公开(公告)号：US20130207098A1

公开(公告)日：2013-08-15

申请号：US13371198

申请日：2012-02-10

Applicant: Tung-Ti YEH ,  Chung-Yi HUANG ,  Ya Wen WU ,  Hui-Mei JAO ,  Ting-Chun WANG ,  Shiu-Ko JiangJian ,  Chia-Hung CHUNG

Inventor： Tung-Ti YEH ,  Chung-Yi HUANG ,  Ya Wen WU ,  Hui-Mei JAO ,  Ting-Chun WANG ,  Shiu-Ko JiangJian ,  Chia-Hung CHUNG

IPC: H01L29/12

CPC classification number: H01L21/2007 ,  H01L21/67092 ,  H01L27/1464

Abstract: A semiconductor device including a first wafer assembly having a first substrate and a first oxide layer over the first substrate. The semiconductor device further includes a second wafer assembly having a second substrate and a second oxide layer over the second substrate. The first oxide layer and the second oxide layer are bonded together by van der Waals bonds or covalent bonds. A method of bonding a first wafer assembly and a second wafer assembly including forming a first oxide layer over a first substrate. The method further includes forming a second oxide layer over a second wafer assembly. The method further includes forming van der Waals bonds or covalent bonds between the first oxide layer and the second oxide layer.

Abstract translation: 一种半导体器件，包括具有第一衬底和第一衬底上的第一氧化物层的第一晶片组件。 半导体器件还包括第二晶片组件，其具有第二衬底和在第二衬底上的第二氧化物层。 第一氧化物层和第二氧化物层通过范德华力键或共价键键合在一起。 一种接合第一晶片组件和第二晶片组件的方法，包括在第一衬底上形成第一氧化物层。 该方法还包括在第二晶片组件上形成第二氧化物层。 该方法还包括在第一氧化物层和第二氧化物层之间形成范德华氏键或共价键。

公开(公告)号：US20130154060A1

公开(公告)日：2013-06-20

申请号：US13328346

申请日：2011-12-16

Applicant: Tung-Ti YEH ,  Wu-Chang LIN ,  Chung-Yi HUANG ,  Ya Wen WU ,  Hui-Mei JAO ,  Ting-Chun WANG ,  Chia-Hung CHUNG

Inventor： Tung-Ti YEH ,  Wu-Chang LIN ,  Chung-Yi HUANG ,  Ya Wen WU ,  Hui-Mei JAO ,  Ting-Chun WANG ,  Chia-Hung CHUNG

IPC: H01L29/06 ,  H01L21/44

CPC classification number: H01L21/02087 ,  H01L21/76802 ,  H01L21/76883

Abstract: A wafer including a substrate, a dielectric layer over the substrate, and a conductive layer over the dielectric layer is disclosed. The substrate has a main portion. A periphery of the dielectric layer and the periphery of the main portion of the substrate are separated by a first distance. A periphery of the conductive layer and the periphery of the main portion of the substrate are separated by a second distance. The second distance ranges from about a value that is 0.5% of a diameter of the substrate less than the first distance to about a value that is 0.5% of the diameter greater than the first distance.

Abstract translation: 公开了一种包括衬底，在衬底上的电介质层和介电层上的导电层的晶片。 基板具有主要部分。 电介质层的周边和基板的主要部分的周边分开第一距离。 导电层的周边和基板的主要部分的周边分开第二距离。 所述第二距离的范围从小于所述第一距离的所述基板的直径的0.5％的值的大约为大于所述第一距离的直径的0.5％的值。

公开(公告)号：US07304728B2

公开(公告)日：2007-12-04

申请号：US10942554

申请日：2004-09-15

Applicant: Shih-Tzung Chang ,  Yu-Ku Lin ,  Shih-Ho Lin ,  Kei-Wei Chen ,  Ting-Chun Wang ,  Ching-Hwan Su ,  Ying-Lang Wang

Inventor： Shih-Tzung Chang ,  Yu-Ku Lin ,  Shih-Ho Lin ,  Kei-Wei Chen ,  Ting-Chun Wang ,  Ching-Hwan Su ,  Ying-Lang Wang

IPC: G01C1/00

CPC classification number: H01L22/34 ,  G01B21/042

Abstract: A novel test device and method for calibrating the alignment of a laser beam emitted from a laser metrology tool with respect to a target area on a substrate. The test device includes a laser-sensitive material having a calibration pattern that includes a target point. When the tool is properly adjusted, the laser beam strikes the target point and is released to production. If the laser beam misses the target point, the tool is re-adjusted and re-tested until the laser beam strikes the target point.

