公开(公告)号：US20080105046A1

公开(公告)日：2008-05-08

申请号：US11593311

申请日：2006-11-03

Applicant: Lamar F. Ricks

Inventor： Lamar F. Ricks

IPC: G01F15/00

CPC classification number: G01F1/6845 ,  B81B2201/0292 ,  B81C1/00333 ,  G01F1/692

Abstract: A microelectronic packaging method and system for minimizing the distance between the sensing plane of a MEMS flow sensor and a mounting substrate thereof. Flow obstructions are minimized and laminar flow maintained in order to enhance flow sensor optimal performance. The distance between the sensing plane and the mounting substrate can be controlled by optimizing the dimensions of an associated carrier with respect to the thickness of the MEMS flow sensor. Ideally, the sensing plane of the MEMS flow sensor is located at the same level as the mounting substrate or just slightly higher.

Abstract translation: 一种用于最小化MEMS流量传感器的感测平面与其安装基板之间的距离的微电子封装方法和系统。 流动障碍被最小化并保持层流以便增强流量传感器的最佳性能。 可以通过相对于MEMS流量传感器的厚度优化相关联的载体的尺寸来控制感测平面和安装基板之间的距离。 理想情况下，MEMS流量传感器的传感平面位于与安装基板相同的水平位置上，或稍微高一些。

公开(公告)号：US20070287233A1

公开(公告)日：2007-12-13

申请号：US11818716

申请日：2007-06-15

Applicant: Changqing Zhan ,  Michael Wolfson ,  John Hartzell

Inventor： Changqing Zhan ,  Michael Wolfson ,  John Hartzell

IPC: H01L21/339

CPC classification number: B81B3/0021 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81C1/00246 ,  B81C2203/075 ,  C30B1/02 ,  C30B29/00 ,  G01L1/044 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/124 ,  G01P2015/0828 ,  H01L27/12 ,  H01L29/66757 ,  H04R17/02 ,  H04R31/006

Abstract: A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.

Abstract translation: 提供了压电TFT悬臂微机电系统（MEMS）及相关制造工艺。 该方法包括：提供例如玻璃等基板; 形成覆盖衬底的薄膜; 形成薄膜悬臂梁; 并且同时在悬臂梁内形成TFT。 TFT可以形成为最少部分地覆盖在悬臂梁顶表面上，至少部分地覆盖悬臂梁底表面或嵌入在悬臂梁内。 在一个示例中，在衬底上形成薄膜包括：选择性地形成具有第一应力水平的第一层; 选择性地形成覆盖在第一层上的第一有源Si区; 以及以第二应力水平选择性地形成覆盖所述第一层的第二层。 薄膜悬臂梁由第一和第二层形成，而TFT源极/漏极（S / D）和沟道区域由第一有源Si区形成。

公开(公告)号：US20060188934A1

公开(公告)日：2006-08-24

申请号：US11062707

申请日：2005-02-22

Applicant: Ying-Lan Chang ,  Michael Tan

Inventor： Ying-Lan Chang ,  Michael Tan

IPC: G01N33/53 ,  C12M1/34

CPC classification number: B81B3/0032 ,  B81B2201/0292 ,  G01N27/127 ,  G01N27/4146

Abstract: A high-sensitivity sensor with improved stability includes nanostructure-based sensors that are arranged such that a first nanostructure-based sensor (“shielded sensor”) is shielded from potential exposure to an environmental factor of interest and a second nanostructure-based sensor (“exposed sensor”) is allowed potential exposure to an environmental factor of interest. Further, all of the nanostructure-based sensors are arranged to allow common exposure to environmental factors not of interest. Thus, relative changes in properties, such as electrical resistance, of the shielded nanostructure-based sensor versus changes in properties of the exposed nanostructure-based sensor are used for detecting an environmental factor of interest.

Abstract translation: 具有改进的稳定性的高灵敏度传感器包括基于纳米结构的传感器，其布置成使得基于纳米结构的第一传感器（“屏蔽传感器”）被屏蔽以免受潜在的暴露于感兴趣的环境因素和基于第二纳米结构的传感器（“ 暴露的传感器“）被允许潜在地暴露于感兴趣的环境因素。 此外，所有基于纳米结构的传感器被布置成允许常见的暴露于不感兴趣的环境因素。 因此，使用基于屏蔽的纳米结构的传感器的性质（例如电阻）与暴露的基于纳米结构的传感器的性质的变化的相对变化用于检测感兴趣的环境因素。

公开(公告)号：US20060094150A1

公开(公告)日：2006-05-04

申请号：US10980226

申请日：2004-11-04

Applicant: Tzong-Sheng Lee ,  Jing-Hung Chiou ,  Jeng-Long Ou

Inventor： Tzong-Sheng Lee ,  Jing-Hung Chiou ,  Jeng-Long Ou

IPC: H01L21/00

CPC classification number: B81C1/00126 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0307 ,  G01J5/10 ,  G01K17/003 ,  G01K17/006 ,  H01L21/4846 ,  H01L23/4822 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method to enhance the connection strength of suspended membrane leads and substrate contacts is described. A reading circuit chip is provided and a sacrificial layer is formed thereon. Subsequently, an electrical contact window is created in the sacrificial layer to expose a conductive layer of the reading circuit chip. A metal layer is filled into the contact window and a conductive membrane is formed thereon to couple electrically to the metal layer. Afterward, an infrared measuring membrane and an upper dielectric layer are formed thereon.

