公开(公告)号：US20040232848A1

公开(公告)日：2004-11-25

申请号：US10688424

申请日：2003-10-16

Inventor： George Wakalopulos

IPC: H01J007/24

CPC classification number: H01J3/025 ,  H01J3/021

Abstract: An electron beam device wherein a low temperature gaseous plasma is generated in a chamber divided by two parallel wire grids. A semiconductor wafer serves as a cathode drawing ions from the plasma to impinge on the wafer, generating secondary electrons that are accelerated toward an anode on the opposite side of the grids where a target resides. In order to have a beam with uniform cross-sectional flux characteristics, the semiconductor wafer is doped with a graded dopant concentration that promotes a uniform beam.

Abstract translation: 一种电子束装置，其中在由两个平行的线栅格划分的室中产生低温气体等离子体。 半导体晶片用作从等离子体吸取离子以撞击晶片的阴极，产生在目标所在的栅格的相对侧朝向阳极加速的二次电子。 为了具有均匀横截面通量特性的光束，半导体晶片被掺杂有渐变掺杂剂浓度，其促进均匀的光束。

公开(公告)号：US06756734B2

公开(公告)日：2004-06-29

申请号：US09960767

申请日：2001-09-24

Applicant: Shunji Tsuida ,  Hironori Imura ,  Hideo Makishima

Inventor： Shunji Tsuida ,  Hironori Imura ,  Hideo Makishima

IPC: H01J2316

CPC classification number: H01J23/02 ,  H01J3/021 ,  H01J23/06 ,  H01J25/34

Abstract: Expressing a perveance of an electron gun to be determined by a form of the electron gun as P&mgr;, a voltage to be impressed on an accelerating electrode Va and a beam current Ib, voltage Va which satisfies the following expression, Ib

Abstract translation: 通过电子枪的形式表示电子枪的外观为Pmu，施加在加速电极Va上的电压和束电流Ib，将满足下式的电压Va施加到加速电极 此外，加速电极的电位始终保持在电子管中的所有电极的最高水平。

公开(公告)号：US06747416B2

公开(公告)日：2004-06-08

申请号：US10349260

申请日：2003-01-21

Applicant: Jack Barger ,  James Qian Wang ,  Benjamin Edward Russ ,  Jean-Pierre Guillou

Inventor： Jack Barger ,  James Qian Wang ,  Benjamin Edward Russ ,  Jean-Pierre Guillou

IPC: G09G310

CPC classification number: H01J3/021 ,  H01J29/481

Abstract: An electron emitting structure having deflectable electrodes, such as found in grating light valves (GLVs) is provided. In one implementation, the structure includes a substrate having base electrodes and gate electrodes coupled thereto and insulated from each other, and an emitting material deposited on active regions of the base electrodes. Upon applying a voltage potential difference between a base electrode and a gate electrode, a portion of one of the base electrode and the gate electrode deflects through electrostatic force positioning the portion of the one of the base electrode and the gate electrode relative to another one of the base electrode and the gate electrode such that an electric field is produced that is sufficient to cause an emission from an emitting material deposited on the base electrode. In preferred form, lower drive voltages are required to provide the electric field without requiring sub-micron spacing between electrodes.

Abstract translation: 提供了具有可偏转电极的电子发射结构，例如在光栅光阀（GLV）中发现的。 在一个实施方案中，该结构包括具有底部电极和连接到其上并彼此绝缘的栅电极的基板和沉积在基极的有源区上的发射材料。 在施加基极和栅电极之间的电压电位差时，基极和栅电极中的一个的一部分通过静电力偏转定位基极和栅电极中的一个的一部分相对于另一个 基极和栅电极，使得产生足以引起沉积在基极上的发射材料的发射的电场。 在优选形式中，需要较低的驱动电压来提供电场而不需要电极之间的亚微米间隔。

公开(公告)号：US20040085009A1

公开(公告)日：2004-05-06

申请号：US10381477

申请日：2003-12-31

Inventor： Tetsuya Ide ,  Junichi Sawahata ,  Masao Urayama

IPC: H01J001/02

CPC classification number: H01J29/488 ,  H01J1/304 ,  H01J3/021 ,  H01J3/029 ,  H01J29/467 ,  H01J2329/00

Abstract: A cold-cathode electron source having an improved utilization efficiency of an electron beam and a simple structure. The cold-cathode electron source comprises a gate electrode (4) provided on a substrate (2) through an insulating layer (3) and an emitter (6) extending through the insulating layer (3) and the gate electrode (4) and disposed in an opening of the gate. During the emission of electrons from the emitter (6), the following relationships are satisfied: 10 nullV/nullmnullnull(VanullVg)/(HanullHg)nullVg/Hg; and Vg/Hg nullV/nullmnullnullVanull10null4null(9.7null1.3null1n(Hg))null(1000/Ha)0.5, where Ha nullnullmnull is an anode-emitter distance, Va nullVnull is an anode-emitter voltage, Hg nullnullmnull is a gate-emitter distance, and Vg nullVnull is a gate-emitter voltage.

