公开(公告)号：US20240267002A1

公开(公告)日：2024-08-08

申请号：US18262527

申请日：2023-01-13

Applicant: University of Electronic Science and Technology of China

Inventor： Yiming YU ,  Kai KANG ,  Chenxi ZHAO ,  Huihua LIU ,  Yunqiu WU

IPC: H03D7/14 ,  H04B1/00

CPC classification number: H03D7/1458 ,  H03D7/1441 ,  H04B1/005

Abstract: The present invention belongs to the technical field of 5G millimeter wave communication and discloses a 5G dual-band up-mixer with switching between amplification function and frequency mixing function, and terminal. The first double-balanced active mixer and the second double-balanced active mixer are connected in series, and both ends of the first double-balanced active mixer are connected with a first transformer and a second transformer respectively; both ends of the second double-balanced active mixer are respectively connected with the second transformer and the third transformer; the first double-balanced active mixer is provided with a first MOSFET and a fourth transformer connected with the first MOSFET; the second double-balanced active mixer is provided with a second MOSFET and a fifth transformer connected with the second MOSFET.

公开(公告)号：US12056841B2

公开(公告)日：2024-08-06

申请号：US17450692

申请日：2021-10-13

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Zhen Qin ,  Yi Ding ,  Tianming Zhuang ,  Fuhu Deng ,  Zhiguang Qin

IPC: G06T3/00 ,  G06N3/045 ,  G06T7/11

CPC classification number: G06T3/00 ,  G06N3/045 ,  G06T7/11

Abstract: A generative adversarial network used for image shape transformation. The image shape transformation includes generating a segmentation mask of an image to be transformed and constructing a generator and a discriminator. The image shape transformation further includes constructing the generative adversarial network through the generator and the discriminator, constructing a loss function, training the generative adversarial network by a gradient descent method according to the loss function, and inputting the segmentation mask of the image to be transformed into the trained generative adversarial network to obtain an image shape transformation result.

公开(公告)号：US12027976B2

公开(公告)日：2024-07-02

申请号：US17683572

申请日：2022-03-01

Applicant: University of Electronic Science and Technology of China

Inventor： Hua Fan ,  Yilin Liu ,  Huichao Yue ,  Kai Xu ,  Quanyuan Feng ,  Huaying Su ,  Guosong Wang

IPC: H02M3/158 ,  H02M1/00 ,  H02M1/08

CPC classification number: H02M3/158 ,  H02M1/0009 ,  H02M1/08

Abstract: A DC-DC converter circuit with selectable working modes is disclosed. Compared with the traditional chip that works in one mode, the DC-DC converter with selectable working modes adds only a mode selection circuit, so that the chip can work in voltage control mode or current control mode. On the one hand, the applications of the chip are more extensive, and on the other hand, when the applications are different, the cost of developing a DC-DC converter with selectable working mode is greatly reduced compared with the traditional DC-DC converter.

公开(公告)号：US12027577B2

公开(公告)日：2024-07-02

申请号：US17351267

申请日：2021-06-18

Applicant: University of Electronic Science and Technology of China

Inventor： Ming Qiao ,  Shuhao Zhang ,  Zhangyi'an Yuan ,  Dican Hou ,  Bo Zhang

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/063 ,  H01L29/0878 ,  H01L29/66681 ,  H01L29/7816

Abstract: A lateral power semiconductor device includes a first type doping substrate at a bottom of the lateral power semiconductor device, a second type doping drift region, a second type heavy doping drain, a first type doping body; a first type heavy doping body contact and a second type heavy doping source, where dielectric layers are on a right side of the second type heavy doping source; the dielectric layers are arranged at intervals in a longitudinal direction in the first type doping body, and between adjacent dielectric layers in the longitudinal direction is the first type doping body; and a polysilicon is surrounded by the dielectric layer at least on a right side. Compared with conventional trench devices, the lateral power semiconductor device introduces a lateral channel, to increase a current density, thereby realizing a smaller channel on-resistance.

公开(公告)号：US20240194874A1

公开(公告)日：2024-06-13

申请号：US18387238

申请日：2023-11-06

Applicant: Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China

Inventor： Jingze LI ,  Zhicui SONG ,  Zihao WANG ,  Xiaohui LV ,  Jianxiong XING

IPC: H01M4/583 ,  H01M4/02 ,  H01M4/04 ,  H01M4/62 ,  H01M10/0525

CPC classification number: H01M4/583 ,  H01M4/0404 ,  H01M4/0423 ,  H01M4/0428 ,  H01M4/623 ,  H01M4/625 ,  H01M4/628 ,  H01M2004/021 ,  H01M2004/027 ,  H01M10/0525

Abstract: Disclosed is a negative electrode for a lithium/sodium ion battery and a preparation method therefor, belonging to the field of metal ion battery. The negative electrode includes an electron insulating modification layer and a conventional negative electrode for a lithium/sodium ion battery; the electron insulating modification layer is confinedly coated on the surface of the conventional negative electrode for the lithium/sodium ion battery, forming a porous thin film; and the conventional negative electrode for the lithium/sodium ion battery includes a metal current collector and a powder composite layer of negative electrode, including an active material, a conductive additive, and a binder.

