公开(公告)号：US20250043427A1

公开(公告)日：2025-02-06

申请号：US18785394

申请日：2024-07-26

Applicant: ASM IP Holding B.V.

Inventor： Songwhe Herr ,  Dongok Shin ,  KiChul Um

IPC: C23C16/505 ,  C23C16/455

Abstract: A wafer processing apparatus with improved film uniformity is presented. The apparatus comprising a radio frequency (RF) enclosure enclosing and defining a reaction chamber; a showerhead placed inside of the reaction chamber configured to generating plasma for processing a wafer in the reaction chamber; a radio frequency (RF) power supply configured to generate RF and supply the generated RF to the showerhead; a plurality of capacitors connected in parallel and/or in serial between the RF power supply and the showerhead; and more than one auxiliary ground lines configured to be placed above the showerhead. The auxiliary ground lines are to be turned on sequentially for improving map profile.

公开(公告)号：US20240404790A1

公开(公告)日：2024-12-05

申请号：US18674057

申请日：2024-05-24

Applicant: ASM IP Holding B.V.

Inventor： Jeongsu Lee ,  Dongok Shin ,  Songwhe Herr ,  DaeYoun Kim

IPC: H01J37/32

Abstract: A wafer processing system using plasma would be presented. The system may comprise a plurality of reaction chambers disposed on a platform, each of them being configured to process wafers; a plasma generator coupled to the plurality of reaction chambers individually and configured to generate plasma with a certain frequency and a certain phase, and further configured to provide the generated plasma to the plurality of reaction chambers; and a control circuit connected to the plasma generator and configured to adjust the phase of the plasma generated by the plasma generator; wherein, the control circuit is further configured to shift the phase of the generated plasma provided to the plurality of reaction chambers independently.

公开(公告)号：US20250166971A1

公开(公告)日：2025-05-22

申请号：US18963894

申请日：2024-11-29

Applicant: ASM IP Holding B.V.

Inventor： Songwhe Herr ,  Jeongsu Lee ,  Dongok Shin ,  DaeYoun Kim

IPC: H01J37/32

Abstract: A substrate processing system using plasma would be presented. The system may comprise a plurality of reaction chambers disposed on a platform, each of them being configured to process substrates; a plasma generator or generator coupled to the plurality of reaction chambers individually and configured to generate plasma or plasma power with a certain frequency and a certain phase, and further configured to provide the generated plasma or plasma power to the plurality of reaction chambers; and a control circuit connected to the plasma generator or generator and configured to adjust the phase of the plasma or plasma power generated by the plasma generator or generator; wherein, the control circuit is further configured to shift the phase of the generated plasma or plasma power provided to the plurality of reaction chambers independently.