公开(公告)号：US06396620B1

公开(公告)日：2002-05-28

申请号：US09702082

申请日：2000-10-30

Applicant: Scott H. Goodwin-Johansson

Inventor： Scott H. Goodwin-Johansson

IPC: G02B2600

CPC classification number: B81B3/0021 ,  B81B2203/0127 ,  B81C2201/0109 ,  B81C2201/056 ,  G02B26/02 ,  G02B26/0841 ,  G02B26/085

Abstract: An electromagnetic radiation shutter device driven by electrostatic forces comprises a stationary membrane capable of allowing electromagnetic radiation transmission therethrough, and a first and second flexible membrane comprising an electrode element and at least one biasing element. The first flexible membrane has a fixed portion attached to the underside of the stationary membrane and a distal portion adjacent to the fixed portion and released from the underside of the stationary membrane. The second flexible membrane has a fixed portion attached to the topside of the stationary membrane and a distal portion adjacent to the fixed portion and released from the topside of the stationary membrane. In operation, a voltage differential is established between the electrode element of the first flexible membrane and the electrode element of the second flexible membrane thereby moving the first and second flexible membranes relative to the stationary membrane. In a closed state (i.e. fully activated), the flexible membranes will be generally parallel to the stationary membrane and will be capable of deflecting electromagnetic radiation. In an open state (i.e. no voltage applied), the flexible membranes will generally be fully curled based on biasing in the flexible membranes induced during fabrication and/or imparted by material characteristics.

Abstract translation: 由静电力驱动的电磁辐射快门装置包括能够允许电磁辐射透射的固定膜，以及包括电极元件和至少一个偏压元件的第一和第二柔性膜。 第一柔性膜具有附接到固定膜的下侧的固定部分和与固定部分相邻并从固定膜的下侧释放的远侧部分。 第二柔性膜具有固定部分，固定部分固定在固定膜的顶面上，远侧部分与固定部分相邻并从固定膜顶部释放。 在操作中，在第一柔性膜的电极元件和第二柔性膜的电极元件之间建立电压差，从而使第一和第二柔性膜相对于固定膜移动。 在关闭状态（即完全激活）时，柔性膜将大致平行于固定膜并且能够偏转电磁辐射。 在打开状态（即没有施加电压）的情况下，柔性膜通常将基于在制造过程中诱导的柔性膜中的偏置和/或由材料特性赋予而完全卷曲。

公开(公告)号：US06238580B1

公开(公告)日：2001-05-29

申请号：US09460738

申请日：1999-12-14

Applicant: Robert C. Cole ,  Ruby E. Robertson ,  Allyson D. Yarbrough

Inventor： Robert C. Cole ,  Ruby E. Robertson ,  Allyson D. Yarbrough

IPC: H01L2102

CPC classification number: B81C1/00944 ,  B81C2201/0109 ,  B81C2201/0133

Abstract: A wet and vapor acid etching method releases a microelectromechanical systems (MEMS) structure from a substrate by dissolving a sacrificial layer disposed between the MEMS and the substrate. The sacrificial layer may be a silicon dioxide (SiO2) layer having a field portion over which the MEMS does not extend and a support portion over which the MEMS does extend. The field portion of the SiO2 layer is quickly removed using conventional wet hydrofluoric (HF) etching followed by rinsing and drying and then the support portion is removed using conventional vapor HF etching from a solution greater than 45% by weight percent. The wet HF chemical etch quickly removes the large field portion of the sacrificial layer. The HF vapor etch removes the small support portion of the sacrificial layer below the MEMS to release the MEMS from the substrate without stiction thereby preventing damage to the MEMS when released.

Abstract translation: 湿和蒸汽酸腐蚀方法通过溶解设置在MEMS和衬底之间的牺牲层从衬底释放微机电系统（MEMS）结构。 牺牲层可以是具有MEMS不延伸的场部分的二氧化硅（SiO 2）层和MEMS确定延伸的支撑部分。 使用常规的湿氢氟酸（HF）蚀刻，然后漂洗和干燥，迅速除去SiO 2层的场部分，然后使用常规蒸气HF蚀刻从大于45重量％的溶液中除去支持部分。 湿HF化学蚀刻快速去除牺牲层的大场部分。 HF蒸汽蚀刻去除MEMS下面的牺牲层的小支撑部分，以从基板上释放MEMS而不产生粘性，从而防止在释放时损坏MEMS。

