公开(公告)号：US08829449B2

公开(公告)日：2014-09-09

申请号：US14228813

申请日：2014-03-28

Applicant: Hamamatsu Photonics K.K.

Inventor： Toshiyasu Suyama ,  Mototsugu Sugiyama

IPC: G01T1/20 ,  G01J1/58 ,  G01N23/04 ,  G21K4/00

CPC classification number: G21K4/00 ,  B82Y10/00 ,  G01N23/04 ,  G01T1/2008 ,  G01T3/06 ,  G21K2201/061

Abstract: This scintillator plate 1 is a scintillator plate which is a member of a flat plate shape to emit scintillation light according to incidence of radiation transmitted by an object A and which is used in an image acquisition device to condense and image the scintillation light, the scintillator plate comprising: a partition plate 2 of a planar shape which transmits radiation; a scintillator 3 of a flat plate shape which is arranged on one surface 2a of the partition plate 2 and which converts the radiation into scintillation light; and a scintillator 4 of a flat plate shape which is arranged on the other surface 2b of the partition plate 2 and which converts the radiation into scintillation light.

Abstract translation: 该闪烁体板1是闪烁体板，其是根据物体A发射的辐射的入射发射闪烁光的平板形状的构件，并且其用于图像采集装置中以冷凝和成像闪烁光，闪烁体 板包括：透射辐射的平面形状的分隔板2; 平板状闪烁器3，其设置在隔板2的一个表面2a上，并将辐射转换为闪烁光; 以及平板形状的闪烁器4，其设置在隔板2的另一个表面2b上，并将辐射转换成闪烁光。

公开(公告)号：US20140211918A1

公开(公告)日：2014-07-31

申请号：US14228813

申请日：2014-03-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Toshiyasu SUYAMA ,  Mototsugu SUGIYAMA

IPC: G21K4/00 ,  G01N23/04

CPC classification number: G21K4/00 ,  B82Y10/00 ,  G01N23/04 ,  G01T1/2008 ,  G01T3/06 ,  G21K2201/061

Abstract: This scintillator plate 1 is a scintillator plate which is a member of a flat plate shape to emit scintillation light according to incidence of radiation transmitted by an object A and which is used in an image acquisition device to condense and image the scintillation light, the scintillator plate comprising: a partition plate 2 of a planar shape which transmits radiation; a scintillator 3 of a flat plate shape which is arranged on one surface 2a of the partition plate 2 and which converts the radiation into scintillation light; and a scintillator 4 of a flat plate shape which is arranged on the other surface 2b of the partition plate 2 and which converts the radiation into scintillation light.

公开(公告)号：US08686370B2

公开(公告)日：2014-04-01

申请号：US13675972

申请日：2012-11-13

Applicant: Cymer, Inc.

Inventor： Norbert R. Bowering ,  Oleh V. Khodykin

IPC: G01J1/00

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G01J1/429 ,  G03F7/70941 ,  G03F7/70958 ,  G03F7/70975 ,  G21K2201/061 ,  G21K2201/067 ,  H05G2/003 ,  H05G2/005 ,  H05G2/008

Abstract: A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps/acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps/acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.

Abstract translation: 公开了一种用于EUV反射镜的原位监测以确定光学降解程度的方法。 该方法可以包括用具有波长在EUV谱以外的波长的光照射反射镜的至少一部分的步骤/动作，在光已经从反射镜反射之后测量光的至少一部分，并且使用该测量和 镜面退化和光反射率之间的预定关系，以估计多层镜面退化的程度。 还公开了一种用于制备近似法线入射的EUV反射镜的方法，该反射镜可以包括提供金属基底的步骤/动作，转动基底的表面的金刚石，使用物理气相沉积沉积覆盖表面的至少一种中间材料 技术，并沉积覆盖中间材料的多层镜面涂层。

公开(公告)号：US20140022525A1

公开(公告)日：2014-01-23

申请号：US14032724

申请日：2013-09-20

Applicant: CARL ZEISS SMT GMBH

Inventor： Hartmut ENKISCH ,  Stephan MUELLENDER ,  Martin ENDRES

IPC: G03F7/20 ,  G02B17/06

CPC classification number: G03F7/702 ,  B82Y10/00 ,  G02B17/06 ,  G02B17/0663 ,  G03F7/70191 ,  G03F7/70308 ,  G03F7/70316 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/067

Abstract: A deflection mirror (1, 501, etc.) for a microlithography projection exposure apparatus for illuminating an object field in an object plane of the projection exposure apparatus (1067) using the deflection mirror with grazing incidence. This deflection mirror has a substrate (3, 503, etc.) and at least one layer system (5, 505, etc.), and during operation light impinges on said mirror at a multiplicity of angles of incidence, wherein the layer system is designed such that, for light having a wavelength of less than 30 nm, for an angle of incidence of between 55° and 70°, the variation of the reflectivity is less than 20%, in particular less than 12%.

