-
公开(公告)号：US12292780B2
公开(公告)日：2025-05-06
申请号：US18338950
申请日：2023-06-21
Inventor： Nitin Chawla , Anuj Grover , Giuseppe Desoli , Kedar Janardan Dhori , Thomas Boesch , Promod Kumar
IPC: G06F1/3287 , G05F3/24 , G06F1/3234 , G06F15/78 , G11C11/413
Abstract: Systems and devices are provided to enable granular control over a retention or active state of each of a plurality of memory circuits, such as a plurality of memory cell arrays, within a memory. Each respective memory array of the plurality of memory arrays is coupled to a respective ballast driver and a respective active memory signal switch for the respective memory array. One or more voltage regulators are coupled to a ballast driver gate node and to a bias node of at least one of the respective memory arrays. In operation, the respective active memory signal switch for a respective memory array causes the respective memory array to transition between an active state for the respective memory array and a retention state for the respective memory array.
-
公开(公告)号：US20250142865A1
公开(公告)日：2025-05-01
申请号：US18494401
申请日：2023-10-25
Applicant: STMicroelectronics International N.V.
Inventor： Aurore CONSTANT , Tariq WAKRIM , Ferdinando IUCOLANO
IPC: H01L29/778 , H01L21/265 , H01L21/266 , H01L29/20 , H01L29/40 , H01L29/423 , H01L29/66
Abstract: A process for forming a high electron mobility transistor (HEMT) includes forming a semiconductor heterostructure including a channel layer of the HEMT, forming a gate layer of GaN on the channel layer, and patterning the gate layer to form a first gate finger, a second gate finger, and a gate arc connecting the first gate finger and the second gate finger. The process includes forming an isolation mask covering an active region of the semiconductor heterostructure and the gate arc and performing an ion bombardment process on an inactive region of the semiconductor heterostructure exposed by the isolation mask.
-
公开(公告)号：US20250138157A1
公开(公告)日：2025-05-01
申请号：US18915289
申请日：2024-10-14
Applicant: STMicroelectronics International N.V.
Inventor： Tat Ming TEO , Yandong MAO , Andrew John PRICE , William HALLIDAY
Abstract: The present disclosure provides an optical sensor module. An example optical sensor module includes a light-emitting device; a light-receiving sensor; and a module cap adapted to at least partially cover the light-emitting device and the light-receiving sensor, the module cap being a molded cap, the molded cap being formed of a molding material comprising electrically conductive particles dispersed therein for providing electromagnetic interference shielding.
-
公开(公告)号：US20250138155A1
公开(公告)日：2025-05-01
申请号：US18915164
申请日：2024-10-14
Applicant: STMICROELECTRONICS INTERNATIONAL N.V.
Inventor： Yandong MAO , Tat Ming TEO , Fraser WILLIAMS
Abstract: The present disclosure provides an optical sensor module. An example optical sensor module comprises: a substrate comprising first conductive pads; a module cap assembled on the substrate; a connecting flex incorporated in the module cap, the connecting flex being adapted to electrically couple at least one of the first conductive pads to at least one component mounted on and/or inside the module cap; and the connecting flex comprising at least one metal layer covered by, or encapsulated in, at least one dielectric layer.
-
公开(公告)号：US20250132673A1
公开(公告)日：2025-04-24
申请号：US18489410
申请日：2023-10-18
Applicant: STMicroelectronics International N.V.
Inventor： Niccolò Brambilla , Valeria Bottarel , Sandro Rossi , Alessandro Saccà
Abstract: A DC/DC converter including a low side and a high side is disclosed. The converter includes a first switching device being part of the low side, a low side current generator configured to generate a low side current flowing in the first switching device, a second switching device, a compensation resistor coupled in series to the second switching device, a valley current reference current generator configured to generate a valley current threshold current (Ivalclth) flowing in the second switching device and in the compensation resistor for obtaining a first voltage value, and a comparator configured to compare the first voltage value and a reference voltage for generating an error signal as a function of the comparison, the error signal controlling a conductivity of the first switching device of the low side.