公开(公告)号：US06184051B2

公开(公告)日：2001-02-06

申请号：US09479189

申请日：2000-01-07

Applicant: Paolo Ferrari ,  Benedetto Vigna

Inventor： Paolo Ferrari ,  Benedetto Vigna

IPC: H01L2100

CPC classification number: H01L21/764 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00246 ,  B81C2201/0109 ,  B81C2201/0177 ,  B81C2203/0735 ,  B81C2203/0778 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/76202

Abstract: A movable mass forming a seismic mass is formed starting from an epitaxial layer and is covered by a weighting region of tungsten which has high density. To manufacture the mass, buried conductive regions are formed in the substrate. Then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions are formed on the buried conductive regions so as to partially cover them. An epitaxial layer is then grown, using a nucleus region. A tungsten layer is deposited and defined and, using a silicon carbide layer as mask, the suspended structure is defined. Finally, the sacrificial region is removed, forming an air gap.

Abstract translation: 从外延层开始形成形成地震质量块的移动体，并且由具有高密度的钨的加权区域覆盖。 为了制造质量，在衬底中形成掩埋的导电区域。 然后，同时，在要形成可移动物体的区域中形成牺牲区域，并且在掩埋的导电区域上形成氧化物绝缘区域，以便部分地覆盖它们。 然后使用核区域生长外延层。 沉积和限定钨层，并且使用碳化硅层作为掩模，限定悬浮结构。 最后，去除牺牲区域，形成气隙。

公开(公告)号：US6137120A

公开(公告)日：2000-10-24

申请号：US918010

申请日：1997-08-27

Applicant: Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

Inventor： Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

IPC: B81B3/00 ,  C23C16/48 ,  C23C16/511 ,  C23C16/56 ,  G01L9/00 ,  G01P15/08 ,  H01H59/00 ,  H01J37/32 ,  H01L27/12 ,  H01L31/0376 ,  H01L31/078 ,  H01L31/18 ,  H02N1/00 ,  H01L29/04 ,  H01L31/036

CPC classification number: H01J37/32678 ,  B81C1/0038 ,  C23C16/48 ,  C23C16/486 ,  C23C16/511 ,  C23C16/56 ,  G01L9/0042 ,  G01P15/0802 ,  H01L27/12 ,  H01L27/1203 ,  H01L31/03762 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/186 ,  H02N1/002 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C2201/0109 ,  G02F2001/136281 ,  H01H59/0009 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

Abstract translation: 为了容易且精确地制造包括由单晶材料制成且具有复杂结构的构件的微加工机构，（100）面向上的单晶Si衬底（1102）的最上层（1104） 从多个规定方向对Ne原子电流进行照射，使得最上层（1104）的晶体取向被转换为（111）面向上方向的取向。 采用掩模构件（106）作为屏蔽构件，从其底面各向异性地蚀刻衬底（1102），从而形成V形槽（1112）。 此时，最上层（1104）用作蚀刻停止器。 因此，可以容易地制造具有均匀厚度的单晶隔膜的微加工机。 具有复合构件的微机械，例如由单晶材料制成的图可以容易地通过无接合制造。

公开(公告)号：US6106734A

公开(公告)日：2000-08-22

申请号：US917267

申请日：1997-08-25

Applicant: Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

Inventor： Masahiro Shindo ,  Daisuke Kosaka ,  Tetsuo Hikawa ,  Akira Takata ,  Yukihiro Ukai ,  Takashi Sawada ,  Toshifumi Asakawa

IPC: B81B3/00 ,  C23C16/48 ,  C23C16/511 ,  C23C16/56 ,  G01L9/00 ,  G01P15/08 ,  H01H59/00 ,  H01J37/32 ,  H01L27/12 ,  H01L31/0376 ,  H01L31/078 ,  H01L31/18 ,  H02N1/00 ,  H01L21/302

CPC classification number: H01J37/32678 ,  B81C1/0038 ,  C23C16/48 ,  C23C16/486 ,  C23C16/511 ,  C23C16/56 ,  G01L9/0042 ,  G01P15/0802 ,  H01L27/12 ,  H01L27/1203 ,  H01L31/03762 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/186 ,  H02N1/002 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C2201/0109 ,  G02F2001/136281 ,  H01H59/0009 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diaphragm which is made of a single-crystalline material can be easily manufactured through no junction.

