公开(公告)号：US09540226B2

公开(公告)日：2017-01-10

申请号：US14717556

申请日：2015-05-20

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Martin Wurzer ,  Stefan Barzen ,  Alfons Dehe

IPC: H01L29/84 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B3/007 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C1/00658 ,  H04R19/005 ,  H04R19/04 ,  H04R31/006 ,  H04R2201/003

Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a first electrode, a second electrode fixed to an anchor at a perimeter of the second electrode, and a mechanical support separate from the anchor at the perimeter of the second electrode and mechanically connected to the first electrode and the second electrode. The mechanical support is fixed to a portion of the second electrode such that, during operation, a maximum deflection of the second electrode occurs between the mechanical structure and the perimeter of the second electrode.

Abstract translation: 根据实施例，微机电系统（MEMS）换能器包括第一电极，固定到第二电极的周边处的锚固件的第二电极以及与第二电极的周边处的锚固件分离的机械支撑件，并机械连接 到第一电极和第二电极。 机械支撑件固定到第二电极的一部分，使得在操作期间，第二电极的最大偏转发生在机械结构和第二电极的周边之间。

公开(公告)号：US20160377569A1

公开(公告)日：2016-12-29

申请号：US14749102

申请日：2015-06-24

Applicant: Infineon Technologies AG

Inventor： Vijaye Kumar Rajaraman ,  Yonsuang Arnanthigo ,  Alfons Dehe ,  Stefan Kolb

IPC: G01N27/22 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81B7/02 ,  B81B3/0018 ,  B81B2201/0214 ,  B81B2201/0257 ,  B81B2201/0278 ,  B81C1/00166 ,  B81C1/00182 ,  B81C1/00206 ,  G01N27/223 ,  H04R19/005 ,  H04R19/04 ,  H04R31/003 ,  H04R2201/003

Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a substrate with a first cavity that passes through the substrate from a backside of the substrate. The MEMS transducer also includes a perforated first electrode plate overlying the first cavity on a topside of the substrate, a second electrode plate overlying the first cavity on the topside of the substrate and spaced apart from the perforated first electrode plate by a spacing region, and a gas sensitive material in the spacing region between the perforated first electrode plate and the second electrode plate. The gas sensitive material has an electrical property that is dependent on a concentration of a target gas.

Abstract translation: 根据实施例，微机电系统（MEMS）换能器包括具有第一空腔的衬底，该衬底从衬底的背面穿过衬底。 所述MEMS换能器还包括覆盖所述基底顶面上的所述第一空腔的穿孔第一电极板，覆盖所述基底的顶侧上的所述第一空腔并且与穿孔的第一电极板间隔开间隔区域的第二电极板，以及 在穿孔的第一电极板和第二电极板之间的间隔区域中的气体敏感材料。 气体敏感材料具有取决于目标气体浓度的电性质。

公开(公告)号：US09494477B2

公开(公告)日：2016-11-15

申请号：US14231068

申请日：2014-03-31

Applicant: Infineon Technologies AG

Inventor： Andreas Wiesbauer ,  Alfons Dehe

IPC: G01L9/00 ,  B81B3/00 ,  H04R1/08 ,  G01L9/08

CPC classification number: G01L9/0073 ,  B81B3/0021 ,  B81B2201/0264 ,  G01L9/0042 ,  G01L9/0052 ,  G01L9/0072 ,  G01L9/0082 ,  G01L9/08 ,  G01L9/085 ,  H04R1/08 ,  H04R2201/003

Abstract: According to various embodiments, a dynamic pressure sensor includes a substrate, a reference volume formed in the substrate, a deflectable membrane sealing the reference volume, a deflection sensing element coupled to the membrane and configured to measure a deflection of the membrane, and a ventilation hole configured to equalize an absolute pressure inside the reference volume with an absolute ambient pressure outside the reference volume.

Abstract translation: 根据各种实施例，动态压力传感器包括衬底，形成在衬底中的参考体积，密封参考体积的可偏转膜，耦合到膜并被配置成测量膜偏转的偏转感测元件，以及通气 孔被配置为使参考体积内的绝对压力与参考体积外的绝对环境压力相等。

公开(公告)号：US09487386B2

公开(公告)日：2016-11-08

申请号：US13743306

申请日：2013-01-16

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0005 ,  B81B3/001 ,  B81B2201/0257 ,  B81B2203/0136 ,  B81C1/0015 ,  B81C1/00968 ,  B81C2201/112

Abstract: A MEMS device and a method to manufacture a MEMS device are disclosed. An embodiment includes forming trenches in a first main surface of a substrate, forming conductive fingers by forming a conductive material in the trenches and forming an opening from a second main surface of the substrate thereby exposing the conductive fingers, the second main surface opposite the first main surface.

Abstract translation: 公开了MEMS器件和制造MEMS器件的方法。 一个实施例包括在衬底的第一主表面中形成沟槽，通过在沟槽中形成导电材料形成导电指状物并从衬底的第二主表面形成开口，从而暴露导电指状物，第二主表面与第一主表面相反 主表面。

公开(公告)号：US20160311679A1

公开(公告)日：2016-10-27

申请号：US15138313

申请日：2016-04-26

Applicant: Infineon Technologies AG

Inventor： Dominic Maier ,  Alfons Dehe ,  Thomas Kilger ,  Markus Menath ,  Franz Xaver Muehlbauer ,  Daniel Porwol ,  Juergen Wagner

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00896 ,  B81C1/00269 ,  B81C1/00801 ,  B81C2201/0194 ,  B81C2201/053

Abstract: A method of producing a chip package is described. A plurality of chips is provided on a first wafer. Each chip has a cavity which opens to a first main face of the chip. The cavities are filled or covered temporarily. The chips are then singulated. The singulated chips are embedded in an encapsulation material, and then the cavities are re-exposed.

