Device and Method for Micro-Electro-Mechanical-System Photonic Switch
    162.
    发明申请
    Device and Method for Micro-Electro-Mechanical-System Photonic Switch 审中-公开
    微电子机械系统光电开关的装置和方法

    公开(公告)号:US20170038577A1

    公开(公告)日:2017-02-09

    申请号:US15333930

    申请日:2016-10-25

    Abstract: In one embodiment, a micro-electro-mechanical-system (MEMS) photonic switch includes a first plurality of collimators including a first collimator configured to receive a first traffic optical beam having a traffic wavelength and a first control optical beam having a control wavelength, where a first focal length of the first collimators at the traffic wavelength is different than a second focal length of the first collimators at the control wavelength. The MEMS photonic switch also includes a first mirror array optically coupled to the first plurality of collimators, where the first mirror array including a first plurality of first MEMS mirrors integrated on a first substrate and a first plurality of first photodiodes integrated on the first substrate, where the photodiodes are disposed in interstitial spaces between the MEMS mirrors.

    Abstract translation: 在一个实施例中,微电子机械系统(MEMS)光子开关包括第一多个准直器,其包括被配置为接收具有业务波长的第一业务光束的第一准直仪和具有控制波长的第一控制光束, 其中在交通波长处的第一准直仪的第一焦距不同于处于控制波长的第一准直仪的第二焦距。 MEMS光子开关还包括光耦合到第一多个准直器的第一反射镜阵列,其中第一反射镜阵列包括集成在第一基板上的第一多个第一MEMS反射镜和集成在第一基板上的第一多个第一光电二极管, 其中光电二极管设置在MEMS镜之间的间隙空间中。

    SEMICONDUCTOR DEVICE
    163.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20160313178A1

    公开(公告)日:2016-10-27

    申请号:US15099978

    申请日:2016-04-15

    Inventor: Mutsuya MOTOJIMA

    CPC classification number: G01J1/4228 B60S1/0837 G01J1/0204 G01J2001/446

    Abstract: A semiconductor device includes light receiving elements, selection switches, a light receiving circuit and a control circuit. Each light receiving element receives a light and outputs a detection signal according to an intensity of the light. The selection switches are correspondingly provided for the light receiving elements. Each selection switch selectively allows the detection signal to be outputted. The light receiving circuit includes a capacitive coupling element and an amplifying circuit. The light receiving circuit is provided for a prescribed number of the light receiving elements and connected to the light receiving elements through the selection switches. The control circuit switches the selection switches sequentially so that the detection signals of the light receiving elements are received in the light receiving circuit through the capacitive coupling element. The control circuit controls the light receiving circuit to process the detection signals by amplifying the detection signals by the amplifying circuit.

    Abstract translation: 半导体器件包括光接收元件,选择开关,光接收电路和控制电路。 每个光接收元件接收光并根据光的强度输出检测信号。 相应地,为光接收元件提供选择开关。 每个选择开关选择性地允许输出检测信号。 光接收电路包括电容耦合元件和放大电路。 光接收电路被设置用于规定数量的光接收元件,并通过选择开关连接到光接收元件。 控制电路顺序地切换选择开关,使得光接收元件的检测信号通过电容耦合元件被接收在光接收电路中。 控制电路通过放大电路放大检测信号来控制光接收电路来处理检测信号。

    PHOTOELECTRIC CONVERTER, FOCUS DETECTION APPARATUS, AND OPTICAL APPARATUS WHICH ARE USED FOR AUTOFOCUSING
    164.
    发明申请
    PHOTOELECTRIC CONVERTER, FOCUS DETECTION APPARATUS, AND OPTICAL APPARATUS WHICH ARE USED FOR AUTOFOCUSING 有权
    光电转换器,焦点检测装置和用于自动对焦的光学装置

    公开(公告)号:US20160309073A1

    公开(公告)日:2016-10-20

    申请号:US15093989

    申请日:2016-04-08

    Inventor: Takashi Ichimiya

    CPC classification number: G01J1/44 G01J2001/446 G02B7/28 G02B7/346 H04N5/35509

    Abstract: A photoelectric converter includes a photoelectric conversion portion (PD) which receives light from an object to generate charges, a transfer portion (MTX) which transfers the charges generated by the photoelectric conversion portion, a capacitance portion (Cfd, Cs) which accumulates the charges transferred from the transfer portion, a determination unit (109) which determines whether an accumulation of the charges in the capacitance portion is to be stopped based on a signal corresponding to a charge amount accumulated in the capacitance portion during a first time period, and a setting unit (ST) which sets a height of a potential barrier in the transfer portion (transfer channel region), and the setting unit changes the height of the potential barrier in the transfer portion between the first time period and a second time period different from the first time period.

