公开(公告)号：US07196463B2

公开(公告)日：2007-03-27

申请号：US10911601

申请日：2004-08-05

Applicant: Makoto Okai ,  Takahiko Muneyoshi ,  Tomio Yaguchi ,  Nobuaki Hayashi

Inventor： Makoto Okai ,  Takahiko Muneyoshi ,  Tomio Yaguchi ,  Nobuaki Hayashi

IPC: H01J1/62 ,  H01J1/00

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/30469

Abstract: The present invention provides an emissive flat panel display device which is capable of performing a gate operation at a relatively low voltage of several V to several tens V using gate electrodes. In the emissive flat panel display device which includes a back panel which is constituted of a back substrate on which cathode electrodes having electron sources formed of carbon nanotubes and gate electrodes are formed, a face panel which forms phosphors and anode electrodes thereon, and a sealing frame which seals the back panel and the face panel, the difference between an electric field strength Emax for allowing the electron sources to obtain the required maximum emission current density and an electric field strength Emin which becomes the minimum emission current density is set to 1V/μm or less, and preferably 0.5V/μm or less.

Abstract translation: 本发明提供一种发射平板显示装置，其能够使用栅电极在几V至几十V的较低电压下进行栅极操作。 在包括后面板的发光平板显示装置中，背面板由背面基板构成，在背面基板上形成有由碳纳米管和栅电极形成的电子源的阴极，在其上形成荧光体和阳极电极的面板和密封件 框架，其密封后面板和面板，使电子源获得所需的最大发射电流密度的电场强度Emax与成为最小发射电流密度的电场强度Emin之间的差设定为1V / 以下，优选为0.5V / mum以下。

公开(公告)号：US07176614B2

公开(公告)日：2007-02-13

申请号：US10706984

申请日：2003-11-14

Applicant: Soo-Joung Lee ,  Hun-Young Kim

Inventor： Soo-Joung Lee ,  Hun-Young Kim

IPC: H01J1/70

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469

Abstract: A flat panel display device includes a first substrate, an electron emission assembly formed on the first substrate, a second substrate provided at a predetermined distance from the first substrate and forming a vacuum assembly with the first substrate, and an illumination assembly formed on the second substrate, the illumination assembly being illuminated by electrons emitted from the electron emission assembly. The illumination assembly includes at least one anode electrode formed on a surface of the second substrate facing the first substrate, phosphor layers formed in a predetermined pattern on the at least one anode electrode, and conductive layers formed of a carbon-based material on the phosphor layers.

Abstract translation: 平板显示装置包括第一基板，形成在第一基板上的电子发射组件，设置在距离第一基板预定距离并与第一基板形成真空组件的第二基板，以及形成在第二基板上的照明组件 衬底，照明组件被从电子发射组件发射的电子照射。 所述照明组件包括形成在所述第二基板的面对所述第一基板的表面上的至少一个阳极电极，在所述至少一个阳极电极上以预定图案形成的荧光体层，以及由所述荧光体上的碳基材料形成的导电层 层。

公开(公告)号：US07175494B1

公开(公告)日：2007-02-13

申请号：US10600226

申请日：2003-06-19

Applicant: Sung Gu Kang ,  Woo Kyung Bae ,  Jung Jae Kim

Inventor： Sung Gu Kang ,  Woo Kyung Bae ,  Jung Jae Kim

IPC: H01J9/04

CPC classification number: H01J9/025 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01J2201/30469

Abstract: An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300° C. to 500° C. compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.

Abstract translation: 另一方面，电子发射器件包含图案化成位于电子发射元件之间的多个横向分开的部分的垂直发射极，另一方面，衬底。 包含碳纳米管的电子发射元件在与下面的基底的热应力相容的300℃至500℃的温度范围内生长。 电子发射元件在颗粒化的催化剂层上生长，其在如此低的温度范围内提供用于生长电子发射元件的大的表面积。 为了确保碳纳米管的生长均匀性，将颗粒状基材浸入预生长等离子体气体中以增强用于碳扩散的颗粒状基材的表面扩散性能。

公开(公告)号：US07173366B2

公开(公告)日：2007-02-06

申请号：US10916616

申请日：2004-08-12

Applicant: Jun-Hee Choi ,  Andrei Zoulkarneev

Inventor： Jun-Hee Choi ,  Andrei Zoulkarneev

IPC: H01J9/12 ,  H01J1/62 ,  H01J19/06 ,  H01J1/02 ,  H01J1/00

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J3/021 ,  H01J9/025 ,  H01J9/148 ,  H01J29/481 ,  H01J2201/30469

