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    CAPACITORS USING POROUS ALUMINA STRUCTURES
    136.
    发明申请
    CAPACITORS USING POROUS ALUMINA STRUCTURES 有权
    使用多孔氧化铝结构的电容器

    公开(公告)号：US20140268491A1

    公开(公告)日：2014-09-18

    申请号：US13797540

    申请日：2013-03-12

    Applicant: INVENSAS CORPORATION

    Inventor： Rajesh Katkar ,  Cyprian Emeka Uzoh

    IPC: H01G4/08

    CPC classification number: H01G4/33 ,  H01G4/01 ,  H01G4/08 ,  H01G4/10 ,  H01G4/385 ,  H01L28/60 ,  H01L28/92 ,  H01M4/80

    Abstract: Capacitors and methods of making the same are disclosed herein. In one embodiment, a capacitor comprises a structure having first and second oppositely facing surfaces and a plurality of pores each extending in a first direction from the first surface towards the second surface, and each having pore having insulating material extending along a wall of the pore; a first conductive portion comprising an electrically conductive material extending within at least some of the pores; and a second conductive portion comprising a region of the structure consisting essentially of aluminum surrounding individual pores of the plurality of pores, the second conductive portion electrically isolated from the first conductive portion by the insulating material extending along the walls of the pores.

    Abstract translation: 电容器及其制造方法在此公开。 在一个实施例中，电容器包括具有第一和第二相对面的表面和多个孔，每个孔从第一表面朝向第二表面沿第一方向延伸，并且每个孔具有沿孔的壁延伸的绝缘材料 ; 第一导电部分，包括在至少一些孔内延伸的导电材料; 以及第二导电部分，其包括主要由围绕所述多个孔的单个孔的铝构成的结构的区域，所述第二导电部分通过沿着所述孔的壁延伸的绝缘材料与所述第一导电部分电隔离。

    Direct-bonded LED structure contacts and substrate contacts
    137.
    发明授权
    Direct-bonded LED structure contacts and substrate contacts 有权

    公开(公告)号：US11329034B2

    公开(公告)日：2022-05-10

    申请号：US16840245

    申请日：2020-04-03

    Applicant: Invensas Corporation

    Inventor： Min Tao ,  Liang Wang ,  Rajesh Katkar ,  Cyprian Emeka Uzoh

    IPC: H01L21/18 ,  H01L25/16 ,  H01L33/00 ,  H01L25/10 ,  H01L27/12 ,  H01L27/15 ,  H01L25/18 ,  H01L21/321 ,  H01L21/02 ,  H01L23/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62

    Abstract: Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

    IMAGE SENSOR DEVICE
    138.
    发明申请
    IMAGE SENSOR DEVICE 有权

    公开(公告)号：US20210366970A1

    公开(公告)日：2021-11-25

    申请号：US17353103

    申请日：2021-06-21

    Applicant: INVENSAS CORPORATION

    Inventor： Rajesh Katkar

    IPC: H01L27/146 ,  H01L21/768 ,  H01L23/00 ,  H01L23/48

    Abstract: Methods of forming a back side image sensor device, as well as back side image sensor devices formed, are disclosed. In one such a method, an image sensor wafer having a first dielectric layer with a first surface is obtained. A reconstituted wafer having a processor die and a second dielectric layer with a second surface is obtained. The reconstituted wafer and the image sensor wafer are bonded to one another including coupling the first surface of the first dielectric layer and the second surface of the second dielectric layer. In another method, such formation is for a processor die bonded to an image sensor wafer. In yet another method, such formation is for a processor die bonded to an image sensor die.

    ACTIVE BRIDGING APPARATUS
    139.
    发明申请
    ACTIVE BRIDGING APPARATUS 有权

    公开(公告)号：US20210351159A1

    公开(公告)日：2021-11-11

    申请号：US16868701

    申请日：2020-05-07

    Applicant: Invensas Corporation

    Inventor： Javier A. Delacruz ,  Belgacem Haba ,  Rajesh Katkar

    IPC: H01L25/065 ,  H01L23/50 ,  H01L23/00 ,  H03K19/0175 ,  H03K17/56

    Abstract: Techniques and mechanisms for coupling chiplets to microchips utilizing active bridges. The active bridges include circuits that provide various functions and capabilities that previously may have been located on the microchips and/or the chiplets. Furthermore, the active bridges may be coupled to the microchips and the chiplets via “native interconnects” utilizing direct bonding techniques. Utilizing the active bridges and the direct bonding techniques of the active bridges to the microchips and the chiplets, the pitch for the interconnects can be greatly reduced going from a pitch in the millimeters to a fine pitch that may be in a range of less than one micron to approximately five microns.

    Formation of a light-emitting diode display
    140.
    发明授权
    Formation of a light-emitting diode display 有权

    公开(公告)号：US11024220B2

    公开(公告)日：2021-06-01

    申请号：US15994987

    申请日：2018-05-31

    Applicant: Invensas Corporation

    Inventor： Liang Wang ,  Rajesh Katkar ,  Javier A. Delacruz ,  Ilyas Mohammed ,  Belgacem Haba

    IPC: G09G3/32 ,  G09G3/20 ,  H01L33/58 ,  H01L33/38

    Abstract: Apparatus and method relating generally to an LED display is disclosed. In such an apparatus, a driver die has a plurality of driver circuits. A plurality of light-emitting diodes, each having a thickness of 10 microns or less and discrete with respect to one another, are respectively interconnected to the plurality of driver circuits. The plurality of light-emitting diodes includes a first portion for a first color, a second portion for a second color, and a third portion for a third color respectively obtained from a first, a second, and a third optical wafer. The first, the second, and the third color are different from one another.

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