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公开(公告)号：US12062525B2
公开(公告)日：2024-08-13
申请号：US17679900
申请日：2022-02-24
Applicant: PSK INC.
Inventor： Jong Chan Lee , Ju Young Park , Jun Young Cho , Hyeon Gyeong Shin
IPC: H01J37/32 , H01L21/687
CPC classification number: H01J37/32715 , H01J37/32568 , H01J37/32816 , H01L21/68742 , H01J2237/0206 , H01J2237/20235 , H01J2237/334
Abstract: A substrate treating apparatus includes a housing, treating space and support unit to support a substrate, dielectric plate, gas supply unit, and plasma source to generate a plasma and including a top edge electrode above the edge region supported by the support unit and bottom edge electrode below the edge region supported by the support unit, which includes a support plate having an inner space and vacuum hole that communicates with the inner space and sucking the substrate on the top surface. A lift pin assembly can transfer the substrate between an outside transfer unit and the support plate. A decompression unit can apply negative pressure to the inner space. The lift pin assembly includes a base plate and through hole penetrating the base plate to provide negative pressure in a region under the base plate to a region over the base plate. Lift pins protrude from the base plate and support a bottom substrate surface. A driver can lift/lower the base plate within the inner space.
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公开(公告)号：US11804367B2
公开(公告)日：2023-10-31
申请号：US17221891
申请日：2021-04-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seok Hwan Bae , Dong Hoon Kim , Byeong Sang Kim , Hak Young Kim , Hee Won Min
IPC: H01J37/32 , H01L21/687 , H01L21/683
CPC classification number: H01J37/32642 , H01J37/32633 , H01J37/32715 , H01L21/6833 , H01L21/68735 , H01J2237/0206 , H01J2237/2007 , H01J2237/334
Abstract: Provided is plasma processing equipment comprising a substrate support, a focus ring disposed along an edge of the upper surface of the substrate support and including a fluid hole passing through a main body, an insulating ring surrounding an outer sidewall of the substrate support and including an inner side surface facing the outer sidewall of the substrate support, an outer side surface, and an upper surface connecting the inner and outer side surfaces, and including upper and lower end portions having different heights, and a connection end portion connecting the upper and lower end portions, a liner surrounding the outer side surface of the insulating ring and a baffle disposed on an upper surface of the liner, wherein a fluid passing through the fluid hole flows along the upper surface, and the baffle generates a pressure difference of the fluid between the upper and lower end portions.
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公开(公告)号：US11803118B2
公开(公告)日：2023-10-31
申请号：US17228451
申请日：2021-04-12
Applicant: Applied Materials, Inc.
Inventor： Banqiu Wu , Khalid Makhamreh , Eliyahu Shlomo Dagan
CPC classification number: G03F1/82 , B08B7/0035 , B08B13/00 , H01J37/3244 , H01J37/32082 , H01J37/3299 , H01J37/32825 , H01J37/32972 , H01J2237/0206 , H01J2237/335
Abstract: Methods and apparatus leverage dielectric barrier discharge (DBD) plasma to treat samples for surface modification prior to photomask application and for photomask cleaning. In some embodiments, a method of treating a surface with AP plasma includes igniting plasma over an ignition plate where the AP plasma is formed by one or more plasma heads of an AP plasma reactor positioned above the ignition plate, monitoring characteristics of the AP plasma with an optical emission spectrometer (OES) sensor to determine if stable AP plasma is obtained and, if so, moving the AP reactor over a central opening of an assistant plate where the central opening contains a sample under treatment and where the assistant plate reduces AP plasma arcing on the sample during treatment. The AP reactor scans back and forth over the central opening of the assistant plate while maintaining stabilized AP plasma to treat the sample.
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公开(公告)号：US20180269033A1
公开(公告)日：2018-09-20
申请号：US15463473
申请日：2017-03-20
Inventor： Frank Sinclair , Daniel Tieger , Klaus Becker
IPC: H01J37/317 , H01J37/08 , H01J37/20
CPC classification number: H01J37/3171 , H01J37/08 , H01J37/20 , H01J2237/006 , H01J2237/0206 , H01J2237/0475
Abstract: An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.
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公开(公告)号：US20180044780A1
公开(公告)日：2018-02-15
申请号：US15791110
申请日：2017-10-23
Applicant: Roman Chistyakov , Bassam Hanna Abraham
Inventor： Roman Chistyakov , Bassam Hanna Abraham
CPC classification number: C23C14/3414 , C23C14/3485 , C23C14/35 , C23C14/564 , H01J37/32009 , H01J37/32018 , H01J37/3408 , H01J37/3444 , H01J2237/0206
Abstract: A plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. A pulsed power supply comprising at least two solid state switches and having an output that is electrically connected between the anode and the cathode assembly generates voltage micropulses. A pulse width and a duty cycle of the voltage micropulses are generated using a voltage waveform comprising voltage oscillation having amplitudes and frequencies that generate a strongly ionized plasma.
