Reflective type beam splitting and combining device
    11.
    发明申请
    Reflective type beam splitting and combining device 审中-公开
    反射式光束分离和组合装置

    公开(公告)号:US20050243283A1

    公开(公告)日:2005-11-03

    申请号:US10833140

    申请日:2004-04-28

    CPC classification number: G02B27/149 G02B27/1026 G03B21/28

    Abstract: A reflective type beam splitting and combining device comprises a cubic prism set and three light valves. A first dielectric thin film and a second dielectric thin film are formed on diagonal tangential planes of two sets of opposed surfaces of the prism set so that the prism set can reflect or transmit two light beams of the three primary colors incident from two incidence faces, respectively. The three light valves are arranged on three adjacent surfaces of the prism set to let every two of them be adjacent to each other. The three light valves are used for modulating the three primary colors transmitted or reflected by the prism set. Finally, the three primary color lights are assembled into an output light beam by the prism set. The above optical structure can effectively shorten the back focus to shrink the size and reduce the difficulty in manufacturing.

    Abstract translation: 反射型光束分离和组合装置包括立方棱镜组和三个光阀。 在棱镜组的两组相对表面的对角切向平面上形成第一电介质薄膜和第二电介质薄膜,使得棱镜组可以反射或透射从两个入射面入射的三原色的两个光束, 分别。 三个光阀布置在棱镜的三个相邻表面上,以使它们中的每两个彼此相邻。 三个光阀用于调制由棱镜组传送或反射的三原色。 最后,三原色光通过棱镜组合成输出光束。 上述光学结构可以有效地缩短后焦距,缩小尺寸并降低制造难度。

    METALLIC PHOTONIC BOX AND ITS FABRICATION TECHNIQUES
    12.
    发明申请
    METALLIC PHOTONIC BOX AND ITS FABRICATION TECHNIQUES 有权
    金属光电箱及其制造技术

    公开(公告)号:US20050133926A1

    公开(公告)日:2005-06-23

    申请号:US10746908

    申请日:2003-12-23

    CPC classification number: H01K3/02 H01K1/02

    Abstract: A metallic photonic box capable of intensifying light at a certain wavelength, includes: a metallic surrounding forming a resonance chamber; and an insulator layer, disposed in the resonance chamber, having a predetermined dimension defining a cut-off wavelength, which inhibits light of a wavelength greater than the cut-off wavelength from resonating, whereby when the metallic photonic box is heated to generate light radiation, the light radiation is intensified at a wavelength rage predetermined by the cut-off wavelength.

    Abstract translation: 能够增强一定波长的光的金属光子盒包括:形成谐振室的金属环绕; 以及设置在共振室中的具有限定截止波长的预定尺寸的绝缘体层,其阻止大于截止波长的波长的光谐振,由此当金属光子盒被加热以产生光辐射 ,光辐射在以截止波长预定的波长范围内增强。

    Method of improving electroluminescent efficiency of a MOS device by etching a silicon substrate thereof
    13.
    发明授权
    Method of improving electroluminescent efficiency of a MOS device by etching a silicon substrate thereof 有权
    通过蚀刻其硅衬底来提高MOS器件的电致发光效率的方法

    公开(公告)号:US06905977B2

    公开(公告)日:2005-06-14

    申请号:US10396448

    申请日:2003-03-26

    CPC classification number: H01L33/0004 B82Y20/00

    Abstract: The present invention discloses a method of improving an electroluminescent efficiency of a MOS device by etching a semiconductor substrate thereof. A chemical etching process is performed to remove surface states or surface defects located on the surface of a silicon substrate before a nanoparticle layer and a conducting layer is formed on the silicon substrate, in order that the non-radiative electron-hole recombination centers located on the surface of silicon substrate is suppressed. Accordingly, the percentage of radiative electron-hole recombination is heightened and the electroluminescent efficiency of a MOS light emitting device is drastically enhanced. Advantageously, the chemical etching step is able to create a nanostructure on the surface of the silicon substrate to increase the probability of the collision of electron-hole pairs and phonons, and the electroluminescent efficiency of a MOS light emitting device is improved as well.