Abstract: Provided is a field emission display (FED) with a carbon nanotube emitter and a method of manufacturing the same. A gate stack that surrounds the CNT emitter has a mask layer that covers an emitter electrode adjacent to the CNT emitter, and a gate insulating film, a gate electrode, a focus gate insulating film (SiOx, X

Abstract translation: 提供了具有碳纳米管发射体的场致发射显示器（FED）及其制造方法。 围绕CNT发射器的栅极堆叠具有覆盖与CNT发射极相邻的发射极的掩模层，以及栅极绝缘膜，栅极电极，聚焦栅极绝缘膜（SiO x X，X <2），以及形成在掩模层上的聚焦栅电极。 聚焦栅极绝缘膜的厚度为2μm以上，优选为3〜15μm，优选使用PECVD制造。 用于形成聚焦栅极绝缘膜和/或栅极绝缘膜的硅烷和硝酸的流量分别保持在50〜700sccm和700〜4,500sccm。 通过这样做，并且通过使氧化物变厚，氧化物不易开裂，因此不太容易产生泄漏电流。

公开(公告)号：US20070018559A1

公开(公告)日：2007-01-25

申请号：US11184991

申请日：2005-07-20

Applicant: Jeng-Ywan Jeng

Inventor： Jeng-Ywan Jeng

IPC: H01J1/62 ,  H01J63/04

CPC classification number: H01J63/06 ,  B82Y10/00 ,  G03G15/04072 ,  G03G15/326 ,  G03G2215/0409 ,  H01J2201/30469

Abstract: Several ways are proposed to protect a field emission illumination device of a printer light source device. A two-terminal field emission light source structure makes use of carbon nanotubes as an electron emitter to be used as an exposure light source component of an optical printer head. The printer light source device has a low manufacturing cost, and can be matched with a photosensitive drum structure. The printer light source device is characterized by a casing coating and a light guide device to realize a light source of low cost and high efficiency.

Abstract translation: 提出了几种保护打印机光源装置的场致发射照明装置的方法。 两端场致发射光源结构利用碳纳米管作为电子发射体用作光学打印机头的曝光光源组件。 打印机光源装置的制造成本低，并且可以与感光鼓结构相匹配。 打印机光源装置的特征在于具有壳体涂层和导光装置，以实现低成本和高效率的光源。

公开(公告)号：US20070007872A1

公开(公告)日：2007-01-11

申请号：US11449737

申请日：2006-06-09

Applicant: Young-Jun Park ,  Ha-Jin Kim

Inventor： Young-Jun Park ,  Ha-Jin Kim

IPC: H01J1/14 ,  H01J19/06 ,  H01K1/04

CPC classification number: H01J29/481 ,  B82Y10/00 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00

Abstract: A Field Emission Device (FED) having a ring-shaped emitter and its method of manufacture includes a ring-shaped emitter formed on a cathode exposed through an aperture of a gate electrode, has a shape corresponding to a shape of the aperture of the gate electrode, and has carbon nanotubes on edges thereof. The ring-shaped emitter is formed through an annealing process that controls the diffusion of a catalyst metal and silicon between a catalyst metal layer and a silicon layer.

Abstract translation: 具有环形发射体的场发射装置（FED）及其制造方法包括形成在通过栅电极的孔暴露的阴极上的环形发射体，具有与栅极的孔的形状相对应的形状 电极，并且在其边缘上具有碳纳米管。 通过退火工艺形成环形发射体，该退火工艺控制催化剂金属和硅在催化剂金属层和硅层之间的扩散。

公开(公告)号：US20060292716A1

公开(公告)日：2006-12-28

申请号：US11329849

申请日：2006-01-11

Applicant: Shiqun Gu ,  James Elmer ,  Peter Burke

Inventor： Shiqun Gu ,  James Elmer ,  Peter Burke

IPC: H01L21/00

CPC classification number: G11C13/02 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/0455 ,  H01L21/76838 ,  H01L21/76879 ,  H01L2221/1094

Abstract: Disclosed is a method of making a CNT device such as a memory switch, a field emission display, interconnect wiring, etc. The method includes steps of providing CNTs in contact with an electrode and selectively growing or depositing a layer of metal on top of the CNTs and the electrode. The layer of metal improves the electrical contact between the CNTs and the electrode. If a CNT memory switch is provided, the electrode can be embedded into dielectric or may lie on top of a dielectric substrate. In the case of interconnect wiring, an electrode can be provided embedded in dielectric and a via may be provided to the electrode. CNTs are disposed in the via, and the method provides that metal is selectively grown or deposited in the via, in contact with the CNTs and the electrode, thereby providing good electrical contact between the CNTs and the electrode.