Abstract translation: 一种用于校准从激光计量工具发射的激光束相对于衬底上的目标区域的对准的新型测试装置和方法。 测试装置包括具有包括目标点的校准图案的激光敏感材料。 当工具被正确调整时，激光束撞击目标点并释放到生产中。 如果激光束错过目标点，则重新调整工具并重新测试直到激光束撞击目标点。

公开(公告)号：US06828226B1

公开(公告)日：2004-12-07

申请号：US10042573

申请日：2002-01-09

Applicant: Kei-Wei Chen ,  Kuo-Hsiu Wei ,  Yu-Kin Lin ,  Ting-Chun Wang ,  Ying-Lang Wang ,  Shih-Tzung Chang

Inventor： Kei-Wei Chen ,  Kuo-Hsiu Wei ,  Yu-Kin Lin ,  Ting-Chun Wang ,  Ying-Lang Wang ,  Shih-Tzung Chang

IPC: H01L214763

CPC classification number: H01L21/3212 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/7684

Abstract: For 0.18 micron technology, it is common practice to use silicon oxynitride as an anti-reflective layer for defining the via etch patterns. It has however been found that, using current technology, residual particles of oxynitride get left behind. The present invention solves this problem by subjecting the surface from which the silicon oxynitride was removed to a high pressure rinse of an aqueous solution that includes a surfactant such as tetramethyl ammonium hydroxide or isopropyl alcohol. These surfactants serve to modify the hydrophobic behavior of the silicon oxynitride particles so that they no longer cling to the surface.

Abstract translation: 对于0.18微米技术，通常的做法是使用氮氧化硅作为抗反射层来定义通孔蚀刻图案。 然而，已经发现，使用当前的技术，留下残留的氮氧化物颗粒。 本发明通过将去除了氮氧化硅的表面经受包括诸如四甲基氢氧化铵或异丙醇的表面活性剂的水溶液的高压冲洗来解决这个问题。 这些表面活性剂用于改变氮氧化硅颗粒的疏水性能，使得它们不再粘附到表面。

公开(公告)号：US06682605B2

公开(公告)日：2004-01-27

申请号：US10043017

申请日：2002-01-07

Applicant: Aaron Cheng ,  Ting-Chun Wang ,  Yu-Ku Lin ,  Chun-Chang Chen ,  Yi-Lang Wang

Inventor： Aaron Cheng ,  Ting-Chun Wang ,  Yu-Ku Lin ,  Chun-Chang Chen ,  Yi-Lang Wang

IPC: B08B302

CPC classification number: H01L21/67051 ,  B08B3/02 ,  H01L21/32134 ,  Y10S134/902

Abstract: An apparatus and a method for removing coating layers from the top of alignment marks on a wafer are described. The apparatus includes a cleaning chamber that is a cavity and a lid member suspended in the cavity, a wafer chuck that is rotatably mounted in the lid member for holding a wafer in an upside down position such that the alignment marks are facing downwardly, and at least two solvent dispensing arms mounted in an outer peripheral area of the lid member that are immediately adjacent to the chuck for dispensing a flow of solvent upwardly toward the active surface of the wafer when the wafer is held in a stationary position, each of the at least two solvent dispensing arms are positioned corresponding to a position of one of the alignment marks.

Abstract translation: 描述了从晶片上的对准标记的顶部去除涂层的设备和方法。 该装置包括一个作为空腔的清洁室和悬挂在空腔中的盖构件，可旋转地安装在盖构件中的晶片卡盘，用于将晶片保持在倒置位置，使得对准标记面向下，并且在 至少两个溶剂分配臂安装在盖构件的外周区域中，其紧邻卡盘，用于当晶片保持在静止位置时向上朝向晶片的有效表面分配溶剂流， 至少两个溶剂分配臂对应于一个对准标记的位置定位。

公开(公告)号：US06645825B1

公开(公告)日：2003-11-11

申请号：US09614554

申请日：2000-07-12

Applicant: Chin Kun Lan ,  Ting Chun Wang ,  Tong-Hua Kuan ,  Ying-Lang Wang

Inventor： Chin Kun Lan ,  Ting Chun Wang ,  Tong-Hua Kuan ,  Ying-Lang Wang

IPC: H01L2176

CPC classification number: H01L21/76229

Abstract: An improved and new process for fabricating a planarized structure of shallow trench isolation (STI) embedded in a silicon substrate has been developed. The planarizing method comprises a two-step CMP process in which the first CMP step comprises chemical-mechanical polishing of silicon oxide using a first polishing slurry which is selective to silicon oxide. The time of the second CMP step is determined by selecting an overpolish thickness based on the percentage of substrate area occupied by the trench. High manufacturing yield and superior planarity for silicon oxide STI are achieved.

