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    IMAGE ACQUISITION APPARATUS, IMAGE ACQUISITION METHOD AND DEFECT INSPECTION APPARATUS
    131.
    发明申请
    IMAGE ACQUISITION APPARATUS, IMAGE ACQUISITION METHOD AND DEFECT INSPECTION APPARATUS 审中-公开
    图像获取装置，图像采集方法和缺陷检查装置

    公开(公告)号：US20150041645A1

    公开(公告)日：2015-02-12

    申请号：US14453099

    申请日：2014-08-06

    Applicant: KABUSHIKI KAISHA TOSHIBA ,  EBARA CORPORATION

    Inventor： Susumu IIDA ,  Ryoichi HIRANO ,  Hidehiro WATANABE ,  Masahiro HATAKEYAMA

    IPC: H01J37/24 ,  H01J37/26

    CPC classification number: H01J37/241 ,  H01J37/265 ,  H01J37/29 ,  H01J2237/047 ,  H01J2237/226

    Abstract: According to one embodiment, an image acquisition apparatus includes an electron beam source configured to generate an electron beam to be radiated onto an object to be measured, an image detecting unit configured to detect an electronic image of the object based on the electron beam radiated from the electron beam source onto the object, and a voltage modulating unit configured to modulate at least one of a voltage to be applied to the electron beam source and a voltage to be applied to the object.

    Abstract translation: 根据一个实施例，一种图像获取装置包括：电子束源，被配置为产生要被辐射到被测量物体上的电子束;图像检测单元，被配置为基于从所述电子束辐射的电子束来检测物体的电子图像; 电子束源到物体上，电压调制单元被配置为调制要施加到电子束源的电压和要施加到物体的电压中的至少一个。

    CURRENT LIMITER FOR HIGH VOLTAGE POWER SUPPLY USED WITH ION IMPLANTATION SYSTEM
    132.
    发明申请
    CURRENT LIMITER FOR HIGH VOLTAGE POWER SUPPLY USED WITH ION IMPLANTATION SYSTEM 有权
    用于离子植入系统使用的高压电源的电流限制

    公开(公告)号：US20130020940A1

    公开(公告)日：2013-01-24

    申请号：US13187905

    申请日：2011-07-21

    Applicant: Klaus Becker ,  Klaus Petry ,  Piotr Lubicki

    Inventor： Klaus Becker ,  Klaus Petry ,  Piotr Lubicki

    IPC: H01J7/44

    CPC classification number: H01J37/241 ,  H01J27/022 ,  H01J37/3171 ,  H01J2237/0203 ,  H01J2237/0206 ,  H02H9/02

    Abstract: Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly.

    Abstract translation: 公开了一种用于离子源组件的浪涌保护系统。 该系统包括与热离子二极管和离子源组件串联耦合的高压电源。 高压电源封装在压力罐中并驱动离子源组件。 热离子二极管包括设置在离子源组件外壳和高压电源的输出之间的绝缘管，并且利用现有的离子源组件部件来限制离子源组件的电弧故障期间对电源的损坏。

    APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE
    133.
    发明申请
    APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE 失效
    检测半导体器件缺陷的装置和方法

    公开(公告)号：US20120080597A1

    公开(公告)日：2012-04-05

    申请号：US13226757

    申请日：2011-09-07

    Applicant: Ji-Young SHIN ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

    Inventor： Ji-Young SHIN ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

    IPC: G01N23/22

    CPC classification number: H01J37/241 ,  H01J37/265 ,  H01J37/28 ,  H01L22/12

    Abstract: An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.

    Abstract translation: 检查基板缺陷的装置和方法。 由于衬底的底层的凹部比顶层的突起更暗，所以下层的二次电子信号（SEM）的值与顶层的值的比可以增加到 改善用于检查下层缺陷的图案图像。 可以设置照射电子束的几个条件，并且可以在这种条件下扫描图案。 可以根据条件生成二次电子信号，并将其转换为图像数据以显示各种图案图像。 关于图像的扫描信息可以与基板上的位置信息一起存储。 可以计算关于图案图像的每个扫描信息以生成新的集成图像。

    APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE
    136.
    发明申请
    APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE 失效
    检测半导体器件缺陷的装置和方法

    公开(公告)号：US20100136717A1

    公开(公告)日：2010-06-03

    申请号：US12627222

    申请日：2009-11-30

    Applicant: Ji-Young SHIN ,  Young-Nam Kim ,  Jong-An KIM ,  Hyung-Suk CHO ,  Yu-Sin YANG

    Inventor： Ji-Young SHIN ,  Young-Nam Kim ,  Jong-An KIM ,  Hyung-Suk CHO ,  Yu-Sin YANG

    IPC: H01L21/66 ,  G01N23/00 ,  G06F19/00

    CPC classification number: H01J37/241 ,  H01J37/265 ,  H01J37/28 ,  H01L22/12

    Abstract: An apparatus and method to inspect a defect of a semiconductor device. The amount of secondary electrons generated due to a scanning electron microscope (SEM) may depend on the topology of a pattern of a semiconductor substrate. The amount of secondary electrons emitted from a recess of an under layer is far smaller than that of secondary electrons emitted from a projection of a top layer. Since the recess is darker than the projection, a ratio of a value of a secondary electron signal of the under layer to a value of a secondary electron signal of the top layer may be increased in order to improve a pattern image used to inspect a defect in the under layer. To do this, a plurality of conditions under which electron beams (e-beams) are irradiated may be set, at least two may be selected out of the set conditions, and the pattern may be scanned under the selected conditions. Thus, secondary electron signals may be generated according to the respective conditions and converted into image data so that various pattern images may be displayed on a monitor. Scan information on the pattern images may be automatically stored in a computer storage along with positional information on a predetermined portion of the semiconductor substrate. When calculation conditions are input to a computer, each of scan information on the pattern images may be calculated to generate a new integrated pattern image.

