公开(公告)号：US20100316076A1

公开(公告)日：2010-12-16

申请号：US12725894

申请日：2010-03-17

Applicant: Alex Behfar ,  Cristian Stagarescu

Inventor： Alex Behfar ,  Cristian Stagarescu

IPC: H01S5/12 ,  H01S5/22 ,  H01S5/223 ,  H01S5/18 ,  G02B6/10

CPC classification number: H01S5/18 ,  G02B6/4214 ,  H01S5/02284 ,  H01S5/0264 ,  H01S5/028 ,  H01S5/0654 ,  H01S5/1085 ,  H01S5/125 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2301/18

Abstract: A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining a first wall forming an angled facet at one end of the active region, the first wall having a normal that is at a non-parallel angle relative to the longitudinal axis of the waveguide structure. The trench also defines a second wall located opposite the first wall.

Abstract translation: 包括衬底的表面发射光子器件; 以及衬底上的波导结构。 波导结构包括沿其纵向轴线的有源区域，并且有源区域用于产生光。 波导结构还具有横向于有源区域形成的沟槽，并且限定在有源区域的一端形成倾斜小面的第一壁，第一壁具有相对于纵向轴线成非平行角度的法线 的波导结构。 沟槽还限定了与第一壁相对的第二壁。

公开(公告)号：US20070045637A1

公开(公告)日：2007-03-01

申请号：US11509015

申请日：2006-08-24

Applicant: Alex Behfar ,  Wilfried Lenth

Inventor： Alex Behfar ,  Wilfried Lenth

IPC: H01L33/00

CPC classification number: H01S5/0207 ,  G11B7/127 ,  G11B7/22 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/026 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4056 ,  H01S2301/18

Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively. The waveguide length and width are selected so that for a given defect density D, the yield YD is larger than 50%.

Abstract translation: 用于产生具有良好的光学波前特征的激光器的方法和结构，例如光学存储所需要的，包括提供一种激光器，其中从激光器前刻面出射的输出光束基本上被半导体芯片的边缘阻挡，以防止有害的光束 扭曲。 半导体激光器结构在至少具有下包层，有源层，上覆层和接触层的基板上外延生长。 通过光刻定义的掩模的干法蚀刻产生长度为1cm和宽度b m的激光台面。 使用光刻和蚀刻的另一序列来形成在台面顶部具有宽度w的脊结构。 蚀刻步骤还在激光波导结构的端部上形成反射镜或刻面。 可以选择芯片的长度长度和宽度b 作为等于或长于波导长度l1c和台面的方便值 宽度b 。 选择波导长度和宽度，使得对于给定的缺陷密度D，产率Y D大于50％。

公开(公告)号：US20060291514A1

公开(公告)日：2006-12-28

申请号：US11455636

申请日：2006-06-20

Applicant: Alex Behfar ,  Alfred Schremer ,  Cristian Stagarescu ,  Vainateya

Inventor： Alex Behfar ,  Alfred Schremer ,  Cristian Stagarescu ,  Vainateya

IPC: H01S5/02 ,  H01L21/00

CPC classification number: H01S5/0201 ,  B82Y20/00 ,  H01S5/0042 ,  H01S5/0203 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/028 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333

Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.

Abstract translation: 制造能够发射蓝光的激光的工艺，其中在CAIBE中使用超过500℃的温度和超过500V的离子束蚀刻GaN晶片以形成激光波导和反射镜。

公开(公告)号：US07012291B2

公开(公告)日：2006-03-14

申请号：US10620348

申请日：2003-07-17

Applicant: Alex Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

Inventor： Alex Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

IPC: H01L31/062 ,  H01L21/302

CPC classification number: G02B6/12002 ,  B81B2201/047 ,  B81C99/008 ,  B81C2201/0159 ,  G02B6/13 ,  G02B6/4204 ,  G02B6/4249 ,  G03F7/0037 ,  Y10S438/948 ,  Y10S438/949 ,  Y10S438/95

Abstract: Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer of photoresist material is spun onto a substrate surface and is exposed in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer of photoresist material is deposited and is also exposed in a desired pattern. Subsequent layers are spun onto the top surface of prior layers and exposed, and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure.

公开(公告)号：US20050157770A1

公开(公告)日：2005-07-21

申请号：US11037334

申请日：2005-01-19

Applicant: Alex Behfar ,  Malcolm Green ,  Alfred Schremer

Inventor： Alex Behfar ,  Malcolm Green ,  Alfred Schremer

IPC: H01L21/00 ,  H01S5/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/18 ,  H01S5/40

CPC classification number: H01S5/0264 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02292 ,  H01S5/0262 ,  H01S5/0683 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2022 ,  H01S5/4012 ,  H01S5/4056 ,  H01S5/4087

Abstract: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.

