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    Field emitting flat light source and method for making the same
    5.
    发明授权
    Field emitting flat light source and method for making the same 有权
    场发射平面光源及其制作方法

    公开(公告)号：US08896196B2

    公开(公告)日：2014-11-25

    申请号：US13811867

    申请日：2010-08-17

    Applicant: Mingjie Zhou ,  Wenbo Ma ,  Pengrui Shao

    Inventor： Mingjie Zhou ,  Wenbo Ma ,  Pengrui Shao

    IPC: H01J63/04 ,  H01J9/02 ,  H01J31/12 ,  H01J63/02 ,  H01J63/06

    CPC classification number: H01J63/04 ,  H01J9/025 ,  H01J31/127 ,  H01J63/02 ,  H01J63/06

    Abstract: A field emission flat light source and a manufacturing method thereof are provided. The field emission flat light source includes an anode (110), a cathode (120), a light guide plate (130) and a separation body (140). The anode (110) and the light guide plate (130) are separated by the separation body (140). The cathode (120) is provided in the contained space (150) formed by the anode (110), the light guide plate (130) and the separation body (140). The anode (110) includes an anode substrate (112), a metal reflective layer (114) provided on the anode substrate (112) and a light emitting layer (116) provided on the metal reflective layer (114). The cathode (120) includes a cathode substrate (122) and an electron emitter (124) provided on the surface of the cathode substrate (122). The thermal conductivity of the field emission flat light source is improved. The field emission flat light source is applied to the field of the liquid crystal display or the illumination light.

    Abstract translation: 提供场发射平面光源及其制造方法。 场发射平面光源包括阳极（110），阴极（120），导光板（130）和分离体（140）。 阳极（110）和导光板（130）由分离体（140）分离。 阴极（120）设置在由阳极（110），导光板（130）和分离体（140）形成的容纳空间（150）中。 阳极（110）包括阳极基板（112），设置在阳极基板（112）上的金属反射层（114）和设置在金属反射层（114）上的发光层（116）。 阴极（120）包括设在阴极基板（122）的表面上的阴极基板（122）和电子发射体（124）。 场致发射平面光源的导热性得到改善。 场发射平面光源被应用于液晶显示器或照明光的场。

    FIELD EMITTING FLAT LIGHT SOURCE AND METHOD FOR MAKING THE SAME
    6.
    发明申请
    FIELD EMITTING FLAT LIGHT SOURCE AND METHOD FOR MAKING THE SAME 有权
    场致发光平板光源及其制作方法

    公开(公告)号：US20130119856A1

    公开(公告)日：2013-05-16

    申请号：US13811867

    申请日：2010-08-17

    Applicant: Mingjie Zhou ,  Wenbo Ma ,  Pengrui Shao

    Inventor： Mingjie Zhou ,  Wenbo Ma ,  Pengrui Shao

    IPC: H01J63/04 ,  H01J9/02

    CPC classification number: H01J63/04 ,  H01J9/025 ,  H01J31/127 ,  H01J63/02 ,  H01J63/06

    Abstract: A field emission flat light source and a manufacturing method thereof are provided. The field emission flat light source includes an anode (110), a cathode (120), a light guide plate (130) and a separation body (140). The anode (110) and the light guide plate (130) are separated by the separation body (140). The cathode (120) is provided in the contained space (150) formed by the anode (110), the light guide plate (130) and the separation body (140). The anode (110) includes an anode substrate (112), a metal reflective layer (114) provided on the anode substrate (112) and a light emitting layer (116) provided on the metal reflective layer (114). The cathode (120) includes a cathode substrate (122) and an electron emitter (124) provided on the surface of the cathode substrate (122). The thermal conductivity of the field emission flat light source is improved. The field emission flat light source is applied to the field of the liquid crystal display or the illumination light.

    Abstract translation: 提供场发射平面光源及其制造方法。 场发射平面光源包括阳极（110），阴极（120），导光板（130）和分离体（140）。 阳极（110）和导光板（130）由分离体（140）分离。 阴极（120）设置在由阳极（110），导光板（130）和分离体（140）形成的容纳空间（150）中。 阳极（110）包括阳极基板（112），设置在阳极基板（112）上的金属反射层（114）和设置在金属反射层（114）上的发光层（116）。 阴极（120）包括设在阴极基板（122）的表面上的阴极基板（122）和电子发射体（124）。 场致发射平面光源的导热性得到改善。 场发射平面光源被应用于液晶显示器或照明光的场。

    ULTRAVIOLET IRRADIATION DEVICE
    7.
    发明申请
    ULTRAVIOLET IRRADIATION DEVICE 审中-公开
    超紫外线辐射装置

    公开(公告)号：US20120161104A1

    公开(公告)日：2012-06-28

    申请号：US13392560

    申请日：2010-08-03

    Applicant: Koichi Okamoto ,  Mitsuru Funato ,  Yoichi Kawakami ,  Ken Kataoka ,  Hiroshige Hata

