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    Wafer aligning apparatus and related method
    13.
    发明授权
    Wafer aligning apparatus and related method 失效
    晶圆对准装置及相关方法

    公开(公告)号：US08600150B2

    公开(公告)日：2013-12-03

    申请号：US12900645

    申请日：2010-10-08

    Applicant: Heok-Jae Lee ,  Sang-Ho Kim ,  Hyu-Rim Park ,  Do-In Bae ,  Kee-Weone Seo ,  Chang-Woo Woo

    Inventor： Heok-Jae Lee ,  Sang-Ho Kim ,  Hyu-Rim Park ,  Do-In Bae ,  Kee-Weone Seo ,  Chang-Woo Woo

    IPC: G06K9/00 ,  G06K9/68 ,  H04N7/18

    CPC classification number: H01L21/681 ,  G06K9/3208 ,  G06K9/3216 ,  G06T7/74 ,  G06T2207/30148

    Abstract: A wafer aligning apparatus includes a laser sensor that generates a trigger signal, a CCD camera imaging a wafer in response to the trigger signal, a signal processing unit that calculates a center alignment correction value for the wafer, and a robot controller that receives the center alignment correction value to control movement of a transfer robot. The laser sensor generates the trigger signal in accordance with a change in reflected light detected by the laser sensor, the change in the amount of reflected light being detected by the laser sensor when a boundary between a blade of the transfer robot and a coupler of the transfer robot passes under the laser sensor.

    Abstract translation: 晶片对准装置包括产生触发信号的激光传感器，响应于触发信号成像晶片的CCD照相机，计算晶片的中心对准校正值的信号处理单元，以及接收中心的机器人控制器 对准校正值来控制传送机器人的移动。 激光传感器根据激光传感器检测到的反射光的变化产生触发信号，当传送机器人的叶片与传感器的耦合器之间的边界处时，激光传感器检测到的反射光量的变化 传送机器人通过激光传感器。

    WAFER ALIGNING APPARATUS AND RELATED METHOD
    14.
    发明申请
    WAFER ALIGNING APPARATUS AND RELATED METHOD 失效
    WAFER ALIGNING设备及相关方法

    公开(公告)号：US20110050882A1

    公开(公告)日：2011-03-03

    申请号：US12900645

    申请日：2010-10-08

    Applicant: Heok-Jae LEE ,  Sang-Ho KIM ,  Hyu-Rim PARK ,  Do-In BAE ,  Kee-Weone SEO ,  Chang-Woo WOO

    Inventor： Heok-Jae LEE ,  Sang-Ho KIM ,  Hyu-Rim PARK ,  Do-In BAE ,  Kee-Weone SEO ,  Chang-Woo WOO

    IPC: H04N7/18

    CPC classification number: H01L21/681 ,  G06K9/3208 ,  G06K9/3216 ,  G06T7/74 ,  G06T2207/30148

    Abstract: A wafer aligning apparatus includes a laser sensor that generates a trigger signal, a CCD camera imaging a wafer in response to the trigger signal, a signal processing unit that calculates a center alignment correction value for the wafer, and a robot controller that receives the center alignment correction value to control movement of a transfer robot. The laser sensor generates the trigger signal in accordance with a change in reflected light detected by the laser sensor, the change in the amount of reflected light being detected by the laser sensor when a boundary between a blade of the transfer robot and a coupler of the transfer robot passes under the laser sensor.

