公开(公告)号：US20250157952A1

公开(公告)日：2025-05-15

申请号：US18917894

申请日：2024-10-16

Applicant: ASM IP HOLDING B.V. ,  IMEC VZW

Inventor： Debanjan Jana ,  Yiting Sun ,  David De Roest ,  Daniele Piumi ,  Sara Paolillo ,  Philippe Bezard ,  Vincent Renaud

IPC: H01L23/64 ,  H01L21/02 ,  H01L21/311

Abstract: A method for forming an intermediate in the multiple patterning lithographic formation of a semiconductor device mask involves: 1) Providing a target layer; 2) Using EUV lithography to form mandrels on the target layer, with a pitch of less than 40 nm; 3) Depositing a conformal spacer material on the mandrels, narrowing the gaps between them; 4) Performing a directional etch to expose the top surface of the mandrels. The spacer material has a resistivity lower than 104 Ω·cm at 20° C.

公开(公告)号：US20210111025A1

公开(公告)日：2021-04-15

申请号：US17065925

申请日：2020-10-08

Applicant: ASM IP Holding B.V.

Inventor： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC: H01L21/033 ,  H01L21/027

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US20240201596A1

公开(公告)日：2024-06-20

申请号：US18528314

申请日：2023-12-04

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Yoann Tomczak ,  Charles Dezelah ,  Ivan Zyulkov ,  David Kurt De Roest ,  Michael Givens ,  Daniele Piumi

IPC: G03F7/16 ,  G03F7/004

CPC classification number: G03F7/167 ,  G03F7/0045 ,  G03F7/165

Abstract: Methods and related systems for forming an EUV sensitive film on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first deposition pulse and a second deposition pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises a metal precursor. The second precursor pulse comprises exposing the substrate to a second precursor. The second precursor comprises a heterocyclic organic compound.

公开(公告)号：US11735422B2

公开(公告)日：2023-08-22

申请号：US17065925

申请日：2020-10-08

Applicant: ASM IP Holding B.V.

Inventor： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/02172 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3105

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US11644758B2

公开(公告)日：2023-05-09

申请号：US17375235

申请日：2021-07-14

Applicant: ASM IP Holding B.V.

Inventor： Daniele Piumi ,  David Kurt de Roest

IPC: G03F7/20 ,  H01L23/00

CPC classification number: G03F7/70783 ,  G03F7/70033 ,  H01L23/562

Abstract: Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

公开(公告)号：US20210013037A1

公开(公告)日：2021-01-14

申请号：US16922520

申请日：2020-07-07

Applicant: ASM IP Holding B.V.

Inventor： Yiting Sun ,  David de Roest ,  Daniele Piumi ,  Ivo Johannes Raaijmakers ,  BokHeon Kim ,  Timothee Blanquart ,  Yoann Tomczak

IPC: H01L21/033 ,  H01L21/311 ,  G03F7/20 ,  G03F7/38

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.

公开(公告)号：US12255053B2

公开(公告)日：2025-03-18

申请号：US17544167

申请日：2021-12-07

Applicant: ASM IP Holding B.V.

Inventor： Daniele Piumi ,  Pamela Rene Fischer

IPC: C23C16/458 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32

Abstract: Plasma-assisted methods for depositing materials and related systems are described. The methods described herein comprise ending a deposition process when a plasma characteristic matches a pre-determined criterion.

公开(公告)号：US20250060671A1

公开(公告)日：2025-02-20

申请号：US18936501

申请日：2024-11-04

Applicant: ASM IP Holding B.V.

Inventor： Ivo Raaijmakers ,  Daniele Piumi ,  Ivan Zyulkov ,  David Kurt de Roest ,  Michael Eugene Givens

IPC: G03F7/16

Abstract: A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.

公开(公告)号：US20230077088A1

公开(公告)日：2023-03-09

申请号：US17900065

申请日：2022-08-31

Applicant: ASM IP Holding B.V.

Inventor： Arpita Saha ,  David de Roest ,  Michael Givens ,  Charles Dezelah ,  Monica Thukkaram ,  Daniele Piumi

IPC: G03F1/22

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the absorber layer underlying an extreme ultraviolet (EUV) photoresist are disclosed. Exemplary methods include forming the photoresist absorber layer or underlayer with an oxide of a high atomic number (z) element having an EUV cross section (σα) of greater than 2×106 cm2/mol and then forming the EUV photoresist over the high-z underlayer.

公开(公告)号：US20230059464A1

公开(公告)日：2023-02-23

申请号：US17818062

申请日：2022-08-08

Applicant: ASM IP Holding, B.V.

Inventor： Yoann Tomczak ,  Ivan Zyulkov ,  David Kurt de Roest ,  Michael Eugence Givens ,  Daniele Piumi ,  Charles Dezelah

IPC: H01L21/768 ,  H01L21/027 ,  G03F7/004 ,  G03F7/20

Abstract: Methods of forming patterned features on a surface of a substrate are disclosed. Exemplary methods include gas-phase formation of a layer comprising an oxalate compound on a surface of the substrate. Portions of the layer comprising the oxalate compound can be exposed to radiation or active species that form exposed and unexposed portions. Material can be selectively deposed onto the exposed or the unexposed portions.