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    MICROELECTROMECHANICAL COMPONENT AND METHOD FOR TESTING A MICROELECTROMECHANICAL COMPONENT
    181.
    发明申请
    MICROELECTROMECHANICAL COMPONENT AND METHOD FOR TESTING A MICROELECTROMECHANICAL COMPONENT 有权
    微电子元件和微电子元件测试方法

    公开(公告)号：US20130305804A1

    公开(公告)日：2013-11-21

    申请号：US13981506

    申请日：2012-01-27

    Applicant: Bernd Burchard ,  Michael Doelle

    Inventor： Bernd Burchard ,  Michael Doelle

    IPC: B81B3/00 ,  G01L25/00

    CPC classification number: B81B3/0018 ,  B81B2201/0264 ,  B81C99/0045 ,  G01L25/00 ,  G01L27/007

    Abstract: The microelectromechanical component has a semiconductor substrate (1), which has a cavity (2a) formed in the semiconductor substrate. The cavity is covered by a reversibly deformable membrane (2). A sensor (17) for detecting a deformation of the membrane (2) is formed within the region of the membrane (2). A test actuator (28, 29, 30) for deforming the membrane (2) for testing purposes is also arranged within the region of the membrane (2). Finally, the microelectromechanical component has an evaluation and activation unit (41) connected to the sensor (17) and the test actuator (28, 29, 30) for activating the test actuator (28, 29, 30) in order to deform the membrane (2) as a test and for evaluating a measurement signal of the sensor (17) as a sensor detection of a deformation of the membrane (2) as a result of the activation of the test actuator (28, 29, 30).

    Abstract translation: 微电子部件具有半导体基板（1），该半导体基板具有在半导体基板中形成的空腔（2a）。 空腔被可逆变形的膜（2）覆盖。 用于检测膜（2）的变形的传感器（17）形成在膜（2）的区域内。 用于使膜（2）变形以用于测试目的的测试致动器（28,29,30）也布置在膜（2）的区域内。 最后，微电子部件具有连接到传感器（17）的评估和激活单元（41）和用于启动测试致动器（28,29,30）的测试致动器（28,29,30），以使膜变形 （2）作为测试，并且用于作为由于测试致动器（28,29,30）的激活而导致的膜（2）的变形的传感器检测来评估传感器（17）的测量信号。

    MICROELECTROMECHANICAL PRESSURE SENSOR INCLUDING REFERENCE CAPACITOR
    183.
    发明申请
    MICROELECTROMECHANICAL PRESSURE SENSOR INCLUDING REFERENCE CAPACITOR 审中-公开
    微电子式压力传感器，包括参考电容

    公开(公告)号：US20130277772A1

    公开(公告)日：2013-10-24

    申请号：US13821598

    申请日：2011-09-20

    Applicant: Janusz Bryzek

    Inventor： Janusz Bryzek

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0021 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2207/012 ,  B81C1/00015 ,  B81C1/00158 ,  G01L9/0016 ,  G01L9/0042 ,  G01L9/0073 ,  G01L19/04

    Abstract: This document discusses, among other things, an apparatus including a silicon die including a vibratory diaphragm, the die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port, a capacitor electrode disposed along a bottom of the silicon die, across the bottom silicon die port, the capacitor electrode including a first signal generation portion that is coextensive with the top silicon die port, and a second signal generation portion surrounding the first portion.

    Abstract translation: 本文件尤其涉及一种包括具有振动膜片的硅片的装置，该芯片具有与硅晶片底部相对的硅晶片顶部，其具有从硅晶片顶部通过硅晶片延伸到硅晶片的顶部硅晶片端口 并且具有从硅模底部延伸到振动膜片的底部的底部硅模头端口，其中底部硅模具端口的横截面面积大于顶部的横截面面积 硅晶片端口，沿着硅晶片的底部设置的电容器电极，跨越底部硅晶片端口，电容器电极包括与顶部硅晶片端口共同延伸的第一信号产生部分，以及围绕 第一部分。

    Micromechanical component and corresponding production method
    184.
    发明授权
    Micromechanical component and corresponding production method 有权
    微机械部件及相应的生产方式

    公开(公告)号：US08558327B2

    公开(公告)日：2013-10-15

    申请号：US12451033

    申请日：2008-02-29

    Applicant: Kathrin Knese ,  Heribert Weber ,  Simon Armbruster

    Inventor： Kathrin Knese ,  Heribert Weber ,  Simon Armbruster

    IPC: H01L29/84

    CPC classification number: B81B3/0086 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  G01L9/0042 ,  G01L9/0073

