公开(公告)号：US09953796B2

公开(公告)日：2018-04-24

申请号：US15098108

申请日：2016-04-13

Applicant: HRL Laboratories, LLC

Inventor： Biqin Huang ,  Christopher S. Roper ,  Tahir Hussain

IPC: H01J1/62 ,  H01J1/308 ,  H01J1/304 ,  H01J9/02 ,  H01J21/10

CPC classification number: H01J1/308 ,  H01J1/304 ,  H01J9/025 ,  H01J21/10

Abstract: A semiconductor power handling device, includes a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode by a nano-vacuum gap. An array of semiconductor power handling devices, each comprising a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode pillar by a nano-vacuum gap. The semiconductor power handling devices can be arranged as rows and columns and can be interconnected to meet the requirements of various applications. The array of power handling devices can be fabricated on a single substrate.

公开(公告)号：US09905389B2

公开(公告)日：2018-02-27

申请号：US15675835

申请日：2017-08-14

Applicant: BRITISH TELECOMMUNICATIONS public limited company

Inventor： Robert Ghanea-Hercock

IPC: H01J19/04 ,  H01J21/10 ,  H01J21/04 ,  B29C64/188 ,  H01J19/08 ,  B05D1/26 ,  B05D1/36 ,  B33Y80/00 ,  B33Y10/00 ,  B33Y30/00

CPC classification number: H01J19/04 ,  B05D1/265 ,  B05D1/36 ,  B29C64/00 ,  B29C64/188 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y80/00 ,  H01J19/08 ,  H01J21/04 ,  H01J21/10

Abstract: A method of manufacturing an article with integral active electronic component includes using an additive manufacturing process to: a) form a non-electrically conductive substrate; b) form a non-electrically conductive perforated layer having an aperture; c) form electrically conductive anode and cathode elements spaced in the aperture; d) deposit a conductive electrical connection to each of the elements suitable for imparting an electrical potential difference between the elements; and e) form a non-electrically conductive sealing layer atop the perforated layer so as to retain and seal the aperture in the perforated layer.

公开(公告)号：US09711287B2

公开(公告)日：2017-07-18

申请号：US14658794

申请日：2015-03-16

Applicant: Advanced Fusion Systems LLC

Inventor： Curtis A Birnbach

IPC: H01J9/04 ,  H01J35/06 ,  H01J35/08 ,  H01J35/16 ,  H01J21/10 ,  H05G1/22 ,  H01G4/35 ,  G05F1/10 ,  H01J5/02 ,  H01J7/16 ,  H01J19/82 ,  H02H9/02 ,  H02H3/08 ,  H02H9/08 ,  H01J19/24

CPC classification number: H01G4/35 ,  G05F1/10 ,  H01J5/02 ,  H01J7/16 ,  H01J19/24 ,  H01J19/42 ,  H01J19/54 ,  H01J19/70 ,  H01J19/82 ,  H01J21/10 ,  H02H3/08 ,  H02H9/02 ,  H02H9/08

Abstract: A high voltage, high current vacuum integrated circuit includes a common vacuum enclosure that includes at least two cold-cathode field emission electron tubes, and contains at least one internal vacuum pumping means, at least one exhaust tubulation, vacuum-sealed electrically-insulated feedthroughs, and internal electrical insulation. The cold-cathode field emission electron tubes are configured to operate at high voltage and high current and interconnected with each other to implement a circuit function.

公开(公告)号：US09620323B1

公开(公告)日：2017-04-11

申请号：US15388328

申请日：2016-12-22

Applicant: NORITAKE ITRON CORPORATION ,  NORITAKE CO., LIMITED ,  KORG INC.

Inventor： Kazunori Tatsuda ,  Tadami Maeda ,  Misa Yamanaka ,  Fumio Mieda

IPC: H01J17/24 ,  H01J19/70 ,  H01J61/26 ,  H01J19/38 ,  H01J19/12 ,  H01J19/32 ,  H01J19/08

CPC classification number: H01J19/38 ,  H01J19/08 ,  H01J19/12 ,  H01J19/32 ,  H01J19/70 ,  H01J21/10

Abstract: A vacuum tube includes a filament and two pairs of a grid and an anode. The filament is tensioned linearly and emits thermoelectrons. Both of the anodes are formed on a same face on a planar substrate. The filament is arranged parallel to the planar substrate at a position facing both of the anodes. Each of the grids is arranged, such that the grid faces the anode of a same pair at a first predetermined distance from the anode and has a second predetermined distance from the filament, between the anode and the filament. The vacuum tube further includes an intermediate filament fixing part fixing the filament at a position corresponding to an intermediate point between the anodes of the two pairs.