-
Patent Agency Ranking
公开(公告)号：US20250125279A1
公开(公告)日：2025-04-17
申请号：US18485523
申请日：2023-10-12
Applicant: STMicroelectronics International N.V.
Inventor： Kai Quan CHENG , Tat Ming TEO , Andrew John PRICE , William HALLIDAY , Bhagya Prakash BANDUSENA , Calum RITCHIE
IPC: H01L23/552 , H01L23/00
Abstract: An example apparatus and optical emission device for preventing the transmission of electromagnetic radiation to and from targeted electrical components of an electronic device are provided. The example apparatus may include an optical emissions component electrically connected to a target electrical portion and configured to generate an optical output. The example apparatus may further include a wire bond electromagnetic interference cage configured to block the passage of electromagnetic emissions. The wire bond electromagnetic interference cage may include a plurality of bond wires, wherein each bond wire is electrically coupled to an electrical ground, and wherein the wire bond electromagnetic interference cage overlays at least a portion of the target electrical portion. In addition, the wire bond electromagnetic interference cage may further define an electromagnetic interference cage opening through which the optical output passes.
-
公开(公告)号：US20250125232A1
公开(公告)日：2025-04-17
申请号：US18910748
申请日：2024-10-09
Applicant: STMicroelectronics International N.V.
Inventor： Brunella CAFRA , Antonio LANDI , Agata GRASSO , Crocifisso Marco Antonio RENNA
IPC: H01L23/495
Abstract: Wettable metalization multilayer formed by an adhesion layer, containing titanium; a barrier layer, containing nickel; and a sintering layer, containing silver. A portion of the sintering layer, facing the barrier layer, contains atoms of a metal material chosen between aluminum and tin. A portion of the barrier layer facing the sintering layer may contain atoms of the metal material. The sintering layer is obtained depositing by PVD and spinning a metal material layer and then a silver layer, causing the diffusion of the atoms of the metal material in the silver layer.
-
公开(公告)号：US20250125228A1
公开(公告)日：2025-04-17
申请号：US18910661
申请日：2024-10-09
Applicant: STMicroelectronics International N.V.
Inventor： Guendalina CATALANO , Alessandro MELLINA GOTTARDO , Alberto ARRIGONI
IPC: H01L23/495 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/31
Abstract: A semiconductor die is arranged at a die mounting region at a first surface of a die pad in a substrate. The die pad has a second surface opposite the first surface. Laser beam energy is applied to the second surface of the die pad to form in the second surface of the die pad a recessed peripheral portion surrounding a central portion opposite the die mounting region at the first surface. An encapsulation of electrically insulating material is molded onto the substrate. During molding, the electrically insulating material covers the recessed peripheral portion and leakage of the electrically insulating material over the central portion is countered in response to the peripheral portion of the second surface of the die pad being recessed.
-
公开(公告)号：US20250119129A1
公开(公告)日：2025-04-10
申请号：US18830200
申请日：2024-09-10
Applicant: STMicroelectronics International N.V.
Inventor： Stephane Razafimandimby
Abstract: The present description relates to an electronic circuit comprising a first circuit configured to generate, based on a first periodic analog signal, a plurality of second signals having offset voltage levels, a second circuit configured to generate third periodic digital signals according to respective crossings, by the second signals, of at least one threshold, and a third circuit configured to determine an amplitude range in which the first periodic analog signal is located, according to a number of the third periodic digital signals.
-
公开(公告)号：US20250117499A1
公开(公告)日：2025-04-10
申请号：US18483278
申请日：2023-10-09
Applicant: STMicroelectronics International N.V.
Inventor： Michael PEETERS
Abstract: Various examples in accordance with the present disclosure provide example methods, systems, and apparatuses for data encryption.
-
-
-
-
-
-
-
-
-
Search Results
1961
records
(took 0.031 seconds)
