层。 然后，进行热处理工序，导致第一金属层与非晶半导体层的一部分之间发生化学反应，由此生成非晶金属半导体化合物层。 之后，进行微波退火处理，使作为多晶金属半导体化合物层的非晶质金属半导体化合物层再结晶。