公开(公告)号：US09589758B2

公开(公告)日：2017-03-07

申请号：US15000392

申请日：2016-01-19

Applicant: NORITAKE ITRON CORPORATION ,  NORITAKE CO., LIMITED

Inventor： Kazunori Tatsuda ,  Tadami Maeda ,  Misa Yamanaka

IPC: H01J21/06 ,  H01J19/70 ,  H01J19/32 ,  H01J19/38 ,  H01J21/10

CPC classification number: H01J21/06 ,  H01J19/32 ,  H01J19/38 ,  H01J19/70 ,  H01J21/10

Abstract: An object of the present invention is to provide a vacuum tube with a structure close to that of an inexpensive and easily available vacuum fluorescent display which easily operates as an analog amplifier. A vacuum tube subject to the present invention comprises: a filament which is tensioned linearly and emits thermoelectrons, an anode arranged parallel to the filament, and a grid arranged between the filament and the anode such that the grid faces the anode. The present invention is characterized in that a distance between the filament and the grid is between 0.2 mm and 0.6 mm, including 0.2 mm and 0.6 mm.

Abstract translation: 本发明的一个目的是提供一种具有接近于便于操作的模拟放大器的便宜且容易获得的真空荧光显示器的结构的真空管。 根据本发明的真空管包括：线状拉伸并发射热电子的细丝，平行于灯丝布置的阳极和布置在灯丝和阳极之间的格栅，使得栅格面向阳极。 本发明的特征在于，细丝与网格之间的距离在0.2mm至0.6mm之间，包括0.2mm和0.6mm。

公开(公告)号：US20170032921A1

公开(公告)日：2017-02-02

申请号：US15291962

申请日：2016-10-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Davide Giuseppe PATTI ,  Gianleonardo GRASSO

IPC: H01J9/02 ,  H01J21/10 ,  H01J1/304

CPC classification number: H01J9/025 ,  G01K7/01 ,  H01J1/3044 ,  H01J21/10 ,  H01J21/105 ,  H01L29/12 ,  H01L29/66969 ,  H01L29/7827

Abstract: An integrated vacuum microelectronic structure is described as having a highly doped semiconductor substrate, a first insulating layer placed above said doped semiconductor substrate, a first conductive layer placed above said first insulating layer, a second insulating layer placed above said first conductive layer, a vacuum trench formed within said first and second insulating layers and extending to the highly doped semiconductor substrate, a second conductive layer placed above said vacuum trench and acting as a cathode, a third metal layer placed under said highly doped semiconductor substrate and acting as an anode, said second conductive layer is placed adjacent to the upper edge of said vacuum trench, the first conductive layer is separated from said vacuum trench by portions of said second insulating layer and is in electrical contact with said second conductive layer.

Abstract translation: 集成的真空微电子结构被描述为具有高度掺杂的半导体衬底，放置在所述掺杂半导体衬底之上的第一绝缘层，放置在所述第一绝缘层之上的第一导电层，放置在所述第一导电层上方的第二绝缘层，真空 形成在所述第一和第二绝缘层内并延伸到高掺杂半导体衬底的第二导电层，置于所述真空沟槽之上并用作阴极的第二导电层，置于所述高掺杂半导体衬底之下并用作阳极的第三金属层， 所述第二导电层邻近所述真空沟槽的上边缘放置，所述第一导电层通过所述第二绝缘层的一部分与所述真空沟槽分离，并与所述第二导电层电接触。

公开(公告)号：US20150187531A1

公开(公告)日：2015-07-02

申请号：US14658794

申请日：2015-03-16

Applicant: Advanced Fusion Systems LLC

Inventor： Curtis A. Birnbach

IPC: H01J7/16 ,  H01J5/02

CPC classification number: H01G4/35 ,  G05F1/10 ,  H01J5/02 ,  H01J7/16 ,  H01J19/24 ,  H01J19/42 ,  H01J19/54 ,  H01J19/70 ,  H01J19/82 ,  H01J21/10 ,  H02H3/08 ,  H02H9/02 ,  H02H9/08

Abstract: A high voltage, high current vacuum integrated circuit includes a common vacuum enclosure that includes at least two cold-cathode field emission electron tubes, and contains at least one internal vacuum pumping means, at least one exhaust tubulation, vacuum-sealed electrically-insulated feedthroughs, and internal electrical insulation. The cold-cathode field emission electron tubes are configured to operate at high voltage and high current and interconnected with each other to implement a circuit function.

Abstract translation: 高电压，大电流真空集成电路包括共同的真空外壳，其包括至少两个冷阴极场发射电子管，并且包含至少一个内部真空泵送装置，至少一个排气管，真空密封的电绝缘馈通 ，和内部电气绝缘。 冷阴极场致发射电子管被配置为在高电压和高电流下工作并彼此互连以实现电路功能。

公开(公告)号：US08890430B2

公开(公告)日：2014-11-18

申请号：US13577294

申请日：2011-07-15

Applicant: Tailiang Guo ,  Jianmin Yao ,  Zhixian Lin ,  Yun Ye ,  Zhilong Chen ,  Yongai Zhang ,  Sheng Xu ,  Liqin Hu

Inventor： Tailiang Guo ,  Jianmin Yao ,  Zhixian Lin ,  Yun Ye ,  Zhilong Chen ,  Yongai Zhang ,  Sheng Xu ,  Liqin Hu