Abstract translation: 一种用于使用具有掠入射的偏转镜照射投影曝光设备（1067）的物平面中的物场的微光刻投影曝光设备的偏转镜（1,501等）。 该偏转镜具有衬底（3,503等）和至少一个层系（5,505等），并且在操作期间，光以多个入射角撞击在所述反射镜上，其中层系是 设计成使得对于波长小于30nm的光，对于入射角在55°和70°之间的反射率的变化小于20％，特别是小于12％。

公开(公告)号：US20130141707A1

公开(公告)日：2013-06-06

申请号：US13754720

申请日：2013-01-30

Applicant: Carl Zeiss SMT GmbH ,  ASML Netherlands B.V.

Inventor： Norman Baer ,  Ulrich Loering ,  Oliver Natt ,  Gero Wittich ,  Timo Laufer ,  Peter Kuerz ,  Guido Limbach ,  Stefan Hembacher ,  Holger Walter ,  Yim-Bun-Patrick Kwan ,  Markus Hauf ,  Franz-Josef Stickel ,  Jan Van Schoot

IPC: G03B27/54 ,  G02B5/08 ,  G02B3/00

CPC classification number: G03F7/7015 ,  B82Y10/00 ,  G02B3/00 ,  G02B5/08 ,  G02B5/0816 ,  G02B5/0891 ,  G02B7/1815 ,  G02B17/0647 ,  G02B27/0043 ,  G03B27/542 ,  G03F7/702 ,  G03F7/70233 ,  G03F7/70316 ,  G03F7/70825 ,  G03F7/70891 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract translation: 具有至少两个反射光学元件的EUV光刻投影曝光系统的投影透镜，每个反射光学元件均包括主体和反射表面，用于在掩模版上投影到基板上的图像场上，如果投影透镜曝光 EUV光的功率，其中至少两个反射光学元件的主体包括具有温度依赖的热膨胀系数的材料，其在相应的零交叉温度下为零，并且其中零交叉温度之间的差的绝对值更多 超过6K。

公开(公告)号：US08382301B2

公开(公告)日：2013-02-26

申请号：US12403233

申请日：2009-03-12

Applicant: Dirk Heinrich Ehm ,  Stephan Muellender ,  Thomas Stein ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Dieter Kraus ,  Richard Versluis ,  Marcus Gerhardus Hendrikus Meijerink

Inventor： Dirk Heinrich Ehm ,  Stephan Muellender ,  Thomas Stein ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Dieter Kraus ,  Richard Versluis ,  Marcus Gerhardus Hendrikus Meijerink

IPC: G02B5/08 ,  H01S3/22

CPC classification number: G03B27/16 ,  B82Y10/00 ,  G03F7/70841 ,  G03F7/70883 ,  G03F7/70916 ,  G21K2201/061

Abstract: An optical arrangement, e.g. a projection exposure apparatus (1) for EUV lithography, includes: a housing (2) enclosing an interior space (15); at least one, preferably reflective optical element (4-10, 12, 14.1-14.6) arranged in the housing (2); at least one vacuum generating unit (3) for the interior space (15) of the housing (2); and at least one vacuum housing (18, 18.1-18.10) arranged in the interior space (15) and enclosing at least the optical surface (17, 17.1, 17.2) of the optical element (4-10, 12, 14.1-14.5). A contamination reduction unit is associated with the vacuum housing (18.1-18.10) and reduces the partial pressure of contaminating substances, in particular of water and/or hydrocarbons, at least in close proximity to the optical surface (17, 17.1, 17.2) in relation to the partial pressure of the contaminating substances in the interior space (15).

公开(公告)号：US20130022171A1

公开(公告)日：2013-01-24

申请号：US13637391

申请日：2010-07-30

Applicant: Kyong Woo Kim ,  Jae Hee Kim ,  Young Man Kwon ,  Cheol Woo Ryu

Inventor： Kyong Woo Kim ,  Jae Hee Kim ,  Young Man Kwon ,  Cheol Woo Ryu

IPC: G01N23/04

CPC classification number: A61B6/06 ,  A61B6/4035 ,  A61B6/4064 ,  A61B6/542 ,  B82Y10/00 ,  G21K2201/061 ,  G21K2201/067

Abstract: The present disclosure relates to an apparatus for alignment of multilayer film mirrors for a monochromatic X-ray generator and an X-ray image detecting method using the same. The apparatus for alignment of multilayer film mirrors for a monochromatic X-ray generator includes a collimator disposed between an X-ray generating unit and a detector and aligning them and limiting the radiation direction of X-ray to provide an optimum incident angle to multilayer film mirrors generating the monochromatic X-ray from the X-ray.

