公开(公告)号：US20210033977A1

公开(公告)日：2021-02-04

申请号：US16931275

申请日：2020-07-16

Applicant: ASM IP Holding B.V.

Inventor： Ivo Raaijmakers ,  Daniele Piumi ,  Ivan Zyulkov ,  David Kurt de Roest ,  Michael Eugene Givens

IPC: G03F7/16

Abstract: A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.

公开(公告)号：US20200064737A1

公开(公告)日：2020-02-27

申请号：US16546543

申请日：2019-08-21

Applicant: ASM IP Holding B.V.

Inventor： David Kurt de Roest

IPC: G03F7/16 ,  H01L21/027 ,  H01L21/67

Abstract: A substrate processing apparatus comprising a wet processing station with a resist coating device for coating a resist on a substrate and/or a development processing device for developing the resist on the substrate is disclosed. The apparatus may have an additional processing station and a substrate handler for moving the substrate to the wet, and/or additional processing station and moving the substrate in a direction in and/or out of the substrate processing apparatus. The additional processing station comprises an infiltration device.

公开(公告)号：US20250060671A1

公开(公告)日：2025-02-20

申请号：US18936501

申请日：2024-11-04

Applicant: ASM IP Holding B.V.

Inventor： Ivo Raaijmakers ,  Daniele Piumi ,  Ivan Zyulkov ,  David Kurt de Roest ,  Michael Eugene Givens

IPC: G03F7/16

Abstract: A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.

公开(公告)号：US11664219B2

公开(公告)日：2023-05-30

申请号：US17463813

申请日：2021-09-01

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  David Kurt de Roest ,  Oreste Madia

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0228 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31116

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

公开(公告)号：US20230059464A1

公开(公告)日：2023-02-23

申请号：US17818062

申请日：2022-08-08

Applicant: ASM IP Holding, B.V.

Inventor： Yoann Tomczak ,  Ivan Zyulkov ,  David Kurt de Roest ,  Michael Eugence Givens ,  Daniele Piumi ,  Charles Dezelah

IPC: H01L21/768 ,  H01L21/027 ,  G03F7/004 ,  G03F7/20

Abstract: Methods of forming patterned features on a surface of a substrate are disclosed. Exemplary methods include gas-phase formation of a layer comprising an oxalate compound on a surface of the substrate. Portions of the layer comprising the oxalate compound can be exposed to radiation or active species that form exposed and unexposed portions. Material can be selectively deposed onto the exposed or the unexposed portions.

公开(公告)号：US20210398797A1

公开(公告)日：2021-12-23

申请号：US17463813

申请日：2021-09-01

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  David Kurt de Roest ,  Oreste Madia

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

公开(公告)号：US20210296130A1

公开(公告)日：2021-09-23

申请号：US17340178

申请日：2021-06-07

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  David Kurt de Roest

IPC: H01L21/285 ,  H01L21/3065 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  C23C16/06 ,  C23C16/455 ,  H01L21/48 ,  C23C16/04 ,  H01L21/321 ,  C23C16/02 ,  C23C16/08

Abstract: A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US11022879B2

公开(公告)日：2021-06-01

申请号：US16167164

申请日：2018-10-22

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Krzysztof Kamil Kachel ,  David Kurt de Roest

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/16

Abstract: The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.

公开(公告)号：US20210071298A1

公开(公告)日：2021-03-11

申请号：US16952363

申请日：2020-11-19

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel ,  David Kurt de Roest ,  Bert Jongbloed ,  Dieter Pierreux

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/033 ,  C23C16/448 ,  C23C16/04 ,  C23C16/52 ,  C23C16/56

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.

公开(公告)号：US20250079155A1

公开(公告)日：2025-03-06

申请号：US18814784

申请日：2024-08-26

Applicant: ASM IP Holding B.V.

Inventor： Fatemeh Davodi ,  David Kurt de Roest

IPC: H01L21/02

Abstract: Methods, systems, and structures for lithography, in particular EUV lithography. Embodiments of structures disclosed herein comprise a hafnium oxide secondary electron generation layer which can advantageously reduce the dose requirement to fully develop EUV resist.