Abstract translation: 公开了一种制造诸如存储器开关，场致发射显示器，互连布线等的CNT器件的方法。该方法包括以下步骤：提供与电极接触的CNT并选择性地生长或沉积金属层 碳纳米管和电极。 金属层改善了CNT和电极之间的电接触。 如果提供CNT存储器开关，则电极可以嵌入电介质中，或者可以位于电介质衬底的顶部。 在互连布线的情况下，可以将电极设置在电介质中，并且可以向电极提供通孔。 CNT布置在通孔中，并且该方法提供金属选择性地生长或沉积在与CNT和电极接触的通孔中，从而在CNT和电极之间提供良好的电接触。

公开(公告)号：US07144287B2

公开(公告)日：2006-12-05

申请号：US11268061

申请日：2005-11-07

Applicant: Michael A. Guillorn ,  Timothy Eric McKnight ,  Vladimir I. Merkulov ,  Anatoli Vasilievich Melechko ,  Michael Leon Simpson

Inventor： Michael A. Guillorn ,  Timothy Eric McKnight ,  Vladimir I. Merkulov ,  Anatoli Vasilievich Melechko ,  Michael Leon Simpson

IPC: H01J9/00 ,  H01J9/24

CPC classification number: D01F9/127 ,  B82Y30/00 ,  G01N27/308 ,  G01N33/48707 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/939

Abstract: Systems and methods are described for individually electrically addressable carbon nanofibers on insulating substrates. A method includes forming an electrically conductive interconnect on at least a part of an insulating surface on a substrate; and growing at least one fiber that is coupled to the electrically conductive interconnect.

Abstract translation: 描述了用于绝缘基板上的单独可电寻址的碳纳米纤维的系统和方法。 一种方法包括在衬底上的绝缘表面的至少一部分上形成导电互连; 以及生长耦合到导电互连的至少一个光纤。

公开(公告)号：US20060244364A1

公开(公告)日：2006-11-02

申请号：US11476045

申请日：2006-06-28

Applicant: Masayuki Nakamoto

Inventor： Masayuki Nakamoto

IPC: H01J63/04 ,  H01J1/62

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/939 ,  Y10T428/30 ,  Y10T428/31678

Abstract: A field emission type cold cathode device comprises a substrate, and a metal plating layer formed on the substrate, the metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, the carbon structure is stuck out from the metal plating layer and a part of the carbon structure is buried in the metal plating layer.

公开(公告)号：US20060238096A1

公开(公告)日：2006-10-26

申请号：US11346216

申请日：2006-02-03

Applicant: In-Taek Han ,  Ha-Jin Kim

Inventor： In-Taek Han ,  Ha-Jin Kim

IPC: H01J1/00 ,  H01J63/04

CPC classification number: H01J9/025 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01J1/304 ,  H01J2201/30469 ,  H01J2329/00

Abstract: In a carbon nanotube (CNT) structure and a method of manufacturing the CNT structure, and in a field emission display (FED) device using the CNT structure and a method of manufacturing the FED device, the CNT structure includes a substrate, a plurality of buffer particles having a predetermined size coated on the substrate, a plurality of catalyst layers formed on surfaces of the buffer particles by annealing a catalyst material deposited on the substrate to a predetermined thickness so as to cover the buffer particles, and a plurality of CNTs grown from the catalyst layers.

Abstract translation: 在碳纳米管（CNT）结构和CNT结构的制造方法中，在使用CNT结构的场发射显示（FED）装置和FED装置的制造方法中，CNT结构包括基板，多个 通过将沉积在基板上的催化剂材料退火至预定厚度以覆盖缓冲颗粒的多个催化剂层，形成在缓冲颗粒的表面上的多个催化剂层，以及多个CNT生长 从催化剂层。