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    Systems and methods for a three-layer chip-scale MEMS device
    141.
    发明授权
    Systems and methods for a three-layer chip-scale MEMS device 有权
    用于三层芯片级MEMS器件的系统和方法

    公开(公告)号：US09171964B2

    公开(公告)日：2015-10-27

    申请号：US13296642

    申请日：2011-11-15

    Applicant: Robert D. Horning ,  Ryan Supino

    Inventor： Robert D. Horning ,  Ryan Supino

    IPC: H01L29/84 ,  B81B7/00

    CPC classification number: H01L29/84 ,  B81B7/0032 ,  B81B7/0038 ,  B81B7/0074 ,  B81B7/0077 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81C2201/019 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: Systems and methods for a micro-electromechanical system (MEMS) device are provided. In one embodiment, a system comprises a first outer layer and a first device layer comprising a first set of MEMS devices, wherein the first device layer is bonded to the first outer layer. The system also comprises a second outer layer and a second device layer comprising a second set of MEMS devices, wherein the second device layer is bonded to the second outer layer. Further, the system comprises a central layer having a first side and a second side opposite that of the first side, wherein the first side is bonded to the first device layer and the second side is bonded to the second device layer.

    Abstract translation: 提供了一种用于微机电系统（MEMS）装置的系统和方法。 在一个实施例中，系统包括第一外层和包括第一组MEMS器件的第一器件层，其中第一器件层接合到第一外层。 该系统还包括第二外层和包括第二组MEMS器件的第二器件层，其中第二器件层结合到第二外层。 此外，该系统包括具有第一侧和与第一侧相反的第二侧的中心层，其中第一侧接合到第一器件层，第二侧接合到第二器件层。

    Vibration transducer and its manufacturing method
    142.
    发明授权
    Vibration transducer and its manufacturing method 有权
    振动传感器及其制造方法

    公开(公告)号：US09063023B2

    公开(公告)日：2015-06-23

    申请号：US13228855

    申请日：2011-09-09

    Applicant: Takashi Yoshida

    Inventor： Takashi Yoshida

    IPC: G01L9/08 ,  G01H13/00 ,  G01L9/00 ,  G01L1/10 ,  B81B3/00

    CPC classification number: G01L9/0019 ,  B81B3/001 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2201/0285 ,  B81B2203/0118 ,  G01L1/106 ,  G01L9/0013 ,  H03H9/2457 ,  H03H2009/02496

    Abstract: A vibration transducer includes a silicon single crystal vibration beam provided over a silicon single crystal substrate, the vibration beam having a sectional shape that is longer in a direction perpendicular to a surface of the silicon single crystal substrate than in a direction parallel with it, a shell made of silicon, surrounding the vibration beam with a gap, and forming a vacuum room together with the silicon single crystal substrate, a plate-like first electrode plate disposed parallel with the surface of the silicon single crystal substrate, the first electrode plate having one end connected to the vibration beam, plate-like second and third electrode plates disposed parallel with the surface of the silicon single crystal substrate so as to be opposed to each other with the vibration beam interposed in between, and asperities formed on confronting side surfaces of the vibration beam and the second and third electrode plates.

    Abstract translation: 振动传感器包括设置在硅单晶衬底上的硅单晶振动束，所述振动束具有在垂直于所述硅单晶衬底的表面的方向上比在与其平行的方向上更长的截面形状， 由硅制成的壳体，围绕振动梁间隙，并与硅单晶基板一起形成真空室，与硅单晶基板的表面平行布置的板状第一电极板，第一电极板具有 一端与振动束相连接，板状的第二和第三电极板与硅单晶衬底的表面平行设置，以便彼此相对地插入振动束，并且形成在相对侧面上的凹凸 的振动束和第二和第三电极板。

    INERTIAL AND PRESSURE SENSORS ON SINGLE CHIP
    144.
    发明申请
    INERTIAL AND PRESSURE SENSORS ON SINGLE CHIP 有权
    单芯片的惯性和压力传感器

    公开(公告)号：US20150035093A1

    公开(公告)日：2015-02-05

    申请号：US14447696

    申请日：2014-07-31

    Applicant: Robert Bosch GmbH

    Inventor： Ando Feyh ,  Gary O'Brien

    IPC: G01P15/08 ,  G01L1/14 ,  G01P15/125 ,  G01P15/14 ,  G01P1/02

    CPC classification number: G01P15/0802 ,  B81B3/0021 ,  B81B7/02 ,  B81B2201/025 ,  B81B2201/0264 ,  G01C19/5769 ,  G01C19/5783 ,  G01L1/14 ,  G01L1/18 ,  G01P1/023 ,  G01P15/125 ,  G01P15/14 ,  G01P15/18 ,  G01P2015/0862 ,  G01P2015/088

    Abstract: In one embodiment, the process flow for a capacitive pressures sensor is combined with the process flow for an inertial sensor. In this way, an inertial sensor is realized within the membrane layer of the pressure sensor. The device layer is simultaneously used as z-axis electrode for out-of-plane sensing in the inertial sensor, and/or as the wiring layer for the inertial sensor. The membrane layer (or cap layer) of the pressure sensor process flow is used to define the inertial sensor sensing structures. Insulating nitride plugs in the membrane layer are used to electrically decouple the various sensing structures for a multi-axis inertial sensor, allowing for fully differential sensing.