Abstract translation: 对芯片封装的制造方法进行说明。 多个芯片设置在第一晶片上。 每个芯片具有通向芯片的第一主面的空腔。 空腔被暂时填充或覆盖。 然后将芯片分开。 单片化芯片嵌入封装材料中，然后将空腔重新曝光。

公开(公告)号：US20160221822A1

公开(公告)日：2016-08-04

申请号：US14613106

申请日：2015-02-03

Applicant: Infineon Technologies AG

Inventor： Ulrich Krumbein ,  Alfons Dehe

IPC: B81B7/00 ,  H04R23/00 ,  B81C1/00

CPC classification number: H04R23/00 ,  B81B7/02 ,  B81B2201/0257 ,  B81B2201/0278 ,  B81B2207/015 ,  H04R17/02 ,  H04R19/005 ,  H04R19/013 ,  H04R19/016 ,  H04R19/02 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: According to embodiment, a transducer includes a microfabricated element integrated on a single die and an interface IC coupled to the microfabricated element. The microfabricated element includes an acoustic transducer and a temperature sensor, and the interface IC is electrically coupled to the acoustic transducer and the temperature sensor.

Abstract translation: 根据实施例，换能器包括集成在单个管芯上的微加工元件和耦合到微加工元件的接口IC。 微制造元件包括声换能器和温度传感器，并且接口IC电耦合到声换能器和温度传感器。

公开(公告)号：US09402138B2

公开(公告)日：2016-07-26

申请号：US13651372

申请日：2012-10-12

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stephan Pindl ,  Bernhard Knott ,  Carsten Ahrens

IPC: H01L29/84 ,  H04R19/04 ,  H04R19/00 ,  H04R31/00 ,  B81C1/00

CPC classification number: B81C1/00825 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00873 ,  B81C2201/017 ,  B81C2201/053 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

Abstract translation: 公开了一种制造MEMS器件的方法。 此外，公开了一种MEMS器件和包括MEMS器件的模块。 一个实施例包括用于制造MEMS器件的方法，包括在衬底的第一主表面上形成MEMS堆叠，在衬底的第二主表面上形成聚合物层，并在聚合物层和衬底中形成第一开口，使得 第一个开口与MEMS堆栈相邻。

公开(公告)号：US09309105B2

公开(公告)日：2016-04-12

申请号：US14198645

申请日：2014-03-06

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Roland Helm

IPC: H01L29/84 ,  H01L21/00 ,  B81B7/00 ,  G01L1/14 ,  G01L13/02 ,  H04R23/00 ,  G01L9/00

CPC classification number: B81B7/04 ,  B81B7/0041 ,  B81B2201/0257 ,  B81B2201/0264 ,  G01L1/14 ,  G01L9/0041 ,  G01L9/0042 ,  G01L9/0072 ,  G01L9/0073 ,  G01L13/025 ,  H04R19/005 ,  H04R23/00 ,  H04R2201/003

Abstract: In various embodiments, a sensor structure is provided. The sensor structure may include a first conductive layer; an electrode element; and a second conductive layer arranged on an opposite side of the electrode element from the first conductive layer. The first conductive layer and the second conductive layer may form a chamber. The pressure in the chamber may be lower than the pressure outside of the chamber.

Abstract translation: 在各种实施例中，提供传感器结构。 传感器结构可以包括第一导电层; 电极元件; 以及布置在电极元件的与第一导电层相对的一侧的第二导电层。 第一导电层和第二导电层可以形成室。 室中的压力可以低于室外的压力。

公开(公告)号：US20160066099A1

公开(公告)日：2016-03-03

申请号：US14934340

申请日：2015-11-06

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Andreas Froemel

IPC: H04R19/04 ,  H04R7/08 ,  H04R19/00

CPC classification number: H04R19/04 ,  B81B3/0021 ,  B81B3/0078 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00158 ,  H04R7/02 ,  H04R7/08 ,  H04R19/005 ,  H04R23/006 ,  H04R31/00 ,  H04R2201/003 ,  H04R2410/03

Abstract: A MEMS microphone includes a first diaphragm element, a counter electrode element, and a low pressure region between the first diaphragm element and the counter electrode element. The low pressure region has a pressure less than an ambient pressure.

Abstract translation: MEMS麦克风包括第一隔膜元件，对电极元件和第一隔膜元件与对电极元件之间的低压区域。 低压区域的压力小于环境压力。

公开(公告)号：US09227843B2

公开(公告)日：2016-01-05

申请号：US14511652

申请日：2014-10-10

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe

IPC: H01L21/00 ,  B81C1/00 ,  B81B3/00 ,  H04R19/00

CPC classification number: B81C1/00269 ,  B81B3/001 ,  B81B3/007 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00166 ,  B81C1/00658 ,  H04R19/005

Abstract: MEMS devices with a rigid backplate and a method of making a MEMS device with a rigid backplate are disclosed. In one embodiment, a device includes a substrate and a backplate supported by the substrate. The backplate includes elongated protrusions.

Abstract translation: 公开了具有刚性背板的MEMS装置和制造具有刚性背板的MEMS装置的方法。 在一个实施例中，装置包括基板和由基板支撑的背板。 背板包括细长突起。