IPC: H01J21/10 ,  H01J19/38 ,  G09G3/22 ,  H01J29/48 ,  H01J31/12

CPC classification number: H01J21/10 ,  G09G3/22 ,  G09G2230/00 ,  H01J19/38 ,  H01J29/481 ,  H01J31/127

Abstract: The present invention relates to display manufacturing technology, especially for a dielectric-free triode field emission display device based on double-gate/single-cathode type electron emission units and the device drive methods. This device comprises parallelly positioned anode and cathode/gate plates, during production, gate/cathode/gate electron emission units are set on the cathode/gate plate side by side. The spacing between cathode and gate electrodes is vacuum circumstance. For each cathode, an anode is positioned on the anode plate, facing the cathode. And the voltages applied on the cathode and gate electrodes are to scan and the anode voltage is to adjust the signal. When the electrodes on the cathode/gate plate take on fixed roles, fixed voltages are used to drive the device. When these electrodes on the cathode/gate plate can be used interchangeably as cathode or gate electrodes, respectively, pulse scanning method is used to drive the device.

Abstract translation: 本发明涉及显示器制造技术，特别涉及一种基于双栅/单阴极型电子发射单元的无电介质三极管场致发射显示器件及器件驱动方法。 该装置包括平行放置的阳极和阴极/栅极板，在制造期间，栅极/阴极/栅极电子发射单元并排设置在阴极/栅极板上。 阴极和栅电极之间的间距是真空环境。 对于每个阴极，阳极位于阳极板上，面向阴极。 并且施加在阴极和栅电极上的电压是扫描的，并且阳极电压是调整信号。 当阴极/栅极板上的电极发挥固定作用时，使用固定电压来驱动器件。 当阴极/栅极板上的这些电极可以分别用作阴极或栅电极时，使用脉冲扫描方法驱动器件。

公开(公告)号：US07938707B1

公开(公告)日：2011-05-10

申请号：US12168625

申请日：2008-07-07

Applicant: Charles A. Walker ,  Frank R. Trowbridge

Inventor： Charles A. Walker ,  Frank R. Trowbridge

IPC: H01J1/00 ,  H01J1/30 ,  H01J9/00

CPC classification number: H01J19/24 ,  H01J9/24 ,  H01J21/10

Abstract: Methods are disclosed for batch fabrication of vacuum switch tubes that reduce manufacturing costs and improve tube to tube uniformity. The disclosed methods comprise creating a stacked assembly of layers containing a plurality of adjacently spaced switch tube sub-assemblies aligned and registered through common layers. The layers include trigger electrode layer, cathode layer including a metallic support/contact with graphite cathode inserts, trigger probe sub-assembly layer, ceramic (e.g. tube body) insulator layer, and metallic anode sub-assembly layer. Braze alloy layers are incorporated into the stacked assembly of layers, and can include active metal braze alloys or direct braze alloys, to eliminate costs associated with traditional metallization of the ceramic insulator layers. The entire stacked assembly is then heated to braze/join/bond the stack-up into a cohesive body, after which individual switch tubes are singulated by methods such as sawing. The inventive methods provide for simultaneously fabricating a plurality of devices as opposed to traditional methods that rely on skilled craftsman to essentially hand build individual devices.

Abstract translation: 公开了用于批量制造真空开关管的方法，其降低制造成本并提高管与管的均匀性。 所公开的方法包括产生层叠的层叠组件，其包含通过公共层对准和配准的多个相邻间隔的开关管子组件。 这些层包括触发电极层，阴极层包括金属支撑体/与石墨阴极插入件的接触，触发器探针子组件层，陶瓷（例如管体）绝缘体层和金属阳极子组件层。 钎焊合金层被并入层叠的层叠组件中，并且可以包括活性金属钎焊合金或直接钎焊合金，以消除与陶瓷绝缘体层的传统金属化相关的成本。 然后将整个堆叠的组件加热以钎焊/接合/将叠层结合到粘合体中，之后通过诸如锯切的方法将各个开关管切割。 与传统方法相反，本发明的方法提供了同时制造多个装置，这些方法依靠技术熟练的手工基本上手工构建各个装置。

公开(公告)号：US07646149B2

公开(公告)日：2010-01-12

申请号：US10895980

申请日：2004-07-22

Applicant: Ron Naaman ,  Erez Halahmi

Inventor： Ron Naaman ,  Erez Halahmi

IPC: H01J40/06

CPC classification number: H01J21/10 ,  H01J3/021

Abstract: An electrons' emission device is presented. The device comprises an electrodes' arrangement including at least one Cathode electrode and at least one Anode electrode, the Cathode and Anode electrodes being arranged in a spaced-apart relationship; the device being configured to expose said at least one Cathode electrode to exciting illumination to thereby cause electrons' emission from said Cathode electrode, the device being operable as a photoemission switching device.

Abstract translation: 提出了电子发射装置。 该装置包括电极布置，其包括至少一个阴极电极和至少一个阳极电极，阴极和阳极电极以间隔的关系布置; 所述器件被配置为将所述至少一个阴极电极暴露于激发照明，从而引起来自所述阴极电极的电子发射，所述器件可操作为光电转换开关器件。