公开(公告)号：US07578944B2

公开(公告)日：2009-08-25

申请号：US11271835

申请日：2005-11-14

Applicant: Young-Min Min ,  Dae-Kyu Choi ,  Do-In Bae ,  Yun-Sik Yang ,  Wan-Goo Hwang ,  Jin-Man Kim

Inventor： Young-Min Min ,  Dae-Kyu Choi ,  Do-In Bae ,  Yun-Sik Yang ,  Wan-Goo Hwang ,  Jin-Man Kim

IPC: H01L21/302

CPC classification number: H01L21/31116 ,  H01J37/321 ,  H01J37/32357 ,  Y02C20/30 ,  Y02P70/605

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract translation: 制造半导体器件的方法可以包括：形成具有轴的主磁场，并形成基本上平行于该轴的辅助磁场; 沿着主磁场和辅助磁场之间的路径施加交流电; 允许气体沿着沿着电流路径的流动路径流动，从而从气体产生气体等离子体; 将气体等离子体提供到与产生气体等离子体的位置分离的室中; 以及通过使用气体等离子体来执行制造半导体器件的工艺。

公开(公告)号：US20070189596A1

公开(公告)日：2007-08-16

申请号：US11641870

申请日：2006-12-20

Applicant: Heok-Jae Lee ,  Sang-Ho Kim ,  Hyu-Rim Park ,  Do-In Bae ,  Kee-Weone Seo ,  Chang-Woo Woo

Inventor： Heok-Jae Lee ,  Sang-Ho Kim ,  Hyu-Rim Park ,  Do-In Bae ,  Kee-Weone Seo ,  Chang-Woo Woo

IPC: G06K9/00

CPC classification number: H01L21/681 ,  G06T7/33 ,  G06T7/74 ,  G06T2207/30148 ,  Y10S414/136

Abstract: Embodiments of the invention provide a wafer aligning apparatus and a wafer aligning method. In one embodiment, the wafer aligning apparatus comprises an imaging unit adapted to take an image of a wafer being transferred from a load lock chamber to a transfer chamber and adapted to convert the image into digital signals, and a signal processing unit adapted to calculate a center alignment correction value for the wafer by comparing the digital signals to a master image stored in the signal processing unit. The wafer aligning apparatus further comprises a robot controller adapted to receive the center alignment correction value from the signal processing unit and adapted to control a transfer robot in accordance with the center alignment correction value to provide the wafer to a process chamber such that the center of the wafer is substantially aligned.

Abstract translation: 本发明的实施例提供一种晶片对准装置和一种晶圆对准方法。 在一个实施例中，晶片对准装置包括成像单元，其适于将从负载锁定室传送的晶片的图像转移到传送室，并适于将图像转换成数字信号，以及信号处理单元， 通过将数字信号与存储在信号处理单元中的主图像进行比较来获得晶片的中心对准校正值。 晶片对准装置还包括机器人控制器，其适于从信号处理单元接收中心对准校正值，并且适于根据中心对准校正值来控制传送机器人，以将晶片提供给处理室，使得处理室的中心 晶片基本对齐。

公开(公告)号：US20050022742A1

公开(公告)日：2005-02-03

申请号：US10900150

申请日：2004-07-28

Applicant: Hyung-Sik Hong ,  Gyeong-Su Keum ,  Yong-Gab Kim ,  Chung-Hun Park ,  Do-In Bae ,  Seung-Ki Chae ,  Jung-Hun Cho

Inventor： Hyung-Sik Hong ,  Gyeong-Su Keum ,  Yong-Gab Kim ,  Chung-Hun Park ,  Do-In Bae ,  Seung-Ki Chae ,  Jung-Hun Cho

IPC: H01L21/205 ,  C23C16/458 ,  H01L21/00 ,  C23C16/00

CPC classification number: H01L21/67103 ,  C23C16/4586

Abstract: Chemical vapor deposition (CVD) processing equipment for use in fabricating a semiconductor device requiring deposition of an insulation layer or a metal layer includes a chamber having an exhaust line in a lower central portion thereof, a heater block for supporting a wafer to be supplied in an interior of the chamber, the heater block having a heating plate in an interior thereof, a support shaft for supporting the heater block, and an electrical wire for providing an electrical connection to the heating plate. The support shaft extends through a bottom of the chamber. The electrical wire extends through the bottom of the chamber within the support shaft.

