公开(公告)号：US20140273511A1

公开(公告)日：2014-09-18

申请号：US13841694

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Richard A. Farrell ,  Gerard M. Schmid ,  xU Ji

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0276

Abstract: Methods for creating chemical guide patterns by DSA lithography for fabricating an integrated circuit are provided. In one example, an integrated circuit includes forming a bifunctional brush layer of a polymeric material overlying an anti-reflective coating on a semiconductor substrate. The polymeric material has a neutral polymeric block portion and a pinning polymeric block portion that are coupled together. The bifunctional brush layer includes a neutral layer that is formed of the neutral polymeric block portion and a pinning layer that is formed of the pinning polymeric block portion. A portion of the neutral layer or the pinning layer is selectively removed to define a chemical guide pattern. A block copolymer layer is deposited overlying the chemical guide pattern. The block copolymer layer is phase separated to define a nanopattern that is registered to the chemical guide pattern.

Abstract translation: 提供了通过DSA光刻产生化学引导图案以制造集成电路的方法。 在一个示例中，集成电路包括形成覆盖半导体衬底上的抗反射涂层的聚合材料的双功能刷层。 聚合物材料具有中性聚合物嵌段部分和联结在一起的钉扎聚合物嵌段部分。 双功能刷层包括由中性聚合物嵌段部分形成的中性层和由钉扎聚合物嵌段部分形成的钉扎层。 选择性地去除中性层或钉扎层的一部分以限定化学引导图案。 沉积在化学引导图案上的嵌段共聚物层。 嵌段共聚物层被相分离以限定与化学引导图案对应的纳米图案。

公开(公告)号：US08828871B2

公开(公告)日：2014-09-09

申请号：US13293979

申请日：2011-11-10

Applicant: Junqing Zhou ,  Xiaoying Meng ,  Haiyang Zhang

Inventor： Junqing Zhou ,  Xiaoying Meng ,  Haiyang Zhang

IPC: H01L21/306 ,  B44C1/22 ,  B29C59/02

CPC classification number: H01L21/0332 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/165 ,  H01L21/0337 ,  H01L21/0338

Abstract: A pattern formation method, mask pattern formation method and a method for manufacturing semiconductor devices are provided in this disclosure, which are directed to the field of semiconductor processes. The pattern formation method comprises: providing a substrate; forming a polymer thin film containing a block copolymer on the substrate; forming a first pattern through imprinting the polymer thin film with a stamp; forming domains composed of different copolymer components through directed self assembly of the copolymer in the first pattern; selectively removing the domains composed of copolymer components to form a second pattern. In the embodiments of the present invention, finer pitch patterns can be obtained through combining the imprinting and DSA process without exposure, which as compared to the prior art methods has the advantage of simplicity. Furthermore, stamps used in imprinting may have relative larger pitches, facilitating and simplifying the manufacture and alignment of the stamps.

Abstract translation: 在本公开中提供了图案形成方法，掩模图案形成方法和半导体器件的制造方法，其涉及半导体工艺领域。 图案形成方法包括：提供基板; 在基材上形成含有嵌段共聚物的聚合物薄膜; 通过用印模压印聚合物薄膜来形成第一图案; 通过在第一图案中共聚物的定向自组装形成由不同共聚物组分组成的畴; 选择性地除去由共聚物组分组成的畴以形成第二图案。 在本发明的实施例中，可以通过组合压印和DSA处理而不曝光来获得更细的间距图案，与现有技术的方法相比，其简单性优点。 此外，在印记中使用的邮票可以具有相对更大的间距，便于和简化邮票的制造和对准。

公开(公告)号：US20140245948A1

公开(公告)日：2014-09-04

申请号：US14345891

申请日：2012-10-02

Applicant: ASML Netherlands B.V.