Abstract translation: 为了容易且精确地制造包括由单晶材料制成且具有复杂结构的构件的微加工机构，（100）面向上的单晶Si衬底（1102）的最上层（1104） 从多个规定方向对Ne原子电流进行照射，使得最上层（1104）的晶体取向被转换为（111）面向上方向的取向。 采用掩模构件（106）作为屏蔽构件，从其底面各向异性地蚀刻衬底（1102），从而形成V形槽（1112）。 此时，最上层（1104）用作蚀刻停止器。 因此，可以容易地制造具有均匀厚度的单晶隔膜的微加工机。 具有由单晶材料制成的诸如隔膜的复杂构件的微加工机可以容易地通过无接合制造。

公开(公告)号：US6096656A

公开(公告)日：2000-08-01

申请号：US339715

申请日：1999-06-24

Applicant: Carolyn M. Matzke ,  Carol I. H. Ashby ,  Monica M. Bridges ,  Ronald P. Manginell

Inventor： Carolyn M. Matzke ,  Carol I. H. Ashby ,  Monica M. Bridges ,  Ronald P. Manginell

IPC: B81C1/00 ,  H01L21/00

CPC classification number: B81C1/00071 ,  B81C1/00436 ,  G01N27/44791 ,  G01N30/6095 ,  B81B2201/058 ,  B81C2201/0109

Abstract: A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.

Abstract translation: 公开了一种在衬底上形成一个或多个流体微通道的方法，其与在衬底上形成集成电路相兼容。 微通道可以形成在衬底的上表面下方，上表面上方或两者。 通过在由牺牲材料（例如光致抗蚀剂）形成的模具上沉积氮氧化硅覆盖层而形成微通道，后者可以被去除。 使用高密度等离子体（例如电子回旋共振等离子体或电感耦合等离子体）在低温（<100℃），优选在室温附近沉积氧氮化硅。 在本发明的一些实施例中，微通道可以用氮氧化硅完全衬里，以向其中的流体呈现均匀的材料组成。 本发明具有形成用于色谱和电泳的微通道的应用。 此外，微通道可用于电动泵送，也可用于局部或全局衬底冷却。

公开(公告)号：US6090638A

公开(公告)日：2000-07-18

申请号：US113979

申请日：1998-07-10

Applicant: Benedetto Vigna ,  Paolo Ferrari ,  Marco Ferrera ,  Pietro Montanini

Inventor： Benedetto Vigna ,  Paolo Ferrari ,  Marco Ferrera ,  Pietro Montanini

IPC: B81B3/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L29/84 ,  H02L23/48

CPC classification number: H01L21/764 ,  B81C1/00246 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  H01L21/76202 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0735 ,  G01P2015/0814

Abstract: A sensor having high sensitivity is formed using a suspended structure with a high-density tungsten core. To manufacture it, a sacrificial layer of silicon oxide, a polycrystal silicon layer, a tungsten layer and a silicon carbide layer are deposited in succession over a single crystal silicon body. The suspended structure is defined by selectively removing the silicon carbide, tungsten and polycrystal silicon layers. Then spacers of silicon carbide are formed which cover the uncovered ends of the tungsten layer, and the sacrificial layer is then removed.

Abstract translation: 使用具有高密度钨芯的悬置结构形成具有高灵敏度的传感器。 为了制造它，将氧化硅牺牲层，多晶硅层，钨层和碳化硅层相继沉积在单晶硅体上。 通过选择性地去除碳化硅，钨和多晶硅层来限定悬浮结构。 然后形成覆盖钨层的未覆盖端的碳化硅间隔物，然后除去牺牲层。

公开(公告)号：US6030515A

公开(公告)日：2000-02-29

申请号：US121081

申请日：1998-07-23

Applicant: Klaus Heyers ,  Bernhard Elsner

Inventor： Klaus Heyers ,  Bernhard Elsner

IPC: H01L21/302 ,  B81B3/00 ,  C23F4/00 ,  C25D1/00 ,  C25D1/08 ,  C25D1/10 ,  H01L21/283 ,  H01L21/3065 ,  H01L21/768 ,  C25D5/02

CPC classification number: B81C1/0019 ,  B81B3/0086 ,  C25D1/08 ,  H01L21/76879 ,  B81B2203/033 ,  B81C2201/0109

Abstract: A method for fabricating metal micropatterns. Trenches are introduced into a polymer layer. These trenches are filled with the metal micropatterns using an electroplating process. Before the deposition of the metal micropatterns, the side walls of the trenches are covered with insulating layers which adhere to the metal micropatterns after the polymer layer is removed.