    Abstract translation: 晶片对准装置包括产生触发信号的激光传感器，响应于触发信号成像晶片的CCD照相机，计算晶片的中心对准校正值的信号处理单元，以及接收中心的机器人控制器 对准校正值来控制传送机器人的移动。 激光传感器根据激光传感器检测到的反射光的变化产生触发信号，当传送机器人的叶片与传感器的耦合器之间的边界处时，激光传感器检测到的反射光量的变化 传送机器人通过激光传感器。

    Apparatus for catching byproducts in semiconductor device fabrication equipment
    15.
    发明授权
    Apparatus for catching byproducts in semiconductor device fabrication equipment 失效
    用于在半导体器件制造设备中捕获副产品的装置

    公开(公告)号：US07491292B2

    公开(公告)日：2009-02-17

    申请号：US11327408

    申请日：2006-01-09

    Applicant: Jung-Hun Han ,  Jin-Jun Park ,  Do-In Bae

    Inventor： Jung-Hun Han ,  Jin-Jun Park ,  Do-In Bae

    IPC: C23F1/00 ,  H01L21/306

    CPC classification number: C23C16/4412

    Abstract: An apparatus for catching byproducts in semiconductor device processing equipment is disposed in an exhaust line between a process chamber and a vacuum pump. The apparatus includes a cylindrical trap housing member, an upper cover and a lower cover covering the upper part and lower part of the trap housing, respectively, a heater disposed under the upper cover, first and second cooling plates disposed in the trap housing, a post spacing the cooling plates, apart and a cooling system for cooling respective portions of the apparatus. The cooling system includes a delivery pipe for supplying refrigerant, a discharge pipe for discharging the refrigerant from the apparatus, first cooling piping extending through each cooling plate and connected to the delivery and discharge pipes, and second cooling piping extending helically along the outer circumferential surface of the trap housing.

    Abstract translation: 在处理室和真空泵之间的排气管路中设置用于在半导体器件加工设备中捕获副产物的装置。 该装置包括圆柱形捕集器壳体构件，上盖和下盖，分别覆盖捕集器壳体的上部和下部，设置在上盖下方的加热器，设置在捕集器壳体中的第一和第二冷却板， 将间隔开的冷却板间隔开，并且冷却系统用于冷却设备的各个部分。 冷却系统包括用于供应制冷剂的输送管，用于从设备排出制冷剂的排出管，延伸穿过每个冷却板并连接到排出管的第一冷却管道，以及沿着外周表面螺旋地延伸的第二冷却管道 的陷阱外壳。

    Ion source element, ion implanter having the same and method of modifying the same
    16.
    发明申请
    Ion source element, ion implanter having the same and method of modifying the same 失效
    离子源元件，具有相同的离子注入机及其改性方法

    公开(公告)号：US20070075266A1

    公开(公告)日：2007-04-05

    申请号：US11521534

    申请日：2006-09-15

    Applicant: Su-han Yun ,  Jong-hyun Yang ,  Do-in Bae ,  Seong-gu Kim

    Inventor： Su-han Yun ,  Jong-hyun Yang ,  Do-in Bae ,  Seong-gu Kim

    IPC: H01J27/00

    CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/31701

    Abstract: An ion source element, an ion implanter having the ion source element and a method of modifying the ion source element are provided. In the ion source element, a chamber may have a cavity divided into a plurality of inner sections configured substantially perpendicularly to an axis defined through centers of ends of the cavity. The larger inner sections may be at, or near, a center of the cavity and become smaller toward the ends of the cavity. A filament may be disposed at one end of the chamber to emit thermal electrons. A repeller may extend into the chamber through the other end of the chamber. An inlet may be formed in a first cavity wall to introduce gas having a dopant species into the chamber. A beam slit may be formed in a second cavity wall, opposite the inlet, of the chamber to extract an ionized species of the gas from the chamber.

    Abstract translation: 提供离子源元件，具有离子源元素的离子注入机和修改离子源元件的方法。 在离子源元件中，腔室可以具有被分成多个内部部分的空腔，该多个内部部分基本上垂直于通过腔的端部中心限定的轴线。 更大的内部部分可以在空腔的中心处或附近，并且朝向空腔的端部变小。 灯丝可以设置在室的一端以发射热电子。 排斥器可以通过腔室的另一端延伸到腔室中。 入口可以形成在第一空腔壁中以将具有掺杂剂物质的气体引入室中。 可以在室的与入口相对的第二空腔壁中形成梁狭缝，以从室提取气体的离子化物质。

