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公开(公告)号:US6045712A
公开(公告)日:2000-04-04
申请号:US30540
申请日:1998-02-23
Applicant: Allyson D. Yarbrough , Samuel S. Osofsky , Ruby E. Robertson , Robert C. Cole
Inventor: Allyson D. Yarbrough , Samuel S. Osofsky , Ruby E. Robertson , Robert C. Cole
CPC classification number: H01Q15/141 , H01Q15/142
Abstract: A method of manufacturing a micromachined reflector antenna onto a substrate firstly etches a reflector aperture surface defining a dish cavity in an oxide layer and secondly rotates a hinge over the reflector aperture surface with the hinge being used as the reflector central feed. The micromachined reflector can be made into an array of reflector antennas and integrated onto a single substrate with front end receiver circuits operating as a high frequency receiver on a chip reduced in size and cost and operating at hundreds of GHz.
Abstract translation: 将微加工反射器天线制造到衬底上的方法首先蚀刻在氧化物层中限定皿腔的反射器孔表面,并且其中铰链在反射器孔表面上旋转,铰链用作反射器中心进料。 微加工反射器可以制成反射器天线的阵列,并集成到单个基板上,前端接收器电路作为芯片上的高频接收器工作,尺寸和成本降低,并以数百GHz的速度工作。
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公开(公告)号:US6008776A
公开(公告)日:1999-12-28
申请号:US28584
申请日:1998-02-18
Applicant: Allyson D. Yarbrough , Samuel S. Osofsky , Ruby E. Robertson , Robert C. Cole
Inventor: Allyson D. Yarbrough , Samuel S. Osofsky , Ruby E. Robertson , Robert C. Cole
CPC classification number: H01Q15/141 , H01Q19/13 , H01Q23/00
Abstract: A micromachined reflector antenna system is integrated onto a substrate by firstly etching a reflector aperture surface defining a dish cavity in an oxide layer and secondly rotating a hinge over the reflector aperture surface with the hinge being used as the reflector central feed. The micromachined reflector antenna system can be made with an array of reflector antennas and integrated onto a single substrate with front end receiver circuits operating as a high frequency receiver on a chip with reduced size and cost and operating at hundreds of GHz.
Abstract translation: 微机械加工的反射器天线系统通过首先蚀刻在氧化物层中限定盘腔的反射器孔表面而被集成到衬底上,并且其中铰链在反射器孔表面上旋转,铰链用作反射器中心馈送。 微加工反射器天线系统可以由反射器天线阵列制成,并集成到单个基板上,前端接收器电路作为芯片上的高频接收器工作,尺寸和成本都在降低,成本在数百GHz以上。
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公开(公告)号:US06238580B1
公开(公告)日:2001-05-29
申请号:US09460738
申请日:1999-12-14
Applicant: Robert C. Cole , Ruby E. Robertson , Allyson D. Yarbrough
Inventor: Robert C. Cole , Ruby E. Robertson , Allyson D. Yarbrough
IPC: H01L2102
CPC classification number: B81C1/00944 , B81C2201/0109 , B81C2201/0133
Abstract: A wet and vapor acid etching method releases a microelectromechanical systems (MEMS) structure from a substrate by dissolving a sacrificial layer disposed between the MEMS and the substrate. The sacrificial layer may be a silicon dioxide (SiO2) layer having a field portion over which the MEMS does not extend and a support portion over which the MEMS does extend. The field portion of the SiO2 layer is quickly removed using conventional wet hydrofluoric (HF) etching followed by rinsing and drying and then the support portion is removed using conventional vapor HF etching from a solution greater than 45% by weight percent. The wet HF chemical etch quickly removes the large field portion of the sacrificial layer. The HF vapor etch removes the small support portion of the sacrificial layer below the MEMS to release the MEMS from the substrate without stiction thereby preventing damage to the MEMS when released.
Abstract translation: 湿和蒸汽酸腐蚀方法通过溶解设置在MEMS和衬底之间的牺牲层从衬底释放微机电系统(MEMS)结构。 牺牲层可以是具有MEMS不延伸的场部分的二氧化硅(SiO 2)层和MEMS确定延伸的支撑部分。 使用常规的湿氢氟酸(HF)蚀刻,然后漂洗和干燥,迅速除去SiO 2层的场部分,然后使用常规蒸气HF蚀刻从大于45重量%的溶液中除去支持部分。 湿HF化学蚀刻快速去除牺牲层的大场部分。 HF蒸汽蚀刻去除MEMS下面的牺牲层的小支撑部分,以从基板上释放MEMS而不产生粘性,从而防止在释放时损坏MEMS。
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