公开(公告)号：US20230366733A1

公开(公告)日：2023-11-16

申请号：US18195634

申请日：2023-05-10

Applicant: Japan Display Inc.

Inventor： Hiroki SUGIYAMA ,  Takahiro SHOJI ,  Kaoru TAKETA

IPC: G01J1/44

CPC classification number: G01J1/44 ,  G01J2001/446

Abstract: According to an aspect, a detection device includes: a substrate; a photodiode in which a lower electrode, a semiconductor layer, and an upper electrode are stacked on the substrate in the order as listed; a transistor provided in the photodiode; and an insulating layer provided between layers of the transistor and the photodiode. The insulating layer has a contact hole provided in a central portion of the photodiode in plan view. The lower electrode of the photodiode is provided on the insulating layer, is provided continuously in an area overlapping the contact hole, and is electrically coupled to the transistor at a bottom of the contact hole. A first opening is provided in an area of the upper electrode that overlaps the contact hole.

公开(公告)号：US11815395B1

公开(公告)日：2023-11-14

申请号：US18118791

申请日：2023-03-08

Applicant: EXFO Optics, SAS

Inventor： Xavier Lambert

IPC: G01J1/44 ,  H03F3/45

CPC classification number: G01J1/44 ,  H03F3/45475 ,  G01J2001/446

Abstract: There is proposed an optical power measurement circuit and an optical power meter which use a linear amplification circuit based on multiple transimpedance operational amplification lanes and which add a bootstrap circuit and a compensator circuit. 1) The bootstrap is used to reduce the effect of the photodiode capacitance and increases the amplifier's bandwidth. 2) The compensator circuit monitors the photodiode's voltage and reproduces its transient distortions, to then subtract it from the output and thereby reduce the measurement error.

公开(公告)号：US20230349755A1

公开(公告)日：2023-11-02

申请号：US18331035

申请日：2023-06-07

Applicant: Quantum-Si Incorporated

Inventor： Eric A.G. Webster ,  Todd Rearick ,  Thomas Raymond Thurston

IPC: H01L27/146 ,  B01J19/00 ,  G01J1/44 ,  H01L27/148

CPC classification number: G01J1/44 ,  B01J19/0046 ,  H01L27/14683 ,  H01L27/14818 ,  H01L27/14825 ,  B01J2219/00504 ,  B01J2219/00576 ,  B01J2219/00587 ,  B01J2219/00689 ,  B01J2219/00698 ,  G01J2001/446

Abstract: Described herein are techniques that improve the collection and readout of charge carriers in an integrated circuit. Some aspects of the present disclosure relate to integrated circuits having pixels with a plurality of charge storage regions. Some aspects of the present disclosure relate to integrated circuits configured to substantially simultaneously collect and read out charge carriers, at least in part. Some aspects of the present disclosure relate to integrated circuits having a plurality of pixels configured to transfer charge carriers between charge storage regions within each pixel substantially at the same time. Some aspects of the present disclosure relate to integrated circuits having three or more sequentially coupled charge storage regions. Some aspects of the present disclosure relate to integrated circuits capable of increased charge transfer rates. Some aspects of the present disclosure relate to techniques for manufacturing and operating integrated circuits according to the other techniques described herein.

公开(公告)号：US11805709B2

公开(公告)日：2023-10-31

申请号：US16813628

申请日：2020-03-09

Applicant: PsiQuantum Corp.

Inventor： Faraz Najafi

IPC: H10N60/84 ,  G01J1/44 ,  H01L29/43 ,  H01L29/786 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/113 ,  H10N60/10 ,  H10N60/20 ,  H10N60/30 ,  H10N60/35 ,  G01J1/42

CPC classification number: H10N60/84 ,  G01J1/44 ,  H01L29/437 ,  H01L29/78645 ,  H01L31/00 ,  H01L31/022408 ,  H01L31/1136 ,  H10N60/128 ,  H10N60/207 ,  H10N60/30 ,  H10N60/35 ,  G01J1/42 ,  G01J2001/442 ,  G01J2001/446 ,  G01J2001/4473

Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating transistors. In one aspect, a transistor includes: (1) a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and (2) a superconducting component configured to operate in a superconducting state while: (a) a temperature of the superconducting component is below a superconducting threshold temperature; and (b) a first current supplied to the superconducting component is below a current threshold; where: (i) the semiconducting component is located adjacent to the superconducting component; and (ii) in response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first current exceeds the lowered current threshold, thereby transitioning the superconducting component to a non-superconducting state.

公开(公告)号：US20230336030A1

公开(公告)日：2023-10-19

申请号：US18340355

申请日：2023-06-23

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Weipeng JIANG ,  Tao HUANG

IPC: H02J50/23 ,  H02J50/40 ,  G01J1/46

CPC classification number: H02J50/23 ,  H02J50/40 ,  G01J1/46 ,  G01J2001/446

Abstract: This application provides a wireless power transfer unit, device, and method. The wireless power transfer unit includes a radiation source, a light-emitting body, a controller, and a metasurface. The radiation source is configured to emit an electromagnetic wave signal. The controller is configured to control the light-emitting body to provide light sources of different light intensities. The light-emitting body provides the light sources of different light intensities in response to control of the controller. The metasurface is configured to perform phase adjustment on the electromagnetic wave signal that is incident to the metasurface. Equivalent impedance of the metasurface varies with a change of the light intensity, so that an offset of a phase of the electromagnetic wave signal emitted through the metasurface also varies with the change of the light intensity.