Inventor： Thanh Trung Nguyen ,  Jozef Maria Finders ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Eddy Cornelis Antonius Van Der Heijden ,  Hieronymus Johannus Christiaan Meessen ,  Roelof Koole ,  Emiel Peeters ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Tamara Druzhinina ,  Jessica Marggaretha De Ruiter

IPC: C30B1/12

CPC classification number: C30B1/12 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/0337 ,  Y10T117/10

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

Abstract translation: 用于使自组装嵌段聚合物对准以将其自组装成具有平行于第一轴延伸的不连续第一域的平行排的二维阵列，并且沿着正交的第二轴互相间隔并由连续的第二轴 域。 所述方解石模板具有第一和第二基本上平行的侧壁，所述第一和第二基本平行的侧壁平行于并限定第一轴线并且限定第一轴线并且沿着第二轴线相互间隔延伸，以提供隔室，以将自组装嵌段共聚物的至少一排不连续的第一区域保持在基板上 在侧壁之间并平行于侧壁，并通过连续的第二结构域与之隔开。 隔室具有图案外延成核特征，布置成将隔离物内的特定位置处的不连续的第一结构域中的至少一个定位。 还公开了用于形成图案石墨模板的方法及其用于器件光刻的方法。

公开(公告)号：US20140106575A1

公开(公告)日：2014-04-17

申请号：US13653606

申请日：2012-10-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kenji YOSHIMOTO

IPC: H01L21/02

CPC classification number: H01L21/02354 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/354 ,  B23K2103/16 ,  B23K2103/42 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/02118 ,  H01L21/0271

Abstract: Methods for performing directed self-assembly (DSA) of block copolymer (BCP) material on a substrate are disclosed. The BCP is disposed over a patterned neutral layer made from a random copolymer. The BCP is annealed with a laser to induce the directed self-assembly. The scan type may include single scan, multiple scan, or multiple scan with overlap. A variety of power settings and dwell times may be used within a single wafer to achieve multiple heating conditions within a single wafer.

Abstract translation: 公开了在基片上进行嵌段共聚物（BCP）材料的定向自组装（DSA）的方法。 BCP布置在由无规共聚物制成的图案化中性层上。 BCP用激光退火以诱导定向自组装。 扫描类型可能包括单次扫描，多次扫描或重叠扫描。 可以在单个晶片内使用各种功率设置和停留时间来实现单个晶片内的多个加热条件。

公开(公告)号：US08679423B2

公开(公告)日：2014-03-25

申请号：US12988213

申请日：2009-04-23

Applicant: Yves Fouillet

Inventor： Yves Fouillet

IPC: B03C9/00 ,  B01L3/00

CPC classification number: B82Y30/00 ,  B01L3/502707 ,  B01L3/50273 ,  B01L2200/12 ,  B01L2300/0887 ,  B01L2400/0415 ,  B81B2201/051 ,  B81C1/00071 ,  B81C2201/0149

Abstract: A microfluidic device, including a microfluidic network, including: a) two parallel plates each including one or more electrodes, b) at least one channel, arranged between the two plates, made from a material obtained by solidification or hardening of a material of a first fluid, and c) a mechanism varying a physical parameter of the material constituting walls of the channel so as to cause the material to pass at least from the liquid state to the solid state.

Abstract translation: 包括微流体网络的微流体装置，包括：a）两个平行板，每个平行板包括一个或多个电极，b）布置在两个板之间的至少一个通道，由通过固化或硬化材料获得的材料制成 第一流体，以及c）改变通道的材料构成壁的物理参数以使材料至少从液态通过至固态的机构。

公开(公告)号：US20140054265A1

公开(公告)日：2014-02-27

申请号：US13927464

申请日：2013-06-26

Applicant: Tokyo Ohka Kogyo Co., Ltd. ,  Riken

Inventor： Shigenori Fujikawa ,  Harumi Hayakawa ,  Takahiro Senzaki ,  Ken Miyagi

IPC: B81C1/00

CPC classification number: B81C1/00531 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31133

