中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

1828 records (took 0.024 seconds)

    METHOD FOR MANUFACTURING A PROTECTIVE LAYER AGAINST HF ETCHING, SEMICONDUCTOR DEVICE PROVIDED WITH THE PROTECTIVE LAYER AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
    162.
    发明申请
    METHOD FOR MANUFACTURING A PROTECTIVE LAYER AGAINST HF ETCHING, SEMICONDUCTOR DEVICE PROVIDED WITH THE PROTECTIVE LAYER AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 有权
    用于制造抗蚀层的保护层的方法，用保护层提供的半导体器件及制造半导体器件的方法

    公开(公告)号：US20140231937A1

    公开(公告)日：2014-08-21

    申请号：US14262437

    申请日：2014-04-25

    Applicant: STMicroelectronics S.r.l.

    Inventor： Stefano Losa ,  Raffaella Pezzuto ,  Roberto Campedelli ,  Matteo Perletti ,  Luigi Esposito ,  Mikel Azpeitia Urquia

    IPC: B81C1/00 ,  B81B7/00

    CPC classification number: H01L21/02178 ,  B81B7/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00595 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/053 ,  H01L21/0228

    Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer; forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminium oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

    Abstract translation: 一种用于制造用于保护中间结构层以防止用氢氟酸蚀刻的保护层的方法，所述中间结构层由可被氢氟酸蚀刻或损坏的材料制成，所述方法包括以下步骤：形成第一层 氧化铝，通过原子层沉积在中间结构层上; 在第一氧化铝层上进行热结晶处理，形成第一中间保护层; 通过原子层沉积在第一中间保护层之上形成第二层氧化铝; 并在第二氧化铝层上进行热结晶处理，形成第二中间保护层，从而完成保护层的形成。 形成保护层的方法可以用于例如陀螺仪或加速度计等惯性传感器的制造步骤。

    MEMS PROCESS AND DEVICE
    164.
    发明申请
    MEMS PROCESS AND DEVICE 有权
    MEMS工艺和器件

    公开(公告)号：US20140191344A1

    公开(公告)日：2014-07-10

    申请号：US14203131

    申请日：2014-03-10

    Applicant: Wolfson Microelectronics plc

    Inventor： Anthony Bernard Traynor ,  Richard Ian Laming ,  Tsjerk H. Hoekstra

    IPC: B81B3/00

    CPC classification number: H04R19/04 ,  B81B3/0021 ,  B81B3/0072 ,  B81B3/0094 ,  B81B2201/00 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  H01L27/00 ,  H04R19/00 ,  H04R19/005 ,  H04R23/00 ,  H04R31/00 ,  H04R2499/11

    Abstract: A method of fabricating a micro-electrical-mechanical system (MEMS) transducer comprises the steps of forming a membrane on a substrate, and forming a back-volume in the substrate. The step of forming a back-volume in the substrate comprises the steps of forming a first back-volume portion and a second back-volume portion, the first back-volume portion being separated from the second back-volume portion by a step in a sidewall of the back-volume. The cross-sectional area of the second back-volume portion can be made greater than the cross-sectional area of the membrane, thereby enabling the back-volume to be increased without being constrained by the cross-sectional area of the membrane . The back-volume may comprise a third back-volume portion. The third back-volume portion enables the effective diameter of the membrane to be formed more accurately.

    Abstract translation: 制造微机电系统（MEMS）换能器的方法包括以下步骤：在衬底上形成膜，并在衬底中形成后体积。 在基板中形成后部体积的步骤包括以下步骤：形成第一后部体积部分和第二背部体积部分，第一后部体积部分与第二背部体积部分分离， 背部体积的侧壁。 第二后部容积部分的横截面面积可以大于膜的横截面面积，从而能够增加后部体积，而不受膜的横截面面积的约束。 背部容积可以包括第三后部体积部分。 第三后部体积部分能够更准确地形成膜的有效直径。

    REDUCING MEMS STICTION BY DEPOSITION OF NANOCLUSTERS
    165.
    发明申请
    REDUCING MEMS STICTION BY DEPOSITION OF NANOCLUSTERS 有权
    通过沉积纳米微粒的方法减少MEMS

    公开(公告)号：US20140167189A1

    公开(公告)日：2014-06-19

    申请号：US13718614

    申请日：2012-12-18

    Applicant: Robert F. Steimle ,  Ruben B. Montez

    Inventor： Robert F. Steimle ,  Ruben B. Montez

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81B3/001 ,  B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0096 ,  B81C2201/115 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

    Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters. When a next portion of the MEMS device is formed on the sacrificial layer, this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.

