公开(公告)号：US5382867A

公开(公告)日：1995-01-17

申请号：US954396

申请日：1992-09-30

Applicant: Marou Yuji ,  Akagi Yutaka ,  Ise Tomokazu ,  Urayama Masao

Inventor： Marou Yuji ,  Akagi Yutaka ,  Ise Tomokazu ,  Urayama Masao

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J21/10 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J1/30 ,  H01J1/3042 ,  H01J21/105 ,  H01J3/021

Abstract: A field-emission electronic device works as a field-emission electron source. The field-emission electronic device comprises an anode electrode, a first insulating member disposed on the anode electrode, a cathode electrode disposed on the first insulating member, a second insulating member disposed on the anode electrode at a distance from the first insulating member, and a gate electrode disposed on the second insulating member. Therefore, the field-emission electronic device can be formed to make the distance between the electrodes smaller than that of the known field-emission electronic device. Concretely, the distances between the cathode electrode and the gate electrode and between the cathode electrode and the anode electrode are allowed to be reduced. This results in lowering a gate voltage and an anode voltage.

Abstract translation: 场致发射电子器件用作场致发射电子源。 场发射电子器件包括阳极电极，设置在阳极电极上的第一绝缘构件，设置在第一绝缘构件上的阴极电极，设置在距第一绝缘构件一定距离的阳极电极上的第二绝缘构件，以及 设置在所述第二绝缘构件上的栅电极。 因此，场致发射电子器件可以形成为使得电极之间的距离小于已知的场致发射电子器件的距离。 具体地说，可以减小阴极电极和栅电极之间以及阴极电极和阳极电极之间的距离。 这导致栅极电压和阳极电压降低。

公开(公告)号：US5289077A

公开(公告)日：1994-02-22

申请号：US826459

申请日：1992-01-27

Applicant: Ryuichi Ugajin

Inventor： Ryuichi Ugajin

IPC: H01J3/02 ,  H01J21/10 ,  H01J19/24 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J21/105

Abstract: A vacuum microelectronic transistor which can operate at a high speed and has a high mutual conductance. The vacuum microelectronic transistor comprises an emitter for emitting electrons therefrom, a collector for receiving electrons from the emitter, and a pair of gate electrodes for controlling arrival of electrons from the emitter to the collector. The emitter and collector are disposed in an encapsulated condition on a substrate such that electrons emitted from the emitter run straightforwardly in vacuum to the collector while the gate electrodes are located adjacent and across a route of such electrons from the emitter to the collector. Also, a process of manufacturing such vacuum microelectronic transistor is disclosed.

Abstract translation: 一种真空微电子晶体管，可以高速运转并具有很高的互导性。 真空微电子晶体管包括用于从其发射电子的发射器，用于从发射极接收电子的集电极和用于控制电子从发射极到达集电极的一对栅电极。 发射极和集电极以封装状态设置在基板上，使得从发射极发射的电子在真空中直接运行到集电极，同时栅电极位于这些电子相邻并跨过这些电子从发射极到集电极的路径。 此外，公开了制造这种真空微电子晶体管的工艺。

公开(公告)号：US5283501A

公开(公告)日：1994-02-01

申请号：US732298

申请日：1991-07-18

Applicant: Xiaodong T. Zhu ,  James E. Jaskie ,  Robert C. Kane

Inventor： Xiaodong T. Zhu ,  James E. Jaskie ,  Robert C. Kane

IPC: H01J29/04 ,  H01J1/02 ,  H01J1/304 ,  H01J3/02 ,  H01J3/04 ,  H01J21/00 ,  H01J31/12 ,  H05B41/00

CPC classification number: H01J1/3042 ,  H01J3/022 ,  H01J2201/30457

Abstract: Electron devices employing electron sources including a material having a surface exhibiting a very low/negative electron affinity such as, for example, the 111 crystallographic plane of type II-B diamond. Electron sources with geometric discontinuities exhibiting radii of curvature of greater than approximately 1000.ANG. are provided which substantially improve electron emission levels and relax tip/edge feature requirements. Electron devices employing such electron sources are described including image generation electron devices, light source electron devices, and information signal amplifier electron devices.

