公开(公告)号：US08242576B2

公开(公告)日：2012-08-14

申请号：US11186581

申请日：2005-07-21

Applicant: Jian-Hong Lin ,  Kang-Cheng Lin ,  Tzu-Li Lee

Inventor： Jian-Hong Lin ,  Kang-Cheng Lin ,  Tzu-Li Lee

IPC: H01L23/52

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure prevents energy that is used to blow a fuse from causing damage. The semiconductor structure includes a device, guard ring, and at least one protection layer. The device is constructed on the semiconductor substrate underneath the fuse. The seal ring, which surrounds the fuse, is constructed on at least one metal layer between the device and the fuse for confining the energy therein. The protection layer is formed within the seal ring, on at least one metal layer between the device and the fuse for shielding the device from being directly exposed to the energy.

Abstract translation: 半导体结构防止用于熔断保险丝的能量造成损坏。 半导体结构包括器件，保护环和至少一个保护层。 该器件构造在保险丝下方的半导体衬底上。 围绕熔丝的密封环构造在设备和保险丝之间的至少一个金属层上，以将能量限制在其中。 保护层形成在密封环内，在设备和保险丝之间的至少一个金属层上，用于屏蔽器件不会直接暴露于能量。

公开(公告)号：US20120002375A1

公开(公告)日：2012-01-05

申请号：US12827742

申请日：2010-06-30

Applicant: Jian-Hong LIN ,  Chin Chuan PENG ,  Tzu-Li LEE ,  Bi-Ling LIN ,  Bor-Jou WEI ,  Chien Shih TSAI

Inventor： Jian-Hong LIN ,  Chin Chuan PENG ,  Tzu-Li LEE ,  Bi-Ling LIN ,  Bor-Jou WEI ,  Chien Shih TSAI

IPC: H05K7/20 ,  H01L21/02

CPC classification number: H01L28/20 ,  H01L23/3677 ,  H01L23/5228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure for dissipating heat away from a resistor having neighboring devices and interconnects. The semiconductor structure includes a semiconductor substrate, a resistor disposed above the semiconductor substrate, and a thermal protection structure disposed above the resistor. The thermal protection structure has a plurality of heat dissipating elements, the heat dissipating elements having one end disposed in thermal conductive contact with the thermal protection structure and the other end in thermal conductive contact with the semiconductor substrate. The thermal protection structure receives the heat generated from the resistor and the heat dissipating elements dissipates the heat to the semiconductor substrate.

Abstract translation: 一种半导体结构，用于从具有相邻器件和互连的电阻器散热。 半导体结构包括半导体衬底，设置在半导体衬底之上的电阻器和设置在电阻器上方的热保护结构。 热保护结构具有多个散热元件，散热元件的一端设置成与热保护结构导热接触，另一端与半导体衬底导热接触。 热保护结构接收从电阻器产生的热量，并且散热元件将热量散发到半导体衬底。

公开(公告)号：US07998873B2

公开(公告)日：2011-08-16

申请号：US11764053

申请日：2007-06-15

Applicant: Chih-Hao Chen ,  Chia-Cheng Chou ,  Ming-Chung Liang ,  Keng-Chu Lin ,  Tzu-Li Lee

Inventor： Chih-Hao Chen ,  Chia-Cheng Chou ,  Ming-Chung Liang ,  Keng-Chu Lin ,  Tzu-Li Lee

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/76814 ,  H01L21/02063 ,  H01L21/31138

Abstract: A system and method for improving the performance of an integrated circuit by lowering RC delay time is provided. A preferred embodiment comprises adding a reactive etch gas to the ash/flush plasma process following a low-k dielectric etch. The illustrative embodiments implement a removal of the damage layer that is formed during a low-k dielectric etch.

Abstract translation: 提供了一种通过降低RC延迟时间来提高集成电路性能的系统和方法。 优选的实施方案包括在低k电介质蚀刻之后向灰/冲击等离子体工艺中添加反应性蚀刻气体。 说明性实施例实现了在低k电介质蚀刻期间形成的损伤层的去除。

公开(公告)号：US20080014741A1

公开(公告)日：2008-01-17

申请号：US11487741

申请日：2006-07-17

Applicant: Hsien-Wei Chen ,  Jian-Hong Lin ,  Tzu-Li Lee

Inventor： Hsien-Wei Chen ,  Jian-Hong Lin ,  Tzu-Li Lee

IPC: H01L21/4763

CPC classification number: H01L21/7682 ,  H01L21/76828 ,  H01L21/76829 ,  H01L2221/1047

Abstract: An interconnect structure of an integrated circuit having improved reliability and a method for forming the same are provided. The method includes providing a substrate, forming a dielectric layer overlying the substrate, performing a first shrinking process, wherein the dielectric layer shrinks and has a first shrinkage rate, forming a conductive feature in the dielectric layer after the step of performing the first shrinking process, and performing a second shrinking process after the step of forming the conductive feature, wherein the dielectric layer substantially shrinks and has a second shrinkage rate.

Abstract translation: 提供了具有改善的可靠性的集成电路的互连结构及其形成方法。 该方法包括提供衬底，形成覆盖在衬底上的电介质层，执行第一收缩过程，其中电介质层收缩并具有第一收缩率，在执行第一收缩过程的步骤之后在介电层中形成导电特征 并且在形成导电特征的步骤之后执行第二收缩过程，其中介电层基本上收缩并且具有第二收缩率。

公开(公告)号：US20070018279A1

公开(公告)日：2007-01-25

申请号：US11186581

申请日：2005-07-21

Applicant: Jian-Hong Lin ,  Kang-Cheng Lin ,  Tzu-Li Lee

Inventor： Jian-Hong Lin ,  Kang-Cheng Lin ,  Tzu-Li Lee

IPC: H01L29/00

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure prevents energy that is used to blow a fuse from causing damage. The semiconductor structure includes a device, guard ring, and at least one protection layer. The device is constructed on the semiconductor substrate underneath the fuse. The seal ring, which surrounds the fuse, is constructed on at least one metal layer between the device and the fuse for confining the energy therein. The protection layer is formed within the seal ring, on at least one metal layer between the device and the fuse for shielding the device from being directly exposed to the energy.

Abstract translation: 半导体结构防止用于熔断保险丝的能量造成损坏。 半导体结构包括器件，保护环和至少一个保护层。 该器件构造在保险丝下方的半导体衬底上。 围绕熔丝的密封环构造在设备和保险丝之间的至少一个金属层上，以将能量限制在其中。 保护层形成在密封环内，在设备和保险丝之间的至少一个金属层上，用于屏蔽器件不会直接暴露于能量。