公开(公告)号：US09905416B2

公开(公告)日：2018-02-27

申请号：US15414485

申请日：2017-01-24

Applicant: ASM IP HOLDING B.V.

Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Suvi P. Haukka

IPC: H01L21/02 ,  H01L21/8234

CPC classification number: H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/823431

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

公开(公告)号：US20180033616A1

公开(公告)日：2018-02-01

申请号：US15222780

申请日：2016-07-28

Applicant: ASM IP Holding B.V.

Inventor： Zaitsu Masaru ,  Atsuki Fukazawa

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/762 ,  C23C16/50

CPC classification number: H01L21/02274 ,  C23C16/0245 ,  C23C16/045 ,  C23C16/30 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/76224

Abstract: According to the invention a method for filling one or more gaps created during manufacturing of a feature on a substrate is provided by providing the substrate in a reaction chamber and providing a deposition method. The deposition method comprises; providing an anisotropic plasma to bombard a bottom area of a surface of the one or more gaps with ions thereby creating adsorption sites at the bottom area; introducing a first reactant to the substrate; and, allowing the first reactant to react with the adsorption sites at the bottom area of the surface to fill the one or more gaps from the bottom area upwards.

公开(公告)号：US20140273477A1

公开(公告)日：2014-09-18

申请号：US14167904

申请日：2014-01-29

Applicant: ASM IP HOLDING B.V.

Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Suvi P. Haukka

IPC: H01L21/02

CPC classification number: H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/823431

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

公开(公告)号：US20130244446A1

公开(公告)日：2013-09-19

申请号：US13799708

申请日：2013-03-13

Applicant: ASM IP HOLDING B.V.

Inventor： Naoto Tsuji ,  Atsuki Fukazawa ,  Noboru Takamure ,  Suvi Haukka ,  Antti Juhani Niskanen ,  Hyung Sang Park

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/325 ,  C23C16/345 ,  C23C16/45534 ,  C23C16/4554 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/76829

Abstract: A method for forming a silicon-containing dielectric film on a substrate by atomic layer deposition (ALD) includes: providing two precursors, one precursor containing a halogen in its molecule, another precursor containing a silicon but no halogen in its molecule, adsorbing a first precursor, which is one of the two precursors onto a substrate to deposit a monolayer of the first precursor; adsorbing a second precursor, which is the other of the two precursors onto the monolayer of the first precursor to deposit a monolayer of the second precursor; and exposing the monolayer of the second precursor to radicals of a reactant to cause surface reaction with the radicals to form a compound monolayer of a silicon-containing film.

Abstract translation: 通过原子层沉积（ALD）在衬底上形成含硅电介质膜的方法包括：提供两个前体，在其分子中含有卤素的一种前体，在其分子中含有硅但不含卤素的另一种前体，吸附第一 前体，其是沉积单层第一前体的底物上的两种前体之一; 将作为所述两种前体中的另一种的第二前体吸附到所述第一前体的单层上以沉积所述第二前体的单层; 并将第二前体的单层暴露于反应物的自由基以引起与自由基的表面反应以形成含硅膜的化合物单层。

公开(公告)号：US11610774B2

公开(公告)日：2023-03-21

申请号：US17037481

申请日：2020-09-29

Applicant: ASM IP Holding B.V.

Inventor： Aurélie Kuroda ,  Atsuki Fukazawa

IPC: H01L21/02

Abstract: Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process are provided. The methods may include: forming a topographically selective silicon oxide film by a plasma enhanced atomic layer deposition (PEALD) process or a cyclical plasma-enhanced chemical vapor deposition (cyclical PECVD) process. The methods may also include: forming a silicon oxide film either selectivity over the horizontal surfaces of a non-planar substrate or selectively over the vertical surfaces of a non-planar substrate.

公开(公告)号：US11453943B2

公开(公告)日：2022-09-27

申请号：US15491726

申请日：2017-04-19

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/50 ,  C23C16/40 ,  C23C16/34

Abstract: An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ALD conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, —NR2, or —OR.

公开(公告)号：US20200321209A1

公开(公告)日：2020-10-08

申请号：US16904166

申请日：2020-06-17

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US10655221B2

公开(公告)日：2020-05-19

申请号：US15879209

申请日：2018-01-24

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: C23C16/455 ,  C23C16/40 ,  H01L21/02 ,  C23C16/04 ,  C23C16/44

Abstract: A method for depositing an oxide film on a substrate by thermal ALD and PEALD, includes: providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by thermal ALD in the reaction chamber; and without breaking a vacuum, continuously depositing a second oxide film on the first oxide film by PEALD in the reaction chamber.

公开(公告)号：US10179947B2

公开(公告)日：2019-01-15

申请号：US14090750

申请日：2013-11-26

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa

IPC: H05H1/00 ,  C23C16/34 ,  C23C16/455

Abstract: A method for forming a film on a patterned surface of a substrate by atomic layer deposition (ALD) processing includes: adsorbing onto a patterned surface a first precursor containing silicon or metal in its molecule; adsorbing onto the first-precursor-adsorbed surface a second precursor containing no silicon or metal in its molecule; exposing the second-precursor-adsorbed surface to an excited reactant to oxidize, nitride, or carbonize the precursors adsorbed on the surface of the substrate; and repeating the above cycle to form a film on the patterned surface of the substrate.

公开(公告)号：US20180151355A1

公开(公告)日：2018-05-31

申请号：US15787342

申请日：2017-10-18

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa

IPC: H01L21/02

CPC classification number: H01L21/02252 ,  H01L21/02118 ,  H01L21/02123 ,  H01L21/02208 ,  H01L21/0228

Abstract: Methods for depositing silicon-containing thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including one or more deposition cycles including contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods a deposition cycle can also including contacting the substrate with a carbon precursor.