Abstract translation: 使用电子源的电子器件包括具有非常低/负电子亲和力的表面的材料，例如II-B型金刚石的111晶体平面。 提供具有大于约1000（Aangstroem）的曲率半径的几何不连续性的电子源，其基本上改善电子发射水平并缓和尖端/边缘特征要求。 描述了使用这种电子源的电子器件，其包括图像生成电子器件，光源电子器件和信息信号放大器电子器件。

公开(公告)号：US5256936A

公开(公告)日：1993-10-26

申请号：US766071

申请日：1991-09-27

Applicant: Shigeo Itoh ,  Teruo Watanabe ,  Hisashi Nakata ,  Norio Nishimura ,  Junji Itoh ,  Seigo Kanemaru

Inventor： Shigeo Itoh ,  Teruo Watanabe ,  Hisashi Nakata ,  Norio Nishimura ,  Junji Itoh ,  Seigo Kanemaru

IPC: H01J3/02 ,  H01J31/12 ,  H01J17/49

CPC classification number: H01J3/022 ,  H01J31/127

Abstract: An image display device capable of minutely setting the interval between an emitter (6) and a gate (5) with high accuracy and of being driven at a significantly reduced drive voltage with good emission uniformity. Each emitter (6) is provided in a recess in a substrate (2), so that the interval between the emitter (6) and a gate (5) is determined depending upon the thickness of the emitter (6). Thus, the interval can be readily controlled by adjusting or varying the period of time during which the film for the emitter (6) is formed, resulting in a micro-interval of the order of sub-microns between the two components being possible with high accuracy.

Abstract translation: 一种图像显示装置，其能够以高精度精确地设置发射极（6）和栅极（5）之间的间隔，并以显着降低的驱动电压驱动，并具有良好的发射均匀性。 每个发射器（6）设置在衬底（2）中的凹部中，使得发射极（6）和栅极（5）之间的间隔根据发射极（6）的厚度来确定。 因此，可以通过调节或改变形成发射器（6）的膜的时间段来容易地控制间隔，导致两个部件之间的亚微米量级的微间隔可以高 准确性。

公开(公告)号：US5235244A

公开(公告)日：1993-08-10

申请号：US942361

申请日：1992-09-08

Applicant: Charles A. Spindt

Inventor： Charles A. Spindt

IPC: H01J3/02

CPC classification number: H01J3/022

Abstract: An arrangement for and method of automatically collimating an expanding electron beam emitted from a field emission cathode is disclosed herein. This is accomplished without an externally powered colimating or focusing electrode. Rather, a dielectric member is positioned around the path taken by the beam so that when the beam is initially turned on, it bombards the dielectric member with free electrons and thereby places a negative electrostatic charge, ultimately reaching the potential of the cathode electrode itself, on the dielectric member. This electrostatic charge, in turn, causes the cross-sectional configuration of the beam to contract.

Abstract translation: 本文公开了一种自动准直从场致发射阴极发射的扩展电子束的装置和方法。 这是在没有外部供电的混合或聚焦电极的情况下实现的。 相反，电介质构件围绕由梁获取的路径定位，使得当光束最初接通时，其以自由电子轰击电介质构件，从而放置负静电电荷，最终达到阴极电极本身的电位， 在电介质构件上。 这种静电电荷又导致光束的横截面形状收缩。

公开(公告)号：US5229682A

公开(公告)日：1993-07-20

申请号：US841194

申请日：1992-02-21

Applicant: Hiroshi Komatsu

Inventor： Hiroshi Komatsu

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01L23/544

CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J9/025 ,  H01L23/544 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226 ,  H01L2223/54473 ,  H01L2924/0002

Abstract: A field emission device and method for manufacturing which comprises using a diffusion mask to preserve an area of a silicon substrate for use as a cathode while all around the cathode the substrate is being diffused with oxygen to form an insulating layer. And further comprising depositing a molybdenum gate electrode layer on the insulating layer and etching the molybdenum gate electrode layer such that the diffusion mask falls off and the insulating layer is dissolved around the cathode through the hole formed in the gate electrode layer by the diffusion mask being removed. The gate electrode openings are therefore automatically and independently self-aligned with their respective cathodes.