Abstract: A method of forming a fine pattern, including: a phase separation step in which a layer containing a block copolymer having a plurality of blocks bonded is formed on a substrate, and then the layer is heated for phase separation of the layer; a decomposition step in which at least a portion of a phase of at least one block of the plurality of blocks constituting the block copolymer is decomposed; a selective removal step in which the layer is immersed in a developing solution to selectively remove a phase containing decomposed blocks to form a nano structure; and an etching step in which the substrate is subjected to etching by using the nano structure as a mask; and a main component of the developing solution is an organic solvent having an SP value of 7.5 to 11.5 (cal/cm3)1/2, and having vapor pressure of less than 2.1 kPa at 25° C., or is benzene that may be substituted by an alkyl group, an alkoxy group, or a halogen atom, and the developing solution further contains metal alkoxide.

Abstract translation: 一种形成精细图案的方法，包括：相位分离步骤，其中在基板上形成含有多个键合的嵌段共聚物的层，然后将该层加热以使该层相分离; 分解步骤，其中构成所述嵌段共聚物的多个嵌段的至少一个嵌段的至少一部分相分解; 选择性去除步骤，其中将该层浸入显影溶液中以选择性地除去含有分解嵌段的相以形成纳米结构; 以及通过使用纳米结构作为掩模对基板进行蚀刻的蚀刻步骤; 显影液的主要成分是在25℃下SP值为7.5〜11.5（cal / cm 3）1/2，蒸气压小于2.1kPa的有机溶剂，也可以是苯 被烷基，烷氧基或卤素原子取代，显影液还含有金属醇盐。

公开(公告)号：US08642157B2

公开(公告)日：2014-02-04

申请号：US13312383

申请日：2011-12-06

Applicant: Dan B. Millward ,  Karl Stuen

Inventor： Dan B. Millward ,  Karl Stuen

IPC: B32B5/12

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S977/778 ,  Y10S977/784 ,  Y10S977/789 ,  Y10S977/79 ,  Y10T428/24058 ,  Y10T428/24124 ,  Y10T428/24174 ,  Y10T428/24182

Abstract: Methods for fabricating sub-lithographic, nanoscale microstructures in one-dimensional arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract translation: 提供了利用自组装嵌段共聚物在一维阵列中制备亚光刻，纳米尺度微结构的方法，以及由这些方法形成的膜和器件。

公开(公告)号：US20130318483A1

公开(公告)日：2013-11-28

申请号：US13899936

申请日：2013-05-22

Applicant: Massachusetts Institute of Technology

Inventor： Jae-Byum Chang ,  Hong Kyoon Choi ,  Adam F. Hannon ,  Caroline A. Ross ,  Karl K. Berggren

IPC: G06F17/50

CPC classification number: G06F17/50 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y40/00 ,  G03F7/0002

Abstract: This disclosure relates generally to systems and methods of providing standardized topographical configurations for template regions. In one embodiment, a set of array arrangements is selected. Arrays of template structures are then formed on at least one substrate. Each of the arrays is arranged in accordance with an array arrangement in the set of array arrangements such that the arrays correspond surjectively onto the set of array arrangements. After the arrays are formed, a self-assembly material is provided on the arrays. Self-assembly patterns formed by self-assembling material as a result of the arrays may be empirically observed and used to map a set of self-assembly pattern arrangements surjectively onto the set of array arrangements. Using this mapping, a combination of the self-assembly pattern arrangements that match a target pattern arrangement can be used to select a combination of array arrangements from the set of array arrangements for a template region.

