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    EVEN TUNGSTEN ETCH FOR HIGH ASPECT RATIO TRENCHES
    131.
    发明申请
    EVEN TUNGSTEN ETCH FOR HIGH ASPECT RATIO TRENCHES 有权
    即使用于高比例比例的TUNGSTEN蚀刻

    公开(公告)号：US20150170935A1

    公开(公告)日：2015-06-18

    申请号：US14215417

    申请日：2014-03-17

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/3213

    CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J2237/334

    Abstract: Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include ion bombardment of a patterned substrate having high aspect ratio trenches. The ion bombardment includes fluorine-containing ions and the ion bombardment may be stopped before breaking through the horizontal liner portion outside the trenches but near the opening of the trenches. The methods then include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasmas effluents react with exposed surfaces and remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region.

    Abstract translation: 描述了从高纵横比沟槽均匀地蚀刻钨衬垫的方法。 这些方法包括具有高纵横比沟槽的图案化衬底的离子轰击。 离子轰击包括含氟离子，并且可以在穿过沟槽外部的水平衬套部分但在沟槽的开口附近之前停止离子轰击。 然后，该方法包括使用由含氟前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。 等离子体流出物与暴露的表面反应并从沟槽的外部和沟槽的侧壁上除去钨。 等离子体流出物通过位于远程等离子体和基板处理区域之间的离子抑制元件。

    Differential silicon oxide etch
    132.
    发明授权
    Differential silicon oxide etch 有权
    差示氧化硅蚀刻

    公开(公告)号：US09034770B2

    公开(公告)日：2015-05-19

    申请号：US13841009

    申请日：2013-03-15

    Applicant: Applied Materials, Inc.

    Inventor： Seung H. Park ,  Yunyu Wang ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/311

    CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065

    Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.

    Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的氧化硅的方法，并且包括从远程等离子体蚀刻产生的气相蚀刻。 远程等离子体激发含氟前体。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽结合。 由此产生的反应物蚀刻图案化的异相结构，以以不同的蚀刻速率移除不同氧化硅的两个分开的区域。 该方法可用于去除低密度氧化硅，同时去除较少的高密度氧化硅。

    ALUMINUM SELECTIVE ETCH
    133.
    发明申请
    ALUMINUM SELECTIVE ETCH 有权
    铝选择性

    公开(公告)号：US20150129541A1

    公开(公告)日：2015-05-14

    申请号：US14460115

    申请日：2014-08-14

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: C23F1/00 ,  H01L21/3213

    CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

    Abstract: Methods of selectively etching aluminum and aluminum layers from the surface of a substrate are described. The etch selectively removes aluminum materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon carbon nitride, silicon oxycarbide and/or silicon nitride. The methods include exposing aluminum materials (e.g. aluminum) to remotely-excited chlorine (Cl2) in a substrate processing region. A remote plasma is used to excite the chlorine and a low electron temperature is maintained in the substrate processing region to achieve high etch selectivity. Aluminum oxidation may be broken through using a chlorine-containing precursor or a bromine-containing precursor excited in a plasma or using no plasma-excitation, respectively.

    Abstract translation: 描述了从基板的表面选择性地蚀刻铝和铝层的方法。 相对于含硅膜，例如硅，多晶硅，氧化硅，氮化硅，碳氧化硅和/或氮化硅，蚀刻选择性地除去铝材料。 这些方法包括将铝材料（例如铝）暴露于基板处理区域中的远程激发的氯（Cl2）。 使用远程等离子体来激发氯，并且在基板处理区域中保持低电子温度以实现高蚀刻选择性。 可以通过使用在等离子体中激发的或不使用等离子体激发的含氯前体或含溴前驱体来破坏铝的氧化。

    Dry-etch selectivity
    134.
    发明授权
    Dry-etch selectivity 有权
    干蚀刻选择性

    公开(公告)号：US08969212B2

    公开(公告)日：2015-03-03

    申请号：US13834206

    申请日：2013-03-15

    Applicant: Applied Materials, Inc.

    Inventor： He Ren ,  Jang-Gyoo Yang ,  Jonghoon Baek ,  Anchuan Wang ,  Soonam Park ,  Saurabh Garg ,  Xinglong Chen ,  Nitin K. Ingle

    IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

    CPC classification number: H01L21/31116 ,  H01J37/32357

    Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

    Abstract translation: 描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。 等离子体功率是脉冲的，而不是连续地保持。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。 蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已经被发现抑制了到达衬底的离子充电物质的数量。 蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。

    Low cost flowable dielectric films
    135.
    发明授权
    Low cost flowable dielectric films 有权
    低成本流动介电膜

    公开(公告)号：US08889566B2

    公开(公告)日：2014-11-18

    申请号：US13668657

    申请日：2012-11-05

    Applicant: Applied Materials, Inc.