Abstract translation: 本公开涉及用于单色X射线发生器的多层膜反射镜的对准装置和使用其的X射线图像检测方法。 用于单色X射线发生器的多层膜反射镜对准装置包括设置在X射线产生单元和检测器之间的准直器并对准它们并限制X射线的辐射方向以向多层膜提供最佳入射角 从X射线产生单色X射线的镜子。

公开(公告)号：US20120328082A1

公开(公告)日：2012-12-27

申请号：US13582578

申请日：2010-06-01

Applicant: Wataru Kubo ,  Kohei Okamoto ,  Atsushi Komoto ,  Hirokatsu Miyata

Inventor： Wataru Kubo ,  Kohei Okamoto ,  Atsushi Komoto ,  Hirokatsu Miyata

IPC: G21K1/06 ,  B05D5/00

CPC classification number: G21K1/062 ,  B05D5/00 ,  G21K1/06 ,  G21K2201/061 ,  H01J2235/168

Abstract: Provided is an X-ray mirror, a method of producing the X-rat mirror, and an X-ray apparatus. The X-ray mirror comprises: a substrate; and an X-ray reflecting structure formed of multiple regions present on the substrate, in which the X-ray reflecting structure comprises a mesostructured film that has the multiple regions having different structural periods in a normal direction of the substrate. Thus, there can be reduced the absorption loss of an X-ray of the mirror that reflects X-rays having different energies.

Abstract translation: 本发明提供一种X射线镜，X射线镜的制造方法以及X射线装置。 X射线镜包括：基片; 以及由存在于基板上的多个区域形成的X射线反射结构，其中，X射线反射结构包括具有在基板的法线方向上具有不同结构周期的多个区域的介孔结构膜。 因此，可以减少反射具有不同能量的X射线的反射镜的X射线的吸收损失。

公开(公告)号：US20120320354A1

公开(公告)日：2012-12-20

申请号：US13438337

申请日：2012-04-03

Applicant: Andrei Mikhailovich YAKUNIN

Inventor： Andrei Mikhailovich YAKUNIN

IPC: G03B27/70 ,  G02B1/10 ,  B05D5/06 ,  G02B5/08

CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  C03C17/3642 ,  C03C17/3663 ,  G02B5/0891 ,  G21K1/062 ,  G21K2201/061

Abstract: A multilayer mirror constructed to reflect radiation having a wavelength in the range of 6.4 nm to 7.2 nm. The multilayer mirror has alternating layers, including a first layer and a second layer. The first and second layers are selected from the group consisting of: U, or a compound or nitride thereof, and B4C layers; Th, or a compound or nitride thereof, and B4C layers; La, or a compound or nitride thereof, and B9C layers; La, or a compound or nitride thereof, and B4C layers; U, or a compound or nitride thereof, and B9C layers; Th, or a compound or nitride thereof, and B9C layers; La, or a compound or nitride thereof, and B layers; U, or a compound or nitride thereof, and B layers; C, or a compound or nitride thereof, and B layers; Th, or a compound or nitride thereof, and B layers.

Abstract translation: 构造成反射波长在6.4nm至7.2nm范围内的辐射的多层反射镜。 多层反射镜具有交替层，包括第一层和第二层。 第一层和第二层选自：U或其化合物或氮化物和B4C层; Th或其化合物或氮化物，以及B4C层; La或其化合物或氮化物和B9C层; La或其化合物或氮化物，以及B4C层; U或其化合物或氮化物，以及B9C层; Th或其化合物或氮化物和B9C层; La或其化合物或氮化物，以及B层; U或其化合物或氮化物，和B层; C或其化合物或氮化物，和B层; Th或其化合物或氮化物，以及B层。

公开(公告)号：US08335039B2

公开(公告)日：2012-12-18

申请号：US13238748

申请日：2011-09-21

Applicant: Dong-gun Lee ,  Seong-sue Kim

Inventor： Dong-gun Lee ,  Seong-sue Kim

IPC: G02B27/44 ,  G03F7/20 ,  G21K1/06

CPC classification number: G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/84 ,  G21K2201/061

Abstract: An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.

Abstract translation: 一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光 在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测 来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr，其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA， ＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。