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公开(公告)号:US20180231809A1
公开(公告)日:2018-08-16
申请号:US15751714
申请日:2015-08-11
Inventor: Kenichiro Yashiki , Yasuyuki Suzuki
IPC: G02F1/035 , G02F1/03 , G02F1/01 , H04B10/516
CPC classification number: G02F1/0356 , G02F1/011 , G02F1/0121 , G02F1/025 , G02F1/0327 , G02F2201/12 , H04B10/516
Abstract: The purpose of the present invention is to allow a silicon photonics modulator to be operated at high speed with high frequency by providing an electrode structure for the small multichannel high-density silicon photonics modulator. This electrode structure for a silicon photonics modulator includes, on the planar surface of a silicon substrate, a first layer for forming a plurality of bias electrical wirings, and a second layer formed by aligning each of a plurality of ground electrode portions and each electrical wiring in the first layer.
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公开(公告)号:US10025031B2
公开(公告)日:2018-07-17
申请号:US15569020
申请日:2016-03-07
Inventor: Masatoshi Tokushima , Jun Ushida
Abstract: A grating structure for a grating coupler is provided which has a high efficiency resulting from the operating principle, is easily manufactured, and simultaneously has little reflection loss. This grating structure is provided with a core layer having periodic recesses and protrusions formed on the upper surface, a first upper cladding layer in contact with the upper surface of the core layer, a second upper cladding layer in contact with the upper surface of the first upper cladding layer, and a first lower cladding layer in contact with the lower surface of the core layer. The recessed portions of said recesses and protrusions are filled with the same material as the first upper cladding layer. The refractive index of the material forming the core layer is greater than the refractive index of the materials forming the first upper cladding layer, the second upper cladding layer and the first lower cladding layer. The refractive index of the material of the first upper cladding layer is greater than the refractive index of the material of the second upper cladding layer. The thickness from the upper surface of the protruding portions of the recesses and protrusions to the upper surface of the first upper cladding layer is within the range obtained by subtracting ½ of the depth of the recesses and protrusions from ((2m1−1)/4±⅛) times (m1 being a positive integer) the wavelength, in the material forming the first upper cladding layer, of light inputted and outputted by the grating coupler.
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公开(公告)号:US10001607B2
公开(公告)日:2018-06-19
申请号:US15643873
申请日:2017-07-07
Inventor: Tsuyoshi Aoki , Shigeaki Sekiguchi
IPC: G02B6/42
CPC classification number: G02B6/423 , G02B6/34 , G02B6/4214 , G02B6/4246 , G02B6/4249 , G02B6/4253 , G02B6/4256 , G02B6/4292
Abstract: An optical wiring module includes an optical wiring substrate on which an optical waveguide having a light input/output part is formed, and a fiber holder mounted on the optical wiring substrate, the fiber holder being configured to hold an optical fiber. The optical wiring substrate includes a hydrophobic film having an opening at a position corresponding to the light input/output part and a first adhesive layer disposed within the opening, and the optical fiber is optically coupled to the light input/output part via the first adhesive layer.
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公开(公告)号:US09985149B2
公开(公告)日:2018-05-29
申请号:US15244853
申请日:2016-08-23
Inventor: Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto , Tohru Mogami , Tsuyoshi Horikawa , Keizo Kinoshita
IPC: H01L31/0232 , H01L31/18 , G02B6/12 , G02B6/136 , G02B6/122
CPC classification number: H01L31/02327 , G02B6/12004 , G02B6/122 , G02B6/136 , G02B2006/12061 , G02B2006/12123 , H01L31/1808
Abstract: A performance of a semiconductor device is improved. In a method of manufacturing a semiconductor device, a first semiconductor portion and a second semiconductor portion made of silicon are formed on a base body via an insulation layer, and a third semiconductor portion including a semiconductor layer made of germanium is formed on the second semiconductor portion. Next, an insulation film is formed above the first semiconductor portion, an opening portion reaching the first semiconductor portion from an upper surface of the insulation film is formed, and a metal silicide layer is formed on a part of an upper surface of the first semiconductor portion exposed to the opening portion.
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公开(公告)号:US20180128975A1
公开(公告)日:2018-05-10
申请号:US15569020
申请日:2016-03-07
Inventor: Masatoshi Tokushima , Jun Ushida
Abstract: A grating structure for a grating coupler is provided which has a high efficiency resulting from the operating principle, is easily manufactured, and simultaneously has little reflection loss. This grating structure is provided with a core layer having periodic recesses and protrusions formed on the upper surface, a first upper cladding layer in contact with the upper surface of the core layer, a second upper cladding layer in contact with the upper surface of the first upper cladding layer, and a first lower cladding layer in contact with the lower surface of the core layer. The recessed portions of said recesses and protrusions are filled with the same material as the first upper cladding layer. The refractive index of the material forming the core layer is greater than the refractive index of the materials forming the first upper cladding layer, the second upper cladding layer and the first lower cladding layer. The refractive index of the material of the first upper cladding layer is greater than the refractive index of the material of the second upper cladding layer. The thickness from the upper surface of the protruding portions of the recesses and protrusions to the upper surface of the first upper cladding layer is within the range obtained by subtracting ½ of the depth of the recesses and protrusions from ((2m1−1)/4±⅛) times (m1 being a positive integer) the wavelength, in the material forming the first upper cladding layer, of light inputted and outputted by the grating coupler.