    Abstract translation: 光电转换器包括从物体接收光以产生电荷的光电转换部分(PD),传输由光电转换部分产生的电荷的转移部分(MTX),积累电荷的电容部分(Cfd,Cs) 从所述传送部分传送的确定单元,确定单元(109),其基于与在第一时间段期间在所述电容部分中累积的电荷量相对应的信号来确定是否要停止所述电容部分中的电荷的累积;以及 设置单元(ST),其设置传送部分(传送通道区域)中的势垒的高度,并且设定单元改变在第一时间段和第二时间段之间的传送部分中的势垒的高度 第一时间段

    Method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors integrated in a CMOS SOI wafer
    166.
    发明授权
    Method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors integrated in a CMOS SOI wafer 有权
    利用集成在CMOS SOI晶片中的波导异质结光电晶体管的光电接收器的方法和系统

    公开(公告)号:US09425342B2

    公开(公告)日:2016-08-23

    申请号:US14091259

    申请日:2013-11-26

    Applicant: Luxtera, Inc

    Abstract: A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a CMOS SOI wafer are disclosed and may include receiving optical signals via a top surface of a photonically-enabled CMOS chip; and generating electrical signals in the chip utilizing one or more HPTs that detect optical signals. The HPTs may comprise a base and a split collector, with the split collector comprising a silicon-on-insulator (SOI) layer and a germanium layer. The thickness of the germanium layer may be such that carriers in the base do not interact with defects from an interface between the SOI layer and the germanium layer. The electrical signals may be amplified by amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. An electrode formed longitudinally in the direction of light travel through the HPTs may bias the base of the HPTs.

    Abstract translation: 公开了一种利用集成在CMOS SOI晶片中的波导异质结光电晶体管(HPT)的光电子接收器的方法和系统,其可以包括通过光子启用的CMOS芯片的顶表面接收光信号; 以及利用检测光信号的一个或多个HPT在芯片中产生电信号。 HPT可以包括基极和分离集电极,分离集电极包括绝缘体上硅(SOI)层和锗层。 锗层的厚度可以使得基底中的载流子不与来自SOI层和锗层之间的界面的缺陷相互作用。 电信号可以由放大器放大,其输出可以用于通过反馈网络偏置HPT。 沿光线方向纵向形成的电极穿过HPT可偏置HPT的底座。

    Light-receiving device, light receiver using same, and method of fabricating light-receiving device
    167.
    发明授权
    Light-receiving device, light receiver using same, and method of fabricating light-receiving device 有权
    光接收装置,使用其的光接收器以及制造光接收装置的方法

    公开(公告)号:US09243952B2

    公开(公告)日:2016-01-26

    申请号:US14259488

    申请日:2014-04-23

    Inventor: Tetsuya Miyatake

    Abstract: An apparatus includes a flip-chip semiconductor substrate, a light detection element configured to be formed over the flip-chip semiconductor substrate and to have a laminate structure including a first semiconductor layer of a first-conductive-type, a light-absorption layer formed over the first semiconductor layer, and a second semiconductor layer of a second-conductive-type formed over the light-absorption layer, an inductor configured to be connected to the light detection element over the flip-chip semiconductor substrate, an output electrode for bump connection configured to output a current generated by the light detection element through the inductor, a bias electrode for bump connection configured to apply a bias voltage to the light detection element through a bias electrode, and a line configured to cause a metal line of the inductor and the light detection element to be connected to the output electrode or the bias electrode.

    Abstract translation: 一种装置包括倒装芯片半导体衬底,配置成形成在倒装芯片半导体衬底上的光检测元件,并且具有包括第一导电类型的第一半导体层,形成的光吸收层的层叠结构 在第一半导体层上形成第二半导体层,以及在该光吸收层上形成的第二导电类型的第二半导体层,被配置为在该倒装芯片半导体衬底上连接到该光检测元件的电感器,一凸起输出电极 连接,被配置为输出由光检测元件通过电感器产生的电流,用于突起连接的偏置电极,被配置为通过偏置电极向光检测元件施加偏置电压;以及线,其被配置为使得电感器的金属线 以及要连接到输出电极或偏置电极的光检测元件。

    LIGHT-DETECTING DEVICE AND METHOD FOR CONVERTING OPTICAL RADIATION ON SWITCHED CONDUCTIVITY DIODES
    169.
    发明申请
    LIGHT-DETECTING DEVICE AND METHOD FOR CONVERTING OPTICAL RADIATION ON SWITCHED CONDUCTIVITY DIODES 有权
    用于转换开关电导二极管的光学辐射的光检测装置和方法

    公开(公告)号:US20150323382A1

    公开(公告)日:2015-11-12

    申请号:US14272661

    申请日:2014-05-08

    Abstract: A light-detecting device and method for converting optical radiation on switched conductivity diodes. The device comprises one or more photosensitive cells connected to address and signal lines, each cell comprising the following elements connected in series: a photodetector, an initial charge input circuit, a charge converter for converting the charge generated by the photodetector signal in addition to the initial charge into photodetector output voltage, a comparator which converts the difference between the photodetector output voltage and reference voltage into a digital cell signal, a reading circuit for reading the digital cell signal through the address lines and the signal lines, a circuit for generating digital codes of the cell signal, a random access memory for storing the digital codes, a reading circuit for reading the digital codes of the cell signals on one or more outputs of the light-detecting device.

    Abstract translation: 一种用于转换开关导电二极管上的光辐射的光检测装置和方法。 该装置包括连接到地址和信号线的一个或多个感光单元,每个单元包括串联连接的以下元件:光电检测器,初始充电输入电路,用于将由光检测器信号产生的电荷转换成除了 将光电检测器输出电压的初始电荷转换为光电检测器输出电压的比较器,将光电检测器输出电压和参考电压之间的差转换为数字单元信号的比较器,用于通过地址线和信号线读取数字单元信号的读取电路, 单元信号的代码,用于存储数字代码的随机存取存储器,用于在光检测装置的一个或多个输出上读取单元信号的数字代码的读取电路。

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