Abstract translation: 具有提高电子束的利用效率和简单结构的冷阴极电子源。 冷阴极电子源包括通过绝缘层（3）设置在基板（2）上的栅极（4）和延伸穿过绝缘层（3）和栅电极（4）的发射极（6） 在门口的开口。 在从发射体（6）发射电子的过程中，满足以下关系：10 V / V m =（Va-Vg）/（Ha-Hg）> = Vg / Hg; 和V g / Hg [V / mum] = Vax 10 -4（9.7-1.3x1n（Hg））x（1000 / Ha）<0.5>，其中Ha [m]是阳极 - 发射极距离， V]是阳极 - 发射极电压，Hg [m]是栅 - 发射极距离，Vg [V]是栅 - 发射极电压。

公开(公告)号：US20040075379A1

公开(公告)日：2004-04-22

申请号：US10646502

申请日：2003-08-23

Inventor： Sungho Jin

IPC: H01J001/62 ,  H01L021/00

CPC classification number: H01J3/021 ,  H01J9/025 ,  H01J21/10 ,  Y10S977/939

Abstract: The invention comprises a method of fabricating a vacuum microtube device comprising the steps of forming a cathode layer comprising an array of electron emitters, forming a gate layer comprising an array of openings for passing electrons from the electron emitters, and forming an anode layer for receiving electrons from the emitters. The cathode gate layer and the anode layer are vertically aligned and bonded together with intervening spacers on a silicon substrate so that electrons from respective emitters pass through respective gate openings to the anode. The use of substrate area is highly efficient and electrode spacing can be precisely controlled. An optional electron multiplying structure providing secondary electron emission material can be disposed between the gate layer and the anode in the path of emitted electrons.

Abstract translation: 本发明包括一种制造真空微管装置的方法，包括以下步骤：形成包括电子发射体阵列的阴极层，形成包含用于使来自电子发射体的电子的开口阵列的栅极层，以及形成用于接收的阳极层 来自发射体的电子。 阴极栅极层和阳极层与硅衬底上的中间间隔物垂直对准并结合在一起，使得来自各个发射体的电子通过相应的栅极开口到达阳极。 衬底面积的使用是高效的，电极间距可以精确控制。 提供二次电子发射材料的可选的电子倍增结构可以在发射电子的路径中设置在栅极层和阳极之间。

公开(公告)号：US20040061430A1

公开(公告)日：2004-04-01

申请号：US10666236

申请日：2003-09-19

Applicant: Micron Technology, Inc.

Inventor： Ammar Derraa

IPC: H01J001/62 ,  H01J063/04

CPC classification number: H01J3/021 ,  H01J1/3044 ,  H01J9/185 ,  H01J29/481 ,  H01J31/127

Abstract: An FED and a method of manufacture are provided. The FED includes a cathode assembly containing an improved column line structure. The column line structure includes a conductive structure formed on a substrate. A resistive layer is formed on the conductive structure, and an insulator layer is formed partly over the resistive layer. The contact between the base of the emitter tips and the addressing column line is achieved through a lateral side that is not covered by the insulator layer. The insulator layer helps reduce the possibility of electrical shorting between the addressing column line and the row line structure of the cathode assembly. The insulator layer on top of the addressing column line will allow the use of a thinner subsequent dielectric layer. This thinner dielectric layer, which supports the grid, will provide a lower RC time constant and help achieve better video rate operation. The thinner dielectric layer also will result in smaller grid openings above the tips. This will provide for better beam spots, and, therefore, better image resolution. The thinner dielectric layer will require less applied voltage to extract electrons from the tips, resulting in lower power consumption for the FED.

Abstract translation: 提供FED和制造方法。 FED包括具有改进的柱线结构的阴极组件。 列线结构包括形成在基板上的导电结构。 在导电结构上形成电阻层，部分地在电阻层上形成绝缘体层。 通过未被绝缘体层覆盖的侧面来实现发射极尖端的基极与寻址列线之间的接触。 绝缘体层有助于减少寻址列线和阴极组件的行线结构之间的电短路的可能性。 在寻址列线顶部的绝缘体层将允许使用更薄的后续介电层。 支持电网的这种较薄的介质层将提供较低的RC时间常数，有助于实现更好的视频速率操作。 更薄的介电层也将导致尖端上方的较小的栅极开口。 这将提供更好的光束点，因此，更好的图像分辨率。 更薄的电介质层将需要更少的施加电压以从尖端提取电子，导致FED的较低功耗。

公开(公告)号：US20040007988A1

公开(公告)日：2004-01-15

申请号：US10349260

申请日：2003-01-21

Applicant: Sony Corporation, a Japanese Corporation ,  Sony Electronics, a Delaware Corporation

Inventor： Jack Barger ,  James Qian Wang ,  Benjamin Edward Russ ,  Jean-Pierre Guillou

