公开(公告)号：US09645032B2

公开(公告)日：2017-05-09

申请号：US14655831

申请日：2013-12-26

Applicant: The University of Tokyo

Inventor： Isao Shimoyama ,  Kiyoshi Matsumoto ,  Binh-Khiem Nguyen ,  Minh-Dung Nguyen ,  Hoang-Phuong Phan

IPC: G01L9/00 ,  G01L19/04 ,  H04R1/44 ,  H04R7/20 ,  H04R17/00 ,  B81B3/00 ,  G01L19/00 ,  H04R1/42 ,  G01V1/18 ,  H04R1/38

CPC classification number: G01L19/04 ,  B81B3/0027 ,  B81B2203/0118 ,  G01L1/18 ,  G01L9/0001 ,  G01L9/065 ,  G01L19/0046 ,  G01V1/186 ,  H04R1/38 ,  H04R1/42 ,  H04R1/44 ,  H04R7/20 ,  H04R17/00 ,  H04R2201/003 ,  H04R2217/01

Abstract: The present invention achieves a pressure-sensitive sensor which can detect information on a pressure, a sound pressure, acceleration, gas and the like, with high sensitivity. The pressure-sensitive sensor includes: a cantilever (22); a frame (23) which is provided around the cantilever (22) and holds a base end of the cantilever (22); a gap (24) formed between the cantilever (22) and the frame (23); and a liquid (28) which seals the gap (24).

公开(公告)号：US09641137B2

公开(公告)日：2017-05-02

申请号：US14904037

申请日：2014-06-27

Applicant: ams AG

Inventor： Wolfgang Duenser ,  Markus Bingesser ,  Thomas Froehlich

IPC: H03F99/00 ,  H03F3/183 ,  H03F1/30 ,  H03F3/181 ,  H03F3/45 ,  H04R1/04 ,  H04R29/00

CPC classification number: H03F3/183 ,  H03F1/30 ,  H03F3/181 ,  H03F3/45076 ,  H03F3/45475 ,  H03F2200/03 ,  H03F2203/45116 ,  H03F2203/45136 ,  H03F2203/45511 ,  H03F2203/45512 ,  H03F2203/45514 ,  H03F2203/45521 ,  H03F2203/45522 ,  H03F2203/45528 ,  H03F2203/45534 ,  H04R1/04 ,  H04R2201/003

Abstract: An electric amplifier circuit for amplifying an output signal of a microphone comprises a supply input terminal (V10) to apply a supply potential (VDDA) for operating the electric amplifier circuit and a differential amplifier (110) having a first input terminal (E110a) for applying the output signal of the microphone (20), a second input terminal (E110b) and an output terminal (A110) for outputting an amplified output signal (OUT) of the microphone (20). A feedback path (FP) is provided between the output terminal (A110) of the differential amplifier (110) and the second input terminal (E110b) of the differential amplifier (110). A charge supplying circuit (120) is coupled to the feedback path (FP) to supply an amount of the charge to the feedback path (FP) in dependence on the supply potential (VDDA). The amount of charge supplied to the feedback path may be dependent on a change of the supply potential (VDDA).

公开(公告)号：US09637374B2

公开(公告)日：2017-05-02

申请号：US15290361

申请日：2016-10-11

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Colin Robert Jenkins ,  Tsjerk Hans Hoekstra ,  Euan James Boyd

IPC: H01L21/00 ,  B81B3/00 ,  B81C1/00 ,  H04R19/00 ,  H04R23/00 ,  H01L41/09

CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B3/0075 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00158 ,  H01L41/09 ,  H01L41/0926 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2924/1461 ,  H01L2924/16151 ,  H01L2924/16152 ,  H04R1/222 ,  H04R23/006 ,  H04R2201/003 ,  Y10T29/49005 ,  H01L2924/00014

Abstract: A MEMS capacitive transducer with increased robustness and resilience to acoustic shock. The transducer structure includes a flexible membrane supported between a first volume and a second volume, and at least one variable vent structure in communication with at least one of the first and second volumes. The variable vent structure includes at least one moveable portion which is moveable in response to a pressure differential across the moveable portion so as to vary the size of a flow path through the vent structure. The variable vent may be formed through the membrane and the moveable portion may be a part of the membrane, defined by one or more channels, that is deflectable away from the surface of the membrane. The variable vent is preferably closed in the normal range of pressure differentials but opens at high pressure differentials to provide more rapid equalization of the air volumes above and below the membrane.