    Abstract translation: 提供了一种用于通过减小可以紧密接触的两个表面之间的表面积来减小MEMS器件中的静摩擦的机构。 通过增加一个或两个表面的表面粗糙度来实现接触表面积的减小。 通过在用于形成MEMS器件的牺牲层上形成微掩模层，然后蚀刻牺牲层的表面来提供增加的粗糙度。 微掩模层可以使用纳米团簇形成。 当MEMS器件的下一部分形成在牺牲层上时，该部分将通过蚀刻工艺承受赋予牺牲层的粗糙度特性。 较粗糙的表面减小了可用于MEMS器件中的接触的表面积，并且进而降低了可赋予粘性的面积。

    SPRING FOR MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICE
    166.
    发明申请
    SPRING FOR MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICE 审中-公开
    微电子系统（MEMS）器件的弹簧

    公开(公告)号：US20140144232A1

    公开(公告)日：2014-05-29

    申请号：US13687424

    申请日：2012-11-28

    Applicant: Yizhen Lin ,  Jan Mehner ,  Michael Naumann

    Inventor： Yizhen Lin ,  Jan Mehner ,  Michael Naumann

    IPC: G01C19/56

    CPC classification number: G01C19/5733 ,  B81B3/0051 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/0163 ,  G01C19/5621 ,  G01C19/5656 ,  G01C19/5712

    Abstract: A MEMS device (20) includes a substrate (28) and a drive mass (30) configured to undergo oscillatory motion within a plane (24) substantially parallel to a surface (50) of the substrate (28). The sensor (20) further includes drive springs (56), each of which includes a principal beam (70) and a flexion beam (72) coupled an end (74) of the principal beam (70). The flexion beam (72) is anchored to the drive mass (30) or the substrate (28). The flexion beam (72) exhibits a width (90) that is less than a width (88) of the principal beam (70). In response to oscillatory drive motion, the flexion beam (72) flexes so that the principal beam (70) rotates about a pivot point (96) within the plane (24). Thus, out-of-plane movement of the drive mass (30) is reduced thereby suppressing quadrature error.

    Abstract translation: MEMS器件（20）包括衬底（28）和驱动质量块（30），驱动质量块构造成在基本上平行于衬底（28）的表面（50）的平面（24）内经历振荡运动。 传感器（20）还包括驱动弹簧（56），每个驱动弹簧包括主梁（70）和与主梁（70）的端部（74）相连的弯曲梁（72）。 屈曲梁（72）被锚固到驱动块（30）或基底（28）上。 屈曲梁（72）表现出小于主梁（70）的宽度（88）的宽度（90）。 响应于振荡驱动运动，屈曲梁（72）弯曲，使得主梁（70）围绕平面（24）内的枢转点（96）旋转。 因此，减小驱动质量块（30）的平面外运动，从而抑制正交误差。

    Vertical sensor assembly method
    167.
    发明授权
    Vertical sensor assembly method 有权
    垂直传感器组装方法

    公开(公告)号：US08703543B2

    公开(公告)日：2014-04-22

    申请号：US12502712

    申请日：2009-07-14

    Applicant: Hong Wan ,  Ryan W. Rieger ,  Michael J. Bohlinger

    Inventor： Hong Wan ,  Ryan W. Rieger ,  Michael J. Bohlinger

    IPC: H01L23/488 ,  H01L21/768 ,  H01B5/00 ,  H01L23/498

    CPC classification number: B81B3/0054 ,  B81B2201/0235 ,  B81C2203/035 ,  H01L2224/16225

    Abstract: A method to vertically bond a chip to a substrate is provided. The method includes forming a metal bar having a linear aspect on the substrate, forming a solder paste layer over the metal bar to form a solder bar, forming a plurality of metal pads on the substrate, and forming a solder paste layer over the plurality of metal pads to form a plurality of solder pads on the substrate. Each of the plurality of solder pads is offset from a long edge the solder bar by an offset-spacing. The chip to be vertically bonded to the substrate has a vertical-chip thickness fractionally less than the offset-spacing. The chip to be vertically bonded fits between the plurality of solder pads and the solder bar. The solder bar enables alignment of the chip to be vertically bonded.

