PHOTONIC QUANTUM RING LASER AND FABRICATION METHOD THEREOF
    14.
    发明申请
    PHOTONIC QUANTUM RING LASER AND FABRICATION METHOD THEREOF 审中-公开
    光子量子激光器及其制造方法

    公开(公告)号:US20100265977A1

    公开(公告)日:2010-10-21

    申请号:US12743025

    申请日:2008-10-16

    Abstract: A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwitched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, an upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

    Abstract translation: 光子量子环(PQR)激光器包括具有多量子阱(MQW)结构和蚀刻的侧面的有源层。 有源层被形成为在设置在支撑衬底上的反射器上外延生长的p-GaN和n-GaN层之间进行开槽。 在有源层的侧面的外侧形成有涂层,上部电极与n-GaN层的上部电连接,在n-GaN层上形成分布式布拉格反射体(DBR) 和上电极。 因此,PQR激光器能够振荡适用于低功率显示装置的省电垂直显示3D多模激光器,防止光斑现象,并产生聚焦调整的3D软光。

    Thin-film capacitor, laminated structure and methods of manufacturing the same
    15.
    发明申请
    Thin-film capacitor, laminated structure and methods of manufacturing the same 审中-公开
    薄膜电容器,层压结构及其制造方法

    公开(公告)号:US20080307620A1

    公开(公告)日:2008-12-18

    申请号:US12213366

    申请日:2008-06-18

    Abstract: Disclosed are an embedded capacitor and a printed circuit board including the same that can minimize the oxidization of a metal layer. A thin-film capacitor can include a first metal electrode film; a barrier layer, formed on the first metal electrode film to include a conductive oxide; a dielectric film, formed on the barrier layer; and a second metal electrode film, formed on the dielectric film. With the present invention, the outstanding characteristic of a ferroelectric thin film can be provided by minimizing the oxidization of a copper film in the heat treatment after forming the ferroelectric thin film on the copper film.

    Abstract translation: 公开了一种嵌入式电容器和包括能够最小化金属层的氧化的印刷电​​路板。 薄膜电容器可以包括第一金属电极膜; 阻挡层,形成在所述第一金属电极膜上,以包括导电氧化物; 形成在阻挡层上的电介质膜; 以及形成在电介质膜上的第二金属电极膜。 通过本发明,可以通过在铜膜上形成铁电薄膜后的热处理中使铜膜的氧化最小化来提供铁电薄膜的突出特性。

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