公开(公告)号：US09634153B2

公开(公告)日：2017-04-25

申请号：US14399279

申请日：2013-04-30

Applicant: POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Won Kyu Moon ,  James Edward West ,  Min Sung ,  Yub Je ,  Kum Jae Shin

IPC: H01L29/84 ,  B81B3/00 ,  G01P15/08 ,  G01L9/00 ,  H04R23/00 ,  H01L41/04 ,  H01L41/113

CPC classification number: H01L29/84 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2201/0264 ,  G01L9/0072 ,  G01L9/008 ,  G01P15/08 ,  H01L41/04 ,  H01L41/1132 ,  H04R23/006 ,  H04R2201/003

Abstract: The present invention relates to a sensor that uses a sensing mechanism having a combined static charge and a field effect transistor, the sensor including: a substrate; source and drain units formed on the substrate and separated from each other; a channel unit interposed between the source and drain units; a membrane separated from the channel unit, disposed on a top portion and displaced in response to an external signal; and a static charge member formed on a bottom surface of the membrane separately from the channel unit and generating an electric field. Accordingly, since the sensor using a sensing mechanism having a combined static charge and a field effect transistor according to an embodiment of the present invention can measure the displacement or movement of the sensor by measuring a change of the electric field of the channel unit of the field effect transistor by using a static member, the electric field can be formed so as to be proportional to an amount of charge and inversely proportional to a squared distance regardless of the intensity and distribution of an external electric field. Therefore, sensitivity is improved without being affected by an external electric field.

公开(公告)号：US20170111731A1

公开(公告)日：2017-04-20

申请号：US15280261

申请日：2016-09-29

Applicant: Sonion Nederland B.V.

Inventor： Egon Merks-Swolfs

IPC: H04R1/28 ,  H04R19/04

CPC classification number: H04R1/2807 ,  H04R1/2838 ,  H04R1/2869 ,  H04R19/04 ,  H04R25/48 ,  H04R2201/003

Abstract: The present invention relates to a microphone assembly comprising a microphone unit for converting incoming acoustical sound to an electrical signal, and a rear volume comprising acoustically connected rear volume compartments, said acoustically connected rear volume compartments setting an effective acoustical impedance of said rear volume in order to reduce the sensitivity of the microphone assembly with respect to a resonance peak. The present invention further relates to a hearing device comprising a microphone assembly.

公开(公告)号：US09604842B2

公开(公告)日：2017-03-28

申请号：US14675230

申请日：2015-03-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alberto Cattani ,  Alessandro Gasparini ,  Federico Guanziroli ,  Pierangelo Confalonieri

IPC: B81B7/04 ,  B81B7/00 ,  B81B3/00

CPC classification number: B81B7/008 ,  B81B3/00 ,  B81B7/04 ,  B81B2201/0257 ,  B81B2207/03 ,  B81B2207/053 ,  H04R3/007 ,  H04R3/12 ,  H04R19/005 ,  H04R2201/003

Abstract: A system for driving a MEMS array having a number of MEMS structures, each defining at least one row terminal and one column terminal, envisages: a number of row driving stages, each for supplying row-biasing signals to the row terminal of each MEMS structure associated to a respective row; a number of column driving stages, each for supplying column-biasing signals to the column terminal of each MEMS structure associated to a respective column; and a control unit, for supplying row-address signals to the row driving stages for generation of the row-biasing signals and for supplying column-address signals to the column driving stages for generation of the column-biasing signals. The control unit further supplies row-deactivation and/or column-deactivation signals to one or more of the row and column driving stages, for causing deactivation of one or more rows and/or columns of the MEMS array.

公开(公告)号：US09602920B2

公开(公告)日：2017-03-21

申请号：US14600026

申请日：2015-01-20

Applicant: DSP Group LTD.

Inventor： Moshe Haiut

IPC: H03F99/00 ,  H04R3/00 ,  H04R1/04

CPC classification number: H04R3/00 ,  H04R1/04 ,  H04R2201/003

Abstract: A scheme is described to switch the power supply to the MEMS microphone on and off in a cyclic manner that is synchronized with the associated ADC sampling rate. In this way the MEMS microphone amplifier, whether it is a J-FET transistor or an operational amplifier, is off most of the cycle time, and is turned on only for a few micro-seconds prior to the sample-and-hold timing of the ADC device. By this method, the average power consumption of an existing analog MEMS microphone can be reduced by a factor of 10 or more.