    Abstract translation: 一种用于检查半导体器件的缺陷的装置和方法。 由扫描电子显微镜（SEM）产生的二次电子量可能取决于半导体衬底图案的拓扑结构。 从下层的凹部发射的二次电子的量远远小于从顶层的投影发射的二次电子的量。 由于凹部比投影更暗，所以可以增加下层的二次电子信号的值与顶层的二次电子信号的值的比例，以便改善用于检查缺陷的图案图像 在下层。 为此，可以设置照射电子束（电子束）的多个条件，可以从设定条件中选择至少两个，并且可以在所选择的条件下扫描图案。 因此，可以根据各自的条件生成二次电子信号，并将其转换为图像数据，从而可以在监视器上显示各种图案图像。 关于图案图像的扫描信息可以与位于半导体基板的预定部分上的位置信息一起自动存储在计算机存储器中。 当将计算条件输入到计算机时，可以计算每个关于图案图像的扫描信息，以生成新的集成图案图像。

    Electron gun used in an electron beam exposure apparatus
    139.
    发明授权
    Electron gun used in an electron beam exposure apparatus 有权
    用于电子束曝光装置的电子枪

    公开(公告)号：US06252344B1

    公开(公告)日：2001-06-26

    申请号：US09335398

    申请日：1999-06-17

    Applicant: Yoshihisa Ooae ,  Takamasa Satoh ,  Akio Yamada ,  Hiroshi Yasuda

    Inventor： Yoshihisa Ooae ,  Takamasa Satoh ,  Akio Yamada ,  Hiroshi Yasuda

    IPC: H01J2976

    CPC classification number: H01J37/241 ,  H01J2237/3175

    Abstract: An electron gun, preferably a four-pole electron gun, used in an electron beam exposure apparatus is formed by: a cathode for emitting an electron beam when supplying a negative and high-accelerated voltage; a first grid provided downstream of the cathode for focusing a crossover image of the electron beam when supplying a voltage which becomes a reverse bias for the cathode, and the cathode and the first grid being arranged at a high voltage side of a high voltage insulator; an anode for collecting the electron beam which passes through the first grid, and being arranged at a low voltage side of the high voltage insulator; and a second grid provided at the high voltage side of the high voltage insulator and between the first grid and the anode, and having an aperture for limiting an amount of the electron beam passing therethrough. A voltage which becomes a forward bias for the cathode is supplied to the second grid, and the crossover image is focused at the aperture of the second grid.

    Abstract translation: 电子束曝光装置中使用的优选四极电子枪的电子枪是通过以下方式形成的：用于在提供负高和高加速电压时发射电子束的阴极; 设置在阴极的下游的第一栅极，用于在提供成为阴极的反向偏压的电压时使聚焦电子束的交叉图像，并且阴极和第一栅极布置在高压绝缘体的高压侧; 用于收集通过第一栅格的电子束并且布置在高压绝缘体的低电压侧的阳极; 以及设置在高压绝缘子的高压侧和第一栅极与阳极之间的第二栅极，并且具有用于限制通过其中的电子束的量的孔。 成为阴极的正向偏压的电压被提供给第二栅极，并且交叉图像聚焦在第二栅极的孔径处。

    High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs
    140.
    发明授权
    High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs 失效
    在负载产生的电弧中具有动态电压调节和去耦的高压直流 - 直流转换器

    公开(公告)号：US5418707A

    公开(公告)日：1995-05-23

    申请号：US867639

    申请日：1992-04-13

    Applicant: Daniel W. Shimer ,  Arnold C. Lange

    Inventor： Daniel W. Shimer ,  Arnold C. Lange

    IPC: H01J37/248 ,  H01J37/24 ,  H01L21/027 ,  H02H7/00 ,  H02J1/00 ,  H02M3/28 ,  H02M3/337 ,  H02M7/08 ,  H02M7/12 ,  H02M7/537

    CPC classification number: H01J37/241 ,  H02H7/00 ,  H02M3/3376 ,  Y10T307/582 ,  Y10T307/707

    Abstract: A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

    Abstract translation: 大功率电源在变化和电弧负载下产生可控的恒定高压输出。 电源包括电压调节器，电感器，用于产生交流极性的高频方波电流的逆变器，改进的逆变器电压钳位电路，升压变压器，用于在每个输出端产生直流电压的输出整流器 模块和用于感测输出电流的电流传感器。 电源还通过控制电压调节器占空比提供对变化负载的动态响应，并且提供用于感测电源输出端处的初始电弧电流的电路，以同时将电源电路与电弧负载分离。 电源包括多个分立开关型dc-dc转换器模块。

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