    Abstract translation: 在一个实施例中，电容式压力传感器的工艺流程与惯性传感器的工艺流程相结合。 以这种方式，在压力传感器的膜层内实现惯性传感器。 器件层同时用作惯性传感器中的平面外感测的z轴电极，和/或用作惯性传感器的布线层。 压力传感器工艺流程的膜层（或盖层）用于定义惯性传感器感测结构。 膜层中的绝缘氮化物塞用于电耦合用于多轴惯性传感器的各种感测结构，允许完全差分感测。

    Vibrating micromechanical system having beam-shaped element
    145.
    发明授权
    Vibrating micromechanical system having beam-shaped element 有权
    具有波束形元件的振动微机械系统

    公开(公告)号：US08887571B2

    公开(公告)日：2014-11-18

    申请号：US13262592

    申请日：2009-03-31

    Applicant: Marco Dienel ,  Roman Forke ,  Dirk Scheibner

    Inventor： Marco Dienel ,  Roman Forke ,  Dirk Scheibner

    IPC: G01N29/00 ,  B81B3/00

    CPC classification number: B81B3/0078 ,  B81B2201/025 ,  B81B2203/0118 ,  Y10T29/49007

    Abstract: An exposed end of a micromechanical system having at least one beam-shaped element is connected to a further element of the micromechanical system at the other end thereof. To optimize the mechanical properties of the micromechanical system, recesses are provided in the beam-shaped element in such a way that the mass of the beam-shaped elements decreases toward the exposed end.

    Abstract translation: 具有至少一个梁状元件的微机械系统的暴露端在另一端连接到微机械系统的另一元件。 为了优化微机械系统的机械性能，在波束形元件中设置凹槽，使得波束形元件的质量朝着暴露端减小。

    Sensor module, sensor device, manufacturing method of sensor device, and electronic apparatus
    146.
    发明授权
    Sensor module, sensor device, manufacturing method of sensor device, and electronic apparatus 有权
    传感器模块，传感器装置，传感器装置的制造方法以及电子设备

    公开(公告)号：US08841762B2

    公开(公告)日：2014-09-23

    申请号：US13440337

    申请日：2012-04-05

    Applicant: Yugo Koyama

    Inventor： Yugo Koyama

    IPC: H01L23/48 ,  H01L21/00 ,  G01C19/5783 ,  H01L23/31 ,  G01C19/5621 ,  H01L23/055

    CPC classification number: G01C19/5783 ,  B81B7/0074 ,  B81B2201/025 ,  G01C19/5621 ,  H01L23/055 ,  H01L23/3192 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    Abstract: A sensor module includes a support member having a first flat surface, a second flat surface orthogonally connected to the first flat surface, a third flat surface orthogonally connected to the first flat surface and the second flat surface, and a fourth flat surface opposed to the first flat surface as an attachment surface to an external member, the first flat surface having a support surface depressed from the first flat surface, IC chips having connection terminals on active surface sides with inactive surface sides along the active surfaces respectively attached to the respective surfaces of the support member, and vibration gyro elements having connection electrodes, and the vibration gyro elements are provided on the active surface sides of the IC chips and the connection electrodes are attached to the connection terminals of the IC chips so that principal surfaces are respectively along the respective surfaces of the support member.

    Abstract translation: 传感器模块包括具有第一平坦表面的支撑构件，与第一平坦表面正交连接的第二平坦表面，与第一平坦表面和第二平坦表面正交连接的第三平坦表面和与第一平坦表面相对的第四平坦表面 所述第一平面具有从所述第一平面凹下的支撑面，所述第一平面具有从所述第一平面凹下的支撑面，所述IC芯片具有在所述有源面侧的连接端子，所述IC芯片沿着所述有源面分别具有不平坦的表面侧， 和具有连接电极的振动陀螺元件，并且振动陀螺元件设置在IC芯片的有源面侧，并且连接电极附接到IC芯片的连接端子，使得主表面分别沿着 支撑构件的各个表面。

    Temperature-compensated micro-electromechanical device, and method of temperature compensation in a micro-electromechanical device
    147.
    发明授权
    Temperature-compensated micro-electromechanical device, and method of temperature compensation in a micro-electromechanical device 有权
    温度补偿微机电装置，以及微机电装置中的温度补偿方法