Abstract translation: 集成在单个芯片（20）的相应外延层上的激光器（22）和检测器（24）与片上和/或外部光学器件（62）配合，以将由激光器发射的第一波长的光耦合到单个外部 装置，例如光纤（60），并且将从外部装置接收的不同波长的光同时耦合到检测器以提供双向光子操作。 多个激光器和检测器可以集成在芯片上以提供多个双向通道。

公开(公告)号：US20050083982A1

公开(公告)日：2005-04-21

申请号：US10958069

申请日：2004-10-05

Applicant: Alex Behfar

Inventor： Alex Behfar

IPC: H01S20060101 ,  H01S3/08 ,  H01S5/00 ,  H01S5/026 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/125 ,  H01S5/14 ,  H01S5/18 ,  H01S5/22 ,  H01S5/223 ,  H01S5/40 ,  H01S5/42

CPC classification number: H01S5/0264 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/0267 ,  H01S5/0654 ,  H01S5/0683 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/125 ,  H01S5/141 ,  H01S5/18 ,  H01S5/22 ,  H01S5/2231 ,  H01S5/4012 ,  H01S5/42

Abstract: A surface-emitting laser, in which light is emitted vertically at one end from a 45°-angled facet, includes a second end having a perpendicular facet from which light is emitted horizontally, for monitoring.

Abstract translation: 一个表面发射激光器，其一端从45°角的小平面垂直发射光，包括具有垂直小面的第二端，光从该垂直面垂直射出，用于监视。

公开(公告)号：US06792025B1

公开(公告)日：2004-09-14

申请号：US10226076

申请日：2002-08-23

Applicant: Alex Behfar ,  Alfred T. Schremer, Jr. ,  Cristian B. Stagarescu

Inventor： Alex Behfar ,  Alfred T. Schremer, Jr. ,  Cristian B. Stagarescu

IPC: H01S3083

CPC classification number: H01S5/1071 ,  H01S5/0265 ,  H01S5/062 ,  H01S5/065 ,  H01S5/1039 ,  H01S5/40 ,  H01S5/50

Abstract: An integrated semiconductor laser device capable of emitting light of selected wavelengths includes multiple ring lasers of different cavity lengths coupled in series or in parallel to a common output to produce an output beam having a wavelength corresponding to the selected ring lasers.

Abstract translation: 能够发射所选波长的光的集成半导体激光器件包括与公共输出串联或并联耦合的不同腔长度的多个环形激光器，以产生具有对应于所选环形激光器的波长的输出光束。

公开(公告)号：US06680961B2

公开(公告)日：2004-01-20

申请号：US09918544

申请日：2001-08-01

Applicant: Alex Behfar

Inventor： Alex Behfar

IPC: H01S3083

CPC classification number: H01S5/1071 ,  Y10S438/94

Abstract: A ring-type laser including a traveling wave cavity which incorporates at least first and second straight cavity sections and at least one curved cavity section. Corresponding first ends of the straight cavity sections are interconnected at a first light-emitting facet, and second ends of the straight sections are interconnected by the curved waveguide. Additional curved and straight sections can be linked to provide various ring configurations.

Abstract translation: 一种包括行波腔的环形激光器，其包括至少第一和第二直腔部分和至少一个弯曲腔部分。 直腔区域的相应的第一端在第一发光小面处相互连接，并且直线部分的第二端通过弯曲波导相互连接。 可以连接附加的弯曲和直线部分以提供各种环形结构。

公开(公告)号：US06653244B2

公开(公告)日：2003-11-25

申请号：US09955123

申请日：2001-09-19

Applicant: Alex Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

Inventor： Alex Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

IPC: H01L21469

CPC classification number: G02B6/12002 ,  B81B2201/047 ,  B81C99/008 ,  B81C2201/0159 ,  G02B6/13 ,  G02B6/4204 ,  G02B6/4249 ,  G03F7/0037 ,  Y10S438/948 ,  Y10S438/949 ,  Y10S438/95

Abstract: Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer of photoresist material is spun onto a substrate surface and is exposed in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer of photoresist material is deposited and is also exposed in a desired pattern. Subsequent layers are spun onto the top surface of prior layers and exposed, and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure.

公开(公告)号：US08419956B2

公开(公告)日：2013-04-16

申请号：US13273421

申请日：2011-10-14

Applicant: Alex Behfar ,  Cristian Stagarescu

Inventor： Alex Behfar ,  Cristian Stagarescu

IPC: B29D11/00

CPC classification number: H01S5/18 ,  G02B6/4214 ,  H01S5/02284 ,  H01S5/0264 ,  H01S5/028 ,  H01S5/0654 ,  H01S5/1085 ,  H01S5/125 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2301/18

Abstract: A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining a first wall forming an angled facet at one end of the active region, the first wall having a normal that is at a non-parallel angle relative to the longitudinal axis of the waveguide structure. The trench also defines a second wall located opposite the first wall.

Abstract translation: 包括衬底的表面发射光子器件; 以及衬底上的波导结构。 波导结构包括沿其纵向轴线的有源区域，并且有源区域用于产生光。 波导结构还具有横向于有源区域形成的沟槽，并且限定在有源区域的一端处形成成角度的小面的第一壁，第一壁具有相对于纵向轴线成非平行角度的法线 的波导结构。 沟槽还限定了与第一壁相对的第二壁。