Abstract:
A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.
Abstract:
A glass wafer assembly is disclosed. In one aspect, the glass wafer assembly comprises a first glass wafer and a second glass wafer that are bonded by a conductive sealing ring. The conductive sealing ring defines a substantially hermetically sealed cavity between the first glass wafer and the second glass wafer. In another aspect, the first glass wafer and the second glass wafer each comprise a plurality of conductive through glass vias (TGVs). At least one active device is disposed in the substantially hermetically sealed cavity and can be electrically coupled to a conductive TGV in the first glass wafer and a conductive TGV in the second glass wafer to enable flexible electrical routing through the glass wafer assembly without wire bonding and over molding. As a result, it is possible to reduce footprint and height while improving radio frequency (RF) performance of the glass wafer assembly.
Abstract:
The present invention relates to a micro normally-closed structure, which is manufactured by a MEMS process and used as a MEMS component. The structure includes a base and a fixed contact; and a flexible arm including a first end and a movable contact, wherein the first end is electrically connecting to the base, and remaining a normally closed electrically conducting state between the movable contact and the fix end.
Abstract:
A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.
Abstract:
A capacitive switch includes: a first conductive cantilever, a second conductive cantilever, a substrate, a coplanar waveguide arranged on the substrate, the coplanar waveguide includes a first conductor configured to transmit an electrical signal, a second conductor and a third conductor are arranged as ground wires on two sides of the first conductor; an insulation medium layer is arranged on the first conductor, a conducting layer is arranged on the insulation medium layer; the first conductive cantilever is connected to the second conductor by using a first fixed end, the second conductive cantilever is connected to the third conductor by using a second fixed end; when a direct-current signal is transmitted on the capacitive switch, a first free end of the first conductive cantilever and a second free end of the second conductive cantilever contact the conducting layer.
Abstract:
A MEMS structure and methods of manufacture. The method includes forming a sacrificial metal layer at a same level as a wiring layer, in a first dielectric material. The method further includes forming a metal switch at a same level as another wiring layer, in a second dielectric material. The method further includes providing at least one vent to expose the sacrificial metal layer. The method further includes removing the sacrificial metal layer to form a planar cavity, suspending the metal switch. The method further includes capping the at least one vent to hermetically seal the planar cavity.
Abstract:
A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a plurality of discrete wires on a substrate. The method further includes forming a sacrificial cavity layer on the discrete wires. The method further includes forming trenches in an upper surface of the sacrificial cavity layer. The method further includes filling the trenches with dielectric material. The method further includes depositing metal on the sacrificial cavity layer and on the dielectric material to form a beam with at least one dielectric bumper extending from a bottom surface thereof.
Abstract:
A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
Abstract:
A micro-electromechanical systems (MEMS) switch having a thermally neutral anchor configuration is provided. The MEMS switch includes a substrate onto which a first conductive pad and a second conductive pad are formed. A first conductive pad anchor is coupled to the first conductive pad and a second conductive anchor spaced from the first conductive anchor is also coupled to the first conductive pad. A conductive cantilever beam has a first end portion that is situated between and coupled to the first and second conductive anchors. Moreover, the conductive cantilever beam has a second end portion that is suspended over the second conductive pad, and a middle portion between the first end portion and the second end portion. The MEMS switch also includes a conductive actuator plate formed on the substrate at a location beneath the middle portion of the conductive cantilever beam and between the first and second conductive pads.
Abstract:
Integrated MEMS switches, design structures and methods of fabricating such switches are provided. The method includes forming at least one tab of sacrificial material on a side of a switching device which is embedded in the sacrificial material. The method further includes stripping the sacrificial material through at least one opening formed on the at least one tab which is on the side of the switching device, and sealing the at least one opening with a capping material.