公开(公告)号：US20250166971A1

公开(公告)日：2025-05-22

申请号：US18963894

申请日：2024-11-29

Applicant: ASM IP Holding B.V.

Inventor： Songwhe Herr ,  Jeongsu Lee ,  Dongok Shin ,  DaeYoun Kim

IPC: H01J37/32

Abstract: A substrate processing system using plasma would be presented. The system may comprise a plurality of reaction chambers disposed on a platform, each of them being configured to process substrates; a plasma generator or generator coupled to the plurality of reaction chambers individually and configured to generate plasma or plasma power with a certain frequency and a certain phase, and further configured to provide the generated plasma or plasma power to the plurality of reaction chambers; and a control circuit connected to the plasma generator or generator and configured to adjust the phase of the plasma or plasma power generated by the plasma generator or generator; wherein, the control circuit is further configured to shift the phase of the generated plasma or plasma power provided to the plurality of reaction chambers independently.

公开(公告)号：US20240392439A1

公开(公告)日：2024-11-28

申请号：US18668596

申请日：2024-05-20

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  DaeYoun Kim ,  Yonjong Jeon ,  Vivek Upadhaya

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46

Abstract: A reaction lid and a Plasma Enhanced Atomic Layer Deposition (PEALD) apparatus with Remote Plasma Unit (RPU) using the reaction lid is disclosed. The reaction lid may comprise a gas inlet configured to flow a generated plasma and a processing gas into a wafer processing space, a top portion disposed below the gas inlet and having a truncated circular cone shape, the top portion defining the wafer processing space for flowing the generated plasma and the processing gas, a sidewall portion disposed below the top portion and a baffle placed at the mouth of the top portion below the gas inlet and configured to disperse the generated plasma and the processing gas throughout a surface of the wafer evenly by preventing the generated plasma and the processing gas from concentrating in the center of the wafer, wherein the wafer processing space is also defined by the sidewall portion.

公开(公告)号：USD990441S1

公开(公告)日：2023-06-27

申请号：US29806823

申请日：2021-09-07

Applicant: ASM IP Holding B.V.

Designer： JeongHo Lee ,  JinHo Shin ,  DaeYoun Kim ,  Jaehyun Kim ,  TaeWoong Kim

Abstract: FIG. 1 is a top perspective view of the gas flow control plate, showing our new design;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is a top view thereof;
FIG. 4 is a bottom view thereof;
FIG. 5 is a front view thereof;
FIG. 6 is a back view thereof;
FIG. 7 is a right side view thereof; and,
FIG. 8 is a left side view thereof.

公开(公告)号：US11664199B2

公开(公告)日：2023-05-30

申请号：US16655217

申请日：2019-10-16

Applicant: ASM IP Holding B.V.

Inventor： JaeMin Roh ,  DaeYoun Kim ,  JulIl Lee ,  ChangMin Lee

IPC: C23C16/458 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687 ,  H01L21/67 ,  H01L21/68 ,  C23C16/505 ,  C23C16/455

CPC classification number: H01J37/32715 ,  C23C16/4585 ,  H01J37/32642 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/68 ,  H01L21/68764 ,  C23C16/45536 ,  C23C16/505 ,  H01J2237/20285 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A substrate processing method capable of improving thin film uniformity on a substrate by controlling the position of a substrate supporting apparatus includes: a first operation of moving the substrate supporting apparatus in a first direction by a first predetermined distance; a second operation of moving the substrate supporting apparatus in a second direction by a second predetermined distance; a third operation of moving the substrate supporting apparatus in the second direction by the first predetermined distance; and a fourth operation of moving the substrate supporting apparatus in the first direction by the second predetermined distance, wherein the second direction may be opposite to the first direction.

公开(公告)号：US20220293398A1

公开(公告)日：2022-09-15

申请号：US17689392

申请日：2022-03-08

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong ,  HyungChul Moon ,  GeunHwi Kim ,  JuIll Lee ,  DaeYoun Kim

IPC: H01J37/32 ,  H01L21/263

Abstract: A substrate processing apparatus includes one or more reactors, which physically prevent a process gas in a reaction space from penetrating into a space other than the reaction space. Furthermore, provided is a substrate processing apparatus capable of minimizing the occurrence of parasitic plasma in a space other than a reaction space.

公开(公告)号：US20210180188A1

公开(公告)日：2021-06-17

申请号：US17120063

申请日：2020-12-11

Applicant: ASM IP Holding B.V.

Inventor： DaeYoun Kim ,  JaeHyun Kim ,  SeungHwan Lee

IPC: C23C16/458 ,  C23C16/455

Abstract: A substrate processing apparatus capable of selective processing a thin film in a bevel edge includes: a substrate support plate including a recess and at least one path formed in the recess; and a gas supply unit on the substrate support plate, wherein a first distance between a portion of the substrate support plate inside the recess and the gas supply unit is less than a second distance between the gas supply unit and the other portion of the substrate support plate outside the recess.

公开(公告)号：US20210166910A1

公开(公告)日：2021-06-03

申请号：US17103904

申请日：2020-11-24

Applicant: ASM IP Holding B.V.

Inventor： DaeYoun Kim ,  JaeHyun Kim ,  SeungHwan Lee

IPC: H01J37/20 ,  H01J37/32 ,  H01L21/311

Abstract: A substrate processing apparatus capable of selective processing a thin film in a bevel region thereof includes a substrate support plate for supporting a substrate to be processed, the substrate support plate including: an inner portion having an upper surface having an area less than that of the substrate to be processed; and a peripheral portion surrounding the inner portion, wherein an upper surface of the peripheral portion is below the upper surface of the inner portion.