Abstract:
Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build up layers may be formed on the side of the base layer further from the die.
Abstract:
An embodiment of the present invention is a technique to fabricate a metal interconnect. A first metal trace is printed on a die attached to a substrate or a cavity of a heat spreader in a package to electrically connect the first metal trace to a power contact in the substrate. A device is mounted on the first metal trace. The device receives power from the substrate when the package is powered.
Abstract:
A method of forming a via having a stress buffer collar, wherein the stress buffer collar can absorb stress resulting from a mismatch in the coefficients of thermal expansion of the surrounding materials. Other embodiments are described and claimed.
Abstract:
Electronic device support and processing methods are described. One embodiment includes a method of processing an electronic device including solder bumps extending therefrom. The method includes providing at least one fluid selected from the group consisting of electrorheological fluids and magnorheological fluids on a support structure. The solder bumps extending from the electronic device are positioned in the fluid. The fluid is activated by applying a field selected from the group consisting of an electric field and a magnetic field to the fluid. The activated fluid mechanically holds the electronic device in place. A surface of the electronic device is polished while the electronic device is held in place by the activated fluid. The fluid is deactivated by removing the applied field from the fluid, and the electronic device is separated from the deactivated fluid. Other embodiments are described and claimed.
Abstract:
An embodiment of the present invention is a technique to fabricate a metal interconnect. A first metal trace is printed on a die attached to a substrate or a cavity of a heat spreader in a package to electrically connect the first metal trace to a power contact in the substrate. A device is mounted on the first metal trace. The device receives power from the substrate when the package is powered.
Abstract:
An embodiment of the present invention is a technique to fabricate a metal interconnect. A first metal trace is printed on a die attached to a substrate or a cavity of a heat spreader in a package to electrically connect the first metal trace to a power contact in the substrate. A device is mounted on the first metal trace. The device receives power from the substrate when the package is powered.
Abstract:
Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build up layers may be formed on the side of the base layer further from the die.
Abstract:
Nano-scale particle paste may be used for on-die routing and other applications using deposition and inkjet printing. A metal paste is applied to a surface of a die to electrically couple two spaced apart connection points of the die. Alternatively, or in addition, the paste may contain carbon nanotubes. The paste may be used on other surfaces as well.
Abstract:
In one embodiment, a package-to-package stack is assembled comprising a first integrated circuit package, and a second integrated circuit package which are mechanically and electrically connected using an interposer. In one embodiment, the interposer 106 includes columnar interconnects which may be fabricated by etching a conductive member such as copper foil, for example. In one application, the pitch or center to center spacing of the columnar interconnects may be defined by masking techniques to provide an interconnect pitch suitable for a particular application. In yet another aspect, etching rates may be controlled to provide height to width aspect ratios of the columnar interconnects which are suitable for various applications.
Abstract:
Electronic device support and processing methods are described. One embodiment includes a method of processing an electronic device including solder bumps extending therefrom. The method includes providing at least one fluid selected from the group consisting of electrorheological fluids and magnorheological fluids on a support structure. The solder bumps extending from the electronic device are positioned in the fluid. The fluid is activated by applying a field selected from the group consisting of an electric field and a magnetic field to the fluid. The activated fluid mechanically holds the electronic device in place. A surface of the electronic device is polished while the electronic device is held in place by the activated fluid. The fluid is deactivated by removing the applied field from the fluid, and the electronic device is separated from the deactivated fluid. Other embodiments are described and claimed.