Abstract translation: 金属微图案的制造方法。 将沟槽引入聚合物层。 这些沟槽使用电镀工艺填充金属微图案。 在沉积金属微图案之前，沟槽的侧壁被绝缘层覆盖，绝缘层在聚合物层被去除之后粘附到金属微图案上。

公开(公告)号：US5792675A

公开(公告)日：1998-08-11

申请号：US730257

申请日：1996-10-15

Applicant: Michael Offenberg

Inventor： Michael Offenberg

IPC: B81B3/00 ,  G01P15/08 ,  G01P15/125 ,  H01L49/00 ,  H01L21/00

CPC classification number: B81B3/0086 ,  B81B3/0035 ,  B81B3/0078 ,  B81C1/00595 ,  G01P15/0802 ,  G01P15/125 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/0136 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/016 ,  G01P2015/0814

Abstract: In an accelerometer sensor of crystalline material, whose components are composed partly of monocrystalline and partly of polycrystalline material, a band-shaped seismic mass preferably is composed of polycrystalline material, whose suspension by means of suspension segments of monocrystalline material at the end regions permits a movement in the longitudinal direction upon the occurrence of an acceleration. Parallel plates extend from this mass at right angles to their longitudinal direction and, together with additional plates, which run parallel to said plates and are anchored at a base, form a capacitor arrangement and are composed, in particular, of monocrystalline material. At least the monocrystalline material is doped to attain an electric conductivity. When lightly doped, the long and thin plates and suspension segments have a high conductivity, given a very small mechanical prestressing, and can easily be isotropically undercut. The polycrystalline formation of the seismic mass can be designed to be very wide and large by etching away an underlying sacrificial oxide.

Abstract translation: 在结晶材料的加速度传感器中，其部件部分由单晶组成，部分由多晶材料组成，带状地震质量体优选地由多晶材料组成，其结晶区域的单晶材料悬浮段的悬浮液允许 发生加速时的纵向移动。 平行板从该质量块垂直于其纵向方向延伸，并且与另外的板一起平行于所述板并锚定在基座上，形成电容器布置，并且特别地由单晶材料组成。 至少单晶材料被掺杂以获得导电性。 当轻掺杂时，长且薄的板和悬浮段具有高导电性，给定非常小的机械预应力，并且可以容易地各向同性地切削。 通过蚀刻掉潜在的牺牲氧化物，可以将地震块的多晶形成设计得非常宽和大。

公开(公告)号：US5789264A

公开(公告)日：1998-08-04

申请号：US716761

申请日：1996-09-23

Applicant: Jae-Hyuk Chung

Inventor： Jae-Hyuk Chung

IPC: B81B3/00 ,  G02B5/08 ,  G02B26/08 ,  G03B21/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/316 ,  H01L41/09 ,  H01L21/265

CPC classification number: B81C1/00214 ,  B81B3/0083 ,  G02B26/0858 ,  B81B2201/042 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2201/016

Abstract: An inventive method for the manufacture of an array of thin film actuated mirrors includes the steps of: providing an active matrix; forming a plurality of insulating layers having a planarized top surface on top of the active matrix; forming a thin film sacrificial layer having an array of empty cavities on the planarized top surface of the plurality of insulating layers; forming an array of actuating structures on top of the thin film sacrificial layer including the empty cavities, each of the actuating structures including a first thin film electrode, a thin film electrodisplacive member, a second thin film electrode, an elastic member and a conduit; and removing the thin film sacrificial layer, thereby forming the array of thin film actuated mirrors. Since the thin film layers constituting each of the actuating structures are formed on the planarized top surface of the insulating layers, the thin film layers constituting each of the actuating structures are flat, allowing the first thin film electrode placed on top thereof, which also acts as a mirror, to have a flat top surface, thereby increasing the overall optical efficiency and performance of the array.

Abstract translation: 用于制造薄膜致动反射镜阵列的创新方法包括以下步骤：提供有源矩阵; 在所述有源矩阵的顶部上形成具有平坦化顶表面的多个绝缘层; 在所述多个绝缘层的平坦化顶表面上形成具有空腔阵列的薄膜牺牲层; 在包括空腔的薄膜牺牲层的顶部上形成致动结构的阵列，每个致动结构包括第一薄膜电极，薄膜电致位移元件，第二薄膜电极，弹性元件和导管; 并去除薄膜牺牲层，从而形成薄膜致动反射镜阵列。 由于构成每个致动结构的薄膜层形成在绝缘层的平坦化顶表面上，所以构成每个致动结构的薄膜层是平坦的，允许第一薄膜电极放置在顶部，其也起作用 作为镜子，具有平坦的顶表面，从而增加阵列的整体光学效率和性能。