    Inventor： Amit Chatterjee ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Brian Underwood ,  Kiran V. Thadani ,  Xiaolin Chen ,  Abhishek Dube ,  Jingmei Liang

    IPC: C23C16/32 ,  C23C16/34 ,  C23C16/50 ,  H01L21/02 ,  H01L21/31 ,  H01L21/318

    CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219

    Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.

    Abstract translation: 描述形成电介质层的方法。 该方法通过使用局部等离子体的化学气相沉积法沉积含硅膜。 含硅膜在低基板温度下沉积时是可流动的。 将硅前体（例如甲硅烷基胺，高级硅烷或卤代硅烷）输送到衬底处理区域并在局部等离子体中激发。 第二等离子体蒸气或气体与硅衬底加工区域中的硅前体结合，并且可包括氨，氮（N 2），氩，氢（H 2）和/或氧（O 2）。 已经发现本文公开的与这些蒸汽/气体组合组合的设备结构在基板温度低于或约200℃时导致可流动的沉积，当使用较低功率激发局部等离子体时。

    CONFORMAL OXIDE DRY ETCH
    136.
    发明申请
    CONFORMAL OXIDE DRY ETCH 审中-公开
    一氧化氮干燥剂

    公开(公告)号：US20140308818A1

    公开(公告)日：2014-10-16

    申请号：US14314889

    申请日：2014-06-25

    Applicant: Applied Materials, Inc.

    Inventor： Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    IPC: H01L21/311

    CPC classification number: H01L21/31116 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C09K13/08 ,  H01J37/32449 ,  H01J37/32724

    Abstract: A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates up and down the sides of the trench. One disclosed method includes a sequential introduction of (1) a hydrogen-containing precursor and then (2) a fluorine-containing precursor into a substrate processing region. The temperature of the substrate is low during each of the two steps in order to allow the reaction to proceed and form solid residue by-product. A second disclosed method reverses the order of steps (1) and (2) but still forms solid residue by-product. The solid residue by-product is removed by raising the temperature in a subsequent sublimation step regardless of the order of the two steps.

    Abstract translation: 描述了从沟槽蚀刻二氧化硅的方法，其允许沟槽侧面上下的更均匀的蚀刻速率。 一种公开的方法包括将（1）含氢前体和（2）含氟前体顺序地引入基板处理区域中。 为了使反应进行并形成固体残余物副产物，底物的温度在两个步骤中都是低的。 第二个公开的方法逆转步骤（1）和（2）的顺序，但仍然形成固体残余物副产物。 通过在随后的升华步骤中升高温度来去除固体残余副产物，而不管两个步骤的顺序如何。

    Conformal oxide dry etch
    140.
    发明授权
    Conformal oxide dry etch 有权
    保形氧化物干蚀刻

    公开(公告)号：US08801952B1

    公开(公告)日：2014-08-12

    申请号：US13908184

    申请日：2013-06-03

    Applicant: Applied Materials, Inc.

    Inventor： Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC classification number: H01L21/31116 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C09K13/08 ,  H01J37/32449 ,  H01J37/32724

    Abstract: A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates up and down the sides of the trench. One disclosed method includes a sequential introduction of (1) a hydrogen-containing precursor and then (2) a fluorine-containing precursor into a substrate processing region. The temperature of the substrate is low during each of the two steps in order to allow the reaction to proceed and form solid residue by-product. A second disclosed method reverses the order of steps (1) and (2) but still forms solid residue by-product. The solid residue by-product is removed by raising the temperature in a subsequent sublimation step regardless of the order of the two steps.

    Abstract translation: 描述了从沟槽蚀刻二氧化硅的方法，其允许沟槽侧面上下的更均匀的蚀刻速率。 一种公开的方法包括将（1）含氢前体和（2）含氟前体顺序地引入基板处理区域中。 为了使反应进行并形成固体残余物副产物，底物的温度在两个步骤中都是低的。 第二个公开的方法逆转步骤（1）和（2）的顺序，但仍然形成固体残余物副产物。 通过在随后的升华步骤中升高温度来去除固体残余副产物，而不管两个步骤的顺序如何。

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