Abstract translation: 描述了提高悬浮膜引线和基板触点的连接强度的方法。 提供读取电路芯片，并在其上形成牺牲层。 随后，在牺牲层中形成电接触窗口以暴露读取电路芯片的导电层。 将金属层填充到接触窗中，并且在其上形成导电膜以将其电耦合到金属层。 之后，在其上形成红外测量膜和上介电层。

公开(公告)号：US20050218757A1

公开(公告)日：2005-10-06

申请号：US11089113

申请日：2005-03-24

Applicant: Hirofumi Yamaguchi ,  Takatoshi Nehagi ,  Kunihiko Yoshioka

Inventor： Hirofumi Yamaguchi ,  Takatoshi Nehagi ,  Kunihiko Yoshioka

IPC: B81B3/00 ,  H01L41/09 ,  H01L41/047

CPC classification number: B81B3/0086 ,  B81B2201/0292 ,  G01N9/002 ,  G01N9/36 ,  G01N11/16 ,  H01L41/0973

Abstract: The present piezoelectric/electrostrictive film-type device comprises a ceramic substrate having a thin diaphragm portion and a peripheral thick portion, a lower electrode, an auxiliary electrode, a piezoelectric/electrostrictive film, and an upper electrode; the lower electrode, the auxiliary electrode, the piezoelectric/electrostrictive film, and the upper electrode having been layered in that order on the ceramic substrate. The upper electrode has a length of 30 to 70% in relative to the length of the thin diaphragm portion, and preferably has a width of 70% or more in relative to the width of the thin diaphragm portion.

Abstract translation: 本压电/电致伸缩膜型器件包括具有薄膜部分和外围厚部分的陶瓷基片，下电极，辅助电极，压电/电致伸缩膜和上电极; 下电极，辅助电极，压电/电致伸缩膜和上电极依次层叠在陶瓷基板上。 上电极相对于薄膜部分的长度具有30至70％的长度，并且优选地相对于薄膜部分的宽度具有70％或更大的宽度。

公开(公告)号：US20050130360A1

公开(公告)日：2005-06-16

申请号：US11031320

申请日：2005-01-05

Applicant: Changqing Zhan ,  Michael Wolfson ,  John Hartzell

Inventor： Changqing Zhan ,  Michael Wolfson ,  John Hartzell

IPC: H01L21/336

CPC classification number: B81B3/0021 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81C1/00246 ,  B81C2203/075 ,  C30B1/02 ,  C30B29/00 ,  G01L1/044 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/124 ,  G01P2015/0828 ,  H01L27/12 ,  H01L29/66757 ,  H04R17/02 ,  H04R31/006

Abstract: A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.

Abstract translation: 提供了压电TFT悬臂微机电系统（MEMS）及相关制造工艺。 该方法包括：提供例如玻璃等基板; 形成覆盖衬底的薄膜; 形成薄膜悬臂梁; 并且同时在悬臂梁内形成TFT。 TFT可以形成为最少部分地覆盖在悬臂梁顶表面上，至少部分地覆盖悬臂梁底表面或嵌入在悬臂梁内。 在一个示例中，在衬底上形成薄膜包括：选择性地形成具有第一应力水平的第一层; 选择性地形成覆盖在第一层上的第一有源Si区; 以及以第二应力水平选择性地形成覆盖所述第一层的第二层。 薄膜悬臂梁由第一和第二层形成，而TFT源极/漏极（S / D）和沟道区域由第一有源Si区形成。

公开(公告)号：US06844214B1

公开(公告)日：2005-01-18

申请号：US10604850

申请日：2003-08-21

Applicant: Ping Mei ,  Decai Sun ,  Robert A. Street

Inventor： Ping Mei ,  Decai Sun ,  Robert A. Street

IPC: B81B3/00 ,  H01L21/00 ,  H01L23/48 ,  H01R11/22

CPC classification number: B81B3/0021 ,  B81B2201/0292 ,  B81B2201/038 ,  B81B2201/047 ,  B81B2203/0118 ,  B81C2201/0167 ,  H01R12/52

Abstract: A microelectromechanical system (MEMS) based sensor comprises: a substrate defining a plane; a first conductive material layer having a first stress, a first portion of the first conductive material layer being connected to the substrate and extending in a substantially parallel direction to the plane defined by the substrate and a second portion being disconnected from the substrate and extending in a substantially non-parallel direction to the plane defined by the substrate; and a sensor material layer formed over at least the second portion of the first conductive material layer, the sensor material layer having a second stress that is less than the first stress of the first conductive material layer. The stresses form a stress gradient that bends the second portion of the first conductive material layer and the sensor material layer formed over the second portion of the first conductive material layer away from the substrate.