    Inventor： Koichi Okamoto ,  Mitsuru Funato ,  Yoichi Kawakami ,  Ken Kataoka ,  Hiroshige Hata

    IPC: H01L33/06

    CPC classification number: C09K11/64 ,  H01J1/63 ,  H01J63/04 ,  H01J63/06

    Abstract: An ultraviolet irradiation device having a simple structure without using a pn junction, which can efficiently utilize a surface plasmon polariton and can emit ultraviolet light of a specific wavelength at a high efficiency. The device has at least one semiconductor multilayer film element and an electron beam irradiation source which are provided in a container having an ultraviolet-ray transmitting window and is vacuum-sealed, wherein the film element has an active layer formed of InxAlyGa1-x-yN (wherein 0≦x≦1, 0≦y≦1, and x+y≦1) and having a single or multiple quantum well structure and a metal film formed on an upper surface of the active layer, composed of metal particles of aluminum or an aluminum alloy and having a nano-structure formed of the metal particles, wherein ultraviolet light is emitted to the outside through the transmitting window by irradiating the film element with electron beams from the irradiation source.

    Abstract translation: 一种紫外线照射装置，其具有简单的结构，不使用pn结，能够有效利用表面等离子体激元，能够高效地发射特定波长的紫外线。 该装置具有至少一个半导体多层膜元件和电子束照射源，它们设置在具有紫外线透射窗口的容器中，并被真空密封，其中该膜元件具有由In x Al y Ga 1-x-y N （其中0＆nlE; x＆nlE; 1,0和nlE; y＆nlE; 1和x + y＆nlE; 1）并且具有单个或多个量子阱结构和形成在有源层的上表面上的金属膜，由金属的铝 或铝合金，并且具有由金属颗粒形成的纳米结构，其中通过用来自照射源的电子束照射膜元件，紫外光通过透射窗口发射到外部。

    Cold Cathode Lighting Device As Fluorescent Tube Replacement
    9.
    发明申请
    Cold Cathode Lighting Device As Fluorescent Tube Replacement 审中-公开
    冷阴极照明装置作为荧光管更换

    公开(公告)号：US20110095674A1

    公开(公告)日：2011-04-28

    申请号：US12766440

    申请日：2010-04-23

    Applicant: Richard N. Herring ,  Andras Kuthi

    Inventor： Richard N. Herring ,  Andras Kuthi

    IPC: H01J1/62 ,  H01J9/18

    CPC classification number: H01J63/04 ,  H01J9/025 ,  H01J9/244 ,  H01J61/26 ,  H01J61/56

    Abstract: A cold cathode lighting device is a fluorescent tube replacement and has a transparent tube, a cold cathode formed as a wire or rod with an electron emissive surface and passing through a center of the transparent tube. An extraction grid is formed around and spaced apart from the cold cathode and has an external diameter smaller than an inner diameter of the transparent tube. A phosphor material and a conductive material form an anode on an inner surface of the transparent tube. A vacuum is maintained within the transparent tube and a power conversion circuit in an end unit converts electrical power into a first potential applied to the cold cathode, a second potential applied to the extraction grid and a third potential applied to the anode. Electrons emitted from the cold cathode accelerate towards the anode and light is emitted from the fluorescent tube replacement light emitting device.

    Abstract translation: 冷阴极照明装置是荧光管替代品，并且具有透明管，形成为具有电子发射表面并穿过透明管的中心的线或棒的冷阴极。 在冷阴极周围形成提取格栅，并且与冷阴极间隔开，具有比透明管的内径小的外径。 荧光体材料和导电材料在透明管的内表面上形成阳极。 在透明管内保持真空，并且端部单元中的功率转换电路将电功率转换成施加到冷阴极的第一电位，施加到提取栅极的第二电位和施加到阳极的第三电位。 从冷阴极发射的电子朝向阳极加速，并且从荧光管替换发光器件发射光。

    Method for making a silicon quantum dot fluorescent lamp
    10.
    发明授权
    Method for making a silicon quantum dot fluorescent lamp 有权
    硅量子点荧光灯的制造方法

    公开(公告)号：US07896723B2

    公开(公告)日：2011-03-01

    申请号：US11976444

    申请日：2007-10-24

    Applicant: Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku

    Inventor： Tsun-Neng Yang ,  Shan-Ming Lan ,  Chin-Chen Chiang ,  Wei-Yang Ma ,  Chien-Te Ku

    IPC: H01J9/00

    CPC classification number: H01J63/06 ,  H01J63/04

    Abstract: A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.

    Abstract translation: 通过在阴极组件和阳极组件之间提供高电压源来制造硅量子点荧光灯。 阴极组件通过提供第一衬底，在第一衬底上涂覆缓冲层，在缓冲层上涂覆催化层并在催化层上提供多个纳米放电元件来制造。 阳极组件通过提供第二衬底制造，在第二衬底上涂覆硅量子点荧光膜并在硅量子点荧光膜上涂覆金属膜。

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