    Abstract translation: 本发明公开了一种通过蚀刻其半导体衬底来提高MOS器件的电致发光效率的方法。 在将纳米颗粒层和导电层形成在硅衬底上之前,进行化学蚀刻工艺以去除位于硅衬底表面上的表面状态或表面缺陷,以使非辐射电子 - 空穴复合中心位于 硅衬底的表面被抑制。 因此,提高了辐射电子 - 空穴复合的百分比,并且显着提高了MOS发光器件的电致发光效率。 有利地,化学蚀刻步骤能够在硅衬底的表面上产生纳米结构,以增加电子 - 空穴对和声子的碰撞的可能性,并且MOS发光器件的电致发光效率也得到改善。

    METHOD FOR PRODUCING SILICON WAVEGUIDES ON NON-SOI SUBSTRATE
    14.
    发明申请
    METHOD FOR PRODUCING SILICON WAVEGUIDES ON NON-SOI SUBSTRATE 有权
    在非SOI衬底上生产硅波形的方法

    公开(公告)号:US20130095659A1

    公开(公告)日:2013-04-18

    申请号:US13458900

    申请日:2012-04-27

    Abstract: The present invention relates to a method for producing silicon waveguides on non-SOI substrate (non-silicon-on-insulator substrate), and particularly relates to a method for producing silicon waveguides on silicon substrate with a laser. This method includes the following steps: (1) forming a ridge structure with high aspect ratio on a non-SOI substrate; (2) melting and reshaping the ridge structure by laser illumination for forming a structure having broad upper part and narrow lower part; and (3) oxidizing the structure having broad upper part and narrow lower part to form a silicon waveguide.

    Abstract translation: 本发明涉及一种在非SOI衬底(非硅绝缘体衬底)上制造硅波导的方法,特别涉及一种用激光在硅衬底上制造硅波导的方法。 该方法包括以下步骤:(1)在非SOI衬底上形成具有高纵横比的脊结构; (2)通过激光照射熔化并重新形成脊状结构,形成具有宽的上部和下部的结构的结构; 和(3)氧化具有宽的上部和较窄的下部的结构以形成硅波导。

    Suspension or solution for making organic optoelectronic device, making method thereof, and applications
    15.
    发明授权
    Suspension or solution for making organic optoelectronic device, making method thereof, and applications 有权
    制造有机光电子器件的悬浮液或溶液,其制备方法和应用

    公开(公告)号:US08338826B2

    公开(公告)日:2012-12-25

    申请号:US12574697

    申请日:2009-10-06

    Abstract: A suspension or solution for an organic optoelectronic device is disclosed. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the method of making and applications of the suspension or solution are also disclosed.

    Abstract translation: 公开了一种用于有机光电子器件的悬浮液或溶液。 悬浮液或溶液的组成包括至少一种微/纳米过渡金属氧化物和溶剂。 悬浮液或溶液的组成可以选择性地包括至少一种过渡金属氧化物离子或过渡金属氧化物的前体。 此外,还公开了制备和应用悬浮液或溶液的方法。

    Thin-film transistor and forming method thereof
    16.
    发明授权
    Thin-film transistor and forming method thereof 有权
    薄膜晶体管及其形成方法

    公开(公告)号:US08288767B2

    公开(公告)日:2012-10-16

    申请号:US12651992

    申请日:2010-01-04

    Abstract: A method for forming a thin-film transistor (TFT) includes providing a substrate, forming a first patterned conducting layer on the substrate, forming an organic dielectric layer on the first patterned conducting layer and the substrate, forming a seeding layer on the organic dielectric layer, using the seeding layer as a crystal growing base to form an inorganic semiconductor layer on the seeding layer, and forming a second patterned conducting layer on the inorganic semiconductor layer.

    Abstract translation: 一种用于形成薄膜晶体管(TFT)的方法包括:提供衬底,在衬底上形成第一图案化导电层,在第一图案化导电层和衬底上形成有机电介质层,在有机电介质上形成接种层 层,使用所述接种层作为晶体生长基底,以在所述接种层上形成无机半导体层,以及在所述无机半导体层上形成第二图案化导电层。

    Suspending Liquid or Solution for Organic Optoelectronic Device, Making Method thereof, and Applications
    17.
    发明申请
    Suspending Liquid or Solution for Organic Optoelectronic Device, Making Method thereof, and Applications 有权
    有机光电器件的悬浮液或溶液,其制备方法和应用

    公开(公告)号:US20120235139A1

    公开(公告)日:2012-09-20

    申请号:US13482866

    申请日:2012-05-29

    Abstract: A suspension or solution for an organic optoelectronic device is disclosed. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the method of making and applications of the suspension or solution are also disclosed.