    Abstract: A micromechanical component having a conductive substrate, a first conductive layer provided above the substrate and that forms, above a cavity provided in the substrate, an elastically deflectable diaphragm region of monocrystalline silicon and an adjacent peripheral region, a circuit trace level provided above the first conductive layer in a manner that is electrically insulated from the first conductive layer, the circuit trace level having above the diaphragm region a first electrode region and having above the peripheral region a first connection region electrically connected to the same, and a second conductive layer that is provided above the circuit trace level, the second conductive layer having above the diaphragm region a second electrode region that is electrically insulated from the first electrode region, and having above the peripheral region a second connection region electrically insulated from the second electrode region and electrically connected to the first connection region. Also provided is a suitable production method.

    Abstract translation: 一种具有导电衬底的微机械部件，设置在衬底上方并在衬底中设置的空腔之上形成的第一导电层，单晶硅和相邻外围区域的可弹性偏转的膜片区域，设置在第一 导电层，其与第一导电层电绝缘的方式，电路迹线电平在隔膜区域上方具有第一电极区域，并且在周边区域上方具有与其电连接的第一连接区域;以及第二导电层， 设置在所述电路迹线电平之上，所述第二导电层在所述光阑区域上方具有与所述第一电极区域电绝缘的第二电极区域，并且在所述外围区域上方具有与所述第二电极区域电绝缘的第二连接区域， 连接到第一个连接 离子区。 还提供了合适的生产方法。

    MEMS process and device
    185.
    发明授权
    MEMS process and device 有权
    MEMS工艺和器件

    公开(公告)号：US08546170B2

    公开(公告)日：2013-10-01

    申请号：US12673925

    申请日：2008-08-15

    Applicant: Anthony Bernard Traynor ,  Richard Ian Laming ,  Tsjerk Hans Hoekstra

    Inventor： Anthony Bernard Traynor ,  Richard Ian Laming ,  Tsjerk Hans Hoekstra

    IPC: H01L21/00

    CPC classification number: H04R19/04 ,  B81B3/0021 ,  B81B3/0072 ,  B81B3/0094 ,  B81B2201/00 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  H01L27/00 ,  H04R19/00 ,  H04R19/005 ,  H04R23/00 ,  H04R31/00 ,  H04R2499/11

    Abstract: A method of fabricating a micro-electrical-mechanical system (MEMS) transducer comprises the steps of forming a membrane (5) on a substrate (3), and forming a back-volume in the substrate. The step of forming a back-volume in the substrate comprises the steps of forming a first back-volume portion (7a) and a second back-volume portion (7b), the first back-volume portion (7a) being separated from the second back-volume portion (7b) by a step in a sidewall of the back-volume. The cross-sectional area of the second back-volume portion (7b) can be made greater than the cross-sectional area of the membrane (5), thereby enabling the back-volume to be increased without being constrained by the cross-sectional area of the membrane (5). The back-volume may comprise a third back-volume portion. The third back-volume portion enables the effective diameter of the membrane to be formed more accurately.

    Abstract translation: 制造微机电系统（MEMS）换能器的方法包括以下步骤：在衬底（3）上形成膜（5），并在衬底中形成后体积。 在衬底中形成背部体积的步骤包括形成第一后部容积部分（7a）和第二后部体积部分（7b）的步骤，第一后部体积部分（7a）与第二后部体积部分 后体积部分（7b）通过后体积的侧壁中的台阶。 第二后部容积部分（7b）的横截面面积可以大于膜（5）的横截面面积，从而能够增加后部体积而不受横截面积的约束 的膜（5）。 背部容积可以包括第三后部体积部分。 第三后部体积部分能够更准确地形成膜的有效直径。

    Sensor element for capacitively measuring differential pressure
    187.
    发明授权
    Sensor element for capacitively measuring differential pressure 有权
    用于电容式测量压差的传感器元件

    公开(公告)号：US08511168B2

    公开(公告)日：2013-08-20

    申请号：US13191118

    申请日：2011-07-26

    Applicant: Sven Zinober ,  Remigius Has

    Inventor： Sven Zinober ,  Remigius Has

    IPC: G01L9/12 ,  G01L9/00

    CPC classification number: G01L9/0073 ,  B81B7/0025 ,  B81B2201/0264 ,  B81B2203/0127 ,  G01L19/0627

    Abstract: A capacitive differential pressure sensor is described which has a simple configuration, and which provides reliable measuring results even in corrosive measuring environments. The sensor element for capacitively measuring differential pressure includes a sensor diaphragm which is implemented in a layered configuration on a semiconductor substrate and spans a cavern. A pressure connection opens into the cavern. The sensor element also includes a measuring capacitor which has a movable electrode on the sensor diaphragm, and a stationary counter electrode which is situated on the base of the cavern, opposite from the movable electrode. According to the sensor, the cavern is filled with a dielectric fluid.