Abstract translation: 用于制造需要沉积绝缘层或金属层的半导体器件的化学气相沉积（CVD）处理设备包括在其下部中心具有排气管的腔室，用于支撑要供应的晶片的加热器块 该室的内部，其内部具有加热板的加热器块，用于支撑加热器块的支撑轴和用于提供与加热板的电连接的电线。 支撑轴延伸穿过腔室的底部。 电线在支撑轴内延伸穿过腔室的底部。

公开(公告)号：US5567542A

公开(公告)日：1996-10-22

申请号：US360638

申请日：1994-12-21

Applicant: Do-In Bae

Inventor： Do-In Bae

IPC: H01M2/10

CPC classification number: H01M2/1083 ,  H01M2/1016 ,  H01M2/1077

Abstract: A holder of rechargeable battery cells includes a lower frame, a plurality of housings, a multiplicity of heat sinks and an upper frame to dissipate heat generated from the battery cells. The lower frame has a vertical rim and horizontal flanges extending inwardly from the bottom of the rim to define a receptacle. Each tubular housing accommodating the battery cells therein is received in the receptacle and supported by the lower frame. A pair of heat sink members are attached to opposing sides of each of the housings and each of the heat sink members has a large number of fins. A retainer including a frame, stay rods and securing members is used to secure the holder.

Abstract translation: 可充电电池单元的保持器包括下框架，多个壳体，多个散热器和上框架，以散发从电池单元产生的热量。 下框架具有垂直边缘和水平凸缘，其从边缘的底部向内延伸以限定容器。 容纳其中的电池单元的每个管状壳体被容纳在插座中并由下框架支撑。 一对散热构件附接到每个壳体的相对侧，并且每个散热构件具有大量的翅片。 使用包括框架，撑杆和固定构件的保持器来固定保持器。

公开(公告)号：US20090229758A1

公开(公告)日：2009-09-17

申请号：US12382328

申请日：2009-03-13

Applicant: Young-Min Min ,  Dae-Kyu Choi ,  Do-In Bae ,  Yun-Sik Yang ,  Wan-Goo Hwang ,  Jin-Man Kim

Inventor： Young-Min Min ,  Dae-Kyu Choi ,  Do-In Bae ,  Yun-Sik Yang ,  Wan-Goo Hwang ,  Jin-Man Kim

IPC: H01L21/3065 ,  C09K13/00

CPC classification number: H01L21/31116 ,  H01J37/321 ,  H01J37/32357 ,  Y02C20/30 ,  Y02P70/605

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

公开(公告)号：US07813542B2

公开(公告)日：2010-10-12

申请号：US11641870

申请日：2006-12-20

Applicant: Heok-Jae Lee ,  Sang-Ho Kim ,  Hyu-Rim Park ,  Do-In Bae ,  Kee-Weone Seo ,  Chang-Woo Woo

Inventor： Heok-Jae Lee ,  Sang-Ho Kim ,  Hyu-Rim Park ,  Do-In Bae ,  Kee-Weone Seo ,  Chang-Woo Woo

IPC: G06K9/00 ,  G06K9/68 ,  H04N7/18

CPC classification number: H01L21/681 ,  G06T7/33 ,  G06T7/74 ,  G06T2207/30148 ,  Y10S414/136

Abstract: Embodiments of the invention provide a wafer aligning apparatus and a wafer aligning method. In one embodiment, the wafer aligning apparatus comprises an imaging unit adapted to take an image of a wafer being transferred from a load lock chamber to a transfer chamber and adapted to convert the image into digital signals, and a signal processing unit adapted to calculate a center alignment correction value for the wafer by comparing the digital signals to a master image stored in the signal processing unit. The wafer aligning apparatus further comprises a robot controller adapted to receive the center alignment correction value from the signal processing unit and adapted to control a transfer robot in accordance with the center alignment correction value to provide the wafer to a process chamber such that the center of the wafer is substantially aligned.

Abstract translation: 本发明的实施例提供一种晶片对准装置和一种晶圆对准方法。 在一个实施例中，晶片对准装置包括成像单元，其适于将从负载锁定室传送的晶片的图像转移到传送室，并适于将图像转换成数字信号，以及信号处理单元， 通过将数字信号与存储在信号处理单元中的主图像进行比较来获得晶片的中心对准校正值。 晶片对准装置还包括机器人控制器，其适于从信号处理单元接收中心对准校正值，并且适于根据中心对准校正值来控制传送机器人，以将晶片提供给处理室，使得处理室的中心 晶片基本对齐。

公开(公告)号：US07812320B2

公开(公告)日：2010-10-12

申请号：US11521534

申请日：2006-09-15

Applicant: Su-han Yun ,  Jong-hyun Yang ,  Do-in Bae ,  Seong-gu Kim

Inventor： Su-han Yun ,  Jong-hyun Yang ,  Do-in Bae ,  Seong-gu Kim

IPC: H01J27/00

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/31701

Abstract: An ion source element, an ion implanter having the ion source element and a method of modifying the ion source element are provided. In the ion source element, a chamber may have a cavity divided into a plurality of inner sections configured substantially perpendicularly to an axis defined through centers of ends of the cavity. The larger inner sections may be at, or near, a center of the cavity and become smaller toward the ends of the cavity. A filament may be disposed at one end of the chamber to emit thermal electrons. A repeller may extend into the chamber through the other end of the chamber. An inlet may be formed in a first cavity wall to introduce gas having a dopant species into the chamber. A beam slit may be formed in a second cavity wall, opposite the inlet, of the chamber to extract an ionized species of the gas from the chamber.