Abstract translation: 基于微机电系统（MEMS）的传感器包括：限定平面的基板; 具有第一应力的第一导电材料层，所述第一导电材料层的第一部分连接到所述衬底并且在基本上平行于由所述衬底限定的平面的方向上延伸，并且所述第二部分与所述衬底断开并且延伸到 基本上不平行于由衬底限定的平面的方向; 以及在所述第一导电材料层的至少第二部分上形成的传感器材料层，所述传感器材料层具有小于所述第一导电材料层的第一应力的第二应力。 应力形成应力梯度，该应力梯度使第一导电材料层的第二部分和形成在第一导电材料层的第二部分上方的传感器材料层远离衬底弯曲。

公开(公告)号：US06770569B2

公开(公告)日：2004-08-03

申请号：US10210315

申请日：2002-08-01

Applicant: Juergen A. Foerstner ,  Steven M. Smith ,  Raymond Mervin Roop

Inventor： Juergen A. Foerstner ,  Steven M. Smith ,  Raymond Mervin Roop

IPC: H01L2131

CPC classification number: B81C1/0038 ,  B81B2201/018 ,  B81B2201/0292 ,  B81C1/00246 ,  B81C2201/0164 ,  B81C2203/0735 ,  H01G5/18

Abstract: A method is provided for making a MEMS structure (69). In accordance with the method, a CMOS substrate (51) is provided which has interconnect metal (53) deposited thereon. A MEMS structure is created on the substrate through the plasma assisted chemical vapor deposition (PACVD) of a material selected from the group consisting of silicon and silicon-germanium alloys. The low deposition temperatures attendant to the use of PACVD allow these materials to be used for MEMS fabrication at the back end of an integrated CMOS process.

Abstract translation: 提供了一种用于制造MEMS结构（69）的方法。 根据该方法，提供具有沉积在其上的互连金属（53）的CMOS基板（51）。 通过等离子体辅助化学气相沉积（PACVD）在由硅和硅 - 锗合金组成的组中选择的材料在衬底上产生MEMS结构。 使用PACVD的低沉积温度允许这些材料用于集成CMOS工艺后端的MEMS制造。

公开(公告)号：US20030207487A1

公开(公告)日：2003-11-06

申请号：US10429988

申请日：2003-05-06

Applicant: HRL Laboratories, LLC ,  Hughes Electronics Corporation

Inventor： Randall L. Kubena ,  Michael J. Little ,  LeRoy H. Hackett

IPC: H01L021/00

CPC classification number: B81C1/0015 ,  B81B2201/0292 ,  B81C2203/036 ,  H01H59/0009

Abstract: A method of making a micro electromechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

Abstract translation: 制造微机电开关或隧道传感器的方法。 在第一基板或晶片上限定悬臂梁结构和配合结构; 并且在第二衬底或晶片上限定至少一个接触结构和配合结构，所述第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。 在至少一个配合结构上提供粘合层，优选共晶粘合层。 第一基板的配合结构被移动成与第二基板或晶片的配合结构面对面的关系。 在两个基板之间施加压力，以便在接合或共晶层处在两个配合结构之间发生结合。 然后移除第一衬底或晶片以释放悬臂梁结构以相对于第二衬底或晶片移动。

公开(公告)号：US06630367B1

公开(公告)日：2003-10-07

申请号：US09629684

申请日：2000-08-01

Applicant: Randall L. Kubena ,  Michael J. Little ,  Leroy H. Hackett

Inventor： Randall L. Kubena ,  Michael J. Little ,  Leroy H. Hackett

IPC: H01L2100

CPC classification number: B81C1/0015 ,  B81B2201/0292 ,  B81C2203/036 ,  H01H59/0009

Abstract: A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

Abstract translation: 一种制造微机电开关或隧道传感器的方法。 在第一基板或晶片上限定悬臂梁结构和配合结构; 并且在第二衬底或晶片上限定至少一个接触结构和配合结构，所述第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。 在至少一个配合结构上提供粘合层，优选共晶粘合层。 第一基板的配合结构移动到与第二基板或晶片的配合结构相对应的关系。 在两个基板之间施加压力，以便在接合或共晶层处在两个配合结构之间发生结合。 然后移除第一衬底或晶片以释放悬臂梁结构以相对于第二衬底或晶片移动。