Abstract translation: 已经开发了一种用于制造嵌入硅衬底中的浅沟槽隔离（STI）的平面化结构的改进和新工艺。 平面化方法包括两步CMP工艺，其中第一CMP步骤包括使用对氧化硅选择性的第一抛光浆料进行二氧化硅的化学机械抛光。 通过基于沟槽占据的衬底面积的百分比来选择过抛光厚度来确定第二CMP步骤的时间。 实现了高的制造成品率和优异的氧化硅STI平坦度。

公开(公告)号：US06626741B2

公开(公告)日：2003-09-30

申请号：US09910633

申请日：2001-07-20

Applicant: Ting-Chun Wang ,  Kei-Wei Chen ,  Shih-Tzung Chang ,  Yu-Ku Lin ,  Ying-Lang Wang

Inventor： Ting-Chun Wang ,  Kei-Wei Chen ,  Shih-Tzung Chang ,  Yu-Ku Lin ,  Ying-Lang Wang

IPC: B24B100

CPC classification number: B24B57/02 ,  B24B37/042

Abstract: A method for improving thickness uniformity on a semiconductor wafer during a chemical mechanical polishing process capable of eliminating a wafer edge collapsing defect is described. In the method, slurry solution is removed from a peripheral edge portion of less than 10 mm wide on the surface of the polishing pad such that a concentration of the slurry can be effectively reduced in the peripheral region. The reduced slurry solution leads to a reduction in the removal rate on the wafer surface. The removal of slurry from the peripheral region can further be achieved by a mechanical means. A suitable width of the peripheral region of the polishing pad to be sprayed by an edge sprayer is less than 10 mm, and preferably between about 3 mm and about 5 mm. A suitable solvent to be sprayed is deionized water.

公开(公告)号：US20120326312A1

公开(公告)日：2012-12-27

申请号：US13167857

申请日：2011-06-24

Applicant: Shiu-Ko JangJian ,  Ting-Chun Wang ,  Szu-An Wu

Inventor： Shiu-Ko JangJian ,  Ting-Chun Wang ,  Szu-An Wu

IPC: H01L21/28 ,  H01L23/48 ,  B82Y40/00

CPC classification number: H01L23/4827 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/50 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.

Abstract translation: 一种方法包括在电介质层中形成开口，并且在介电层的表面上形成富硅层。 富硅层的一部分延伸到开口中并与电介质层接触。 在富含硅层上方形成含钽层。 进行退火以使含钽层与富硅层反应，从而形成含钽和硅的层。

公开(公告)号：US20090193152A1

公开(公告)日：2009-07-30

申请号：US12264233

申请日：2008-11-03

Applicant: Ting-Chun Wang ,  Jui-Chu Peng ,  Kuo-Pin Chiou

Inventor： Ting-Chun Wang ,  Jui-Chu Peng ,  Kuo-Pin Chiou

IPC: G06F3/00

CPC classification number: G06F13/102 ,  G06F9/4413

Abstract: An external device includes a controller, a connector, a function circuit, and a storage device. The storage device stores firmware and an image file. The image file includes an installation program and a driver. The external device is coupled to a host via the connector. The firmware can drive the controller to generate a virtual optical disc drive in the host and load the image file to the virtual optical disc drive so as to start the installation program. When the host does not have the driver, the installation program can install the driver in the host. When the host has the driver, the host can drive the function circuit to work.

Abstract translation: 外部设备包括控制器，连接器，功能电路和存储设备。 存储设备存储固件和图像文件。 图像文件包括安装程序和驱动程序。 外部设备经由连接器耦合到主机。 固件可以驱动控制器在主机中生成虚拟光盘驱动器，并将映像文件加载到虚拟光盘驱动器，以启动安装程序。 当主机没有驱动程序时，安装程​​序可以将驱动程序安装在主机中。 当主机有驱动程序时，主机可以驱动功能电路工作。

公开(公告)号：US06863491B2

公开(公告)日：2005-03-08

申请号：US10339691

申请日：2003-01-08

Applicant: Hsi-Kuei Cheng ,  Chun-Tse Lin ,  Ting-Chun Wang ,  Yu-Ku Lin ,  Ying-Lang Wang

Inventor： Hsi-Kuei Cheng ,  Chun-Tse Lin ,  Ting-Chun Wang ,  Yu-Ku Lin ,  Ying-Lang Wang

IPC: H01L21/687 ,  B23B31/16

CPC classification number: H01L21/68707 ,  Y10T279/1033 ,  Y10T279/1291 ,  Y10T279/19

Abstract: A new and improved wafer support for supporting wafers in a process chamber such as an edge bead removal (EBR) chamber. The wafer support comprises multiple wafer support units each including a gripper block that engages an edge portion or bevel of the wafer. The gripper block is attached to an engaging and disengaging mechanism for selectively causing engagement of the gripper blocks with the wafer to support the wafer and disengagement of the gripper blocks from the wafer to release the wafer for removal of the wafer from the chamber. The gripper blocks contact little or none of the surface area on the patterned surface of the wafer to prevent or substantially reduce the formation of contact-induced defects on the wafer.

Abstract translation: 一种新的和改进的晶片支撑件，用于在诸如边缘珠去除（EBR）室的处理室中支撑晶片。 晶片支撑件包括多个晶片支撑单元，每个晶片支撑单元包括接合晶片的边缘部分或斜面的夹持块。 夹持块附接到接合和分离机构，用于选择性地使夹持器块与晶片接合以支撑晶片，并且将夹持器块与晶片分离，以释放晶片以从晶片移除。 夹持器块几乎不接触晶片的图案化表面上的表面积，以防止或基本上减少晶片上接触引起的缺陷的形成。