公开(公告)号：US20170078802A1

公开(公告)日：2017-03-16

申请号：US15121831

申请日：2014-03-03

Applicant: Epcos AG

Inventor： Jan Tue Ravnkilde ,  Dennis Mortensen ,  Morten Ginnerup

IPC: H04R19/04 ,  H04R7/16 ,  B81B3/00 ,  H04R9/08

CPC classification number: H04R19/04 ,  B06B1/0292 ,  B81B3/0072 ,  B81B2201/0257 ,  B81B2203/0127 ,  H04R7/16 ,  H04R19/005 ,  H04R2201/003

Abstract: A non-uniform stress distribution of a MEMS microphone having a non-circular shape is compensated by a structured back plate that has a compensating structure to provide a stress distribution opposite to that of the membrane.

Abstract translation: 具有非圆形形状的MEMS麦克风的不均匀应力分布由具有补偿结构的结构化背板补偿，以提供与膜的应力分布相反的应力分布。

公开(公告)号：US20170067791A1

公开(公告)日：2017-03-09

申请号：US15248412

申请日：2016-08-26

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiko FUJI ,  Michiko HARA ,  Kei MASUNISHI ,  Yoshihiro HIGASHI ,  Shiori KAJI ,  Akiko YUZAWA ,  Akio HORI ,  Tomohiko NAGATA ,  Kazuaki OKAMOTO ,  Kenji OTSU ,  Shotaro BABA

IPC: G01L9/00 ,  A61B5/021 ,  A61B5/00 ,  H04R1/46

CPC classification number: G01L9/0091 ,  A61B5/021 ,  A61B5/6898 ,  A61B2562/0247 ,  A61B2562/12 ,  H04R1/46 ,  H04R15/00 ,  H04R2201/003 ,  H04R2499/11

Abstract: According to one embodiment, a sensor includes a deformable film portion, a first sensing element and a second sensing element. The first sensing element is fixed to the film portion, and includes a first magnetic layer of a first material, a first opposing magnetic layer, and a first intermediate layer. The first intermediate layer is provided between the first magnetic layer and the first opposing magnetic layer. The second sensing element is fixed to the film portion, and includes a second magnetic layer of a second material, a second opposing magnetic layer, and a second intermediate layer. The second material is different from the first material. The second intermediate layer is provided between the second magnetic layer and the second opposing magnetic layer.

Abstract translation: 根据一个实施例，传感器包括可变形膜部分，第一感测元件和第二感测元件。 第一感测元件被固定到膜部分，并且包括第一材料的第一磁性层，第一相对磁性层和第一中间层。 第一中间层设置在第一磁性层和第一相对的磁性层之间。 第二传感元件固定在胶片部分上，并包括第二材料的第二磁性层，第二相对磁性层和第二中间层。 第二种材料与第一种材料不同。 第二中间层设置在第二磁性层和第二相对磁性层之间。

公开(公告)号：US20170067787A1

公开(公告)日：2017-03-09

申请号：US15254377

申请日：2016-09-01

Applicant: Kabushiki Kaisha Toshiba

Inventor： Kei MASUNISHI ,  Akiko YUZAWA ,  Yoshihiko FUJI ,  Michiko HARA ,  Yoshihiro HIGASHI ,  Kazuaki OKAMOTO ,  Kenji OTSU

IPC: G01L1/22 ,  A61B8/00 ,  A61B5/021

CPC classification number: A61B8/44 ,  A61B5/02141 ,  A61B2562/0247 ,  G01L9/0042 ,  G01L9/0054 ,  G06F3/0414 ,  H04R15/00 ,  H04R2201/003 ,  H04R2410/00

Abstract: A pressure sensor of an embodiment includes a support portion, a transformable membrane part and a sensor portion. The membrane part includes an end portion supported by the support portion, and a first area and a second area. The first area is positioned between a center of the membrane part and the end portion and has a first rigidity. The second area is positioned between the first area and the end portion, and has a second rigidity lower than the first rigidity. The sensor portion is provided at the first area and includes a first magnetic layer, a second magnetic layer and a first intermediate layer provided between the first magnetic layer and the second magnetic layer. An end-side distance between the first area and the end portion is shorter than a center-side distance between the second area and the center of the membrane part.

Abstract translation: 实施例的压力传感器包括支撑部分，可变形膜部分和传感器部分。 膜部包括由支撑部支撑的端部，以及第一区域和第二区域。 第一区域位于膜部分的中心和端部之间并且具有第一刚性。 第二区域位于第一区域和端部之间，并且具有比第一刚性低的第二刚性。 传感器部分设置在第一区域处，并且包括第一磁性层，第二磁性层和设置在第一磁性层和第二磁性层之间的第一中间层。 第一区域和端部之间的端侧距离比第二区域和膜部分的中心之间的中心侧距离短。