    Abstract translation: 公开了一种用于有机光电子器件的悬浮液或溶液。 悬浮液或溶液的组成包括至少一种微/纳米过渡金属氧化物和溶剂。 悬浮液或溶液的组成可以选择性地包括至少一种过渡金属氧化物离子或过渡金属氧化物的前体。 此外,还公开了制备和应用悬浮液或溶液的方法。

    Micro/nanostructure PN junction diode array thin-film solar cell and method for fabricating the same
    18.
    发明授权
    Micro/nanostructure PN junction diode array thin-film solar cell and method for fabricating the same 有权
    微/纳米结构PN结二极管阵列薄膜太阳能电池及其制造方法

    公开(公告)号:US08258396B2

    公开(公告)日:2012-09-04

    申请号:US12318356

    申请日:2008-12-29

    Abstract: The present invention discloses a micro/nanostructure PN junction diode array thin-film solar cell and a method for fabricating the same, wherein a microstructure or sub-microstructure PN junction diode array, such as a nanowire array or a nanocolumns array, is transferred from a source-material wafer to two pieces of transparent substrates, which are respectively corresponding to two electric conduction types, to fabricate a thin-film solar cell. In the present invention, the micro/nanostructure PN junction diode array has advantages of a fine-quality crystalline semiconductor, and the semiconductor substrate can be reused to save a lot of semiconductor material. Besides, the present invention can make the best of sunlight energy via stacking up the solar cells made of different types of semiconductor materials to absorb different wavebands of the sunlight spectrum.

    Abstract translation: 本发明公开了一种微/纳米结构PN结二极管阵列薄膜太阳能电池及其制造方法,其中微结构或亚微结构PN结二极管阵列(例如纳米线阵列或纳米柱阵列)从 源材料晶片分别对应于两个导电类型的两片透明基板,以制造薄膜太阳能电池。 在本发明中,微/纳结构PN结二极管阵列具有优质晶体半导体的优点,并且半导体衬底可被重复使用以节省大量的半导体材料。 此外,本发明可以通过堆叠由不同类型的半导体材料制成的太阳能电池来吸收不同的太阳光谱波段,从而最大程度地利用阳光的能量。

    Organic-inorganic lighting device and a method for fabricating the same
    19.
    发明授权
    Organic-inorganic lighting device and a method for fabricating the same 有权
    有机 - 无机照明装置及其制造方法

    公开(公告)号:US08143778B2

    公开(公告)日:2012-03-27

    申请号:US12453402

    申请日:2009-05-11

    CPC classification number: H05B33/26 H01L51/5048 H01L2251/5369

    Abstract: An organic-inorganic lighting device and a method for fabricating the same is disclosed. Firstly, a conductive substrate is provided, and an inorganic conducting film layer and a seed layer are formed in turn on the conductive substrate. Next, an array of micro and nano zinc oxide wire is formed on the seed layer by using properties of the seed layer. Finally, an electrode layer is formed on the array of micro and nano zinc oxide wire. The invention solves the problem of low mobility of electrons in inorganic materials.

    Abstract translation: 公开了一种有机 - 无机照明装置及其制造方法。 首先,提供导电性基板,在导电性基板上依次形成无机导电膜层和种子层。 接下来,通过种子层的性质,在种子层上形成微纳米氧化锌线阵列。 最后,在微纳米氧化锌线阵列上形成电极层。 本发明解决了无机材料中电子迁移率低的问题。

    Flexible Optoelectronic Device Having Inverted Electrode Structure and Method for Making the same
    20.
    发明申请
    Flexible Optoelectronic Device Having Inverted Electrode Structure and Method for Making the same 有权
    具有倒置电极结构的柔性光电子器件及其制造方法

    公开(公告)号:US20110037055A1

    公开(公告)日:2011-02-17

    申请号:US12612670

    申请日:2009-11-04

    Abstract: A flexible optoelectronic device having inverted electrode structure is disclosed. The flexible optoelectronic device having inverted electrode structure includes a flexible plastic substrate having a cathode structure, an n-type oxide semiconductor layer, an organic layer, and an anode. The n-type oxide semiconductor layer is disposed on the cathode structure. The organic layer is disposed on the n-type oxide semiconductor layer. The anode is electrically connected with the organic layer.

    Abstract translation: 公开了一种具有反向电极结构的柔性光电器件。 具有反转电极结构的柔性光电子器件包括具有阴极结构的柔性塑料基板,n型氧化物半导体层,有机层和阳极。 n型氧化物半导体层设置在阴极结构上。 有机层配置在n型氧化物半导体层上。 阳极与有机层电连接。

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