IPC: G09G003/10

CPC classification number: H01J3/021 ,  H01J29/481

Abstract: An electron emitting structure having deflectable electrodes, such as found in grating light valves (GLVs) is provided. In one implementation, the structure includes a substrate having base electrodes and gate electrodes coupled thereto and insulated from each other, and an emitting material deposited on active regions of the base electrodes. Upon applying a voltage potential difference between a base electrode and a gate electrode, a portion of one of the base electrode and the gate electrode deflects through electrostatic force positioning the portion of the one of the base electrode and the gate electrode relative to another one of the base electrode and the gate electrode such that an electric field is produced that is sufficient to cause an emission from an emitting material deposited on the base electrode. In preferred form, lower drive voltages are required to provide the electric field without requiring sub-micron spacing between electrodes.

公开(公告)号：US20030049875A1

公开(公告)日：2003-03-13

申请号：US10067315

申请日：2002-02-07

Inventor： Jyh-Rong Sheu ,  Jia-Chong Ho ,  Yu-Yang Chang ,  Hua-Chi Cheng ,  Cheng-Chung Lee

IPC: B44C001/22 ,  C25F003/00 ,  H01J009/24 ,  H01L021/00

CPC classification number: B82Y10/00 ,  C25D13/00 ,  H01J3/021 ,  H01J9/025 ,  H01J2201/30469

Abstract: A manufacturing method for an electron-emitting source of triode structure, including forming a cathode layer on a substrate, forming a dielectric layer on the cathode layer, and positioning an opening in the dielectric layer to expose the cathode layer, wherein the opening has a surrounding region, forming a gate layer on the dielectric layer, except on the surrounding region, forming a hydrophilic layer in the opening, forming a hydrophobic layer on the gate layer and the surrounding region, wherein the hydrophobic layer contacts the ends of the hydrophilic layer, dispersing a carbon nanotube solution on the hydrophilic layer using ink jet printing, executing a thermal process step, and removing the hydrophobic layer. According to this method, carbon nanotubes are deposited over a large area in the gate hole.

Abstract translation: 一种用于三极管结构的电子发射源的制造方法，包括在衬底上形成阴极层，在阴极层上形成电介质层，并在电介质层中定位开口以露出阴极层，其中开口具有 在所述电介质层上形成除了所述周围区域之外的栅极层，在所述开口中形成亲水层，在所述栅极层和所述周围区域形成疏水层，其中所述疏水层与所述亲水层的端部接触 使用喷墨印刷将碳纳米管溶液分散在亲水层上，执行热处理步骤，并除去疏水层。 根据该方法，碳纳米管沉积在栅极孔中的大面积上。

公开(公告)号：US06498349B1

公开(公告)日：2002-12-24

申请号：US09368919

申请日：1999-08-05

Applicant: Clarence E. Thomas ,  Larry R. Baylor ,  Edgar Voelkl ,  Michael L. Simpson ,  Michael J. Paulus ,  Douglas H. Lowndes ,  John H. Whealton ,  John C. Whitson ,  John B. Wilgen

Inventor： Clarence E. Thomas ,  Larry R. Baylor ,  Edgar Voelkl ,  Michael L. Simpson ,  Michael J. Paulus ,  Douglas H. Lowndes ,  John H. Whealton ,  John C. Whitson ,  John B. Wilgen

IPC: H01J37073

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  H01J3/021 ,  H01J37/073 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/0635 ,  H01J2237/31786

Abstract: Systems and methods are described for addressable field emission array (AFEA) chips. A method of operating an addressable field-emission array, includes: generating a plurality of electron beams from a pluralitly of emitters that compose the addressable field-emission array; and focusing at least one of the plurality of electron beams with an on-chip electrostatic focusing stack. The systems and methods provide advantages including the avoidance of space-charge blow-up.

Abstract translation: 描述了可寻址场发射阵列（AFEA）芯片的系统和方法。 一种操作可寻址场致发射阵列的方法包括：从构成可寻址场致发射阵列的多个发射器产生多个电子束; 并且用片上静电聚焦叠层聚焦多个电子束中的至少一个。 这些系统和方法提供了避免空间电荷爆炸的优点。

公开(公告)号：US06411020B1

公开(公告)日：2002-06-25

申请号：US09510941

申请日：2000-02-22

Applicant: Zvi Yaniv ,  Ronald Charles Robinder

Inventor： Zvi Yaniv ,  Ronald Charles Robinder

IPC: H01J102

CPC classification number: H01J29/467 ,  H01J3/021 ,  H01J3/022 ,  H01J29/04 ,  H01J2329/00

Abstract: A plurality of field emission device cathodes each generate emission of electrons, which are then controlled and focused using various electrodes to produce an electron beam. Horizontal and vertical deflection techniques, similar to those used within a cathode ray tube, operate to scan the individual electron beams onto portions of a phosphor screen in order to generate images. The use of the plurality of field emission cathodes provides for a flatter screen depth than possible with a typical cathode ray tube.