公开(公告)号：US20150115331A1

公开(公告)日：2015-04-30

申请号：US14399279

申请日：2013-04-30

Applicant: POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Won Kyu Moon ,  James Edward West ,  Min Sung ,  Yub Je ,  Kum Jae Shin

IPC: H01L29/84 ,  H01L41/04 ,  H01L41/113

CPC classification number: H01L29/84 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2201/0264 ,  G01L9/0072 ,  G01L9/008 ,  G01P15/08 ,  H01L41/04 ,  H01L41/1132 ,  H04R23/006 ,  H04R2201/003

Abstract: The present invention relates to a sensor that uses a sensing mechanism having a combined static charge and a field effect transistor, the sensor including: a substrate; source and drain units formed on the substrate and separated from each other; a channel unit interposed between the source and drain units; a membrane separated from the channel unit, disposed on a top portion and displaced in response to an external signal; and a static charge member formed on a bottom surface of the membrane separately from the channel unit and generating an electric field. Accordingly, since the sensor using a sensing mechanism having a combined static charge and a field effect transistor according to an embodiment of the present invention can measure the displacement or movement of the sensor by measuring a change of the electric field of the channel unit of the field effect transistor by using a static member, the electric field can be formed so as to be proportional to an amount of charge and inversely proportional to a squared distance regardless of the intensity and distribution of an external electric field. Therefore, sensitivity is improved without being affected by an external electric field.

Abstract translation: 本发明涉及使用具有组合静电荷的感测机构和场效应晶体管的传感器，该传感器包括：基板; 源极和漏极单元形成在基板上并彼此分离; 插入在源极和漏极单元之间的通道单元; 与通道单元分离的膜，设置在顶部并响应于外部信号而移位; 以及与所述通道单元分开地形成在所述膜的底表面上并产生电场的静电荷构件。 因此，由于使用具有组合静电荷的感测机构的传感器和根据本发明的实施例的场效应晶体管的传感器可以通过测量传感器的通道单元的电场的变化来测量传感器的位移或移动 场效应晶体管，通过使用静态元件，电场可以形成为与电荷量成比例，并且与外部电场的强度和分布无关，与平方距离成反比。 因此，不受外部电场的影响而提高灵敏度。

公开(公告)号：US09634153B2

公开(公告)日：2017-04-25

申请号：US14399279

申请日：2013-04-30

Applicant: POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Won Kyu Moon ,  James Edward West ,  Min Sung ,  Yub Je ,  Kum Jae Shin

IPC: H01L29/84 ,  B81B3/00 ,  G01P15/08 ,  G01L9/00 ,  H04R23/00 ,  H01L41/04 ,  H01L41/113

CPC classification number: H01L29/84 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2201/0264 ,  G01L9/0072 ,  G01L9/008 ,  G01P15/08 ,  H01L41/04 ,  H01L41/1132 ,  H04R23/006 ,  H04R2201/003

Abstract: The present invention relates to a sensor that uses a sensing mechanism having a combined static charge and a field effect transistor, the sensor including: a substrate; source and drain units formed on the substrate and separated from each other; a channel unit interposed between the source and drain units; a membrane separated from the channel unit, disposed on a top portion and displaced in response to an external signal; and a static charge member formed on a bottom surface of the membrane separately from the channel unit and generating an electric field. Accordingly, since the sensor using a sensing mechanism having a combined static charge and a field effect transistor according to an embodiment of the present invention can measure the displacement or movement of the sensor by measuring a change of the electric field of the channel unit of the field effect transistor by using a static member, the electric field can be formed so as to be proportional to an amount of charge and inversely proportional to a squared distance regardless of the intensity and distribution of an external electric field. Therefore, sensitivity is improved without being affected by an external electric field.