Abstract translation: 一种场致发射器件及其制造方法，其包括使用扩散掩模来保留用于阴极的硅衬底的面积，同时所述衬底周围的所述衬底全部被氧扩散以形成绝缘层。 并且还包括在所述绝缘层上沉积钼栅极层并蚀刻所述钼栅极层，使得所述扩散掩模脱落，并且所述绝缘层通过所述扩散掩模通过形成在所述栅电极层中的所述孔溶解在所述阴极周围 删除。 因此，栅电极开口自动且独立地与它们各自的阴极自对准。

公开(公告)号：US5201681A

公开(公告)日：1993-04-13

申请号：US848727

申请日：1992-03-09

Applicant: Masahiko Okunuki ,  Akira Suzuki ,  Isamu Shimoda ,  Tetsuya Kaneko ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Takao Yonehara ,  Takeshi Ichikawa

Inventor： Masahiko Okunuki ,  Akira Suzuki ,  Isamu Shimoda ,  Tetsuya Kaneko ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Takao Yonehara ,  Takeshi Ichikawa

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J3/022 ,  H01J31/127 ,  H01J2201/30446

Abstract: A method of emitting electrons by applying a voltage between a voltage application electrode and a target to be irradiated with the electrons emitted from an electron emission electrode with a conical portion in an electron emission device. The voltage application electrode is formed to oppose the electron emission electrode so as to sandwich an insulating layer therebetween and the target. A charge of the electron emission electrode which is lost by electron emission during an electron emission operation is supplied after the electron emission operation is completed.

Abstract translation: 通过在电子发射装置中通过在电压施加电极和被电子发射电子发射的电子与电子发射电极发射的锥形部分之间施加电压来照射电子的方法。 电压施加电极形成为与电子发射电极相对以在其间夹有绝缘层和靶。 在电子发射操作完成之后，供给在电子发射操作期间被电子发射损失的电子发射电极的电荷。

公开(公告)号：US5191217A

公开(公告)日：1993-03-02

申请号：US796980

申请日：1991-11-25

Applicant: Robert C. Kane ,  Norman W. Parker

Inventor： Robert C. Kane ,  Norman W. Parker

IPC: H01J19/24 ,  H01J1/304 ,  H01J3/02 ,  H01J3/30 ,  H01J21/10

CPC classification number: H01J3/022

Abstract: A FED with integrally formed deflection electrode coupled to the electron emitter such that any variation of electron emitter operating voltage is coincidentally impressed on the deflection electrode so as to effectively minimize variations in the emitted electron beam cross-section. In image display devices including FEDs with voltage variations induced at the electron emitter to provide image information, integrally formed deflection electrodes are connected to follow the electron emitter variations so that pixel cross-sections remain substantially invariant under device operation.

公开(公告)号：US5157309A

公开(公告)日：1992-10-20

申请号：US582441

申请日：1990-09-13

Applicant: Norman W. Parker ,  Robert C. Kane

Inventor： Norman W. Parker ,  Robert C. Kane

IPC: H01J1/304 ,  H01J3/02

CPC classification number: H01J3/022 ,  H01J2201/319

Abstract: A cold-cathode field emission device controls electron emission by using a current source coupled to the emitter. The open circuit voltage of the current source is less than the voltage at which the FED would emit electrons. Application of an accelerating potential on the gate enables electron emission. Electron emission from the FED is governed by the current source.

Abstract translation: 冷阴极场发射器件通过使用耦合到发射极的电流源来控制电子发射。 电流源的开路电压小于FED发射电子的电压。 栅极上的加速电位的施加使得电子发射。 来自FED的电子发射由当前来源控制。

公开(公告)号：US4987377A

公开(公告)日：1991-01-22

申请号：US429731

申请日：1989-10-31

Applicant: Henry F. Gray ,  Richard F. Greene

Inventor： Henry F. Gray ,  Richard F. Greene

IPC: H01J3/02 ,  H03F1/18 ,  H03F3/60

CPC classification number: H03F1/18 ,  H01J3/022 ,  H03F3/605

Abstract: Distributed amplifiers in integrated circuit form wherein dielectric matel and electrically conductive material combine to form field emitter cathodes, grids, and anodes in a module forming one or more amplifier cells embedded in a matrix of reactive impedances that form companion stripline-like transmission lines in a vacuum or sufficiently low pressure gas such that electrons remain unscattered during travel over trajectories from cathode to anode in a cell.

Abstract translation: 以集成电路形式的分布式放大器，其中电介质材料和导电材料组合以在模块中形成场发射极阴极，栅极和阳极，形成嵌入在反应阻抗矩阵中的一个或多个放大器单元，所述反应阻抗矩阵形成相应的带状线状传输线 真空或足够低的气体，使得电子在从阴极到阳极的轨迹中行进期间保持不散开。