公开(公告)号：US20240128504A1

公开(公告)日：2024-04-18

申请号：US18108863

申请日：2023-02-13

Applicant: YANGTZE DELTA REGION INSTITUTE OF UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, HUZHOU

Inventor： Mengqiang WU ,  Ziqiang Xu ,  Zixuan Fang ,  Xingwei Zhang

IPC: H01M10/0565 ,  C08F2/04 ,  C08F2/44

CPC classification number: H01M10/0565 ,  C08F2/04 ,  C08F2/44 ,  H01M2300/0082 ,  H01M2300/0085

Abstract: Disclosed is a method for preparing fast ionic conductors based on in-situ polymerization, which uses the spatial resistance volume effect to widen ion migration channels by copolymerizing high spatial resistance monomers with highly reactive crosslinkers, resulting in shorter ion transport paths and substantially higher ionic conductivity of in-situ solid-state polymer electrolytes; also, the high spatial resistance monomers and highly reactive crosslinkers synergistically construct a three-dimensional network structure with both high mechanical strength and stable electrode electrolyte interface properties.

公开(公告)号：US20240120526A1

公开(公告)日：2024-04-11

申请号：US18108911

申请日：2023-02-13

Applicant: YANGTZE DELTA REGION INSTITUTE OF UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, HUZHOU

Inventor： Mengqiang WU ,  Ziqiang XU ,  Zixuan FANG ,  Zhihao ZHANG

IPC: H01M10/056 ,  H01M4/36 ,  H01M4/38 ,  H01M4/58 ,  H01M4/62

CPC classification number: H01M10/056 ,  H01M4/366 ,  H01M4/382 ,  H01M4/5825 ,  H01M4/623 ,  H01M4/625 ,  H01M2004/028

Abstract: Disclosed is a method for improving an interface of composite solid electrolyte in situ relates to the field of composite solid electrolyte. By cooling and solidifying the first trans-crystalline solidified liquid, a first trans-gauche isomeric plastic crystal layer is constructed between the positive electrode and the composite solid electrolyte; by cooling and solidifying the second trans-crystalline solidified liquid, a second trans-gauche isomeric plastic crystal layer is constructed between the composite solid electrolyte and the negative electrode; the first trans-crystalline solidified liquid includes trans-gauche isomeric plastic crystals and lithium salt, and the second trans-crystalline solidified liquid includes trans-gauche isomeric plastic crystals, lithium salt and additives.

公开(公告)号：US20240112914A1

公开(公告)日：2024-04-04

申请号：US18121609

申请日：2023-03-15

Applicant: University of Electronic Science and Technology of China

Inventor： Bo ZHANG ,  Teng LIU ,  Wentong ZHANG ,  Nailong HE ,  Sen ZHANG ,  Ming QIAO ,  Zhaoji LI

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213

CPC classification number: H01L21/0337 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32055 ,  H01L21/32137 ,  H01L21/32139

Abstract: A new variable selective etching technology for thick SOI devices. An SOI material is etched by the following steps: (1) providing an SOI wafer; (2) depositing a composite hard mask with a variable selection ratio to replace a traditional hard mask with an invariable selection ratio; (3) applying a photoresist; (4) mask making, namely defining a to-be-etched region by using a photoetching plate; (5) etching the photoresist in the defined region; (6) etching the composite hard mask; (7) removing the photoresist; (8) etching top silicon by using a second etching method at a first selection ratio; and (9) etching a buried oxide layer by using a third etching method at a second selection ratio. The new variable selective etching technology avoids the damage to a side wall of a deep trench when the buried oxide layer is etched, and does not need to use an excessive thick hard mask.

公开(公告)号：US20240105925A1

公开(公告)日：2024-03-28

申请号：US18075517

申请日：2022-12-06

Applicant: YANGTZE DELTA REGION INSTITUTE OF UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, HUZHOU

Inventor： Ziqiang XU ,  Mengqiang WU ,  Zixuan FANG ,  Xingwei ZHANG

IPC: H01M4/40 ,  H01M4/62 ,  H01M10/0565

CPC classification number: H01M4/405 ,  H01M4/622 ,  H01M10/0565 ,  H01M2004/027

Abstract: According to the application, a double interphase layer strategy with self-healing function is constructed at an interphase between an in-situ solid-state electrolyte and a lithium metal by the synergistic effect of double Lewis acids, a first protective layer inhibits a side reaction of the lithium metal and the in-situ solid-state electrolyte, and a second protective layer self-heals defects of the double interphase layer. The application solves the problem of unstable interface between electrode and electrolyte of in-situ solid-state lithium metal battery, and obtains lithium metal battery with high energy density, high coulombic efficiency and ultra-long cycling life.

公开(公告)号：US11930649B2

公开(公告)日：2024-03-12

申请号：US17566600

申请日：2021-12-30

Applicant: University of Electronic Science and Technology of China

Inventor： Deen Gu ,  Xin Zhou ,  Yadong Jiang ,  Mengru Chen

IPC: H01L23/00 ,  H10K30/82 ,  H10K50/805 ,  H10K71/60 ,  H10K102/10

CPC classification number: H10K30/82 ,  H10K50/805 ,  H10K71/60 ,  H10K2102/101

Abstract: A transparent top electrode composite film for organic optoelectronic devices includes a substrate, an MoOx film layer coated on the substrate, a doped Ag-based film layer coated on the MoOx film layer and an HfOx film layer coated on the doped Ag-based film layer. A preparation method of the transparent top electrode composite film, which is achieved under vacuum and low temperature, includes steps of (A) depositing an MoOx film layer on a substrate through thermal evaporation process or electron beam evaporation process without heating the substrate; (B) depositing a doped Ag-based film layer on the MoOx film layer through sputtering process or evaporation process; and (C) depositing an HfOx film layer on the doped Ag-based film layer through reactive sputtering process, thereby obtaining the transparent top electrode composite film. The composite film is able to be used as a top electrode material for organic optoelectronic devices.