公开(公告)号：US11774284B1

公开(公告)日：2023-10-03

申请号：US18295463

申请日：2023-04-04

Applicant: EMINENT ELECTRONIC TECHNOLOGY CORP. LTD.

Inventor： Kao-Pin Wu ,  Yuh-Yuan Wang

IPC: G01J1/42 ,  G01J1/46 ,  G01J1/44

CPC classification number: G01J1/46 ,  G01J1/4204 ,  G01J2001/446

Abstract: A high-sensitivity light sensor includes a light sensing element, a first integrator, a comparator, and a second integrator. The light sensing element senses a light during a measurement time interval to generate a current. The first integrator integrates the current to generate a first integration signal. The comparator compares the first integration signal with a threshold value. While the first integration signal is greater than the threshold value, the comparison signal is at a first level. The second integrator is coupled to the first integrator and integrates the first integration signal to generate a second integration signal. The light sensor of the present invention uses two integrators to integrate the sensed voltage twice. Therefore, the light sensor of the present invention has a higher sensitivity.

公开(公告)号：US11761817B2

公开(公告)日：2023-09-19

申请号：US16321578

申请日：2017-08-01

Applicant: ams International AG

Inventor： Gonggui Xu

IPC: G01J1/42 ,  H03M1/12 ,  G01J1/44 ,  G01J1/46

CPC classification number: G01J1/4204 ,  G01J1/4228 ,  G01J1/46 ,  H03M1/12 ,  G01J2001/4233 ,  G01J2001/446 ,  G01J2001/4426

Abstract: An optical sensor arrangement includes a photodiode, a dummy photodiode, an analog-to-digital converter, a first switch which couples the photodiode to an input of the analog-to-digital converter, and a second switch which couples the dummy photodiode to the input of the analog-to-digital converter.

公开(公告)号：US11757050B2

公开(公告)日：2023-09-12

申请号：US16950618

申请日：2020-11-17

Applicant: Raytheon Company

Inventor： Jamal I. Mustafa

IPC: H01L31/0216 ,  G01J1/04 ,  H01L27/144 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/18 ,  G02B5/00 ,  G02B5/18 ,  G01J1/44

CPC classification number: H01L31/02164 ,  G01J1/0407 ,  G02B5/008 ,  G02B5/1866 ,  H01L27/1446 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/1844 ,  G01J1/44 ,  G01J2001/446

Abstract: A system includes a substrate. The system also includes a detector array disposed over the substrate, where the detector array includes multiple detector pixels. The system further includes multiple plasmonic gratings disposed over top surfaces of the detector pixels, where each plasmonic grating includes multiple convex polyhedrons separated by valleys. Each detector pixel may have a mesa shape, and the convex polyhedrons of the plasmonic gratings may have a smaller size than the mesa shape of the detector pixels. A dimension across a base of each convex polyhedron of the plasmonic gratings may be selected based on a desired resonance wavelength of the plasmonic gratings.

公开(公告)号：US20230280206A1

公开(公告)日：2023-09-07

申请号：US18315775

申请日：2023-05-11

Applicant: ARTILUX, INC.

Inventor： YEN-CHENG LU ,  YUN-CHUNG NA ,  SHU-LU CHEN ,  CHIEN-YU CHEN ,  SZU-LIN CHENG ,  CHUNG-CHIH LIN ,  YU-HSUAN LIU

IPC: G01J1/44 ,  H01L31/101

CPC classification number: G01J1/44 ,  H01L31/1013 ,  G01J2001/446

Abstract: A photodetecting device is provided. The photodetecting device includes a silicon substrate, a germanium absorption region, and a plurality of microstructures. The silicon substrate includes a first surface and a second surface. The germanium absorption region is formed proximal to the first surface of the silicon substrate, and the germanium absorption region is configured to absorb photons and to generate photo-carriers. The plurality of microstructures are formed over the second surface of the silicon substrate, and the plurality of microstructures are configured to direct an optical signal towards the germanium absorption region. A system including an optical transmitter and an optical receiver is also provided.

公开(公告)号：US20230261011A1

公开(公告)日：2023-08-17

申请号：US18305435

申请日：2023-04-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang

IPC: H01L27/146 ,  G01J1/44 ,  G01J1/02

CPC classification number: H01L27/14603 ,  G01J1/44 ,  G01J1/0271 ,  H01L27/14649 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14623 ,  G01J2001/446

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a first photodetector disposed in a first pixel region of a semiconductor substrate and a second photodetector disposed in a second pixel region of the semiconductor substrate. The second photodetector is laterally separated from the first photodetector. A first diffuser is disposed along a back-side of the semiconductor substrate and over the first photodetector. A second diffuser is disposed along the back-side of the semiconductor substrate and over the second photodetector. A first midline of the first pixel region and a second midline of the second pixel region are both disposed laterally between the first diffuser and the second diffuser.