    公开(公告)号：US08733170B2

    公开(公告)日：2014-05-27

    申请号：US12683888

    申请日：2010-01-07

    Applicant: Ernesto Lasalandra ,  Angelo Merassi ,  Sarah Zerbini

    Inventor： Ernesto Lasalandra ,  Angelo Merassi ,  Sarah Zerbini

    IPC: G01P15/08 ,  G01P21/00

    CPC classification number: B81C1/0069 ,  B81B3/0081 ,  B81B2201/025 ,  B81C1/00158 ,  B81C1/00666 ,  G01C19/56 ,  G01C19/5755 ,  G01P1/006 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/0814 ,  H03H9/02448 ,  H03H2009/02496 ,  Y10T29/43

    Abstract: A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.

    Abstract translation: 微机电装置包括半导体衬底，其中第一微结构和第二参考微结构被集成。 第一微结构和第二微结构被布置在基板中，以便由于基板的热膨胀而产生相等的应变。 此外，第一微结构相对于基板设置有可移动部件和固定部件，而第二微结构具有与第一微结构基本对称的形状，但是相对于基板固定。 通过从第一微结构的电特性减去第一微结构的电特性的变化，可以补偿由热膨胀或收缩的变化引起的第一微结构的电特性的变化。

    Micro-electro-mechanical system device, out-of-plane sensor and method for making micro-electro-mechanical system device
    148.
    发明授权
    Micro-electro-mechanical system device, out-of-plane sensor and method for making micro-electro-mechanical system device 有权
    微机电系统装置，平面外传感器及制造微机电系统装置的方法

    公开(公告)号：US08640543B2

    公开(公告)日：2014-02-04

    申请号：US13451154

    申请日：2012-04-19

    Applicant: Sheng Ta Lee ,  Chuan Wei Wang

    Inventor： Sheng Ta Lee ,  Chuan Wei Wang

    IPC: G01P15/125

    CPC classification number: G01P15/125 ,  B81B2201/025 ,  B81C1/00246 ,  B81C2203/0714 ,  G01P15/08 ,  G01P15/0802

    Abstract: The present invention discloses a micro-electro-mechanical system (MEMS) device, comprising: a mass including a main body and two capacitor plates located at the two sides of the main body and connected with the main body, the two capacitor plates being at different elevation levels; an upper electrode located above one of the two capacitor plates, forming one capacitor therewith; and a lower electrode located below the other of the two capacitor plates, forming another capacitor therewith, wherein the upper and lower electrodes are misaligned with each other in a horizontal direction.

    Abstract translation: 本发明公开了一种微电子机械系统（MEMS）装置，其特征在于，包括：主体和两个位于主体两侧并与主体连接的电容器板的质量体，两个电容器板位于 不同高程水平; 位于两个电容器板之一上方的上电极，与其形成一个电容器; 以及位于两个电容器板的另一个下方的下电极，与其形成另一个电容器，其中上电极和下电极在水平方向上彼此不对准。

    Microscale Metallic CNT Templated Devices and Related Methods
    149.
    发明申请
    Microscale Metallic CNT Templated Devices and Related Methods 有权
    微尺度金属CNT模板装置及相关方法

    公开(公告)号：US20130285160A1

    公开(公告)日：2013-10-31

    申请号：US13657678

    申请日：2012-10-22

    Applicant: Brigham Young University

    Inventor： Robert C. Davis ,  Richard R. Vanfleet

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/00666 ,  B81B3/0072 ,  B81B2201/025 ,  B81C1/00619 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00

    Abstract: A microscale device comprises a patterned forest of vertically grown and aligned carbon nanotubes defining a carbon nanotube forest with the nanotubes having a height defining a thickness of the forest, the patterned forest defining a patterned frame that defines one or more components of a microscale device. A conformal coating of substantially uniform thickness at least partially coats the nanotubes, defining coated nanotubes and connecting adjacent nanotubes together, without substantially filling interstices between individual coated nanotubes. A metallic interstitial material infiltrates the carbon nanotube forest and at least partially fills interstices between individual coated nanotubes.

    Abstract translation: 微尺度装置包括限定碳纳米管森林的垂直生长和对准的碳纳米管的图案化森林，其中纳米管具有限定森林厚度的高度，所述图案化森林限定限定微尺度装置的一个或多个部件的图案化框架。 基本均匀厚度的保形涂层至少部分地涂覆纳米管，限定涂覆的纳米管并将相邻的纳米管连接在一起，而基本上不填充单个涂覆的纳米管之间的间隙。 金属间质材料渗透碳纳米管森林，并且至少部分地填充单个涂覆的纳米管之间的间隙。

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