    Electrostatic chuck for supporting a substrate
    18.
    发明申请
    Electrostatic chuck for supporting a substrate 审中-公开
    用于支撑衬底的静电吸盘

    公开(公告)号：US20050105243A1

    公开(公告)日：2005-05-19

    申请号：US10990579

    申请日：2004-11-17

    Applicant: Tae-Won Lee ,  Jeong-Min Choi ,  Do-In Bae

    Inventor： Tae-Won Lee ,  Jeong-Min Choi ,  Do-In Bae

    IPC: H01L21/306 ,  H01L21/683 ,  H02H1/00

    CPC classification number: H01L21/6833

    Abstract: An electrostatic chuck to minimize an arc and a glow discharge during processing of a semiconductor substrate is provided, In one aspect, an electrostatic chuckin a processing chamber includes a body having a first hole for providing a cooling gas to a backside of a substrate to control a temperature of the substrate, an inner electrode for generating an electrostatic force and a dielectric layer. A ceramic block is tightly inserted into a first hole and has a second hole connected to the first hole. A third hole formed through the dielectric layer is connected to the first hole and the second hole. The cooling gas is provided to the backside of the substrate through the first hole or the second hole. Since the first hole is covered with the ceramic block, the generation of an arc or a glow discharge inside the first hole may be minimized, thereby preventing damage to the electrostatic chuck and improving production yields.

    Abstract translation: 提供了一种在半导体衬底的处理期间使电弧和辉光放电最小化的静电吸盘。一方面，一种处理室中的静电吸盘包括具有用于向衬底的背面提供冷却气体的第一孔的主体以控制 基板的温度，产生静电力的内部电极和电介质层。 陶瓷块被紧密插入第一孔中，并且具有连接到第一孔的第二孔。 通过电介质层形成的第三孔连接到第一孔和第二孔。 冷却气体通过第一孔或第二孔提供到衬底的背面。 由于第一孔被陶瓷块覆盖，所以可以使第一孔内的电弧或辉光放电的产生最小化，从而防止对静电卡盘的损坏并提高生产率。

    Apparatus for processing a substrate including a heating apparatus
    19.
    发明授权
    Apparatus for processing a substrate including a heating apparatus 有权
    一种用于处理包括加热装置的基板的装置

    公开(公告)号：US06787739B2

    公开(公告)日：2004-09-07

    申请号：US10264482

    申请日：2002-10-04

    Applicant: Tae-Won Lee ,  Do-In Bae ,  Sang-Yeoul Lee

    Inventor： Tae-Won Lee ,  Do-In Bae ,  Sang-Yeoul Lee

    IPC: H05B368

    CPC classification number: H01L21/67103 ,  H05B3/72

    Abstract: An apparatus for heating a substrate of a semiconductor device includes a hot plate, on which a semiconductor substrate is placed, and a heater for heating the hot plate. The hot plate is preferably a composite plate including a plurality of plates having different thermal conductivities from each other. For example, a first plate adjacent to the heater can be made of aluminum, which has a relatively high thermal conductivity. A second plate, laminated on top of the first plate, can be made of titanium or stainless steel, which both have a thermal conductivity lower than aluminum. A composite hot plate as disclosed herein is better able to maintain a constant temperature and a uniform temperature distribution in order to more uniformly heat a substrate and to reduce an amount of energy required for the heating process. In addition, the reliability and productivity of the semiconductor device manufactured by the apparatus can be improved.

    Abstract translation: 用于加热半导体器件的衬底的装置包括其上放置半导体衬底的加热板和用于加热热板的加热器。 热板优选为包括彼此具有不同热导率的多个板的复合板。 例如，与加热器相邻的第一板可以由铝制成，其具有相对较高的热导率。 层压在第一板顶部的第二板可以由钛或不锈钢制成，它们都具有比铝低的导热性。 如本文所公开的复合热板更能够保持恒定的温度和均匀的温度分布，以便更均匀地加热基底并减少加热过程所需的能量。 此外，可以提高由该装置制造的半导体器件的可靠性和生产率。

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