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Patent Agency Ranking
公开(公告)号：US09875874B2
公开(公告)日：2018-01-23
申请号：US15341699
申请日：2016-11-02
Inventor： Rainer Labitzke , Severin Dominok , Gösta Mattausch , Stefan Weiss
IPC: H01J29/98
CPC classification number: H01J29/98 , H01J37/24 , H01J2237/0206 , H01J2237/06366 , H01J2237/3132
Abstract: An apparatus for suppression of arcs in an electron beam generator including: a first module providing an operating voltage; a second module including a coil suitable for a voltage of at least 10 kV, and at least one free-wheeling diode connected in parallel to the coil; a third module including a first circuit component configured to detect a first actual value for electric voltage, and a first signal is producible when the first actual value falls below a first threshold value, a second circuit component by which a second actual value for electric current is detectable, and a second signal is generated when the second actual value exceeds a second threshold value, a control logic, which optionally links the first and second signals and a resultant output signal is producible; a semiconductor-based switch suitable for the voltage of at least 10 kV, which is opened based on the output signal.
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公开(公告)号：US09818584B2
公开(公告)日：2017-11-14
申请号：US14325146
申请日：2014-07-07
Applicant: FEI Company
Inventor： Thomas G. Miller , Shouyin Zhang
CPC classification number: H01J37/32651 , H01J37/08 , H01J37/321 , H01J37/32504 , H01J2237/0206 , H01J2237/026 , H01J2237/31749
Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.
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公开(公告)号：US09673028B2
公开(公告)日：2017-06-06
申请号：US15095745
申请日：2016-04-11
Applicant: Advanced Energy Industries, Inc.
Inventor： Hendrik Walde , Joshua Brian Pankratz , David Christie , Brian D. Kowal
CPC classification number: H01J37/32944 , H01J37/24 , H01J37/244 , H01J2237/0206 , H01J2237/244 , H05H1/24 , H05H1/36 , H05H1/48 , H05H2001/3494
Abstract: Systems and methods for arc handling in plasma processing operations are disclosed. The method includes providing current with a power supply to a plasma load at a first voltage polarity and energizing an energy storage device so when it is energized, the energy storage device applies a reverse polarity voltage that has a magnitude that is as least as great as the first voltage polarity. When an arc is detected, power is applied from the energy storage device to the plasma load with a reverse polarity voltage that has a polarity that is opposite of the first voltage polarity, the application of the reverse polarity voltage to the plasma load decreases a level of the current that is provided to the plasma load.
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公开(公告)号：US09484189B2
公开(公告)日：2016-11-01
申请号：US13191960
申请日：2011-07-27
Applicant: Markus Winterhalter , Peter Wiedemuth
Inventor： Markus Winterhalter , Peter Wiedemuth
CPC classification number: H01J37/32431 , H01J2237/0206
Abstract: An arc discharge detection device is used for detecting arc discharges in a plasma process. The arc discharge detection device includes a comparator configured to emit an arc discharge detection signal and receive an instantaneous value of the signal or a signal proportional thereto, a minimum or maximum value detection device configured to receive the signal and to determine a minimum or maximum value of the signal within a predetermined time period, a setting means configured to receive the minimum or maximum value and to generate a reference signal from the minimum or maximum value, such that the reference signal is supplied to the comparator, and such that the comparator changes the signal level of the arc discharge detection signal when the comparator detects that the instantaneous value has reached the reference signal.
Abstract translation: 电弧放电检测装置用于检测等离子体工艺中的电弧放电。 电弧放电检测装置包括：比较器，被配置为发射电弧放电检测信号并接收信号或与其成比例的信号的瞬时值;最小值或最大值检测装置，被配置为接收信号并确定最小或最大值 的设定装置，被配置为从所述最小值或最大值接收所述最小值或最大值并产生参考信号，使得所述参考信号被提供给所述比较器，并且使得所述比较器改变 当比较器检测到瞬时值已经达到参考信号时，电弧放电检测信号的信号电平。
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10.发明申请公开(公告)号：US20150008213A1
公开(公告)日：2015-01-08
申请号：US14325146
申请日：2014-07-07
Applicant: FEI Company
Inventor： Thomas G. Miller , Shouyin Zhang
IPC: H01J37/32
CPC classification number: H01J37/32651 , H01J37/08 , H01J37/321 , H01J37/32504 , H01J2237/0206 , H01J2237/026 , H01J2237/31749
Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.
Abstract translation: 用于聚焦带电粒子束系统的电感耦合等离子体源包括在等离子体室内的导电屏蔽，以便减少与等离子体的电容耦合。 通过偏置电极或等离子体将内部导电屏蔽层保持在与等离子体源大致相同的电位。 内部屏蔽允许在等离子体室的外部使用更多种类的冷却方法。
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