    Abstract translation: 提供了将芯片垂直结合到基板的方法。 该方法包括在衬底上形成具有线性方面的金属棒，在金属棒上形成焊膏层以形成焊料条，在衬底上形成多个金属焊盘，并在多个焊盘上形成焊膏层 金属焊盘，以在衬底上形成多个焊盘。 多个焊盘中的每一个从焊料条的长边偏移偏移间隔。 要垂直粘合到基板的芯片具有小于偏移间距的垂直芯片厚度。 要垂直粘合的芯片装配在多个焊盘和焊条之间。 焊条可使芯片对准垂直焊接。

    MEMS Devices and Methods for Forming the Same
    168.
    发明申请
    MEMS Devices and Methods for Forming the Same 有权
    MEMS器件及其形成方法

    公开(公告)号：US20140103462A1

    公开(公告)日：2014-04-17

    申请号：US14132328

    申请日：2013-12-18

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Te-Hao Lee ,  Yuan-Chih Hsieh

    IPC: B81B3/00

    CPC classification number: B81B3/0021 ,  B81B2201/0235 ,  B81B2207/098 ,  B81C1/00301 ,  G01P15/0802 ,  G01P15/125 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

    Abstract: A method includes forming a Micro-Electro-Mechanical System (MEMS) device on a front surface of a substrate. After the step of forming the MEMS device, a through-opening is formed in the substrate, wherein the through-opening is formed from a backside of the substrate. The through-opening is filled with a dielectric material, which insulates a first portion of the substrate from a second portion of the substrate. An electrical connection is formed on the backside of the substrate. The electrical connection is electrically coupled to the MEMS device through the first portion of the substrate.

    Abstract translation: 一种方法包括在基板的前表面上形成微电子机械系统（MEMS）装置。 在形成MEMS器件的步骤之后，在衬底中形成通孔，其中通孔由衬底的背面形成。 通孔填充有电介质材料，其将衬底的第一部分与衬底的第二部分绝缘。 在基板的背面形成电连接。 电连接通过衬底的第一部分电耦合到MEMS器件。

    Three phase capacitance-based sensing
    170.
    发明授权
    Three phase capacitance-based sensing 有权
    三相电容式感应

    公开(公告)号：US08661901B2

    公开(公告)日：2014-03-04

    申请号：US13257386

    申请日：2009-03-19

    Applicant: Robert G. Walmsley

    Inventor： Robert G. Walmsley

    IPC: G01P15/125 ,  G01C15/08

    CPC classification number: G01P15/125 ,  B81B3/0086 ,  B81B7/008 ,  B81B2201/0235 ,  B81B2203/0136 ,  G01P15/131 ,  G01P15/18 ,  G01P2015/0814 ,  G01P2015/082

    Abstract: Various systems and methods for sensing are provided. In one embodiment, a sensing system is provided that includes a first electrode array disposed on a proof mass, and a second electrode array disposed on a planar surface of a support structure. The proof mass is attached to the support structure via a compliant coupling such that the first electrode array is positioned substantially parallel to and faces the second electrode array and the proof mass is capable of displacement relative to the support structure. The first electrode array includes a plurality of first patterns of electrodes and the second electrode array includes a plurality of second patterns of electrodes. The sensing system further includes circuitry configured to provide an input voltage to each of the second patterns of electrodes to produce an electrical null position for the first electrode array.

    Abstract translation: 提供了用于感测的各种系统和方法。 在一个实施例中，提供了一种感测系统，其包括设置在检测质量块上的第一电极阵列和设置在支撑结构的平坦表面上的第二电极阵列。 检测质量通过柔性联接件附接到支撑结构，使得第一电极阵列基本上平行于第二电极阵列并面对第二电极阵列，并且检测质量块能够相对于支撑结构移位。 第一电极阵列包括多个电极的第一图案，第二电极阵列包括多个第二图案的电极。 感测系统还包括被配置为向每个第二电极图形提供输入电压以产生第一电极阵列的电零位置的电路​​。

Patent Agency Ranking