公开(公告)号：US11735422B2

公开(公告)日：2023-08-22

申请号：US17065925

申请日：2020-10-08

Applicant: ASM IP Holding B.V.

Inventor： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/02172 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3105

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US11644758B2

公开(公告)日：2023-05-09

申请号：US17375235

申请日：2021-07-14

Applicant: ASM IP Holding B.V.

Inventor： Daniele Piumi ,  David Kurt de Roest

IPC: G03F7/20 ,  H01L23/00

CPC classification number: G03F7/70783 ,  G03F7/70033 ,  H01L23/562

Abstract: Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

公开(公告)号：US20200013629A1

公开(公告)日：2020-01-09

申请号：US16468258

申请日：2017-12-08

Applicant: ASM IP Holding B.V.

Inventor： David Kurt de Roest ,  Werner Knaepen ,  Krzysztof Kachel

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/324

Abstract: An apparatus and a method for forming a structure within a semiconductor processing apparatus are disclosed. The apparatus includes a first reaction chamber, the first reaction chamber configured to hold at least one substrate having a first layer. The apparatus also includes a precursor delivery system configured to perform an infiltration by sequentially pulsing a first precursor and a second precursor on the substrate. The apparatus may also include a first removal system configured for removing at least a portion of the first layer disposed on the substrate while leaving an infiltrated material, wherein the infiltration and the removing at least a portion of the first layer take place within the same semiconductor processing apparatus. A method of forming a structure within a semiconductor processing apparatus is also disclosed, the method including providing a substrate for processing in a reaction chamber, the substrate having a first layer disposed on the substrate. The method may also include performing a first layer infiltration by sequentially pulsing a first precursor and a second precursor on the substrate, wherein an infiltrated material forms in the first layer from the reaction of the first precursor and the second precursor. The method may also include removing at least a portion of the first layer disposed on the substrate after performing the infiltration, wherein the infiltration and the removing at least a portion of the first layer take place with the same semiconductor processing apparatus.

公开(公告)号：US20190163056A1

公开(公告)日：2019-05-30

申请号：US16167164

申请日：2018-10-22

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Krzysztof Kamil Kachel ,  David Kurt de Roest

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/16

Abstract: The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.

公开(公告)号：US20240339321A1

公开(公告)日：2024-10-10

申请号：US18624866

申请日：2024-04-02

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Ikhlas Rahmat ,  Yoann Tomczak ,  Charles Dezelah ,  David Kurt de Roest

IPC: H01L21/027 ,  G03F7/004

CPC classification number: H01L21/0274 ,  G03F7/0042

Abstract: Structures, related methods, and related systems are disclosed. An embodiment of a structure comprises a resist and an inhibition layer. The EUV resist comprises exposed resist areas and unexposed resist areas. The inhibition layer inhibits the unexposed resist areas versus the exposed resist areas with respect to vapor phase deposition of a hard mask.

公开(公告)号：US20240274313A1

公开(公告)日：2024-08-15

申请号：US18431164

申请日：2024-02-02

Applicant: ASM IP Holding B.V.

Inventor： Fatemeh Davodi ,  Steaphan Wallace ,  Yoann Tomczak ,  David Kurt de Roest

IPC: G21K1/06 ,  G03F7/00 ,  G03F7/11 ,  H01J37/32

CPC classification number: G21K1/06 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/70033 ,  G03F7/7075 ,  H01J37/32146 ,  H01J2237/332

Abstract: Structures, related methods, and related systems for reducing EUV dose. A structure as described herein can comprise a substrate; an electron reflector layer overlying the substrate; and, an extreme ultraviolet (EUV) resist overlying an electron generation layer. The EUV resist is constructed and arranged for absorbing EUV radiation and generating secondary electrons. The electron reflector layer is constructed and arranged for reflecting secondary electrons generated by the EUV resist back towards the EUV resist.

公开(公告)号：US20230420256A1

公开(公告)日：2023-12-28

申请号：US18236051

申请日：2023-08-21

Applicant: ASM IP Holding B.V.

Inventor： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  H01L21/0332 ,  H01L21/0273 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/0228 ,  H01L21/02172 ,  H01L21/02205

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US20230324803A1

公开(公告)日：2023-10-12

申请号：US18131279

申请日：2023-04-05

Applicant: ASM IP Holding, B.V.

Inventor： Jan Deckers ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  David Kurt de Roest ,  Kishan Ashokbhai Patel ,  Yoann Tomczak

IPC: G03F7/16 ,  G03F7/075 ,  G03F7/40 ,  G03F7/004

CPC classification number: G03F7/167 ,  G03F7/0757 ,  G03F7/40 ,  G03F7/0042

Abstract: Gas-phase methods of forming radiation-sensitive, patternable material and systems for forming the material. Exemplary methods include gas-phase formation of a layer comprising a polymeric material that forms the radiation-sensitive, patternable material on a surface of the substrate. Portions of the layer comprising the polymeric material can be exposed to radiation or active species to form exposed and unexposed regions. Material can be selectively deposed onto the exposed or unexposed portions and/or one of the exposed and unexposed regions can be selectively removed. One or more method steps can be performed within a reaction chamber and/or a reactor system.

公开(公告)号：US20220019149A1

公开(公告)日：2022-01-20

申请号：US17375235

申请日：2021-07-14

Applicant: ASM IP Holding B.V.

Inventor： Daniele Piumi ,  David Kurt de Roest

IPC: G03F7/20 ,  H01L23/00

Abstract: Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

公开(公告)号：US11139163B2

公开(公告)日：2021-10-05

申请号：US17064865

申请日：2020-10-07

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  David Kurt de Roest ,  Oreste Madia

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.