Abstract:
The present invention relates to a luminescent glass element comprising a luminescent glass substrate, which a metal layer is positioned on a surface thereof. The metal layer is provided with a metal microstructure. The luminescent glass substrate has composite oxides represented as the following formula: aM2O.bY2O3.cSiO2.dPr2O3, wherein M represents alkali metal element, a, b, c and d are, by mol part, 25-60, 1-30, 20-70 and 0.001-10 respectively. The present invention also provides a producing method of the luminescent glass element and a luminescing method thereof. The metal layer is positioned on the luminescent glass substrate, thereby improving luminescence efficiency of the luminescent glass substrate. The luminescent glass element can be used in luminescent devices with ultrahigh brightness or high-speed operation.
Abstract:
In order to provide a phosphor for a low-voltage electron beam and a vacuum fluorescent display apparatus in which the phosphor is used, a deposition layer is formed on a surface of a main body of a phosphor shown by the following chemical formula (1), the deposition layer being a plurality of oxide layers sequentially deposited on the surface of the phosphor main body. The phosphor for a low-voltage electron beam contains no cadmium, but has exceptional high-temperature exposure characteristics, as well as prolonged service life and higher brightness. Ca1-xSrxTiO3:Pr,M (1) where M is at least one element selected from Al, Ga, In, Mg,Zn, Li, Na, K, Gd, Y, La, Cs, and Rb; and 0≦x≦1.
Abstract:
A large-area and high-luminance deep ultraviolet light source device is provided under circumstances where the scales of existing mercury lamps used as ultraviolet light sources cannot be reduced and light-emitting diodes of 365 nm or less do not reach the practical level. The deep ultraviolet light source device comprises at least an anode substrate having an ultraviolet phosphor thin film doped with rare-earth metal ions such as gadolinium (Gd) ions and containing with aluminum nitride as the host material, a cathode substrate having a field electron emission material thin film, a spacer for holding the anode substrate and the cathode substrate opposite to each other and maintaining the space between the substrates in a vacuum atmosphere, and a voltage circuit for applying an electric field to the space between the anode substrate and the cathode substrate. Light is emitted by injecting electrons from the field electron emission material thin film into the ultraviolet phosphor thin film by applying the electric field to the space between the substrates and maintaining the space between the anode substrate and the cathode substrate as a vacuum channel region.
Abstract:
A field emission light source includes a substrate, a cathode conductive layer, a plurality of electron emitters, a transparent substrate, an anode layer and a fluorescent layer. The cathode conductive layer is formed on the substrate. The electron emitters are disposed on the cathode conductive layer. The transparent substrate is spaced from the cathode conductive layer. The anode layer is formed on the transparent substrate facing the electron emitters and includes a carbon nanotube film structure having carbon nanotubes arranged in a preferred orientation. The fluorescent layer is formed on the anode layer facing the electron emitters.
Abstract:
A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.
Abstract:
The present invention relates to a device with electron beam excitation for making a white light source. The device with electron beam excitation comprises: an electron emissive layer for providing an electron beam; and a fluorescent layer comprising a fluorescent powder, wherein the fluorescent powder comprises at least four elements of Zn, S, Se and O. The fluorescent layer can be excited by an electron beam and then emit white light. Accordingly, the present invention can provide a white light source with high color rendering index.
Abstract:
An enhanced plane light source has a luminescent layer independently disposed in each recess formed on a light-transmittable substrate, so that field emission electrons directly impact the luminescent layer to produce light, which is not shielded by the cathode. The enhanced plane light source also includes a substrate forming a bottom structure thereof. The bottom substrate has a metal reflection surface to increase the reflectivity and upgrade light-emitting efficiency and luminous intensity. The recesses on the light-transmittable substrate have an approximate semi-circular or semi-parabolic cross section to increase the high field region at the cathode and the effective luminescent area at the anode, so that the luminous intensity and evenness are also largely increased.
Abstract:
A field emission light source includes a foundation, a supporting member, a transparent shell, an anode, and a cathode. The transparent shell is disposed on the foundation, and thus defines a closed space in the transparent shell. The supporting member includes a first end and a second end opposite to the first end. The first end is connected to the foundation, and the second end is disposed at a center portion of the closed space. The cathode includes a plurality of carbon nanotubes. The cathode is disposed on the second end of the supporting member.
Abstract:
A light emission device including first and second substrates facing each other, electron emission elements on the first substrate, an anode electrode with a phosphor layer on the second substrate, and spacers between the first and second substrates. Each spacer includes a spacer body comprising a dielectric material, a first coating layer on a first region of the spacer body, the first region being adjacent to the first substrate, and a second coating layer on a second region of the spacer body, the second region being adjacent to the second substrate, wherein a maximum secondary electron emission coefficient of the first coating layer under an operation voltage condition applied to the first region is about 0.8 to about 1 and a maximum secondary electron emission coefficient of the second coating layer under an operation voltage condition applied to the first and second regions is about 3 to about 16.
Abstract:
A light emitting apparatus capable of efficiently generating high luminance white light is provided. The present invention permits white light to be generated, without using low-emission efficiency white light emitters, by forming a light emitter layer 16 using a high-light emission efficiency blue light emitter and yellow light emitter. In this case, having at least a part of the blue light emitter particles 17 and at least a part of the yellow light emitter particles 18 exposed at a surface of the light emitter layer 16, respectively, allows both of such particles to be directly bombarded with electrons, thereby effecting a highly efficient electron excitation. Furthermore, the use of YAG or the like, as a yellow light emitter, which emits yellow light not only by electron excitation but also through photoexcitation by the blue light, permits said blue light to contribute to the emission of the yellow light, even when part of the blue light emitted by the blue light emitter particles, as it passes through the light emitter layer 16, is blocked by the yellow light emitter particles 18, whereby white light can be generated efficiently with a reduction in energy loss.