    Abstract translation: 描述了一种具有简单结构的电容差压传感器，即使在腐蚀性测量环境中也能提供可靠的测量结果。 用于电容式测量差压的传感器元件包括传感器隔膜，该传感器隔膜以半导体衬底上的分层结构实现并跨越洞穴。 压力连接通向洞穴。 传感器元件还包括测量电容器，该测量电容器在传感器隔膜上具有可移动电极，以及固定对置电极，其位于与可动电极相对的洞穴底部。 根据传感器，洞穴填充有介电流体。

    CAPACITIVE PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME
    189.
    发明申请
    CAPACITIVE PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
    电容式压力传感器及其制造方法

    公开(公告)号：US20130193534A1

    公开(公告)日：2013-08-01

    申请号：US13757701

    申请日：2013-02-01

    Applicant: ROHM CO., LTD.

    Inventor： Goro NAKATANI

    IPC: G01L1/14 ,  H01L21/311

    CPC classification number: G01L1/148 ,  B81B2201/0264 ,  B81C1/00047 ,  G01L9/0045 ,  G01L9/0073 ,  H01L21/311

    Abstract: A capacitive pressure sensor includes: a semiconductor substrate having a reference pressure chamber formed therein; a diaphragm which is formed in a front surface of the semiconductor substrate and has a ring-like peripheral through hole penetrating between the front surface of the semiconductor substrate and the reference pressure chamber and defining an upper electrode and a plurality of central through holes; a peripheral insulating layer which fills the peripheral through hole and electrically isolates the upper electrode from other portions of the semiconductor substrate; and a central insulating layer which fills the central through holes.

    Abstract translation: 电容式压力传感器包括：在其中形成有基准压力室的半导体衬底; 隔膜，其形成在所述半导体衬底的前表面中，并且具有穿过所述半导体衬底的前表面和所述参考压力室之间并且限定上电极和多个中心通孔的环状周边通孔; 外周绝缘层，其填充周边通孔并将上电极与半导体衬底的其它部分电隔离; 以及填充中心通孔的中心绝缘层。

    COMPONENT HAVING A THROUGH-CONNECTION
    190.
    发明申请
    COMPONENT HAVING A THROUGH-CONNECTION 有权
    具有通过连接的组件

    公开(公告)号：US20130189483A1

    公开(公告)日：2013-07-25

    申请号：US13744611

    申请日：2013-01-18

    Applicant: Jochen REINMUTH ,  Yvonne BERGMANN

    Inventor： Jochen REINMUTH ,  Yvonne BERGMANN

    IPC: H05K13/00

    CPC classification number: H05K13/00 ,  B81B2201/0264 ,  B81B2207/095 ,  B81C1/00301 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H05K3/002 ,  H05K3/4076 ,  H05K3/421 ,  H05K2201/068 ,  Y10T29/49165 ,  Y10T428/24322 ,  H01L2924/00

    Abstract: A method is described for manufacturing a component having a through-connection. The method includes providing a substrate; forming a trench structure in the substrate, a substrate area which is completely surrounded by the trench structure being produced; forming a closing layer for closing off the trench structure, a cavity girded by the closing layer being formed in the area of the trench structure; removing substrate material from the substrate area surrounded by the closed-off trench structure; and at least partially filling the substrate area surrounded by the closed-off trench structure with a metallic material. A component having a through-connection is also described.

    Abstract translation: 描述了用于制造具有贯通连接的部件的方法。 该方法包括提供基板; 在衬底中形成沟槽结构，被正被制造的沟槽结构完全包围的衬底区域; 形成用于封闭所述沟槽结构的封闭层，由所述封闭层围绕的腔体形成在所述沟槽结构的区域中; 从由封闭沟槽结构包围的衬底区域中去除衬底材料; 并且用金属材料至少部分地填充由封闭沟槽结构包围的衬底区域。 还描述了具有贯通连接的部件。

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