Abstract translation: 本公开一般涉及为模板区域提供标准化的外形配置的系统和方法。 在一个实施例中，选择一组阵列布置。 然后在至少一个基底上形成模板结构的阵列。 每个阵列根据阵列布置集合中的阵列布置被布置，使得阵列突出地对准阵列布置集合。 在形成阵列之后，在阵列上提供自组装材料。 可以凭经验观察自组装材料形成的自组装图案，并将其用于将一组自组装图案布置映射到阵列布置集合上。 使用该映射，可以使用与目标图案布置匹配的自组装图案布置的组合来从模板区域的阵列布置集合中选择阵列布置的组合。

公开(公告)号：US20130299796A1

公开(公告)日：2013-11-14

申请号：US13938597

申请日：2013-07-10

Applicant: TOKYO INSTITUTE OF TECHNOLOGY ,  JX NIPPON OIL & ENERGY CORPORATION

Inventor： Satoshi MASUYAMA ,  Madoka TAKAHASHI ,  Suzushi NISHIMURA ,  Maki FUKUDA ,  Takashi SEKI

IPC: G02B5/18 ,  H01L51/56 ,  H01L51/52 ,  C25D1/10

CPC classification number: G02B5/1852 ,  B29C33/3857 ,  B29C33/424 ,  B29C35/0805 ,  B29C43/021 ,  B29C43/36 ,  B29C2035/0827 ,  B29C2043/023 ,  B29D11/00769 ,  B29K2105/0061 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C25D1/10 ,  G02B5/1809 ,  G02B5/1847 ,  G02B27/4266 ,  G03F7/0002 ,  H01L51/52 ,  H01L51/5275 ,  H01L51/56

Abstract: A method for producing a mold includes: applying a block copolymer solution made of first and second polymers on a base member; performing a first annealing process at a temperature higher than Tg of the block copolymer after drying the coating film; forming a concavity and convexity structure on the base member by removing the second polymer by an etching process; performing a second annealing process of the concavity and convexity structure at a temperature higher than Tg of the first polymer; forming a seed layer on the structure; laminating or stacking a metal layer on the seed layer by an electroforming; and peeling off the metal layer from the base member. The second annealing process enables satisfactory transfer of a concavity and convexity structure on the base member onto the metal layer.

Abstract translation: 制造模具的方法包括：将由第一和第二聚合物制成的嵌段共聚物溶液施加到基材上; 在涂膜干燥后，在高于嵌段共聚物的Tg的温度下进行第一退火处理; 通过蚀刻工艺除去第二聚合物，在基底构件上形成凹凸结构; 在高于第一聚合物的Tg的温度下进行凹凸结构的第二退火处理; 在结构上形成种子层; 通过电铸在种子层上层压或堆叠金属层; 并从基体上剥离金属层。 第二退火处理使得能够将基底构件上的凹凸结构令人满意地转移到金属层上。

公开(公告)号：US08581272B2

公开(公告)日：2013-11-12

申请号：US13461175

申请日：2012-05-01

Applicant: Thomas P. Russell ,  Soojin Park ,  Ting Xu

Inventor： Thomas P. Russell ,  Soojin Park ,  Ting Xu

IPC: H01L21/00

CPC classification number: H01L21/31133 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G11C11/14 ,  H01L29/0657 ,  H01L43/02 ,  H01L43/12 ,  Y10S977/70 ,  Y10S977/757 ,  Y10S977/888 ,  Y10T428/2457 ,  Y10T428/24802 ,  Y10T428/249953 ,  Y10T428/249975

Abstract: A nanopatterned surface is prepared by forming a block copolymer film on a miscut crystalline substrate, annealing the block copolymer film, then reconstructing the surface of the annealed block copolymer film. The method creates a well-ordered array of voids in the block copolymer film that is maintained over a large area. The nanopatterned block copolymer films can be used in a variety of different applications, including the fabrication of high density data storage media.

Abstract translation: 通过在杂交晶体基底上形成嵌段共聚物膜，退火嵌段共聚物膜，然后重构退火的嵌段共聚物膜的表面来制备纳米图案化的表面。 该方法在保持在大面积上的嵌段共聚物膜中产生了排列良好的空隙阵列。 纳米图案嵌段共聚物膜可用于各种不同的应用，包括制造高密度数据存储介质。