Abstract translation: 提供离子源元件，具有离子源元素的离子注入机和修改离子源元件的方法。 在离子源元件中，腔室可以具有被分成多个内部部分的空腔，该多个内部部分基本上垂直于通过腔的端部中心限定的轴线。 更大的内部部分可以在空腔的中心处或附近，并且朝向空腔的端部变小。 灯丝可以设置在室的一端以发射热电子。 排斥器可以通过腔室的另一端延伸到腔室中。 入口可以形成在第一空腔壁中以将具有掺杂剂物质的气体引入室中。 可以在室的与入口相对的第二空腔壁中形成梁狭缝，以从室提取气体的离子化物质。

公开(公告)号：US07193369B2

公开(公告)日：2007-03-20

申请号：US10368344

申请日：2003-02-20

Applicant: Young-Min Min ,  Dae-Kyu Choi ,  Do-In Bae ,  Yun-Sik Yang ,  Wan-Goo Hwang ,  Jin-Man Kim

Inventor： Young-Min Min ,  Dae-Kyu Choi ,  Do-In Bae ,  Yun-Sik Yang ,  Wan-Goo Hwang ,  Jin-Man Kim

IPC: H01J7/24

CPC classification number: H01L21/31116 ,  H01J37/321 ,  H01J37/32357 ,  Y02C20/30 ,  Y02P70/605

Abstract: A method for generating a plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. For example, a gas is flowed through a pipe in a first direction. Electricity is conducted through the pipe in substantially the first direction. And a magnetic field is applied along a second direction (e.g., perpendicular to the first direction) to the gas flowing in the pipe such that a plasma is induced in the pipe.

Abstract translation: 一种用于产生等离子体的方法。 气体沿着与主磁场的磁力线相同位移的流路流动，向气体施加高频交流电流，从而产生气体等离子体。 例如，气体沿第一方向流过管道。 电力沿着第一方向大致沿管道传导。 并且沿着在管中流动的气体沿着第二方向（例如，垂直于第一方向）施加磁场，使得在管中感应出等离子体。

公开(公告)号：US20060169411A1

公开(公告)日：2006-08-03

申请号：US11327408

申请日：2006-01-09

Applicant: Jung-Hun Han ,  Jin-Jun Park ,  Do-In Bae

Inventor： Jung-Hun Han ,  Jin-Jun Park ,  Do-In Bae

IPC: H01L21/306

CPC classification number: C23C16/4412

Abstract: An apparatus for catching byproducts in semiconductor device processing equipment is disposed in an exhaust line between a process chamber and a vacuum pump. The apparatus includes a cylindrical trap housing member, an upper cover and a lower cover covering the upper part and lower part of the trap housing, respectively, a heater disposed under the upper cover, first and second cooling plates disposed in the trap housing, a post spacing the cooling plates, apart and a cooling system for cooling respective portions of the apparatus. The cooling system includes a delivery pipe for supplying refrigerant, a discharge pipe for discharging the refrigerant from the apparatus, first cooling piping extending through each cooling plate and connected to the delivery and discharge pipes, and second cooling piping extending helically along the outer circumferential surface of the trap housing.

公开(公告)号：US06833621B2

公开(公告)日：2004-12-21

申请号：US10315230

申请日：2002-12-10

Applicant: Tae-Won Lee ,  Do-In Bae ,  Guk-Kwang Kim ,  Wan-Goo Hwang ,  Jaung-Joo Kim

Inventor： Tae-Won Lee ,  Do-In Bae ,  Guk-Kwang Kim ,  Wan-Goo Hwang ,  Jaung-Joo Kim

IPC: H01L2352

CPC classification number: F16J15/0806 ,  F05C2201/021 ,  F05C2201/0412 ,  F05C2201/0475

Abstract: A metal gasket for a semiconductor fabrication chamber capable of preventing base plate metal contamination in the chamber, wherein the metal gasket includes a diffusion barrier layer interposed between a base plate and an anti-corrosive coating layer, and wherein the diffusion barrier layer prevents elements of the base plate from being diffused to the anti-corrosive coating layer. Accordingly, the diffusion barrier layer prevents attack on the anti-corrosive coating layer.

Abstract translation: 一种用于半导体制造室的金属衬垫，能够防止腔室中的底板金属污染，其中金属衬垫包括介于基板和防腐蚀涂层之间的扩散阻挡层，并且其中扩散阻挡层防止 基板被扩散到防腐蚀涂层。 因此，扩散阻挡层防止对防腐蚀涂层的侵蚀。