Abstract:
The present disclosure relates to a semiconductor substrate and a method for making the same. The semiconductor substrate includes an insulation layer, a first circuit layer, a second circuit layer, a plurality of conductive vias and a plurality of bumps. The first circuit layer is embedded in a first surface of the insulation layer, and exposed from the first surface of the insulation layer. The second circuit layer is located on a second surface of the insulation layer and electrically connected to the first circuit layer through the conductive vias. The bumps are directly located on part of the first circuit layer, where the lattice of the bumps is the same as that of the first circuit layer.
Abstract:
There is provided a wiring substrate. The wiring substrate includes: a heat sink; an insulating member on the heat sink; a wiring pattern embedded in the insulating member and including a first surface and a second surface opposite to the first surface, the second surface contacting the insulating member; and a metal layer on the first surface of the wiring pattern, wherein an exposed surface of the metal layer is flush with an exposed surface of the insulating member.
Abstract:
A method of making a multi-layer micro-wire structure includes providing a substrate having a substrate edge and first and second layers formed over the substrate. One or more micro-channels are imprinted in each of the first and second layers and first and second micro-wires located in the imprinted micro-channels, the micro-wires forming at least a portion of an exposed connection pad in each layer. The second layer edge is farther from the substrate edge than the first layer edge for at least a portion of the second layer edge so that the first connection pads are exposed through the second layer.
Abstract:
Some novel features pertain to a substrate that includes a first dielectric layer, a first interconnect, a first cavity, and a second interconnect. The first dielectric layer includes first and second surfaces. The first interconnect is embedded in the first dielectric layer. The first interconnect includes a first side and a second side. The first side is surrounded by the first dielectric layer, where at least a part of the second side is free of contact with the first dielectric layer. The first cavity traverses the first surface of the first dielectric layer to the second side of the first interconnect, where the first cavity overlaps the first interconnect. The second interconnect includes a third side and a fourth side, where the third side is coupled to the first surface of the first dielectric layer.
Abstract:
A method of forming a stacked-layer wiring includes forming first wettability variable layer on a substrate using material that changes surface energy by energy application; forming first conductive layer in or on the first wettability variable layer; forming second wettability variable layer on the first wettability variable layer using material that changes surface energy by energy application; forming concave portion to become wiring pattern of second conductive layer to the second wettability variable layer while concurrently forming high surface energy area on surface exposed by forming the concave portion by changing surface energy; forming via hole by exposing a part of the first conductive layer while concurrently forming high surface energy area on surface exposed by forming the via hole by changing surface energy; and applying conductive ink to the high surface energy area to form the second conductive layer and via simultaneously.
Abstract:
Greater planarity is achieved between surfaces of a conductive structure and a layer within which the conductive structure resides. A portion of the conductive structure protruding above the surface of the layer is selectively oxidized, at least in part, to form an oxidized portion. The oxidized portion is then removed, at least partially, to facilitate achieving greater planarity. The protruding portions may optionally be formed by selectively disposing conductive material over the conductive structure, when that the conductive structure is initially recessed below the surface of the layer. A further embodiment includes selectively oxidizing a portion of the conductive structure below the surface of the layer, removing at least some of the oxidized portion so that an upper surface of the conductive structure is below the upper surface of the layer, and planarizing the upper surface of the layer to the upper surface of the conductive structure.
Abstract:
A three-dimensional structure in which a wiring and a pad part are provided on a surface is provided. A recessed gutter for wiring and a hole for the pad part having a depth that is greater than a thickness of the recessed gutter for wiring are provided on the surface of the three-dimensional structure. The hole for the pad part is provided in succession with the recessed gutter for wiring. At least a part of a wiring conductor is embedded in the recessed gutter for wiring and in the hole for the pad part.
Abstract:
Greater planarity is achieved between surfaces of a conductive structure and a layer within which the conductive structure resides. A portion of the conductive structure protruding above the surface of the layer is selectively oxidized, at least in part, to form an oxidized portion. The oxidized portion is then removed, at least partially, to facilitate achieving greater planarity. The protruding portions may optionally be formed by selectively disposing conductive material over the conductive structure, when that the conductive structure is initially recessed below the surface of the layer. A further embodiment includes selectively oxidizing a portion of the conductive structure below the surface of the layer, removing at least some of the oxidized portion so that an upper surface of the conductive structure is below the upper surface of the layer, and planarizing the upper surface of the layer to the upper surface of the conductive structure.
Abstract:
Disclosed herein is a method of manufacturing a printed circuit board, comprising: preparing a first carrier including a first pattern formed on one side thereof; preparing a second carrier including a first solder resist layer and a second pattern sequentially formed on one side thereof; pressing the first carrier and the second carrier such that the first pattern is embedded in one side of an insulation layer and the second pattern is embedded in the other side of the insulation layer and then removing the first carrier and the second carrier to fabricate two substrates; attaching the two substrates to each other using an adhesion layer such that the first solder resist layers face each other; and forming a via for connecting the first pattern with the second pattern in the insulation layer, forming a second solder resist on the insulation layer provided with the first pattern, and then removing the adhesion layer.
Abstract:
An electrical conductor includes a substrate having micro-channels formed in the substrate. A plurality of spaced-apart first micro-wires is located on or in the micro-channels, the first micro-wires extending across the substrate in a first direction. A plurality of spaced-apart second micro-wires is located on or in the micro-channels, the second micro-wires extending across the substrate in a second direction different from the first direction. Each second micro-wire is electrically connected to at least two first micro-wires and at least one of the second micro-wires has a width less than the width of at least one of the first micro-wires.