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公开(公告)号:US20180088275A1
公开(公告)日:2018-03-29
申请号:US15629312
申请日:2017-06-21
Inventor: Hideaki OKAYAMA
CPC classification number: G02B6/12007 , G02B6/1228 , G02B6/124 , G02B6/14 , G02F1/0147 , G02F1/025 , G02F2201/307 , G02F2203/055
Abstract: Provided is a wavelength filter including: an optical waveguide core that includes n (n is an integer greater than or equal to 2) number of mode conversion parts and n−1 number of cavity parts that are alternately connected to each other in series; and cladding that surrounds the optical waveguide core. The mode conversion parts convert light having a specific wavelength of a p-order mode (p is an integer satisfying p≧0) into light of a q-order mode (q is an integer satisfying q>p) and reflect the light. The cavity parts match phases of the light having the specific wavelength of the p-order mode propagating through the cavity part.
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公开(公告)号:US20180074349A1
公开(公告)日:2018-03-15
申请号:US15559911
申请日:2016-02-17
Inventor: Junichi FUJIKATA , Shigeki TAKAHASHI
IPC: G02F1/025
CPC classification number: G02F1/025 , G02F2001/0152 , G02F2201/063 , G02F2202/10
Abstract: An electro-optic device includes a first semiconductor layer including the rib-type waveguide, which includes a rib part and a first slab part, which extends in a first direction from the rib part; a dielectric layer, which is formed on the rib part; a second semiconductor layer, which extends in a second direction, which is opposite to the first direction, from an upper surface of the dielectric layer; a first high-concentration impurity region, which is formed in the first semiconductor layer to be in contact with the first slab part on the first direction side; and a second high-concentration impurity region, which is formed in a region of the second semiconductor layer on the second direction side. The second high-concentration impurity region is formed in a region other than a region overlapping the first semiconductor layer in a lamination direction.
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公开(公告)号:US09897761B2
公开(公告)日:2018-02-20
申请号:US15444523
申请日:2017-02-28
Inventor: Tomoyuki Akiyama , Tsuyoshi Aoki
IPC: G02B6/30
CPC classification number: G02B6/305
Abstract: The invention relates to an optical fiber mounted photonic integrated circuit device where the tolerance in the positioning of the coupling between a single mode optical fiber and an optical waveguide provided in the photonic integrated circuit device is increased. A second optical waveguide of which the cross-section of the core is in the form of a slab having a width that is greater than the mode diameter of the single mode optical fiber, and which is tapered in such a manner that the thickness of the core is reduced as the location is closer to the connection portion with the single mode optical fiber, is provided on the input/output end side of the first optical waveguide through which light propagates in such a manner that the inclined connection end surface of the single mode optical fiber is coupled to the upper surface of the second optical waveguide.
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公开(公告)号:US20170345952A1
公开(公告)日:2017-11-30
申请号:US15536533
申请日:2015-12-16
Inventor: Kenichiro Yashiki , Jun Ushida , Masatoshi Tokushima , Kazuhiko Kurata
IPC: H01L31/0232 , G02B6/12 , H01L31/107
Abstract: Provided is a light receiving element with high light receiving sensitivity.The light receiving element comprises: a light absorbing layer that absorbs light to generate a carrier; and a diffraction element that converts the optical path of first polarized light, which is obliquely incident on a plane formed by the light absorbing layer, so that the first polarized light propagates in a first direction along the light absorbing layer, and that converts the optical path of second polarized light incident from the same direction as the first polarized light so that the second polarized light propagates in a second direction, opposite the first direction, along the light absorbing layer.
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公开(公告)号:US09829726B2
公开(公告)日:2017-11-28
申请号:US14345316
申请日:2014-02-20
Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION
Inventor: Toshihiro Kamei , Ryohei Takei , Masahiko Mori , Youichi Sakakibara , Junichi Fujikata
CPC classification number: G02F1/025 , G02F2001/0151 , G02F2202/103 , G02F2202/105
Abstract: An electro-optical modulator includes a substrate 201; an optical waveguide formed of a silicon-containing i-type amorphous semiconductor 204 on the substrate; and a silicon-containing p-type semiconductor layer 203 and a silicon-containing n-type semiconductor layer 205 arranged apart from each other with the silicon-containing optical waveguide formed of an i-type amorphous semiconductor 204 interposed therebetween and constituting optical waveguides together with the silicon-containing optical waveguide formed of an i-type amorphous semiconductor. The silicon-containing p-type semiconductor layer 203 and/or silicon-containing n-type semiconductor layer 205 area crystalline semiconductor layer.
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